IE50949B1 - A semiconductor device and a method of manufacturing a semiconductor device - Google Patents

A semiconductor device and a method of manufacturing a semiconductor device

Info

Publication number
IE50949B1
IE50949B1 IE2706/80A IE270680A IE50949B1 IE 50949 B1 IE50949 B1 IE 50949B1 IE 2706/80 A IE2706/80 A IE 2706/80A IE 270680 A IE270680 A IE 270680A IE 50949 B1 IE50949 B1 IE 50949B1
Authority
IE
Ireland
Prior art keywords
semiconductor layer
polycrystal semiconductor
layer
level
substrate
Prior art date
Application number
IE2706/80A
Other languages
English (en)
Other versions
IE802706L (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of IE802706L publication Critical patent/IE802706L/xx
Publication of IE50949B1 publication Critical patent/IE50949B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10P32/1414—
    • H10P32/171—
    • H10P32/302—
    • H10W20/01—
    • H10W20/40—
    • H10W20/4451—
    • H10W44/401—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
IE2706/80A 1979-12-30 1980-12-22 A semiconductor device and a method of manufacturing a semiconductor device IE50949B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17320179A JPS5696850A (en) 1979-12-30 1979-12-30 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
IE802706L IE802706L (en) 1981-06-30
IE50949B1 true IE50949B1 (en) 1986-08-20

Family

ID=15955974

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2706/80A IE50949B1 (en) 1979-12-30 1980-12-22 A semiconductor device and a method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (1) US4399451A (enExample)
EP (1) EP0032025B1 (enExample)
JP (1) JPS5696850A (enExample)
CA (1) CA1150416A (enExample)
DE (1) DE3068271D1 (enExample)
IE (1) IE50949B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141014A1 (de) * 1981-10-15 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung
JPS5893347A (ja) * 1981-11-30 1983-06-03 Toshiba Corp Ｍｏｓ型半導体装置及びその製造方法
US4554644A (en) * 1982-06-21 1985-11-19 Fairchild Camera & Instrument Corporation Static RAM cell
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
EP0173245B1 (en) * 1984-08-23 1989-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device having a polycrystalline silicon layer
JPS61224437A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置およびその製造方法
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
US4947192A (en) * 1988-03-07 1990-08-07 Xerox Corporation Monolithic silicon integrated circuit chip for a thermal ink jet printer
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5605853A (en) * 1996-05-28 1997-02-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606108B2 (ja) * 1976-07-07 1985-02-15 株式会社東芝 半導体装置の製造方法
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM
JPS53109487A (en) * 1977-03-07 1978-09-25 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
US4139786A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static MOS memory cell using inverted N-channel field-effect transistor
JPS5828744B2 (ja) * 1977-05-31 1983-06-17 テキサス インスツルメンツ インコ−ポレイテツド シリコンゲ−ト型集積回路デバイスおよびその製造方法
US4234889A (en) * 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
JPS5910581B2 (ja) * 1977-12-01 1984-03-09 富士通株式会社 半導体装置の製造方法
US4178674A (en) * 1978-03-27 1979-12-18 Intel Corporation Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
JPS54155783A (en) * 1978-05-29 1979-12-08 Matsushita Electric Ind Co Ltd Manufacture of insulating-gate type semiconductor device
JPS5519857A (en) * 1978-07-28 1980-02-12 Nec Corp Semiconductor
US4297721A (en) * 1978-11-03 1981-10-27 Mostek Corporation Extremely low current load device for integrated circuit
US4319260A (en) * 1979-09-05 1982-03-09 Texas Instruments Incorporated Multilevel interconnect system for high density silicon gate field effect transistors
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4305200A (en) * 1979-11-06 1981-12-15 Hewlett-Packard Company Method of forming self-registering source, drain, and gate contacts for FET transistor structures
US4336647A (en) * 1979-12-21 1982-06-29 Texas Instruments Incorporated Method of making implant programmable N-channel read only memory

Also Published As

Publication number Publication date
JPS6243547B2 (enExample) 1987-09-14
DE3068271D1 (en) 1984-07-19
EP0032025A1 (en) 1981-07-15
IE802706L (en) 1981-06-30
CA1150416A (en) 1983-07-19
JPS5696850A (en) 1981-08-05
US4399451A (en) 1983-08-16
EP0032025B1 (en) 1984-06-13

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Legal Events

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