HU181246B - High voltage solid state switch - Google Patents
High voltage solid state switch Download PDFInfo
- Publication number
- HU181246B HU181246B HU80803113A HU311380A HU181246B HU 181246 B HU181246 B HU 181246B HU 80803113 A HU80803113 A HU 80803113A HU 311380 A HU311380 A HU 311380A HU 181246 B HU181246 B HU 181246B
- Authority
- HU
- Hungary
- Prior art keywords
- region
- anode
- gate
- cathode
- type
- Prior art date
Links
- 239000007787 solid Substances 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 10
- 238000011109 contamination Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10777579A | 1979-12-28 | 1979-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HU181246B true HU181246B (en) | 1983-06-28 |
Family
ID=22318408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HU80803113A HU181246B (en) | 1979-12-28 | 1980-12-23 | High voltage solid state switch |
Country Status (21)
| Country | Link |
|---|---|
| JP (1) | JPS56103467A (nl) |
| KR (1) | KR840002413B1 (nl) |
| AU (1) | AU534874B2 (nl) |
| BE (1) | BE886821A (nl) |
| CA (1) | CA1145057A (nl) |
| CH (1) | CH652863A5 (nl) |
| DD (1) | DD156039A5 (nl) |
| DE (1) | DE3048702A1 (nl) |
| DK (1) | DK549780A (nl) |
| ES (1) | ES498097A0 (nl) |
| FR (1) | FR2473790A1 (nl) |
| GB (1) | GB2066569B (nl) |
| HK (1) | HK69684A (nl) |
| HU (1) | HU181246B (nl) |
| IE (1) | IE50697B1 (nl) |
| IL (1) | IL61780A (nl) |
| IT (1) | IT1134896B (nl) |
| NL (1) | NL8007051A (nl) |
| PL (1) | PL228665A1 (nl) |
| SE (1) | SE453621B (nl) |
| SG (1) | SG35184G (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
| US4573065A (en) * | 1982-12-10 | 1986-02-25 | At&T Bell Laboratories | Radial high voltage switch structure |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1039915A (en) * | 1964-05-25 | 1966-08-24 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| JPS5135114B1 (nl) * | 1970-12-28 | 1976-09-30 | ||
| US3725683A (en) * | 1971-02-03 | 1973-04-03 | Wescom | Discrete and integrated-type circuit |
| DE2133430A1 (de) * | 1971-07-05 | 1973-01-18 | Siemens Ag | Planar-vierschichtdiode |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5032942U (nl) * | 1973-07-23 | 1975-04-10 | ||
| JPS5210061A (en) * | 1975-07-15 | 1977-01-26 | Hitachi Ltd | Thyristor circuit |
| US4130827A (en) * | 1976-12-03 | 1978-12-19 | Bell Telephone Laboratories, Incorporated | Integrated circuit switching network using low substrate leakage current thyristor construction |
| JPS5412682A (en) * | 1977-06-30 | 1979-01-30 | Nec Corp | Thyristor |
| GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
| GB2049283B (en) * | 1978-12-20 | 1983-07-27 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
-
1980
- 1980-10-30 CA CA000363569A patent/CA1145057A/en not_active Expired
- 1980-12-12 IE IE2604/80A patent/IE50697B1/en unknown
- 1980-12-16 GB GB8040186A patent/GB2066569B/en not_active Expired
- 1980-12-16 SE SE8008851A patent/SE453621B/sv not_active IP Right Cessation
- 1980-12-17 AU AU65449/80A patent/AU534874B2/en not_active Ceased
- 1980-12-19 CH CH9424/80A patent/CH652863A5/de not_active IP Right Cessation
- 1980-12-19 DD DD80226369A patent/DD156039A5/de unknown
- 1980-12-22 IL IL61780A patent/IL61780A/xx unknown
- 1980-12-22 PL PL22866580A patent/PL228665A1/xx unknown
- 1980-12-23 DK DK549780A patent/DK549780A/da not_active Application Discontinuation
