IL126449A - A method for controlling the oxygen content of metal materials of valves - Google Patents
A method for controlling the oxygen content of metal materials of valvesInfo
- Publication number
- IL126449A IL126449A IL12644997A IL12644997A IL126449A IL 126449 A IL126449 A IL 126449A IL 12644997 A IL12644997 A IL 12644997A IL 12644997 A IL12644997 A IL 12644997A IL 126449 A IL126449 A IL 126449A
- Authority
- IL
- Israel
- Prior art keywords
- valve metal
- acid
- powder
- temperature
- leach solution
- Prior art date
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 239000001301 oxygen Substances 0.000 title claims abstract description 110
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000007769 metal material Substances 0.000 title claims abstract description 40
- 239000002253 acid Substances 0.000 claims abstract description 104
- 238000002386 leaching Methods 0.000 claims abstract description 35
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 118
- 239000000843 powder Substances 0.000 claims description 77
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 69
- 229910052715 tantalum Inorganic materials 0.000 claims description 60
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 53
- 230000008569 process Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 229910052758 niobium Inorganic materials 0.000 claims description 18
- 239000010955 niobium Substances 0.000 claims description 18
- 239000000356 contaminant Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 239000008188 pellet Substances 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 6
- 239000011707 mineral Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 238000007743 anodising Methods 0.000 claims 4
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 68
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 43
- 239000003990 capacitor Substances 0.000 description 24
- 239000008367 deionised water Substances 0.000 description 20
- 229910021641 deionized water Inorganic materials 0.000 description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 17
- 229910017604 nitric acid Inorganic materials 0.000 description 17
- 238000013019 agitation Methods 0.000 description 13
- 239000003153 chemical reaction reagent Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 239000013500 performance material Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- UZUODNWWWUQRIR-UHFFFAOYSA-L disodium;3-aminonaphthalene-1,5-disulfonate Chemical compound [Na+].[Na+].C1=CC=C(S([O-])(=O)=O)C2=CC(N)=CC(S([O-])(=O)=O)=C21 UZUODNWWWUQRIR-UHFFFAOYSA-L 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004845 hydriding Methods 0.000 description 2
- 238000009700 powder processing Methods 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/145—Chemical treatment, e.g. passivation or decarburisation
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/628,878 US5993513A (en) | 1996-04-05 | 1996-04-05 | Method for controlling the oxygen content in valve metal materials |
PCT/US1997/005265 WO1997038143A1 (en) | 1996-04-05 | 1997-03-31 | Method for lowering the oxygen content in valve metal materials |
Publications (2)
Publication Number | Publication Date |
---|---|
IL126449A0 IL126449A0 (en) | 1999-08-17 |
IL126449A true IL126449A (en) | 2001-07-24 |
Family
ID=24520688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL12644997A IL126449A (en) | 1996-04-05 | 1997-03-31 | A method for controlling the oxygen content of metal materials of valves |
