ES397861A1 - Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio. - Google Patents

Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio.

Info

Publication number
ES397861A1
ES397861A1 ES397861A ES397861A ES397861A1 ES 397861 A1 ES397861 A1 ES 397861A1 ES 397861 A ES397861 A ES 397861A ES 397861 A ES397861 A ES 397861A ES 397861 A1 ES397861 A1 ES 397861A1
Authority
ES
Spain
Prior art keywords
procedure
light
useful life
compound
device containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES397861A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES397861A1 publication Critical patent/ES397861A1/es
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6312—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10P14/69215—
    • H10W74/43—
    • H10P14/662—

Landscapes

  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Weting (AREA)
ES397861A 1970-11-30 1971-11-30 Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio. Expired ES397861A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (1)

Publication Number Publication Date
ES397861A1 true ES397861A1 (es) 1975-04-16

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
ES397861A Expired ES397861A1 (es) 1970-11-30 1971-11-30 Procedimiento para prolongar la vida util de un dispositivode union p-n emisor de luz que contiene un compuesto de ga- lio.

Country Status (13)

Country Link
JP (1) JPS5131153B1 (enExample)
BE (1) BE775868A (enExample)
CA (1) CA920285A (enExample)
CH (1) CH536035A (enExample)
DE (1) DE2158681C3 (enExample)
ES (1) ES397861A1 (enExample)
FR (1) FR2116159A5 (enExample)
GB (1) GB1360073A (enExample)
IE (1) IE35848B1 (enExample)
IT (1) IT945195B (enExample)
NL (1) NL155131B (enExample)
PH (1) PH11254A (enExample)
SE (1) SE367532B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (fr) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
DE19509864C2 (de) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Verfahren zur Alterung von lichtemittierenden Dioden
AU2001283424A1 (en) * 2000-08-17 2002-02-25 Power Signal Technologies, Inc. Glass-to-metal hermetically led array in a sealed solid state light
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
CN111725363A (zh) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 一种微型发光二极管背板及其制造方法

Also Published As

Publication number Publication date
BE775868A (fr) 1972-03-16
FR2116159A5 (enExample) 1972-07-07
DE2158681B2 (de) 1975-08-14
JPS5131153B1 (enExample) 1976-09-04
DE2158681A1 (de) 1972-07-20
IE35848B1 (en) 1976-06-09
SE367532B (enExample) 1974-05-27
IE35848L (en) 1972-05-30
NL7116220A (enExample) 1972-06-01
DE2158681C3 (de) 1978-12-07
CH536035A (de) 1973-04-15
PH11254A (en) 1977-10-28
IT945195B (it) 1973-05-10
CA920285A (en) 1973-01-30
NL155131B (nl) 1977-11-15
GB1360073A (en) 1974-07-17

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