JPS5232233A - Memory device - Google Patents

Memory device

Info

Publication number
JPS5232233A
JPS5232233A JP50106988A JP10698875A JPS5232233A JP S5232233 A JPS5232233 A JP S5232233A JP 50106988 A JP50106988 A JP 50106988A JP 10698875 A JP10698875 A JP 10698875A JP S5232233 A JPS5232233 A JP S5232233A
Authority
JP
Japan
Prior art keywords
memory device
refresh
memory
write
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50106988A
Other languages
Japanese (ja)
Inventor
Masao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50106988A priority Critical patent/JPS5232233A/en
Publication of JPS5232233A publication Critical patent/JPS5232233A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve the capacity of memory by means of reduction of refresh times, making use of the same effect of the ordinary read/write as the refresh.
JP50106988A 1975-09-05 1975-09-05 Memory device Pending JPS5232233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50106988A JPS5232233A (en) 1975-09-05 1975-09-05 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50106988A JPS5232233A (en) 1975-09-05 1975-09-05 Memory device

Publications (1)

Publication Number Publication Date
JPS5232233A true JPS5232233A (en) 1977-03-11

Family

ID=14447618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50106988A Pending JPS5232233A (en) 1975-09-05 1975-09-05 Memory device

Country Status (1)

Country Link
JP (1) JPS5232233A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4975042A (en) * 1972-10-19 1974-07-19
JPS5217730A (en) * 1975-07-31 1977-02-09 Nippon Telegr & Teleph Corp <Ntt> Memory refresh control system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4975042A (en) * 1972-10-19 1974-07-19
JPS5217730A (en) * 1975-07-31 1977-02-09 Nippon Telegr & Teleph Corp <Ntt> Memory refresh control system

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