- 1980-12-23 BE BE0/203288A patent/BE886821A/fr not_active IP Right Cessation
- 1980-12-23 DE DE19803048702 patent/DE3048702A1/de not_active Withdrawn
- 1980-12-23 ES ES498097A patent/ES498097A0/es active Granted
- 1980-12-23 HU HU80803113A patent/HU181246B/hu unknown
- 1980-12-24 FR FR8027441A patent/FR2473790A1/fr active Granted
- 1980-12-24 NL NL8007051A patent/NL8007051A/nl not_active Application Discontinuation
- 1980-12-24 IT IT26947/80A patent/IT1134896B/it active
- 1980-12-26 KR KR1019800004953A patent/KR840002413B1/ko active
- 1980-12-27 JP JP18942880A patent/JPS56103467A/ja active Pending
-
1984
- 1984-05-04 SG SG351/84A patent/SG35184G/en unknown
- 1984-09-06 HK HK696/84A patent/HK69684A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE453621B (sv) | 1988-02-15 |
| IT1134896B (it) | 1986-08-20 |
| CH652863A5 (de) | 1985-11-29 |
| DK549780A (da) | 1981-06-29 |
| NL8007051A (nl) | 1981-07-16 |
| IE802604L (en) | 1981-06-28 |
| IL61780A0 (en) | 1981-01-30 |
| IT8026947A0 (it) | 1980-12-24 |
| CA1145057A (en) | 1983-04-19 |
| KR830004678A (ko) | 1983-07-16 |
| GB2066569B (en) | 1983-09-14 |
| ES8201376A1 (es) | 1981-12-16 |
| ES498097A0 (es) | 1981-12-16 |
| BE886821A (fr) | 1981-04-16 |
| FR2473790B1 (nl) | 1985-03-08 |
| DD156039A5 (de) | 1982-07-21 |
| AU6544980A (en) | 1981-07-02 |
| HK69684A (en) | 1984-09-14 |
| IE50697B1 (en) | 1986-06-25 |
| AU534874B2 (en) | 1984-02-16 |
| IL61780A (en) | 1983-07-31 |
| FR2473790A1 (fr) | 1981-07-17 |
| JPS56103467A (en) | 1981-08-18 |
| GB2066569A (en) | 1981-07-08 |
| SG35184G (en) | 1985-02-08 |
| SE8008851L (sv) | 1981-06-29 |
| DE3048702A1 (de) | 1981-09-10 |
| PL228665A1 (nl) | 1981-09-04 |
| KR840002413B1 (ko) | 1984-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100348668B1 (ko) | 박막soi장치및그제조방법 | |
| US20060220138A1 (en) | ESD protection circuit with scalable current capacity and voltage capacity | |
| US5341003A (en) | MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element | |
| US6943408B2 (en) | Semiconductor bidirectional switching device | |
| KR19980032845A (ko) | 제 1 확산링에서 공간을 이룬 알루미늄 배리어 금속을 가진 고전압 전력 쇼트키 | |
| US20070075367A1 (en) | SOI semiconductor component with increased dielectric strength | |
| JPS58501204A (ja) | 制御されたブレ−クオ−バ−双方向半導体スイツチ | |
| JP2687163B2 (ja) | ターンオフ可能なサイリスタ | |
| US4587656A (en) | High voltage solid-state switch | |
| HU181246B (en) | High voltage solid state switch | |
| US6208011B1 (en) | Voltage-controlled power semiconductor device | |
| KR830002293B1 (ko) | 고압용 게이트 다이오드 스위치 | |
| JPH0328836B2 (nl) | ||
| US20230075374A1 (en) | Semiconductor-on-insulator device with lightly doped extension region | |
| US20230387103A1 (en) | Semiconductor structure | |
| JP2881907B2 (ja) | 電力用半導体装置 | |
| JP2002043586A (ja) | 半導体装置 | |
| CA1123122A (en) | High voltage dielectrically isolated dual gate solid-state switch | |
| JP4506424B2 (ja) | 保護回路 | |
| CA1142265A (en) | High voltage dielectrically isolated solid-state switch | |
| CN118156287A (zh) | 半导体器件及其生产方法 | |
| US20030122149A1 (en) | Complex semiconductor device and electric power conversion appratus using it | |
| CA1121517A (en) | High voltage dielectrically isolated remote gate solid-state switch | |
| IE48719B1 (en) | Solid-state switching device | |
| EP1075029A1 (en) | Composite semiconductor device |