ID22140A - Metoda untuk memproduksi film tipis semikonduktor dan peralatannya - Google Patents
Metoda untuk memproduksi film tipis semikonduktor dan peralatannyaInfo
- Publication number
- ID22140A ID22140A IDW990037A ID990037A ID22140A ID 22140 A ID22140 A ID 22140A ID W990037 A IDW990037 A ID W990037A ID 990037 A ID990037 A ID 990037A ID 22140 A ID22140 A ID 22140A
- Authority
- ID
- Indonesia
- Prior art keywords
- equipment
- methods
- semiconductor film
- thin semiconductor
- producing thin
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17357797 | 1997-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
ID22140A true ID22140A (id) | 1999-09-09 |
Family
ID=15963157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDW990037A ID22140A (id) | 1997-06-30 | 1998-06-29 | Metoda untuk memproduksi film tipis semikonduktor dan peralatannya |
Country Status (7)
Country | Link |
---|---|
US (1) | US20020005159A1 (id) |
KR (1) | KR100325500B1 (id) |
CN (1) | CN1237273A (id) |
ID (1) | ID22140A (id) |
RU (1) | RU2189663C2 (id) |
TW (1) | TW386249B (id) |
WO (1) | WO1999000829A1 (id) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002010472A1 (fr) * | 2000-07-28 | 2002-02-07 | Tokyo Electron Limited | Procede de formage de film |
KR100481312B1 (ko) * | 2002-10-16 | 2005-04-07 | 최대규 | 플라즈마 프로세스 챔버 |
JP4396547B2 (ja) * | 2004-06-28 | 2010-01-13 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
KR101224377B1 (ko) * | 2006-02-17 | 2013-01-21 | 삼성디스플레이 주식회사 | 실리콘층의 형성방법 및 이를 이용한 표시기판의 제조방법 |
JP2008177419A (ja) * | 2007-01-19 | 2008-07-31 | Nissin Electric Co Ltd | シリコン薄膜形成方法 |
US7779048B2 (en) * | 2007-04-13 | 2010-08-17 | Isilon Systems, Inc. | Systems and methods of providing possible value ranges |
US8158017B2 (en) * | 2008-05-12 | 2012-04-17 | Lam Research Corporation | Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations |
JP5422781B2 (ja) * | 2011-05-25 | 2014-02-19 | 株式会社クレブ | 発光分析装置 |
US9139908B2 (en) * | 2013-12-12 | 2015-09-22 | The Boeing Company | Gradient thin films |
RU2606248C2 (ru) * | 2015-05-14 | 2017-01-10 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
RU2606690C2 (ru) * | 2015-07-13 | 2017-01-10 | Закрытое акционерное общество Научно-инженерный центр "ИНКОМСИСТЕМ" | Способ получения покрытия из аморфного кремния на внутренней поверхности металлического субстрата |
RU2635981C2 (ru) * | 2015-12-28 | 2017-11-17 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Способ нанесения тонкого слоя аморфного кремния |
JP6623106B2 (ja) * | 2016-03-31 | 2019-12-18 | 古河電気工業株式会社 | 光導波路構造および光導波路回路 |
US11361940B2 (en) * | 2020-10-13 | 2022-06-14 | Applied Materials, Inc. | Push-pull power supply for multi-mesh processing chambers |
RU2769751C1 (ru) * | 2021-05-25 | 2022-04-05 | Акционерное общество "Научно-исследовательский институт точного машиностроения" | Устройство для нанесения сверхтолстых слоев поликристаллического кремния |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6225411A (ja) * | 1985-07-25 | 1987-02-03 | Fujitsu Ltd | プラズマcvd膜形成法 |
JP3327618B2 (ja) * | 1993-03-29 | 2002-09-24 | アネルバ株式会社 | プラズマ処理装置 |
JP3261514B2 (ja) * | 1993-10-18 | 2002-03-04 | アネルバ株式会社 | 絶縁膜形成装置 |
DE19711268B4 (de) * | 1996-03-18 | 2004-09-16 | Boe-Hydis Technology Co., Ltd. | Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium |
JPH09266174A (ja) * | 1996-03-29 | 1997-10-07 | Matsushita Electric Ind Co Ltd | 非晶質半導体薄膜の製造方法および製造装置 |
-
1998
- 1998-06-29 WO PCT/JP1998/002905 patent/WO1999000829A1/ja active IP Right Grant
- 1998-06-29 TW TW087110472A patent/TW386249B/zh active
- 1998-06-29 RU RU99105927/28A patent/RU2189663C2/ru not_active IP Right Cessation
- 1998-06-29 ID IDW990037A patent/ID22140A/id unknown
- 1998-06-29 KR KR1019997001610A patent/KR100325500B1/ko not_active IP Right Cessation
- 1998-06-29 US US09/242,866 patent/US20020005159A1/en not_active Abandoned
- 1998-06-29 CN CN98801248A patent/CN1237273A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1237273A (zh) | 1999-12-01 |
RU2189663C2 (ru) | 2002-09-20 |
WO1999000829A1 (fr) | 1999-01-07 |
US20020005159A1 (en) | 2002-01-17 |
KR100325500B1 (ko) | 2002-02-25 |
TW386249B (en) | 2000-04-01 |
KR20000068372A (ko) | 2000-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69533127D1 (de) | Kühlkörper | |
DE69625265D1 (de) | Halbleiterstrukturen | |
DE69633203D1 (de) | Halbleiterlaser-Vorrichtungen | |
DE69610457D1 (de) | Halbleitervorrichtung | |
KR970004020A (ko) | 반도체장치 | |
KR970005998A (ko) | 반도체 장치 | |
ID23008A (id) | Kantong dan metode produksi film untuknya | |
EP0977259A3 (en) | Semiconductor device and method of producing the same | |
EP0862208A3 (en) | Semiconductor device and method of manufacturing the same | |
DE69631940D1 (de) | Halbleitervorrichtung | |
KR970004015A (ko) | 반도체장치 및 그의 제조방법 | |
ID22140A (id) | Metoda untuk memproduksi film tipis semikonduktor dan peralatannya | |
ID29053A (id) | Metode untuk menghasilkan 3-alkanoilindola dan 3-alkilindola | |
DE59609022D1 (de) | Verbindungssubstrat | |
DE69619106D1 (de) | Homogenes kühlsubstrat | |
KR970004195A (ko) | 반도체 레이저장치 및 그 제조방법 | |
ID21289A (id) | Metode perekatan dan peralatan daripadanya | |
DE69620944D1 (de) | Halbleiter-Prüfmethode | |
NO954922D0 (no) | AHUK - Isolerende laget | |
AU8748698A (en) | Semiconductor device and method of fabricating the same | |
KR970004171A (ko) | 반도체장치 및 그 제조방법 | |
ID16995A (id) | Peralatan titik-pengelasan dan metode untuk pembuatan strukturnya | |
DE69635334D1 (de) | Halbleiteranordnung | |
KR970025773U (ko) | 반도체 장치 | |
KR970003228U (ko) | 반도체 장치 |