Country Status (12)
Country | Link |
---|---|
US (2) | US5993513A (ja) |
JP (1) | JP3655317B2 (ja) |
CN (1) | CN1077143C (ja) |
AU (1) | AU2428997A (ja) |
BR (1) | BR9710425A (ja) |
CZ (1) | CZ320298A3 (ja) |
DE (2) | DE19781680B4 (ja) |
GB (1) | GB2326646B (ja) |
IL (1) | IL126449A (ja) |
RU (1) | RU2192491C2 (ja) |
TW (1) | TW502067B (ja) |
WO (1) | WO1997038143A1 (ja) |
Families Citing this family (64)
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US5993513A (en) * | 1996-04-05 | 1999-11-30 | Cabot Corporation | Method for controlling the oxygen content in valve metal materials |
CN105033283A (zh) * | 1998-05-06 | 2015-11-11 | H.C.施塔克公司 | 用气态镁还原有关氧化物制备的金属粉末 |
US6576038B1 (en) * | 1998-05-22 | 2003-06-10 | Cabot Corporation | Method to agglomerate metal particles and metal particles having improved properties |
US6391275B1 (en) | 1998-09-16 | 2002-05-21 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US6416730B1 (en) | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
US6462934B2 (en) | 1998-09-16 | 2002-10-08 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
US6515846B1 (en) * | 1999-02-08 | 2003-02-04 | H.C. Starck, Inc. | Capacitor substrates made of refractory metal nitrides |
JP2004500480A (ja) * | 1999-03-19 | 2004-01-08 | キャボット コーポレイション | 粉砕によるニオビウムおよびその他の金属粉末の製造 |
JP3585791B2 (ja) * | 1999-11-04 | 2004-11-04 | Necトーキン株式会社 | 固体電解コンデンサ用陽極体の製造方法及びその製造方法に用いられる連続焼結装置 |
DE19953946A1 (de) * | 1999-11-09 | 2001-05-10 | Starck H C Gmbh Co Kg | Kondensatorpulver |
US6576099B2 (en) | 2000-03-23 | 2003-06-10 | Cabot Corporation | Oxygen reduced niobium oxides |
WO2002002245A2 (en) * | 2000-06-29 | 2002-01-10 | Johnson & Johnson Consumer Companies, Inc. | Electrostatic impregnation of powders on substrates |
JP2002060803A (ja) * | 2000-08-10 | 2002-02-28 | Showa Kyabotto Super Metal Kk | 電解コンデンサ用タンタル焼結体の製造方法 |
JP2002093666A (ja) * | 2000-09-20 | 2002-03-29 | Showa Denko Kk | ニオブ粉、それを用いた焼結体及びそれを用いたコンデンサ |
IL155746A0 (en) * | 2000-11-06 | 2003-12-23 | Cabot Corp | Modified oxygen reduced valve metal oxides |
JP4521849B2 (ja) * | 2000-12-01 | 2010-08-11 | 昭和電工株式会社 | コンデンサ用ニオブ粉と該ニオブ粉を用いた焼結体および該焼結体を用いたコンデンサ |
US6537396B1 (en) | 2001-02-20 | 2003-03-25 | Ace Manufacturing & Parts Company | Cryogenic processing of springs and high cycle rate items |
US7149074B2 (en) * | 2001-04-19 | 2006-12-12 | Cabot Corporation | Methods of making a niobium metal oxide |
AU2002356516A1 (en) * | 2001-09-12 | 2003-03-24 | F.W. Gartner Thermal Spraying Company | Nanostructured titania coated titanium |
US20040055420A1 (en) * | 2002-05-30 | 2004-03-25 | Arkady Garbar | Method for enhancing surface area of bulk metals |
US20040078308A1 (en) * | 2002-10-21 | 2004-04-22 | Michaluk Christopher A. | Method of supplying metal material for manufacture of sputtering targets and other articles |
US20040186810A1 (en) * | 2003-02-14 | 2004-09-23 | Michaluk Christopher A. | Method of supplying sputtering targets to fabricators and other users |
US7655214B2 (en) | 2003-02-26 | 2010-02-02 | Cabot Corporation | Phase formation of oxygen reduced valve metal oxides and granulation methods |
US7157073B2 (en) * | 2003-05-02 | 2007-01-02 | Reading Alloys, Inc. | Production of high-purity niobium monoxide and capacitor production therefrom |
US7445679B2 (en) * | 2003-05-16 | 2008-11-04 | Cabot Corporation | Controlled oxygen addition for metal material |
EP2455340A1 (en) | 2003-05-19 | 2012-05-23 | Cabot Corporation | Valve metal sub-oxide powders and capacitors and sintered anode bodies made therefrom |
US7228722B2 (en) * | 2003-06-09 | 2007-06-12 | Cabot Corporation | Method of forming sputtering articles by multidirectional deformation |
ATE554490T1 (de) * | 2003-11-10 | 2012-05-15 | Showa Denko Kk | Niobpulver für einen kondensator, niob- gesinterter körper und kondensator |
US20050234545A1 (en) * | 2004-04-19 | 2005-10-20 | Yea-Yang Su | Amorphous oxide surface film for metallic implantable devices and method for production thereof |
WO2006012279A2 (en) * | 2004-06-28 | 2006-02-02 | Cabot Corporation | High capacitance tantalum flakes and methods of producing the same |
US20080011124A1 (en) * | 2004-09-08 | 2008-01-17 | H.C. Starck Gmbh & Co. Kg | Deoxidation of Valve Metal Powders |
MX2007013600A (es) | 2005-05-05 | 2008-01-24 | Starck H C Gmbh | Metodo para revestir una superficie de bustrato y producto revestido. |
AU2006243448B2 (en) * | 2005-05-05 | 2011-09-01 | H.C. Starck Inc. | Coating process for manufacture or reprocessing of sputter targets and X-ray anodes |
US7099143B1 (en) | 2005-05-24 | 2006-08-29 | Avx Corporation | Wet electrolytic capacitors |
EP1915764A1 (en) | 2005-08-19 | 2008-04-30 | Avx Limited | Polymer based solid state capacitors and a method of manufacturing them |
GB0517952D0 (en) * | 2005-09-02 | 2005-10-12 | Avx Ltd | Method of forming anode bodies for solid state capacitors |
AT506547B1 (de) | 2006-03-07 | 2013-02-15 | Cabot Corp | Verfahren zur erzeugung verformter metallgegenstände |
US7480130B2 (en) | 2006-03-09 | 2009-01-20 | Avx Corporation | Wet electrolytic capacitor |
US7511943B2 (en) | 2006-03-09 | 2009-03-31 | Avx Corporation | Wet electrolytic capacitor containing a cathode coating |
US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
CN101808770A (zh) * | 2007-10-15 | 2010-08-18 | 高温特殊金属公司 | 利用回收的废料作为源材料制备钽粉末的方法 |
US7760487B2 (en) * | 2007-10-22 | 2010-07-20 | Avx Corporation | Doped ceramic powder for use in forming capacitor anodes |
US7768773B2 (en) * | 2008-01-22 | 2010-08-03 | Avx Corporation | Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor |
US7760488B2 (en) * | 2008-01-22 | 2010-07-20 | Avx Corporation | Sintered anode pellet treated with a surfactant for use in an electrolytic capacitor |
US7852615B2 (en) * | 2008-01-22 | 2010-12-14 | Avx Corporation | Electrolytic capacitor anode treated with an organometallic compound |
US20090279233A1 (en) * | 2008-05-12 | 2009-11-12 | Yuri Freeman | High volumetric efficiency anodes for electrolytic capacitors |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US8043655B2 (en) * | 2008-10-06 | 2011-10-25 | H.C. Starck, Inc. | Low-energy method of manufacturing bulk metallic structures with submicron grain sizes |
US8203827B2 (en) * | 2009-02-20 | 2012-06-19 | Avx Corporation | Anode for a solid electrolytic capacitor containing a non-metallic surface treatment |
US8310815B2 (en) * | 2009-04-20 | 2012-11-13 | Kemet Electronics Corporation | High voltage and high efficiency polymer electrolytic capacitors |
US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
WO2013080617A1 (ja) * | 2011-11-29 | 2013-06-06 | 昭和電工株式会社 | タングステン細粉の製造方法 |
US20180144874A1 (en) | 2016-10-21 | 2018-05-24 | Global Advanced Metals, Usa, Inc. | Tantalum Powder, Anode, And Capacitor Including Same, And Manufacturing Methods Thereof |
CN106834671B (zh) * | 2017-03-30 | 2018-08-28 | 贵州大学 | 一种强力搅拌充气式浸出槽 |
US11077497B2 (en) | 2017-06-07 | 2021-08-03 | Global Titanium Inc. | Deoxidation of metal powders |
KR102389784B1 (ko) | 2018-03-05 | 2022-04-22 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 구형 분말을 함유하는 애노드 및 커패시터 |
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KR102503996B1 (ko) | 2018-03-05 | 2023-03-02 | 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. | 구형 탄탈럼 분말, 그를 함유하는 생성물, 및 그의 제조 방법 |
CA3120873A1 (en) | 2018-12-12 | 2020-06-18 | Craig M. Sungail | Spherical niobium alloy powder, products containing the same, and methods of making the same |
RU2708899C1 (ru) * | 2019-05-10 | 2019-12-12 | федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" | Способ определения ёмкости хранения кислорода в оксидных материалах |
TW202106893A (zh) | 2019-07-19 | 2021-02-16 | 美商環球高級金屬美國公司 | 球形鉭-鈦合金粉末,包含彼之產品及製備彼之方法 |
CN114068190A (zh) * | 2021-11-16 | 2022-02-18 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | 一种提高钽电容器绝缘强度的方法 |
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US3190822A (en) * | 1961-01-09 | 1965-06-22 | Burnham John | Process for electrolytically etching valve metal surfaces |
DE1953601B2 (de) * | 1969-10-24 | 1972-12-07 | Knapp Mikrohydrauhk GmbH, 8402 Neu traubling | Ventil fuer anlagen der hochdruck-oelhydraulik |
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DE3130392C2 (de) * | 1981-07-31 | 1985-10-17 | Hermann C. Starck Berlin, 1000 Berlin | Verfahren zur Herstellung reiner agglomerierter Ventilmetallpulver für Elektrolytkondensatoren, deren Verwendung und Verfahren zur Herstellung von Sinteranoden |
DE3140248C2 (de) * | 1981-10-09 | 1986-06-19 | Hermann C. Starck Berlin, 1000 Berlin | Verwendung von dotiertem Ventilmetallpulver für die Herstellung von Elektrolytkondensatoranoden |
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-
1996
- 1996-04-05 US US08/628,878 patent/US5993513A/en not_active Expired - Lifetime
-
1997
- 1997-03-31 GB GB9821831A patent/GB2326646B/en not_active Expired - Fee Related
- 1997-03-31 BR BR9710425A patent/BR9710425A/pt not_active IP Right Cessation
- 1997-03-31 WO PCT/US1997/005265 patent/WO1997038143A1/en not_active Application Discontinuation
- 1997-03-31 CN CN97195237A patent/CN1077143C/zh not_active Expired - Fee Related
- 1997-03-31 JP JP53626697A patent/JP3655317B2/ja not_active Expired - Fee Related
- 1997-03-31 DE DE19781680A patent/DE19781680B4/de not_active Expired - Lifetime
- 1997-03-31 RU RU98119958/02A patent/RU2192491C2/ru not_active IP Right Cessation
- 1997-03-31 IL IL12644997A patent/IL126449A/en not_active IP Right Cessation
- 1997-03-31 CZ CZ983202A patent/CZ320298A3/cs unknown
- 1997-03-31 AU AU24289/97A patent/AU2428997A/en not_active Abandoned
- 1997-03-31 DE DE19781680T patent/DE19781680T1/de not_active Withdrawn
- 1997-04-01 TW TW086104154A patent/TW502067B/zh not_active IP Right Cessation
-
1999
- 1999-07-02 US US09/347,160 patent/US6312642B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2000508378A (ja) | 2000-07-04 |
GB9821831D0 (en) | 1998-12-02 |
DE19781680B4 (de) | 2008-02-21 |
BR9710425A (pt) | 1999-08-17 |
CN1221458A (zh) | 1999-06-30 |
AU2428997A (en) | 1997-10-29 |
GB2326646A (en) | 1998-12-30 |
RU2192491C2 (ru) | 2002-11-10 |
JP3655317B2 (ja) | 2005-06-02 |
DE19781680T1 (de) | 1999-04-15 |
GB2326646B (en) | 2000-07-19 |
TW502067B (en) | 2002-09-11 |
IL126449A0 (en) | 1999-08-17 |
CZ320298A3 (cs) | 1999-12-15 |
WO1997038143A1 (en) | 1997-10-16 |
US5993513A (en) | 1999-11-30 |
CN1077143C (zh) | 2002-01-02 |
US6312642B1 (en) | 2001-11-06 |
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