PL228665A1 - - Google Patents
Info
- Publication number
- PL228665A1 PL228665A1 PL22866580A PL22866580A PL228665A1 PL 228665 A1 PL228665 A1 PL 228665A1 PL 22866580 A PL22866580 A PL 22866580A PL 22866580 A PL22866580 A PL 22866580A PL 228665 A1 PL228665 A1 PL 228665A1
- Authority
- PL
- Poland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10777579A | 1979-12-28 | 1979-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
PL228665A1 true PL228665A1 (nl) | 1981-09-04 |
Family
ID=22318408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL22866580A PL228665A1 (nl) | 1979-12-28 | 1980-12-22 |
Country Status (21)
Country | Link |
---|---|
JP (1) | JPS56103467A (nl) |
KR (1) | KR840002413B1 (nl) |
AU (1) | AU534874B2 (nl) |
BE (1) | BE886821A (nl) |
CA (1) | CA1145057A (nl) |
CH (1) | CH652863A5 (nl) |
DD (1) | DD156039A5 (nl) |
DE (1) | DE3048702A1 (nl) |
DK (1) | DK549780A (nl) |
ES (1) | ES498097A0 (nl) |
FR (1) | FR2473790A1 (nl) |
GB (1) | GB2066569B (nl) |
HK (1) | HK69684A (nl) |
HU (1) | HU181246B (nl) |
IE (1) | IE50697B1 (nl) |
IL (1) | IL61780A (nl) |
IT (1) | IT1134896B (nl) |
NL (1) | NL8007051A (nl) |
PL (1) | PL228665A1 (nl) |
SE (1) | SE453621B (nl) |
SG (1) | SG35184G (nl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
US4573065A (en) * | 1982-12-10 | 1986-02-25 | At&T Bell Laboratories | Radial high voltage switch structure |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1039915A (en) * | 1964-05-25 | 1966-08-24 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
JPS5135114B1 (nl) * | 1970-12-28 | 1976-09-30 | ||
US3725683A (en) * | 1971-02-03 | 1973-04-03 | Wescom | Discrete and integrated-type circuit |
DE2133430A1 (de) * | 1971-07-05 | 1973-01-18 | Siemens Ag | Planar-vierschichtdiode |
DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
JPS5032942U (nl) * | 1973-07-23 | 1975-04-10 | ||
JPS5210061A (en) * | 1975-07-15 | 1977-01-26 | Hitachi Ltd | Thyristor circuit |
US4130827A (en) * | 1976-12-03 | 1978-12-19 | Bell Telephone Laboratories, Incorporated | Integrated circuit switching network using low substrate leakage current thyristor construction |
JPS5412682A (en) * | 1977-06-30 | 1979-01-30 | Nec Corp | Thyristor |
GB1587540A (en) * | 1977-12-20 | 1981-04-08 | Philips Electronic Associated | Gate turn-off diodes and arrangements including such diodes |
GB2049283B (en) * | 1978-12-20 | 1983-07-27 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
-
1980
- 1980-10-30 CA CA000363569A patent/CA1145057A/en not_active Expired
- 1980-12-12 IE IE2604/80A patent/IE50697B1/en unknown
- 1980-12-16 GB GB8040186A patent/GB2066569B/en not_active Expired
- 1980-12-16 SE SE8008851A patent/SE453621B/sv not_active IP Right Cessation
- 1980-12-17 AU AU65449/80A patent/AU534874B2/en not_active Ceased
- 1980-12-19 CH CH9424/80A patent/CH652863A5/de not_active IP Right Cessation
- 1980-12-19 DD DD80226369A patent/DD156039A5/de unknown
- 1980-12-22 IL IL61780A patent/IL61780A/xx unknown
- 1980-12-22 PL PL22866580A patent/PL228665A1/xx unknown
- 1980-12-23 DK DK549780A patent/DK549780A/da not_active Application Discontinuation
- 1980-12-23 BE BE0/203288A patent/BE886821A/fr not_active IP Right Cessation
- 1980-12-23 DE DE19803048702 patent/DE3048702A1/de not_active Withdrawn
- 1980-12-23 ES ES498097A patent/ES498097A0/es active Granted
- 1980-12-23 HU HU80803113A patent/HU181246B/hu unknown
- 1980-12-24 FR FR8027441A patent/FR2473790A1/fr active Granted
- 1980-12-24 NL NL8007051A patent/NL8007051A/nl not_active Application Discontinuation
- 1980-12-24 IT IT26947/80A patent/IT1134896B/it active
- 1980-12-26 KR KR1019800004953A patent/KR840002413B1/ko active
- 1980-12-27 JP JP18942880A patent/JPS56103467A/ja active Pending
-
1984
- 1984-05-04 SG SG351/84A patent/SG35184G/en unknown
- 1984-09-06 HK HK696/84A patent/HK69684A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
HU181246B (en) | 1983-06-28 |
SE453621B (sv) | 1988-02-15 |
IT1134896B (it) | 1986-08-20 |
CH652863A5 (de) | 1985-11-29 |
DK549780A (da) | 1981-06-29 |
NL8007051A (nl) | 1981-07-16 |
IE802604L (en) | 1981-06-28 |
IL61780A0 (en) | 1981-01-30 |
IT8026947A0 (it) | 1980-12-24 |
CA1145057A (en) | 1983-04-19 |
KR830004678A (ko) | 1983-07-16 |
GB2066569B (en) | 1983-09-14 |
ES8201376A1 (es) | 1981-12-16 |
ES498097A0 (es) | 1981-12-16 |
BE886821A (fr) | 1981-04-16 |
FR2473790B1 (nl) | 1985-03-08 |
DD156039A5 (de) | 1982-07-21 |
AU6544980A (en) | 1981-07-02 |
HK69684A (en) | 1984-09-14 |
IE50697B1 (en) | 1986-06-25 |
AU534874B2 (en) | 1984-02-16 |
IL61780A (en) | 1983-07-31 |
FR2473790A1 (fr) | 1981-07-17 |
JPS56103467A (en) | 1981-08-18 |
GB2066569A (en) | 1981-07-08 |
SG35184G (en) | 1985-02-08 |
SE8008851L (sv) | 1981-06-29 |
DE3048702A1 (de) | 1981-09-10 |
KR840002413B1 (ko) | 1984-12-27 |