JPS51127629A - Semiconductor memory compensating defect bit - Google Patents

Semiconductor memory compensating defect bit

Info

Publication number
JPS51127629A
JPS51127629A JP50051375A JP5137575A JPS51127629A JP S51127629 A JPS51127629 A JP S51127629A JP 50051375 A JP50051375 A JP 50051375A JP 5137575 A JP5137575 A JP 5137575A JP S51127629 A JPS51127629 A JP S51127629A
Authority
JP
Japan
Prior art keywords
defect bit
semiconductor memory
compensating defect
memory compensating
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50051375A
Other languages
Japanese (ja)
Other versions
JPS5427220B2 (en
Inventor
Kozo Kayashima
Hidekazu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50051375A priority Critical patent/JPS51127629A/en
Publication of JPS51127629A publication Critical patent/JPS51127629A/en
Publication of JPS5427220B2 publication Critical patent/JPS5427220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Debugging And Monitoring (AREA)

Abstract

PURPOSE:Regarding memory element including defect bit whose refreshing time is under the prescribed value, for column including defect bit, its refreshing cycle time is particularly shortened so as to use the defect bit like normal one.
JP50051375A 1975-04-30 1975-04-30 Semiconductor memory compensating defect bit Granted JPS51127629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50051375A JPS51127629A (en) 1975-04-30 1975-04-30 Semiconductor memory compensating defect bit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50051375A JPS51127629A (en) 1975-04-30 1975-04-30 Semiconductor memory compensating defect bit

Publications (2)

Publication Number Publication Date
JPS51127629A true JPS51127629A (en) 1976-11-06
JPS5427220B2 JPS5427220B2 (en) 1979-09-08

Family

ID=12885188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50051375A Granted JPS51127629A (en) 1975-04-30 1975-04-30 Semiconductor memory compensating defect bit

Country Status (1)

Country Link
JP (1) JPS51127629A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61217988A (en) * 1985-03-25 1986-09-27 Hitachi Ltd Dynamic type ram
US5629898A (en) * 1995-03-03 1997-05-13 Hitachi, Ltd. Dynamic memory device, a memory module, and a method of refreshing a dynamic memory device
JP2014022033A (en) * 2012-07-12 2014-02-03 Samsung Electronics Co Ltd Semiconductor memory device that controls refresh period, memory system and operating method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61217988A (en) * 1985-03-25 1986-09-27 Hitachi Ltd Dynamic type ram
US5629898A (en) * 1995-03-03 1997-05-13 Hitachi, Ltd. Dynamic memory device, a memory module, and a method of refreshing a dynamic memory device
JP2014022033A (en) * 2012-07-12 2014-02-03 Samsung Electronics Co Ltd Semiconductor memory device that controls refresh period, memory system and operating method thereof

Also Published As

Publication number Publication date
JPS5427220B2 (en) 1979-09-08

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