ID22140A - Metoda untuk memproduksi film tipis semikonduktor dan peralatannya - Google Patents

Metoda untuk memproduksi film tipis semikonduktor dan peralatannya

Info

Publication number
ID22140A
ID22140A IDW990037A ID990037A ID22140A ID 22140 A ID22140 A ID 22140A ID W990037 A IDW990037 A ID W990037A ID 990037 A ID990037 A ID 990037A ID 22140 A ID22140 A ID 22140A
Authority
ID
Indonesia
Prior art keywords
equipment
methods
semiconductor film
thin semiconductor
producing thin
Prior art date
Application number
IDW990037A
Other languages
English (en)
Inventor
Masatoshi Kitagawa
Akihisa Yoshida
Munehiro Shibuya
Hideo Sugai
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of ID22140A publication Critical patent/ID22140A/id

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
IDW990037A 1997-06-30 1998-06-29 Metoda untuk memproduksi film tipis semikonduktor dan peralatannya ID22140A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17357797 1997-06-30

Publications (1)

Publication Number Publication Date
ID22140A true ID22140A (id) 1999-09-09

Family

ID=15963157

Family Applications (1)

Application Number Title Priority Date Filing Date
IDW990037A ID22140A (id) 1997-06-30 1998-06-29 Metoda untuk memproduksi film tipis semikonduktor dan peralatannya

Country Status (7)

Country Link
US (1) US20020005159A1 (id)
KR (1) KR100325500B1 (id)
CN (1) CN1237273A (id)
ID (1) ID22140A (id)
RU (1) RU2189663C2 (id)
TW (1) TW386249B (id)
WO (1) WO1999000829A1 (id)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7060614B2 (en) * 2000-07-28 2006-06-13 Tokyo Electron Limited Method for forming film
KR100481312B1 (ko) * 2002-10-16 2005-04-07 최대규 플라즈마 프로세스 챔버
JP4396547B2 (ja) * 2004-06-28 2010-01-13 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
KR101224377B1 (ko) * 2006-02-17 2013-01-21 삼성디스플레이 주식회사 실리콘층의 형성방법 및 이를 이용한 표시기판의 제조방법
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法
US7779048B2 (en) * 2007-04-13 2010-08-17 Isilon Systems, Inc. Systems and methods of providing possible value ranges
US8158017B2 (en) * 2008-05-12 2012-04-17 Lam Research Corporation Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
CN103562435B (zh) * 2011-05-25 2014-07-30 株式会社Crev 发光分析装置
US9139908B2 (en) * 2013-12-12 2015-09-22 The Boeing Company Gradient thin films
RU2606248C2 (ru) * 2015-05-14 2017-01-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора
RU2606690C2 (ru) * 2015-07-13 2017-01-10 Закрытое акционерное общество Научно-инженерный центр "ИНКОМСИСТЕМ" Способ получения покрытия из аморфного кремния на внутренней поверхности металлического субстрата
RU2635981C2 (ru) * 2015-12-28 2017-11-17 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) Способ нанесения тонкого слоя аморфного кремния
JP6623106B2 (ja) * 2016-03-31 2019-12-18 古河電気工業株式会社 光導波路構造および光導波路回路
WO2020060929A1 (en) * 2018-09-21 2020-03-26 Lam Research Corporation Method for conditioning a plasma processing chamber
US11361940B2 (en) * 2020-10-13 2022-06-14 Applied Materials, Inc. Push-pull power supply for multi-mesh processing chambers
RU2769751C1 (ru) * 2021-05-25 2022-04-05 Акционерное общество "Научно-исследовательский институт точного машиностроения" Устройство для нанесения сверхтолстых слоев поликристаллического кремния

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225411A (ja) * 1985-07-25 1987-02-03 Fujitsu Ltd プラズマｃｖｄ膜形成法
JP3327618B2 (ja) * 1993-03-29 2002-09-24 アネルバ株式会社 プラズマ処理装置
JP3261514B2 (ja) * 1993-10-18 2002-03-04 アネルバ株式会社 絶縁膜形成装置
US6093660A (en) * 1996-03-18 2000-07-25 Hyundai Electronics Industries Co., Ltd. Inductively coupled plasma chemical vapor deposition technology
JPH09266174A (ja) * 1996-03-29 1997-10-07 Matsushita Electric Ind Co Ltd 非晶質半導体薄膜の製造方法および製造装置

Also Published As

Publication number Publication date
TW386249B (en) 2000-04-01
US20020005159A1 (en) 2002-01-17
RU2189663C2 (ru) 2002-09-20
KR100325500B1 (ko) 2002-02-25
CN1237273A (zh) 1999-12-01
WO1999000829A1 (fr) 1999-01-07
KR20000068372A (ko) 2000-11-25

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