IE54310B1 - Multilayer electrode of a semiconductor device - Google Patents
Multilayer electrode of a semiconductor deviceInfo
- Publication number
- IE54310B1 IE54310B1 IE2988/82A IE298882A IE54310B1 IE 54310 B1 IE54310 B1 IE 54310B1 IE 2988/82 A IE2988/82 A IE 2988/82A IE 298882 A IE298882 A IE 298882A IE 54310 B1 IE54310 B1 IE 54310B1
- Authority
- IE
- Ireland
- Prior art keywords
- layer
- silicon
- multilayer electrode
- aluminium
- multilayer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56204070A JPS58103168A (ja) | 1981-12-16 | 1981-12-16 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE822988L IE822988L (en) | 1983-06-16 |
| IE54310B1 true IE54310B1 (en) | 1989-08-16 |
Family
ID=16484261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE2988/82A IE54310B1 (en) | 1981-12-16 | 1982-12-16 | Multilayer electrode of a semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0082012B1 (OSRAM) |
| JP (1) | JPS58103168A (OSRAM) |
| DE (1) | DE3278146D1 (OSRAM) |
| IE (1) | IE54310B1 (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2164491B (en) * | 1984-09-14 | 1988-04-07 | Stc Plc | Semiconductor devices |
| JPH0611076B2 (ja) * | 1985-10-08 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
| EP0249256B1 (en) * | 1986-04-14 | 1992-01-22 | Koninklijke Philips Electronics N.V. | A semiconductor device with an aluminium interconnect layer containing a small percentage of vanadium |
| US4796081A (en) * | 1986-05-02 | 1989-01-03 | Advanced Micro Devices, Inc. | Low resistance metal contact for silicon devices |
| JPS63148646A (ja) * | 1986-12-12 | 1988-06-21 | Toshiba Corp | 半導体装置 |
| US4987562A (en) * | 1987-08-28 | 1991-01-22 | Fujitsu Limited | Semiconductor layer structure having an aluminum-silicon alloy layer |
| GB2214709A (en) * | 1988-01-20 | 1989-09-06 | Philips Nv | A method of enabling connection to a substructure forming part of an electronic device |
| SG118117A1 (en) | 2001-02-28 | 2006-01-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| SG116443A1 (en) | 2001-03-27 | 2005-11-28 | Semiconductor Energy Lab | Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same. |
| JP4926329B2 (ja) | 2001-03-27 | 2012-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、電気器具 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
| US3939047A (en) * | 1971-11-15 | 1976-02-17 | Nippon Electric Co., Ltd. | Method for fabricating electrode structure for a semiconductor device having a shallow junction |
| US3881971A (en) * | 1972-11-29 | 1975-05-06 | Ibm | Method for fabricating aluminum interconnection metallurgy system for silicon devices |
| US3918149A (en) * | 1974-06-28 | 1975-11-11 | Intel Corp | Al/Si metallization process |
| JPS5444866A (en) * | 1977-09-16 | 1979-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1981
- 1981-12-16 JP JP56204070A patent/JPS58103168A/ja active Granted
-
1982
- 1982-12-14 EP EP82306670A patent/EP0082012B1/en not_active Expired
- 1982-12-14 DE DE8282306670T patent/DE3278146D1/de not_active Expired
- 1982-12-16 IE IE2988/82A patent/IE54310B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IE822988L (en) | 1983-06-16 |
| EP0082012B1 (en) | 1988-02-24 |
| JPS58103168A (ja) | 1983-06-20 |
| JPS6364057B2 (OSRAM) | 1988-12-09 |
| DE3278146D1 (en) | 1988-03-31 |
| EP0082012A3 (en) | 1985-06-05 |
| EP0082012A2 (en) | 1983-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Patent lapsed |