BE763031A - Diode emettrice de lumiere dirigee - Google Patents

Diode emettrice de lumiere dirigee

Info

Publication number
BE763031A
BE763031A BE763031A BE763031A BE763031A BE 763031 A BE763031 A BE 763031A BE 763031 A BE763031 A BE 763031A BE 763031 A BE763031 A BE 763031A BE 763031 A BE763031 A BE 763031A
Authority
BE
Belgium
Prior art keywords
light emitting
emitting diode
directed light
directed
diode
Prior art date
Application number
BE763031A
Other languages
English (en)
Inventor
M G Coleman
T R Huffman
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of BE763031A publication Critical patent/BE763031A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
BE763031A 1970-02-16 1971-02-16 Diode emettrice de lumiere dirigee BE763031A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1157370A 1970-02-16 1970-02-16

Publications (1)

Publication Number Publication Date
BE763031A true BE763031A (fr) 1971-07-16

Family

ID=21750993

Family Applications (1)

Application Number Title Priority Date Filing Date
BE763031A BE763031A (fr) 1970-02-16 1971-02-16 Diode emettrice de lumiere dirigee

Country Status (6)

Country Link
US (1) US3675064A (fr)
BE (1) BE763031A (fr)
DE (2) DE7103228U (fr)
FR (1) FR2078618A5 (fr)
GB (1) GB1341221A (fr)
NL (1) NL7102051A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878406A (en) * 1972-07-21 1975-04-15 Licentia Gmbh Circuit arrangement for driving light emitting semiconductor components
IE39673B1 (en) * 1973-10-02 1978-12-06 Siemens Ag Improvements in or relating to semiconductor luminescence diodes
US4547701A (en) * 1983-07-01 1985-10-15 Bell Helicopter Textron Inc. IR Light for use with night vision goggles
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6380564B1 (en) * 2000-08-16 2002-04-30 United Epitaxy Company, Ltd. Semiconductor light emitting device
US7217947B2 (en) * 2004-08-06 2007-05-15 Northrop Grumman Corporation Semiconductor light source and method of making
DE102005055997A1 (de) * 2005-05-02 2006-11-09 Hieke, Bernhard Homogene Lichtquelle
JP2008305853A (ja) * 2007-06-05 2008-12-18 Toshiba Corp 半導体発光素子
WO2009115994A2 (fr) * 2008-03-20 2009-09-24 Nxp B.V. Dispositif de coupleur optoélectronique et son procédé de fabrication
JP2009258527A (ja) * 2008-04-21 2009-11-05 Hitachi Ltd 光学素子
CN102244188A (zh) * 2010-05-13 2011-11-16 展晶科技(深圳)有限公司 发光二极管芯片的电极结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3257626A (en) * 1962-12-31 1966-06-21 Ibm Semiconductor laser structures
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light
US3343026A (en) * 1963-11-27 1967-09-19 H P Associates Semi-conductive radiation source
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
GB1094831A (en) * 1965-07-21 1967-12-13 Standard Telephones Cables Ltd Semiconductor junction devices
US3534179A (en) * 1967-06-09 1970-10-13 Nat Res Corp Electroluminescent diode having a limited junction area and a photographic device utilizing the same

Also Published As

Publication number Publication date
DE7103228U (de) 1971-06-09
DE2104001A1 (de) 1971-11-04
GB1341221A (en) 1973-12-19
US3675064A (en) 1972-07-04
FR2078618A5 (fr) 1971-11-05
NL7102051A (fr) 1971-08-18

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