AU2001255732A1 - Electrically-eraseable programmable read-only memory having reduced-page-size program and erase - Google Patents

Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Info

Publication number
AU2001255732A1
AU2001255732A1 AU2001255732A AU5573201A AU2001255732A1 AU 2001255732 A1 AU2001255732 A1 AU 2001255732A1 AU 2001255732 A AU2001255732 A AU 2001255732A AU 5573201 A AU5573201 A AU 5573201A AU 2001255732 A1 AU2001255732 A1 AU 2001255732A1
Authority
AU
Australia
Prior art keywords
control
page
pages
control circuits
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001255732A
Other languages
English (en)
Inventor
Philip C. Barnett
Trevor Blyth
David Sowards
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2001255732A1 publication Critical patent/AU2001255732A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AU2001255732A 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase Abandoned AU2001255732A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/564,324 US6400603B1 (en) 2000-05-03 2000-05-03 Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
US09564324 2000-05-03
PCT/US2001/013581 WO2001084556A1 (en) 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Publications (1)

Publication Number Publication Date
AU2001255732A1 true AU2001255732A1 (en) 2001-11-12

Family

ID=24254017

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001255732A Abandoned AU2001255732A1 (en) 2000-05-03 2001-04-26 Electrically-eraseable programmable read-only memory having reduced-page-size program and erase

Country Status (10)

Country Link
US (2) US6400603B1 (ko)
EP (1) EP1305805A1 (ko)
JP (1) JP4966472B2 (ko)
KR (1) KR100698340B1 (ko)
AU (1) AU2001255732A1 (ko)
BR (1) BR0110585A (ko)
CA (1) CA2407888A1 (ko)
IL (1) IL152577A0 (ko)
NZ (1) NZ522383A (ko)
WO (1) WO2001084556A1 (ko)

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US7236402B2 (en) * 2005-11-30 2007-06-26 Freescale Semiconductor, Inc. Method and apparatus for programming/erasing a non-volatile memory
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KR100851546B1 (ko) * 2006-09-22 2008-08-11 삼성전자주식회사 비휘발성 기억 장치 및 그 동작 방법
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US7787304B2 (en) * 2007-11-01 2010-08-31 Jonker Llc Method of making integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
US8580622B2 (en) 2007-11-14 2013-11-12 Invensas Corporation Method of making integrated circuit embedded with non-volatile programmable memory having variable coupling
US7787295B2 (en) * 2007-11-14 2010-08-31 Jonker Llc Integrated circuit embedded with non-volatile multiple-time programmable memory having variable coupling
US7876615B2 (en) * 2007-11-14 2011-01-25 Jonker Llc Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
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US8120990B2 (en) * 2008-02-04 2012-02-21 Mosaid Technologies Incorporated Flexible memory operations in NAND flash devices
US20090251972A1 (en) * 2008-04-03 2009-10-08 Yue-Song He Nonvolatile memory arrays with charge trapping dielectric and with non-dielectric nanodots
US8305805B2 (en) * 2008-11-03 2012-11-06 Invensas Corporation Common drain non-volatile multiple-time programmable memory
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Also Published As

Publication number Publication date
US20020114185A1 (en) 2002-08-22
EP1305805A1 (en) 2003-05-02
JP2003532968A (ja) 2003-11-05
IL152577A0 (en) 2003-05-29
KR20030014212A (ko) 2003-02-15
NZ522383A (en) 2004-03-26
US6400603B1 (en) 2002-06-04
WO2001084556A1 (en) 2001-11-08
BR0110585A (pt) 2004-04-06
CA2407888A1 (en) 2001-11-08
JP4966472B2 (ja) 2012-07-04
KR100698340B1 (ko) 2007-03-23
US6510081B2 (en) 2003-01-21

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