IL137513A - תהליך הפיכה לאפר של חומרים אורגנייםממצעים - Google Patents
תהליך הפיכה לאפר של חומרים אורגנייםממצעיםInfo
- Publication number
- IL137513A IL137513A IL13751399A IL13751399A IL137513A IL 137513 A IL137513 A IL 137513A IL 13751399 A IL13751399 A IL 13751399A IL 13751399 A IL13751399 A IL 13751399A IL 137513 A IL137513 A IL 137513A
- Authority
- IL
- Israel
- Prior art keywords
- ashing
- plasma
- photoresists
- sulfur trioxide
- group
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 62
- 238000004380 ashing Methods 0.000 title claims description 58
- 230000008569 process Effects 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 title claims description 28
- 239000007789 gas Substances 0.000 claims description 59
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 claims description 56
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000000376 reactant Substances 0.000 claims description 16
- 230000000153 supplemental effect Effects 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 11
- 239000011368 organic material Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 6
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- -1 aluminum-silicon-copper Chemical compound 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 239000003973 paint Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010408 film Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 12
- 230000004913 activation Effects 0.000 description 11
- 238000001994 activation Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008398 formation water Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1469598A | 1998-01-28 | 1998-01-28 | |
| PCT/US1999/001560 WO1999039382A1 (en) | 1998-01-28 | 1999-01-26 | Process for ashing organic materials from substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL137513A0 IL137513A0 (en) | 2001-07-24 |
| IL137513A true IL137513A (he) | 2004-05-12 |
Family
ID=21767120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL13751399A IL137513A (he) | 1998-01-28 | 1999-01-26 | תהליך הפיכה לאפר של חומרים אורגנייםממצעים |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1074043A4 (he) |
| JP (1) | JP3358808B2 (he) |
| KR (1) | KR100377711B1 (he) |
| CN (1) | CN1154159C (he) |
| CA (1) | CA2319018C (he) |
| IL (1) | IL137513A (he) |
| MY (1) | MY134851A (he) |
| TW (1) | TWI239994B (he) |
| WO (1) | WO1999039382A1 (he) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231775B1 (en) * | 1998-01-28 | 2001-05-15 | Anon, Inc. | Process for ashing organic materials from substrates |
| US20050136681A1 (en) * | 2003-12-23 | 2005-06-23 | Tokyo Electron Limited | Method and apparatus for removing photoresist from a substrate |
| KR100559947B1 (ko) * | 2004-08-18 | 2006-03-13 | 동부아남반도체 주식회사 | 반도체 소자용 금속 배선의 후처리 방법 |
| US7387968B2 (en) | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
| US7381651B2 (en) * | 2006-03-22 | 2008-06-03 | Axcelis Technologies, Inc. | Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process |
| US8043434B2 (en) * | 2008-10-23 | 2011-10-25 | Lam Research Corporation | Method and apparatus for removing photoresist |
| CN104599962A (zh) * | 2014-12-29 | 2015-05-06 | 上海华虹宏力半导体制造有限公司 | 厚铝刻蚀工艺中聚合物的去除方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59163826A (ja) * | 1983-03-08 | 1984-09-14 | Toshiba Corp | ドライエツチング方法 |
| EP0368732B1 (en) * | 1988-11-04 | 1995-06-28 | Fujitsu Limited | Process for forming resist mask pattern |
| JPH0475323A (ja) * | 1990-07-17 | 1992-03-10 | Seiko Epson Corp | レジスト除去法 |
| US5037506A (en) * | 1990-09-06 | 1991-08-06 | Subhash Gupta | Method of stripping layers of organic materials |
| FR2673763A1 (fr) * | 1991-03-06 | 1992-09-11 | Centre Nat Rech Scient | Procede de gravure anisotrope des polymeres par plasma. |
| JP3084910B2 (ja) * | 1992-03-18 | 2000-09-04 | ヤマハ株式会社 | 配線形成法 |
| JPH05304089A (ja) * | 1992-04-28 | 1993-11-16 | Dainippon Screen Mfg Co Ltd | 基板表面からのレジストの除去方法並びに装置 |
| JP2572924B2 (ja) * | 1992-09-04 | 1997-01-16 | 醇 西脇 | 大気圧プラズマによる金属の表面処理法 |
| US5550007A (en) * | 1993-05-28 | 1996-08-27 | Lucent Technologies Inc. | Surface-imaging technique for lithographic processes for device fabrication |
| JP3391410B2 (ja) * | 1993-09-17 | 2003-03-31 | 富士通株式会社 | レジストマスクの除去方法 |
| US5824604A (en) * | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
| US5763016A (en) * | 1996-12-19 | 1998-06-09 | Anon, Incorporated | Method of forming patterns in organic coatings films and layers |
-
1999
- 1999-01-26 KR KR10-2000-7008217A patent/KR100377711B1/ko not_active IP Right Cessation
- 1999-01-26 CA CA002319018A patent/CA2319018C/en not_active Expired - Fee Related
- 1999-01-26 MY MYPI99000277A patent/MY134851A/en unknown
- 1999-01-26 JP JP2000529750A patent/JP3358808B2/ja not_active Expired - Fee Related
- 1999-01-26 WO PCT/US1999/001560 patent/WO1999039382A1/en not_active Application Discontinuation
- 1999-01-26 CN CNB99802399XA patent/CN1154159C/zh not_active Expired - Fee Related
- 1999-01-26 EP EP99904261A patent/EP1074043A4/en not_active Ceased
- 1999-01-26 IL IL13751399A patent/IL137513A/he not_active IP Right Cessation
- 1999-03-23 TW TW088101212A patent/TWI239994B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL137513A0 (en) | 2001-07-24 |
| WO1999039382A1 (en) | 1999-08-05 |
| CN1289452A (zh) | 2001-03-28 |
| EP1074043A4 (en) | 2002-11-06 |
| JP2002502125A (ja) | 2002-01-22 |
| CA2319018C (en) | 2004-08-24 |
| EP1074043A1 (en) | 2001-02-07 |
| TWI239994B (en) | 2005-09-21 |
| CA2319018A1 (en) | 1999-08-05 |
| CN1154159C (zh) | 2004-06-16 |
| JP3358808B2 (ja) | 2002-12-24 |
| MY134851A (en) | 2007-12-31 |
| KR20010040431A (ko) | 2001-05-15 |
| KR100377711B1 (ko) | 2003-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |