IL107475A - Plasma Ion Device and Method for High Impedance - Google Patents
Plasma Ion Device and Method for High ImpedanceInfo
- Publication number
- IL107475A IL107475A IL107475A IL10747593A IL107475A IL 107475 A IL107475 A IL 107475A IL 107475 A IL107475 A IL 107475A IL 10747593 A IL10747593 A IL 10747593A IL 107475 A IL107475 A IL 107475A
- Authority
- IL
- Israel
- Prior art keywords
- plasma
- target
- chamber
- support structure
- voltage
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 51
- 238000005468 ion implantation Methods 0.000 title claims description 38
- 150000002500 ions Chemical class 0.000 claims description 61
- 238000002513 implantation Methods 0.000 claims description 34
- 230000003993 interaction Effects 0.000 claims description 10
- 239000007943 implant Substances 0.000 claims description 8
- 230000002459 sustained effect Effects 0.000 claims description 7
- 230000000977 initiatory effect Effects 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims 3
- 210000002381 plasma Anatomy 0.000 description 128
- 239000007789 gas Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- -1 nitrogen ions Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 102100022704 Amyloid-beta precursor protein Human genes 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 101000823051 Homo sapiens Amyloid-beta precursor protein Proteins 0.000 description 1
- 241000531897 Loma Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- DZHSAHHDTRWUTF-SIQRNXPUSA-N amyloid-beta polypeptide 42 Chemical compound C([C@@H](C(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@H](C(=O)NCC(=O)N[C@@H](CO)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CCCCN)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@H](C(=O)N[C@@H]([C@@H](C)CC)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)NCC(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](C)C(O)=O)[C@@H](C)CC)C(C)C)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@@H](NC(=O)[C@H](CC(C)C)NC(=O)[C@H](CCCCN)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@@H](NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](CC=1C=CC(O)=CC=1)NC(=O)CNC(=O)[C@H](CO)NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](CC=1N=CNC=1)NC(=O)[C@H](CCCNC(N)=N)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CCC(O)=O)NC(=O)[C@H](C)NC(=O)[C@@H](N)CC(O)=O)C(C)C)C(C)C)C1=CC=CC=C1 DZHSAHHDTRWUTF-SIQRNXPUSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/971,433 US5330800A (en) | 1992-11-04 | 1992-11-04 | High impedance plasma ion implantation method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL107475A0 IL107475A0 (en) | 1994-02-27 |
| IL107475A true IL107475A (en) | 1998-03-10 |
Family
ID=25518384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL107475A IL107475A (en) | 1992-11-04 | 1993-11-02 | Plasma Ion Device and Method for High Impedance |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5330800A (de) |
| EP (1) | EP0596496B1 (de) |
| JP (1) | JPH06256943A (de) |
| KR (1) | KR960014437B1 (de) |
| CA (1) | CA2102384C (de) |
| DE (1) | DE69324326T2 (de) |
| IL (1) | IL107475A (de) |
Families Citing this family (79)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
| US5330800A (en) * | 1992-11-04 | 1994-07-19 | Hughes Aircraft Company | High impedance plasma ion implantation method and apparatus |
| US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
| US5498290A (en) * | 1993-08-27 | 1996-03-12 | Hughes Aircraft Company | Confinement of secondary electrons in plasma ion processing |
| US5558718A (en) * | 1994-04-08 | 1996-09-24 | The Regents, University Of California | Pulsed source ion implantation apparatus and method |
| JP3060876B2 (ja) * | 1995-02-15 | 2000-07-10 | 日新電機株式会社 | 金属イオン注入装置 |
| US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
| US5672541A (en) * | 1995-06-14 | 1997-09-30 | Wisconsin Alumni Research Foundation | Ultra-shallow junction semiconductor device fabrication |
| US5693376A (en) * | 1995-06-23 | 1997-12-02 | Wisconsin Alumni Research Foundation | Method for plasma source ion implantation and deposition for cylindrical surfaces |
| DE19538903A1 (de) * | 1995-10-19 | 1997-04-24 | Rossendorf Forschzent | Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens |
| US6784080B2 (en) | 1995-10-23 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device by sputter doping |
| JP3862305B2 (ja) * | 1995-10-23 | 2006-12-27 | 松下電器産業株式会社 | 不純物の導入方法及びその装置、並びに半導体装置の製造方法 |
| CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
| US6137231A (en) * | 1996-09-10 | 2000-10-24 | The Regents Of The University Of California | Constricted glow discharge plasma source |
| US5654043A (en) * | 1996-10-10 | 1997-08-05 | Eaton Corporation | Pulsed plate plasma implantation system and method |
| DE19702294A1 (de) * | 1997-01-23 | 1998-07-30 | Rossendorf Forschzent | Modulator für die Plasmaimmersions-Ionenimplantation |
| WO1999020086A2 (en) * | 1997-09-24 | 1999-04-22 | The Regents Of The University Of California | Process for forming adherent coatings using plasma processing |
| KR100521120B1 (ko) * | 1998-02-13 | 2005-10-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체소자의 표면처리방법 및 장치 |
| US6143631A (en) | 1998-05-04 | 2000-11-07 | Micron Technology, Inc. | Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon |
| US6368676B1 (en) * | 1999-07-20 | 2002-04-09 | Diversified Technologies, Inc. | Method of coating an article |
| US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
| US6458430B1 (en) | 1999-12-22 | 2002-10-01 | Axcelis Technologies, Inc. | Pretreatment process for plasma immersion ion implantation |
| CN1158403C (zh) * | 1999-12-23 | 2004-07-21 | 西南交通大学 | 一种人工器官表面改性方法 |
| US6403029B1 (en) * | 2000-01-12 | 2002-06-11 | The Trustees Of Princeton University | System and method of applying energetic ions for sterilization |
| US7747002B1 (en) * | 2000-03-15 | 2010-06-29 | Broadcom Corporation | Method and system for stereo echo cancellation for VoIP communication systems |
| US6459066B1 (en) | 2000-08-25 | 2002-10-01 | Board Of Regents, The University Of Texas System | Transmission line based inductively coupled plasma source with stable impedance |
| US6875700B2 (en) * | 2000-08-29 | 2005-04-05 | Board Of Regents, The University Of Texas System | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
| US6531367B2 (en) * | 2001-03-20 | 2003-03-11 | Macronix International Co., Ltd. | Method for forming ultra-shallow junction by boron plasma doping |
| KR100425453B1 (ko) * | 2001-07-06 | 2004-03-30 | 삼성전자주식회사 | 고밀도 플라즈마용 자석과 그 제조방법 및 이를 이용한고밀도 플라즈마용 반도체 제조장치 |
| US7163901B2 (en) | 2002-03-13 | 2007-01-16 | Varian Semiconductor Equipment Associates, Inc. | Methods for forming thin film layers by simultaneous doping and sintering |
| US6878415B2 (en) * | 2002-04-15 | 2005-04-12 | Varian Semiconductor Equipment Associates, Inc. | Methods for chemical formation of thin film layers using short-time thermal processes |
| EP1361437A1 (de) * | 2002-05-07 | 2003-11-12 | Centre National De La Recherche Scientifique (Cnrs) | Ein neuer biologischer Tumormarker und Methoden für die Detektion des krebsartigen oder nicht krebsartigen Phenotyps von Zellen |
| US20060233682A1 (en) * | 2002-05-08 | 2006-10-19 | Cherian Kuruvilla A | Plasma-assisted engine exhaust treatment |
| US20060062930A1 (en) * | 2002-05-08 | 2006-03-23 | Devendra Kumar | Plasma-assisted carburizing |
| US7638727B2 (en) * | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
| US7504061B2 (en) * | 2002-05-08 | 2009-03-17 | Leonhard Kurz Gmbh & Co., Kg | Method of decorating large plastic 3D objects |
| JP2005524963A (ja) * | 2002-05-08 | 2005-08-18 | ダナ・コーポレーション | プラズマ触媒 |
| US7560657B2 (en) * | 2002-05-08 | 2009-07-14 | Btu International Inc. | Plasma-assisted processing in a manufacturing line |
| US7465362B2 (en) * | 2002-05-08 | 2008-12-16 | Btu International, Inc. | Plasma-assisted nitrogen surface-treatment |
| US7497922B2 (en) * | 2002-05-08 | 2009-03-03 | Btu International, Inc. | Plasma-assisted gas production |
| US20050233091A1 (en) * | 2002-05-08 | 2005-10-20 | Devendra Kumar | Plasma-assisted coating |
| US7432470B2 (en) | 2002-05-08 | 2008-10-07 | Btu International, Inc. | Surface cleaning and sterilization |
| US20060228497A1 (en) * | 2002-05-08 | 2006-10-12 | Satyendra Kumar | Plasma-assisted coating |
| US7445817B2 (en) * | 2002-05-08 | 2008-11-04 | Btu International Inc. | Plasma-assisted formation of carbon structures |
| US7494904B2 (en) * | 2002-05-08 | 2009-02-24 | Btu International, Inc. | Plasma-assisted doping |
| US7498066B2 (en) * | 2002-05-08 | 2009-03-03 | Btu International Inc. | Plasma-assisted enhanced coating |
| US20060237398A1 (en) * | 2002-05-08 | 2006-10-26 | Dougherty Mike L Sr | Plasma-assisted processing in a manufacturing line |
| US20060057016A1 (en) * | 2002-05-08 | 2006-03-16 | Devendra Kumar | Plasma-assisted sintering |
| US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
| US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
| US7189940B2 (en) | 2002-12-04 | 2007-03-13 | Btu International Inc. | Plasma-assisted melting |
| BR0205419B1 (pt) * | 2002-12-20 | 2017-10-24 | Coppe/Ufrj Coordenacao Dos Programas De Pos Graduacao De Engenharia Da Univ Federal Do Rio De Janeir | Process of ionic nitretation by pulsed plasma for obtaining diffusion barrier for hydrogen for steel api 5l x-65 |
| USH2212H1 (en) * | 2003-09-26 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for producing an ion-ion plasma continuous in time |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| US9123508B2 (en) | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| FR2871934B1 (fr) * | 2004-06-16 | 2006-09-22 | Ion Beam Services Sa | Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge |
| US7741621B2 (en) * | 2004-07-14 | 2010-06-22 | City University Of Hong Kong | Apparatus and method for focused electric field enhanced plasma-based ion implantation |
| EP2477207A3 (de) * | 2004-09-24 | 2014-09-03 | Zond, Inc. | Vorrichtung zum Erzeugen von elektrischen Hochstrom-entladungen |
| WO2006127037A2 (en) * | 2004-11-05 | 2006-11-30 | Dana Corporation | Atmospheric pressure processing using microwave-generated plasmas |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| CN101160643B (zh) * | 2005-05-12 | 2012-04-18 | 松下电器产业株式会社 | 等离子体掺入方法和等离子体掺入设备 |
| US20070170867A1 (en) * | 2006-01-24 | 2007-07-26 | Varian Semiconductor Equipment Associates, Inc. | Plasma Immersion Ion Source With Low Effective Antenna Voltage |
| US20080132046A1 (en) * | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
| US7820533B2 (en) * | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
| US20090071371A1 (en) * | 2007-09-18 | 2009-03-19 | College Of William And Mary | Silicon Oxynitride Coating Compositions |
| US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
| WO2009146432A1 (en) * | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
| JP2013529352A (ja) | 2010-03-31 | 2013-07-18 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
| EP2552340A4 (de) | 2010-03-31 | 2015-10-14 | Univ Colorado State Res Found | Plasmavorrichtung mit flüssig-gas-schnittstelle |
| KR101147349B1 (ko) * | 2010-09-17 | 2012-05-23 | 인제대학교 산학협력단 | 누설 전류형 변압기를 이용한 플라즈마 처리장치 |
| CN104094377B (zh) * | 2011-12-19 | 2016-05-11 | 弗劳恩霍弗实用研究促进协会 | 用于产生空心阴极电弧放电等离子体的装置 |
| US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
| US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
| US10784079B2 (en) | 2018-09-26 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implantation system and source bushing thereof |
| US20210391161A1 (en) * | 2019-01-15 | 2021-12-16 | Fluidigm Canada Inc. | Direct ionization in imaging mass spectrometry operation |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3479269A (en) * | 1967-01-04 | 1969-11-18 | Bell Telephone Labor Inc | Method for sputter etching using a high frequency negative pulse train |
| US3732158A (en) * | 1971-01-14 | 1973-05-08 | Nasa | Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias |
| JPS5360560A (en) * | 1976-11-12 | 1978-05-31 | Hitachi Ltd | Injection method of ion to treated substance surface |
| US4247804A (en) * | 1979-06-04 | 1981-01-27 | Hughes Aircraft Company | Cold cathode discharge device with grid control |
| JPS58157081A (ja) * | 1982-03-12 | 1983-09-19 | 松下電器産業株式会社 | 高周波加熱装置 |
| US4596945A (en) * | 1984-05-14 | 1986-06-24 | Hughes Aircraft Company | Modulator switch with low voltage control |
| US4810322A (en) * | 1986-11-03 | 1989-03-07 | International Business Machines Corporation | Anode plate for a parallel-plate reactive ion etching reactor |
| DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
| US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
| KR930003857B1 (ko) * | 1987-08-05 | 1993-05-14 | 마쯔시다덴기산교 가부시기가이샤 | 플라즈마 도우핑방법 |
| US4912367A (en) * | 1988-04-14 | 1990-03-27 | Hughes Aircraft Company | Plasma-assisted high-power microwave generator |
| US5019752A (en) * | 1988-06-16 | 1991-05-28 | Hughes Aircraft Company | Plasma switch with chrome, perturbated cold cathode |
| JPH0211762A (ja) * | 1988-06-28 | 1990-01-16 | Masanobu Nunogaki | 表面加工容器中高エネルギーイオン注入法 |
| JP2775274B2 (ja) * | 1989-01-23 | 1998-07-16 | 實 菅原 | プラズマ発生装置 |
| JPH02230734A (ja) * | 1989-03-03 | 1990-09-13 | Nec Corp | 薄膜形成装置 |
| US5198072A (en) * | 1990-07-06 | 1993-03-30 | Vlsi Technology, Inc. | Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system |
| US5126163A (en) * | 1990-09-05 | 1992-06-30 | Northeastern University | Method for metal ion implantation using multiple pulsed arcs |
| US5218179A (en) * | 1990-10-10 | 1993-06-08 | Hughes Aircraft Company | Plasma source arrangement for ion implantation |
| CA2052080C (en) * | 1990-10-10 | 1997-01-14 | Jesse N. Matossian | Plasma source arrangement for ion implantation |
| US5212425A (en) * | 1990-10-10 | 1993-05-18 | Hughes Aircraft Company | Ion implantation and surface processing method and apparatus |
| US5330800A (en) * | 1992-11-04 | 1994-07-19 | Hughes Aircraft Company | High impedance plasma ion implantation method and apparatus |
| US5354381A (en) * | 1993-05-07 | 1994-10-11 | Varian Associates, Inc. | Plasma immersion ion implantation (PI3) apparatus |
-
1992
- 1992-11-04 US US07/971,433 patent/US5330800A/en not_active Expired - Lifetime
-
1993
- 1993-11-02 IL IL107475A patent/IL107475A/en not_active IP Right Cessation
- 1993-11-03 CA CA002102384A patent/CA2102384C/en not_active Expired - Lifetime
- 1993-11-04 KR KR1019930023273A patent/KR960014437B1/ko not_active Expired - Fee Related
- 1993-11-04 DE DE69324326T patent/DE69324326T2/de not_active Expired - Lifetime
- 1993-11-04 EP EP93117908A patent/EP0596496B1/de not_active Expired - Lifetime
- 1993-11-04 JP JP5275832A patent/JPH06256943A/ja active Pending
-
1996
- 1996-04-22 US US08/635,527 patent/US5607509A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06256943A (ja) | 1994-09-13 |
| KR940013298A (ko) | 1994-06-25 |
| EP0596496B1 (de) | 1999-04-07 |
| US5330800A (en) | 1994-07-19 |
| DE69324326T2 (de) | 1999-12-16 |
| KR960014437B1 (ko) | 1996-10-15 |
| EP0596496A1 (de) | 1994-05-11 |
| CA2102384C (en) | 2000-01-11 |
| IL107475A0 (en) | 1994-02-27 |
| DE69324326D1 (de) | 1999-05-12 |
| CA2102384A1 (en) | 1994-05-05 |
| US5607509A (en) | 1997-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| RH | Patent void |