DE2158681C3 - Verfahren zur Behandlung eines lichtemittierenden Halbleiter-Bauelements mit PN-Übergang - Google Patents

Verfahren zur Behandlung eines lichtemittierenden Halbleiter-Bauelements mit PN-Übergang

Info

Publication number
DE2158681C3
DE2158681C3 DE2158681A DE2158681A DE2158681C3 DE 2158681 C3 DE2158681 C3 DE 2158681C3 DE 2158681 A DE2158681 A DE 2158681A DE 2158681 A DE2158681 A DE 2158681A DE 2158681 C3 DE2158681 C3 DE 2158681C3
Authority
DE
Germany
Prior art keywords
semiconductor component
diodes
oxide layer
immersed
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2158681A
Other languages
German (de)
English (en)
Other versions
DE2158681B2 (de
DE2158681A1 (de
Inventor
Robert Louis North Plainfield Hartman
Matthew Warren Township Kuhn
Bertram Westfield Schwartz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2158681A1 publication Critical patent/DE2158681A1/de
Publication of DE2158681B2 publication Critical patent/DE2158681B2/de
Application granted granted Critical
Publication of DE2158681C3 publication Critical patent/DE2158681C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2158681A 1970-11-30 1971-11-26 Verfahren zur Behandlung eines lichtemittierenden Halbleiter-Bauelements mit PN-Übergang Expired DE2158681C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9354470A 1970-11-30 1970-11-30
US14196471A 1971-05-10 1971-05-10

Publications (3)

Publication Number Publication Date
DE2158681A1 DE2158681A1 (de) 1972-07-20
DE2158681B2 DE2158681B2 (de) 1975-08-14
DE2158681C3 true DE2158681C3 (de) 1978-12-07

Family

ID=26787656

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2158681A Expired DE2158681C3 (de) 1970-11-30 1971-11-26 Verfahren zur Behandlung eines lichtemittierenden Halbleiter-Bauelements mit PN-Übergang

Country Status (13)

Country Link
JP (1) JPS5131153B1 (enExample)
BE (1) BE775868A (enExample)
CA (1) CA920285A (enExample)
CH (1) CH536035A (enExample)
DE (1) DE2158681C3 (enExample)
ES (1) ES397861A1 (enExample)
FR (1) FR2116159A5 (enExample)
GB (1) GB1360073A (enExample)
IE (1) IE35848B1 (enExample)
IT (1) IT945195B (enExample)
NL (1) NL155131B (enExample)
PH (1) PH11254A (enExample)
SE (1) SE367532B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19509864A1 (de) * 1995-03-17 1996-09-19 Siemens Nixdorf Inf Syst Verfahren zur Alterung von lichtemittierenden Dioden

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3776789A (en) * 1972-05-01 1973-12-04 Ibm METHOD FOR PROTECTING GaAs WAFER SURFACES
FR2287776A1 (fr) * 1974-10-09 1976-05-07 Lignes Telegraph Telephon Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
AU2001283424A1 (en) * 2000-08-17 2002-02-25 Power Signal Technologies, Inc. Glass-to-metal hermetically led array in a sealed solid state light
DE10261675B4 (de) * 2002-12-31 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht
CN111725363A (zh) * 2020-05-28 2020-09-29 南京中电熊猫液晶显示科技有限公司 一种微型发光二极管背板及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19509864A1 (de) * 1995-03-17 1996-09-19 Siemens Nixdorf Inf Syst Verfahren zur Alterung von lichtemittierenden Dioden
DE19509864C2 (de) * 1995-03-17 2001-10-04 Oce Printing Systems Gmbh Verfahren zur Alterung von lichtemittierenden Dioden

Also Published As

Publication number Publication date
NL7116220A (enExample) 1972-06-01
CA920285A (en) 1973-01-30
JPS5131153B1 (enExample) 1976-09-04
DE2158681B2 (de) 1975-08-14
PH11254A (en) 1977-10-28
FR2116159A5 (enExample) 1972-07-07
SE367532B (enExample) 1974-05-27
DE2158681A1 (de) 1972-07-20
BE775868A (fr) 1972-03-16
IE35848B1 (en) 1976-06-09
ES397861A1 (es) 1975-04-16
IT945195B (it) 1973-05-10
IE35848L (en) 1972-05-30
GB1360073A (en) 1974-07-17
NL155131B (nl) 1977-11-15
CH536035A (de) 1973-04-15

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee