HU181246B - High voltage solid state switch - Google Patents

High voltage solid state switch Download PDF

Info

Publication number
HU181246B
HU181246B HU80803113A HU311380A HU181246B HU 181246 B HU181246 B HU 181246B HU 80803113 A HU80803113 A HU 80803113A HU 311380 A HU311380 A HU 311380A HU 181246 B HU181246 B HU 181246B
Authority
HU
Hungary
Prior art keywords
region
anode
gate
cathode
type
Prior art date
Application number
HU80803113A
Other languages
English (en)
Hungarian (hu)
Inventor
Adrianr Hatman
Terence J Rilay
Peter W Schackle
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of HU181246B publication Critical patent/HU181246B/hu

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Ein Hochspannungs-Festkoerperschalter verwendet einen dielektrisch isolierten, schwach dotierten n-Halbleiterkoerper (16) mit einer stark dotierten p-Anodenzone (18), einer stark dotierten ersten n-Gate-Zone (20), einer maessig dotierten, zweiten, p-Gate-Zone (22) und einer stark dotierten n-Kathodenzone.Die zweite Gate-Zone umgibt die Kathodenzone (24). Die erste Gate-Zone liegt direkt zwischen der Anodenzone und der zweiten Gate-Zone. Die Dotierungsstaerken der Zonen und die oertliche Lage der ersten Gate-Zone zwischen der Anoden- und Kathodenzone tragen zur Stromunterbrechungsfunktion des Schalters bei.
HU80803113A 1979-12-28 1980-12-23 High voltage solid state switch HU181246B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28

Publications (1)

Publication Number Publication Date
HU181246B true HU181246B (en) 1983-06-28

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
HU80803113A HU181246B (en) 1979-12-28 1980-12-23 High voltage solid state switch

Country Status (21)

Country Link
JP (1) JPS56103467A (de)
KR (1) KR840002413B1 (de)
AU (1) AU534874B2 (de)
BE (1) BE886821A (de)
CA (1) CA1145057A (de)
CH (1) CH652863A5 (de)
DD (1) DD156039A5 (de)
DE (1) DE3048702A1 (de)
DK (1) DK549780A (de)
ES (1) ES498097A0 (de)
FR (1) FR2473790A1 (de)
GB (1) GB2066569B (de)
HK (1) HK69684A (de)
HU (1) HU181246B (de)
IE (1) IE50697B1 (de)
IL (1) IL61780A (de)
IT (1) IT1134896B (de)
NL (1) NL8007051A (de)
PL (1) PL228665A1 (de)
SE (1) SE453621B (de)
SG (1) SG35184G (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
JPS5135114B1 (de) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (de) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch

Also Published As

Publication number Publication date
SE453621B (sv) 1988-02-15
IT1134896B (it) 1986-08-20
CH652863A5 (de) 1985-11-29
DK549780A (da) 1981-06-29
NL8007051A (nl) 1981-07-16
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
IT8026947A0 (it) 1980-12-24
CA1145057A (en) 1983-04-19
KR830004678A (ko) 1983-07-16
GB2066569B (en) 1983-09-14
ES8201376A1 (es) 1981-12-16
ES498097A0 (es) 1981-12-16
BE886821A (fr) 1981-04-16
FR2473790B1 (de) 1985-03-08
DD156039A5 (de) 1982-07-21
AU6544980A (en) 1981-07-02
HK69684A (en) 1984-09-14
IE50697B1 (en) 1986-06-25
AU534874B2 (en) 1984-02-16
IL61780A (en) 1983-07-31
FR2473790A1 (fr) 1981-07-17
JPS56103467A (en) 1981-08-18
GB2066569A (en) 1981-07-08
SG35184G (en) 1985-02-08
SE8008851L (sv) 1981-06-29
DE3048702A1 (de) 1981-09-10
PL228665A1 (de) 1981-09-04
KR840002413B1 (ko) 1984-12-27

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