HK47990A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- HK47990A HK47990A HK479/90A HK47990A HK47990A HK 47990 A HK47990 A HK 47990A HK 479/90 A HK479/90 A HK 479/90A HK 47990 A HK47990 A HK 47990A HK 47990 A HK47990 A HK 47990A
- Authority
- HK
- Hong Kong
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58241965A JPH0682801B2 (ja) | 1983-12-23 | 1983-12-23 | 半導体記憶装置とそのレイアウト方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK47990A true HK47990A (en) | 1990-06-29 |
Family
ID=17082208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK479/90A HK47990A (en) | 1983-12-23 | 1990-06-21 | Semiconductor integrated circuit device |
Country Status (7)
Country | Link |
---|---|
US (2) | US4709351A (xx) |
JP (1) | JPH0682801B2 (xx) |
KR (1) | KR930000761B1 (xx) |
DE (1) | DE3447722A1 (xx) |
GB (1) | GB2152752B (xx) |
HK (1) | HK47990A (xx) |
IT (1) | IT1179531B (xx) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0740602B2 (ja) * | 1985-09-25 | 1995-05-01 | セイコーエプソン株式会社 | 半導体記憶装置 |
US4829351A (en) * | 1987-03-16 | 1989-05-09 | Motorola, Inc. | Polysilicon pattern for a floating gate memory |
US4992981A (en) * | 1987-06-05 | 1991-02-12 | International Business Machines Corporation | Double-ended memory cell array using interleaved bit lines and method of fabrication therefore |
US5204842A (en) * | 1987-08-05 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory with memory unit comprising a plurality of memory blocks |
US5014242A (en) * | 1987-12-10 | 1991-05-07 | Hitachi, Ltd. | Semiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuit |
JP2790287B2 (ja) * | 1988-08-12 | 1998-08-27 | 株式会社東芝 | 集積回路の配置構造 |
DE68928589T2 (de) * | 1988-10-28 | 1998-08-13 | Texas Instruments Inc | Speicheranordnung |
US5117389A (en) * | 1990-09-05 | 1992-05-26 | Macronix International Co., Ltd. | Flat-cell read-only-memory integrated circuit |
JP3242101B2 (ja) * | 1990-10-05 | 2001-12-25 | 三菱電機株式会社 | 半導体集積回路 |
US5200355A (en) * | 1990-12-10 | 1993-04-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a mask read only memory device |
US5396100A (en) * | 1991-04-05 | 1995-03-07 | Hitachi, Ltd. | Semiconductor integrated circuit device having a compact arrangement of SRAM cells |
JP3186084B2 (ja) * | 1991-05-24 | 2001-07-11 | 日本電気株式会社 | 半導体メモリー装置 |
JP3333352B2 (ja) * | 1995-04-12 | 2002-10-15 | 株式会社東芝 | 半導体記憶装置 |
US6388314B1 (en) * | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
US5640338A (en) * | 1995-12-07 | 1997-06-17 | Hyundai Electronics Industries Co. Ltd. | Semiconductor memory device |
KR100224779B1 (ko) * | 1996-12-31 | 1999-10-15 | 김영환 | 로오 디코더 회로 |
US5903491A (en) * | 1997-06-09 | 1999-05-11 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
JPH1126604A (ja) * | 1997-07-03 | 1999-01-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3408466B2 (ja) * | 1999-08-23 | 2003-05-19 | エヌイーシーマイクロシステム株式会社 | 半導体記憶装置 |
JP2002270788A (ja) * | 2001-03-14 | 2002-09-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6738301B2 (en) | 2002-08-29 | 2004-05-18 | Micron Technology, Inc. | Method and system for accelerating coupling of digital signals |
JP2011242541A (ja) * | 2010-05-17 | 2011-12-01 | Panasonic Corp | 半導体集積回路装置、および標準セルの端子構造 |
KR20120033510A (ko) * | 2010-09-30 | 2012-04-09 | 주식회사 하이닉스반도체 | 반도체 집적 회로 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3560940A (en) * | 1968-07-15 | 1971-02-02 | Ibm | Time shared interconnection apparatus |
JPS5854654A (ja) * | 1981-09-28 | 1983-03-31 | Nec Corp | 半導体集積回路装置 |
JPS602781B2 (ja) * | 1982-03-03 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
US4618945A (en) * | 1982-08-11 | 1986-10-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
-
1983
- 1983-12-23 JP JP58241965A patent/JPH0682801B2/ja not_active Expired - Lifetime
-
1984
- 1984-12-12 GB GB08431412A patent/GB2152752B/en not_active Expired
- 1984-12-17 KR KR1019840008023A patent/KR930000761B1/ko not_active IP Right Cessation
- 1984-12-21 DE DE19843447722 patent/DE3447722A1/de not_active Ceased
- 1984-12-21 IT IT24228/84A patent/IT1179531B/it active
- 1984-12-24 US US06/685,398 patent/US4709351A/en not_active Ceased
-
1990
- 1990-06-21 HK HK479/90A patent/HK47990A/xx not_active IP Right Cessation
-
1997
- 1997-12-31 US US09/002,002 patent/USRE36813E/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR930000761B1 (ko) | 1993-02-01 |
JPS60134460A (ja) | 1985-07-17 |
IT1179531B (it) | 1987-09-16 |
KR850004877A (ko) | 1985-07-27 |
USRE36813E (en) | 2000-08-08 |
DE3447722A1 (de) | 1985-07-04 |
JPH0682801B2 (ja) | 1994-10-19 |
IT8424228A0 (it) | 1984-12-21 |
GB2152752A (en) | 1985-08-07 |
GB8431412D0 (en) | 1985-01-23 |
GB2152752B (en) | 1988-03-02 |
US4709351A (en) | 1987-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |