IE35848B1 - Improvements in or relating to simiconductor devices - Google Patents

Improvements in or relating to simiconductor devices

Info

Publication number
IE35848B1
IE35848B1 IE1492/71A IE149271A IE35848B1 IE 35848 B1 IE35848 B1 IE 35848B1 IE 1492/71 A IE1492/71 A IE 1492/71A IE 149271 A IE149271 A IE 149271A IE 35848 B1 IE35848 B1 IE 35848B1
Authority
IE
Ireland
Prior art keywords
semi
film
gallium oxide
conductor
layer
Prior art date
Application number
IE1492/71A
Other languages
English (en)
Other versions
IE35848L (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE35848L publication Critical patent/IE35848L/xx
Publication of IE35848B1 publication Critical patent/IE35848B1/xx

Links

Classifications

    • H10P14/6312—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10P14/69215—
    • H10W74/43—
    • H10P14/662—

Landscapes

  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Weting (AREA)
IE1492/71A 1970-11-30 1971-11-25 Improvements in or relating to simiconductor devices IE35848B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (2)

Publication Number Publication Date
IE35848L IE35848L (en) 1972-05-30
IE35848B1 true IE35848B1 (en) 1976-06-09

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
IE1492/71A IE35848B1 (en) 1970-11-30 1971-11-25 Improvements in or relating to simiconductor devices

Country Status (13)

Country Link
JP (1) JPS5131153B1 (enExample)
BE (1) BE775868A (enExample)
CA (1) CA920285A (enExample)
CH (1) CH536035A (enExample)
DE (1) DE2158681C3 (enExample)
ES (1) ES397861A1 (enExample)
FR (1) FR2116159A5 (enExample)
GB (1) GB1360073A (enExample)
IE (1) IE35848B1 (enExample)
IT (1) IT945195B (enExample)
NL (1) NL155131B (enExample)
PH (1) PH11254A (enExample)
SE (1) SE367532B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (fr) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
DE19509864C2 (de) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Verfahren zur Alterung von lichtemittierenden Dioden
AU2001283424A1 (en) * 2000-08-17 2002-02-25 Power Signal Technologies, Inc. Glass-to-metal hermetically led array in a sealed solid state light
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
CN111725363A (zh) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 一种微型发光二极管背板及其制造方法

Also Published As

Publication number Publication date
BE775868A (fr) 1972-03-16
ES397861A1 (es) 1975-04-16
FR2116159A5 (enExample) 1972-07-07
DE2158681B2 (de) 1975-08-14
JPS5131153B1 (enExample) 1976-09-04
DE2158681A1 (de) 1972-07-20
SE367532B (enExample) 1974-05-27
IE35848L (en) 1972-05-30
NL7116220A (enExample) 1972-06-01
DE2158681C3 (de) 1978-12-07
CH536035A (de) 1973-04-15
PH11254A (en) 1977-10-28
IT945195B (it) 1973-05-10
CA920285A (en) 1973-01-30
NL155131B (nl) 1977-11-15
GB1360073A (en) 1974-07-17

Similar Documents

Publication Publication Date Title
GB1028782A (en) Semiconductor light-producing device
GB1485015A (en) Semi-conductor device manufacture
GB1446406A (en) Semiconductor devices
IE35848B1 (en) Improvements in or relating to simiconductor devices
GB1329760A (en) Ohmic contact for group iii-v p-type semiconductors
GB1347752A (en) Semiconductor electron emitter
GB1398635A (en) Semiconductor lasers
GB1514795A (en) Contacts on semiconductors
GB1375269A (enExample)
GB1300067A (en) Process for the fabrication of light-emitting semiconductor diodes
GB1500156A (en) Semiconductor injection laser
US3530014A (en) Method of producing gallium arsenide devices
GB1335979A (en) Cold cathode structure
GB1400025A (en) Gallium arsenide schottky barrier junctions
JPS54161887A (en) Schottky diode containing guard ring and its manufacture
JPS55162223A (en) Semiconductor device and its preparation
JPS54127687A (en) Planar-type reverse conducting thyristor
SU234521A1 (ru) Силовой управл емый кремниевый вентиль
JPS5642390A (en) Formation of electrode on semiconductor device
GB1523483A (en) Semiconductor optical modulator
FR2432785A1 (fr) Laser a semiconducteur a faible courant de seuil
GB1022901A (en) Improvements in and relating to semiconductor devices and to the manufacture thereof
GB995527A (en) Alloy-diffused transistor
GB1301929A (enExample)
JPS6423571A (en) Semiconductor element