HK85095A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
HK85095A
HK85095A HK85095A HK85095A HK85095A HK 85095 A HK85095 A HK 85095A HK 85095 A HK85095 A HK 85095A HK 85095 A HK85095 A HK 85095A HK 85095 A HK85095 A HK 85095A
Authority
HK
Hong Kong
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
HK85095A
Other languages
English (en)
Inventor
Kazumasa Yanagisawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK85095A publication Critical patent/HK85095A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
HK85095A 1985-03-25 1995-06-01 Semiconductor memory HK85095A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60058359A JPH0766660B2 (ja) 1985-03-25 1985-03-25 ダイナミツク型ｒａｍ
SG157994A SG157994G (en) 1985-03-25 1994-10-27 Semiconductor memory

Publications (1)

Publication Number Publication Date
HK85095A true HK85095A (en) 1995-06-09

Family

ID=26399414

Family Applications (1)

Application Number Title Priority Date Filing Date
HK85095A HK85095A (en) 1985-03-25 1995-06-01 Semiconductor memory

Country Status (6)

Country Link
US (1) US4736344A (xx)
EP (1) EP0199128B1 (xx)
JP (1) JPH0766660B2 (xx)
KR (1) KR940000611B1 (xx)
HK (1) HK85095A (xx)
SG (1) SG157994G (xx)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6356732A (ja) * 1986-08-27 1988-03-11 Nec Corp マイクロコンピユ−タシステム
JPS63263694A (ja) * 1987-04-21 1988-10-31 Nec Corp ダイナミツク型半導体記憶装置
JPH0229989A (ja) * 1988-07-19 1990-01-31 Mitsubishi Electric Corp ダイナミックランダムアクセスメモリ装置
US5270967A (en) * 1991-01-16 1993-12-14 National Semiconductor Corporation Refreshing ferroelectric capacitors
JP3714489B2 (ja) * 1995-03-03 2005-11-09 株式会社日立製作所 ダイナミック型ｒａｍとメモリモジュール
JP3874234B2 (ja) * 2000-04-06 2007-01-31 株式会社ルネサステクノロジ 半導体集積回路装置
JP3726661B2 (ja) * 2000-09-01 2005-12-14 セイコーエプソン株式会社 半導体メモリ装置のリフレッシュ制御
KR100468720B1 (ko) * 2002-03-08 2005-01-29 삼성전자주식회사 메모리 셀들의 리프레쉬 방법 및 리프레쉬 제어회로
EP1647990B1 (fr) * 2003-01-29 2008-12-24 Stmicroelectronics SA Procédé de rafraîchissement d'une mémoire vive dynamique, et dispositif de mémoire vive dynamique correspondant, en particulier incorporé dans un téléphone mobile cellulaire
US6781908B1 (en) * 2003-02-19 2004-08-24 Freescale Semiconductor, Inc. Memory having variable refresh control and method therefor
US6778457B1 (en) 2003-02-19 2004-08-17 Freescale Semiconductor, Inc. Variable refresh control for a memory
US7167400B2 (en) * 2004-06-22 2007-01-23 Micron Technology, Inc. Apparatus and method for improving dynamic refresh in a memory device
US7484140B2 (en) * 2004-07-07 2009-01-27 Freescale Semiconductor, Inc. Memory having variable refresh control and method therefor
JP4291239B2 (ja) * 2004-09-10 2009-07-08 エルピーダメモリ株式会社 半導体記憶装置及びテスト方法
US8161232B2 (en) * 2006-04-26 2012-04-17 The Invention Science Fund I, Llc Periodically and empirically determined memory refresh intervals
US7990795B2 (en) * 2009-02-19 2011-08-02 Freescale Semiconductor, Inc. Dynamic random access memory (DRAM) refresh
US9269418B2 (en) 2012-02-06 2016-02-23 Arm Limited Apparatus and method for controlling refreshing of data in a DRAM
KR101977665B1 (ko) * 2012-07-12 2019-08-28 삼성전자주식회사 리프레쉬 주기를 조절하는 반도체 메모리 장치, 메모리 시스템 및 그 동작방법
US8848471B2 (en) 2012-08-08 2014-09-30 International Business Machines Corporation Method for optimizing refresh rate for DRAM
US9058896B2 (en) 2012-08-29 2015-06-16 International Business Machines Corporation DRAM refresh
US8887014B2 (en) 2012-12-11 2014-11-11 International Business Machines Corporation Managing errors in a DRAM by weak cell encoding
US8898544B2 (en) 2012-12-11 2014-11-25 International Business Machines Corporation DRAM error detection, evaluation, and correction

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2247835C3 (de) * 1972-09-29 1978-10-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Regenerieren der Speicherinhalte von MOS-Speichern und MOS-Speicher zur Durchführung dieses Verfahrens
JPS51127629A (en) * 1975-04-30 1976-11-06 Hitachi Ltd Semiconductor memory compensating defect bit
US4207618A (en) * 1978-06-26 1980-06-10 Texas Instruments Incorporated On-chip refresh for dynamic memory
US4333167A (en) * 1979-10-05 1982-06-01 Texas Instruments Incorporated Dynamic memory with on-chip refresh invisible to CPU
DE3009872C2 (de) * 1980-03-14 1984-05-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Regenerieren von in einem dynamischen MOS-Speicher gespeicherten Daten unter Berücksichtigung von Schreib- und Lesezyklen und Schaltungsanordnung zur Durchführung des Verfahrens
US4360903A (en) * 1980-09-10 1982-11-23 Mostek Corporation Clocking system for a self-refreshed dynamic memory
JPS5940394A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd Ｍｏｓ記憶装置
JPS59117794A (ja) * 1982-12-24 1984-07-07 Hitachi Micro Comput Eng Ltd ダイナミック型ｒａｍ

Also Published As

Publication number Publication date
EP0199128A2 (en) 1986-10-29
EP0199128B1 (en) 1992-08-05
KR940000611B1 (ko) 1994-01-26
EP0199128A3 (en) 1989-10-25
JPS61217988A (ja) 1986-09-27
JPH0766660B2 (ja) 1995-07-19
SG157994G (en) 1995-03-17
KR860007664A (ko) 1986-10-15
US4736344A (en) 1988-04-05

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)