CA1150416A - Semiconductor device and method for production thereof - Google Patents

Semiconductor device and method for production thereof

Info

Publication number
CA1150416A
CA1150416A CA000367608A CA367608A CA1150416A CA 1150416 A CA1150416 A CA 1150416A CA 000367608 A CA000367608 A CA 000367608A CA 367608 A CA367608 A CA 367608A CA 1150416 A CA1150416 A CA 1150416A
Authority
CA
Canada
Prior art keywords
layer
polycrystal
substrate
semiconductor layer
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000367608A
Other languages
English (en)
French (fr)
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of CA1150416A publication Critical patent/CA1150416A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10P32/1414—
    • H10P32/171—
    • H10P32/302—
    • H10W20/01—
    • H10W20/40—
    • H10W20/4451—
    • H10W44/401—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CA000367608A 1979-12-30 1980-12-29 Semiconductor device and method for production thereof Expired CA1150416A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17320179A JPS5696850A (en) 1979-12-30 1979-12-30 Semiconductor device and manufacture thereof
JP173201/79 1979-12-30

Publications (1)

Publication Number Publication Date
CA1150416A true CA1150416A (en) 1983-07-19

Family

ID=15955974

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000367608A Expired CA1150416A (en) 1979-12-30 1980-12-29 Semiconductor device and method for production thereof

Country Status (6)

Country Link
US (1) US4399451A (enExample)
EP (1) EP0032025B1 (enExample)
JP (1) JPS5696850A (enExample)
CA (1) CA1150416A (enExample)
DE (1) DE3068271D1 (enExample)
IE (1) IE50949B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141014A1 (de) * 1981-10-15 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung
JPS5893347A (ja) * 1981-11-30 1983-06-03 Toshiba Corp Ｍｏｓ型半導体装置及びその製造方法
US4554644A (en) * 1982-06-21 1985-11-19 Fairchild Camera & Instrument Corporation Static RAM cell
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
EP0173245B1 (en) * 1984-08-23 1989-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device having a polycrystalline silicon layer
JPS61224437A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置およびその製造方法
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
US4947192A (en) * 1988-03-07 1990-08-07 Xerox Corporation Monolithic silicon integrated circuit chip for a thermal ink jet printer
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5605853A (en) * 1996-05-28 1997-02-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606108B2 (ja) * 1976-07-07 1985-02-15 株式会社東芝 半導体装置の製造方法
US4110776A (en) * 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM
JPS53109487A (en) * 1977-03-07 1978-09-25 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
US4139786A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static MOS memory cell using inverted N-channel field-effect transistor
JPS5828744B2 (ja) * 1977-05-31 1983-06-17 テキサス インスツルメンツ インコ−ポレイテツド シリコンゲ−ト型集積回路デバイスおよびその製造方法
US4234889A (en) * 1977-05-31 1980-11-18 Texas Instruments Incorporated Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
JPS5910581B2 (ja) * 1977-12-01 1984-03-09 富士通株式会社 半導体装置の製造方法
US4178674A (en) * 1978-03-27 1979-12-18 Intel Corporation Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor
US4180826A (en) * 1978-05-19 1979-12-25 Intel Corporation MOS double polysilicon read-only memory and cell
JPS54155783A (en) * 1978-05-29 1979-12-08 Matsushita Electric Ind Co Ltd Manufacture of insulating-gate type semiconductor device
JPS5519857A (en) * 1978-07-28 1980-02-12 Nec Corp Semiconductor
US4297721A (en) * 1978-11-03 1981-10-27 Mostek Corporation Extremely low current load device for integrated circuit
US4319260A (en) * 1979-09-05 1982-03-09 Texas Instruments Incorporated Multilevel interconnect system for high density silicon gate field effect transistors
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4305200A (en) * 1979-11-06 1981-12-15 Hewlett-Packard Company Method of forming self-registering source, drain, and gate contacts for FET transistor structures
US4336647A (en) * 1979-12-21 1982-06-29 Texas Instruments Incorporated Method of making implant programmable N-channel read only memory

Also Published As

Publication number Publication date
JPS6243547B2 (enExample) 1987-09-14
DE3068271D1 (en) 1984-07-19
EP0032025A1 (en) 1981-07-15
IE802706L (en) 1981-06-30
IE50949B1 (en) 1986-08-20
JPS5696850A (en) 1981-08-05
US4399451A (en) 1983-08-16
EP0032025B1 (en) 1984-06-13

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Legal Events

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