FR2287109A1 - Diode electroluminescente - Google Patents

Diode electroluminescente

Info

Publication number
FR2287109A1
FR2287109A1 FR7529892A FR7529892A FR2287109A1 FR 2287109 A1 FR2287109 A1 FR 2287109A1 FR 7529892 A FR7529892 A FR 7529892A FR 7529892 A FR7529892 A FR 7529892A FR 2287109 A1 FR2287109 A1 FR 2287109A1
Authority
FR
France
Prior art keywords
light emitting
emitting diode
diode
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7529892A
Other languages
English (en)
Other versions
FR2287109B1 (fr
Inventor
Anthony Richard Goodwin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2287109A1 publication Critical patent/FR2287109A1/fr
Application granted granted Critical
Publication of FR2287109B1 publication Critical patent/FR2287109B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FR7529892A 1974-10-03 1975-09-30 Diode electroluminescente Granted FR2287109A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4294774A GB1478152A (en) 1974-10-03 1974-10-03 Light emissive diode

Publications (2)

Publication Number Publication Date
FR2287109A1 true FR2287109A1 (fr) 1976-04-30
FR2287109B1 FR2287109B1 (fr) 1982-04-02

Family

ID=10426668

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7529892A Granted FR2287109A1 (fr) 1974-10-03 1975-09-30 Diode electroluminescente

Country Status (4)

Country Link
US (1) US4053914A (fr)
DE (1) DE2542072A1 (fr)
FR (1) FR2287109A1 (fr)
GB (1) GB1478152A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2315174A1 (fr) * 1975-06-17 1977-01-14 Matsushita Electric Ind Co Ltd Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication
DE2915888A1 (de) * 1978-04-21 1979-10-31 Philips Nv Elektrolumineszierende halbleiteranordnung
FR2436506A1 (fr) * 1978-09-15 1980-04-11 Westinghouse Electric Corp Transistor optique et methode de fonctionnement

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2624436C2 (de) * 1976-06-01 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtwellenleiter mit integriertem Detektorelement
FR2387519A1 (fr) * 1977-04-15 1978-11-10 Thomson Csf Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode
US4199385A (en) * 1977-09-21 1980-04-22 International Business Machines Corporation Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion
US4167016A (en) * 1977-09-21 1979-09-04 International Business Machines Corporation Optically isolated monolithic light emitting diode array
US4220960A (en) * 1978-10-25 1980-09-02 International Telephone And Telegraph Corporation Light emitting diode structure
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
US4249967A (en) * 1979-12-26 1981-02-10 International Telephone And Telegraph Corporation Method of manufacturing a light-emitting diode by liquid phase epitaxy
EP0042484A3 (fr) * 1980-06-25 1982-07-14 Northern Telecom Limited Diodes électroluminescentes à forte émission lumineuse
US4706101A (en) * 1984-10-27 1987-11-10 Kabushiki Kaisha Toshiba Light emitting diode formed of a compound semiconductor material
JPS62128587A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 半導体レ−ザ
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
JPH02174272A (ja) * 1988-12-17 1990-07-05 Samsung Electron Co Ltd 発光ダイオードアレイの製造方法
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US8587020B2 (en) 1997-11-19 2013-11-19 Epistar Corporation LED lamps
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
US6429460B1 (en) 2000-09-28 2002-08-06 United Epitaxy Company, Ltd. Highly luminous light emitting device
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
JP4866550B2 (ja) * 2002-12-20 2012-02-01 クリー インコーポレイテッド 自己整合型の半導体メサおよびコンタクト層を有する半導体デバイス、および、該デバイスに関連する構造の形成方法
EP2495772A1 (fr) * 2011-03-02 2012-09-05 Azzurro Semiconductors AG Dispositif électroluminescent semi-conducteur
FR3069106B1 (fr) * 2017-07-17 2019-10-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comportant un empilement a partie amincie et procede d'elaboration de la diode electroluminescente

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462605A (en) * 1965-09-22 1969-08-19 Gen Electric Semiconductor light-emitter and combination light-emitter-photocell wherein the reflector of the light-emitter is comprised of a material different from that of the light-emitter
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes
US3821775A (en) * 1971-09-23 1974-06-28 Spectronics Inc Edge emission gaas light emitter structure
US3699407A (en) * 1971-09-29 1972-10-17 Motorola Inc Electro-optical coupled-pair using a schottky barrier diode detector
JPS5310840B2 (fr) * 1972-05-04 1978-04-17
US3900863A (en) * 1974-05-13 1975-08-19 Westinghouse Electric Corp Light-emitting diode which generates light in three dimensions
US3996492A (en) * 1975-05-28 1976-12-07 International Business Machines Corporation Two-dimensional integrated injection laser array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2315174A1 (fr) * 1975-06-17 1977-01-14 Matsushita Electric Ind Co Ltd Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication
DE2915888A1 (de) * 1978-04-21 1979-10-31 Philips Nv Elektrolumineszierende halbleiteranordnung
FR2436506A1 (fr) * 1978-09-15 1980-04-11 Westinghouse Electric Corp Transistor optique et methode de fonctionnement

Also Published As

Publication number Publication date
DE2542072A1 (de) 1976-04-08
US4053914A (en) 1977-10-11
GB1478152A (en) 1977-06-29
FR2287109B1 (fr) 1982-04-02

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Legal Events

Date Code Title Description
ST Notification of lapse