HK1252938A1 - 具有到多個有源層中的選擇性載流子注入的發光結構 - Google Patents

具有到多個有源層中的選擇性載流子注入的發光結構

Info

Publication number
HK1252938A1
HK1252938A1 HK18112293.9A HK18112293A HK1252938A1 HK 1252938 A1 HK1252938 A1 HK 1252938A1 HK 18112293 A HK18112293 A HK 18112293A HK 1252938 A1 HK1252938 A1 HK 1252938A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting structure
active layers
carrier injection
multiple active
Prior art date
Application number
HK18112293.9A
Other languages
English (en)
Inventor
Hussein S El-Ghoroury
Mikhail V Kisin
Yea-Chuan Milton Yeh
Chih-Li Chuang
Jyh-Chia Chen
Original Assignee
Ostendo Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ostendo Technologies Inc filed Critical Ostendo Technologies Inc
Publication of HK1252938A1 publication Critical patent/HK1252938A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
HK18112293.9A 2015-06-05 2018-09-26 具有到多個有源層中的選擇性載流子注入的發光結構 HK1252938A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562171536P 2015-06-05 2015-06-05
US201662275650P 2016-01-06 2016-01-06
US201662290607P 2016-02-03 2016-02-03

Publications (1)

Publication Number Publication Date
HK1252938A1 true HK1252938A1 (zh) 2019-06-06

Family

ID=57442085

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18112293.9A HK1252938A1 (zh) 2015-06-05 2018-09-26 具有到多個有源層中的選擇性載流子注入的發光結構

Country Status (8)

Country Link
US (9) US20160359086A1 (zh)
EP (1) EP3329563A1 (zh)
JP (3) JP2018516466A (zh)
KR (2) KR102390624B1 (zh)
CN (2) CN107851968B (zh)
HK (1) HK1252938A1 (zh)
TW (1) TW201724553A (zh)
WO (1) WO2016197062A1 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018516466A (ja) 2015-06-05 2018-06-21 オステンド・テクノロジーズ・インコーポレーテッド 多重活性層へのキャリア注入を選定した発光構造
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
DE102016117477A1 (de) * 2016-09-16 2018-03-22 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge
US10964862B2 (en) * 2016-09-30 2021-03-30 Sensor Electronic Technology, Inc. Semiconductor heterostructure with multiple active regions
CN107645123B (zh) * 2017-09-27 2020-02-18 华东师范大学 一种多波长GaN基垂直腔面发射激光器的有源区结构设计
FR3075464A1 (fr) * 2017-12-15 2019-06-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diodes electroluminescentes
US11538963B1 (en) * 2018-02-20 2022-12-27 Ostendo Technologies, Inc. III-V light emitting device having low Si—H bonding dielectric layers for improved P-side contact performance
US10297714B1 (en) * 2018-04-05 2019-05-21 Wisconsin Alumni Research Foundation Heterogeneous tunneling junctions for hole injection in nitride based light-emitting devices
EP3788655A4 (en) * 2018-04-30 2022-01-26 Ostendo Technologies, Inc. QUANTUM PHOTONIC IMAGING SOLID-STATE COLOR-TUNABLE LIGHT-emitting micropixels
US10371325B1 (en) 2018-06-25 2019-08-06 Intematix Corporation Full spectrum white light emitting devices
US10685941B1 (en) 2019-07-09 2020-06-16 Intematix Corporation Full spectrum white light emitting devices
CN109273566B (zh) * 2018-08-01 2020-05-05 太原理工大学 一种含有应变调制结构的多层InGaN量子点结构
CN109461800A (zh) * 2018-10-16 2019-03-12 太原理工大学 一种具有应变补偿结构的InGaN量子点LED外延结构
US10943532B2 (en) 2018-12-11 2021-03-09 The Hong Kong University Of Science And Technology Monolithic full-color light-emitting diode display panel
CN109768135B (zh) * 2018-12-27 2020-06-19 武汉大学 全色堆栈式倒装RGB Micro-LED芯片阵列及其制备方法
TWI676263B (zh) * 2018-12-28 2019-11-01 光鋐科技股份有限公司 多波長發光二極體磊晶結構
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
EP3977517A4 (en) * 2019-06-03 2023-07-19 Moutanabbir, Oussama QUANTUM HETEROSTSTRUCTURES, RELATED DEVICES AND PROCESSES FOR THEIR MANUFACTURE
US11887973B2 (en) 2019-07-09 2024-01-30 Intematix Corporation Full spectrum white light emitting devices
CN110518100A (zh) * 2019-08-28 2019-11-29 映瑞光电科技(上海)有限公司 GaN基发光二极管外延结构及其制备方法
KR102273917B1 (ko) 2019-10-15 2021-07-07 주식회사 썬다이오드코리아 마이크로 디스플레이의 화소 및 이의 제조방법
EP4104213A4 (en) * 2020-02-10 2024-03-13 Google LLC DISPLAY DEVICE AND ASSOCIATED METHOD
CN115036400A (zh) * 2020-03-09 2022-09-09 厦门市三安光电科技有限公司 一种微发光二极管外延结构及其制备方法
KR102469704B1 (ko) * 2020-04-23 2022-11-22 주식회사 썬다이오드코리아 경사진 측면을 가지는 마이크로 디스플레이의 화소
WO2021243178A1 (en) * 2020-05-28 2021-12-02 The Regents Of The University Of California Iii-nitride led with uv emission by auger carrier injection
US11264535B1 (en) * 2020-08-12 2022-03-01 Jyh-Chia Chen Pixel device and display using a monolithic blue/green LED combined with red luminescence materials
US11600656B2 (en) * 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
TWI827064B (zh) * 2021-07-27 2023-12-21 大陸商重慶康佳光電技術研究院有限公司 Led外延結構及其製造方法、led器件
EP4378010A1 (en) * 2021-07-28 2024-06-05 Poro Technologies Ltd Variable-wavelength light emitting diode, display device with the same, method of controlling said led, and method of manufacturing a variable-wavelength led
EP4447134A1 (en) * 2021-12-10 2024-10-16 Seoul Viosys Co., Ltd. Light-emitting diode and light-emitting element having same
PL440375A1 (pl) 2022-02-12 2023-08-14 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Dioda elektroluminescencyjna o zmiennej barwie emisji i sposób wytwarzania takiej diody
JP7466084B2 (ja) * 2022-02-16 2024-04-12 日亜化学工業株式会社 発光素子
EP4180498B1 (en) * 2022-06-15 2024-06-05 Avantama AG A color conversion film comprising inorganic separation layer

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839899A (en) * 1988-03-09 1989-06-13 Xerox Corporation Wavelength tuning of multiple quantum well (MQW) heterostructure lasers
JPH04350988A (ja) * 1991-05-29 1992-12-04 Nec Kansai Ltd 量子井戸構造発光素子
US5422898A (en) 1993-10-29 1995-06-06 International Business Machines Corporation Tapered Fabry-Perot multi-wavelength optical source
US5386428A (en) 1993-11-02 1995-01-31 Xerox Corporation Stacked active region laser array for multicolor emissions
US5737353A (en) * 1993-11-26 1998-04-07 Nec Corporation Multiquantum-well semiconductor laser
JP2682474B2 (ja) * 1993-11-26 1997-11-26 日本電気株式会社 半導体レーザ装置
JP2596709B2 (ja) * 1994-04-06 1997-04-02 都築 省吾 半導体レーザ素子を用いた照明用光源装置
JP2991616B2 (ja) * 1994-06-30 1999-12-20 シャープ株式会社 半導体発光素子
JPH08316588A (ja) 1995-05-23 1996-11-29 Furukawa Electric Co Ltd:The 歪量子井戸構造を有する半導体光素子
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
TW412889B (en) 1997-09-24 2000-11-21 Nippon Oxygen Co Ltd Semiconductor laser
US6229152B1 (en) 1999-02-18 2001-05-08 The Trustees Of Princeton University Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation
CN1347581A (zh) 1999-03-26 2002-05-01 松下电器产业株式会社 带有应变补偿层的半导体结构及其制备方法
US7202506B1 (en) 1999-11-19 2007-04-10 Cree, Inc. Multi element, multi color solid state LED/laser
US6469358B1 (en) 2000-09-21 2002-10-22 Lockheed Martin Corporation Three color quantum well focal plane arrays
JP2002176198A (ja) 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US7095051B2 (en) 2001-03-28 2006-08-22 Nichia Corporation Nitride semiconductor element
JP2004146498A (ja) 2002-10-23 2004-05-20 Stanley Electric Co Ltd 半導体発光装置
WO2003041234A1 (en) 2001-11-05 2003-05-15 Nichia Corporation Semiconductor element
CA2427559A1 (en) 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
JP4284946B2 (ja) * 2002-08-27 2009-06-24 ソニー株式会社 窒化物系半導体発光素子
US7058105B2 (en) 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
US6927412B2 (en) * 2002-11-21 2005-08-09 Ricoh Company, Ltd. Semiconductor light emitter
US20040161006A1 (en) 2003-02-18 2004-08-19 Ying-Lan Chang Method and apparatus for improving wavelength stability for InGaAsN devices
JP4412918B2 (ja) * 2003-05-28 2010-02-10 シャープ株式会社 窒化物半導体発光素子及びその製造方法
US6919584B2 (en) 2003-06-19 2005-07-19 Harvatek Corporation White light source
KR100482511B1 (ko) * 2004-02-05 2005-04-14 에피밸리 주식회사 Ⅲ-질화물계 반도체 발광소자
US7323721B2 (en) * 2004-09-09 2008-01-29 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED
US8148713B2 (en) 2008-04-04 2012-04-03 The Regents Of The University Of California Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
KR100674858B1 (ko) * 2005-07-07 2007-01-29 삼성전기주식회사 백색 발광소자
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
KR20070080696A (ko) 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
KR100774200B1 (ko) 2006-04-13 2007-11-08 엘지전자 주식회사 유기 ｅｌ 소자 및 그 제조방법
US20070286250A1 (en) 2006-06-08 2007-12-13 Po-Hsun Lei Active layer of laser diode
US7593436B2 (en) 2006-06-16 2009-09-22 Vi Systems Gmbh Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
TWI338382B (en) 2006-11-29 2011-03-01 Univ Nat Taiwan Method and structure for manufacturing long-wavelength light-emitting diode using prestrain effect
KR100862497B1 (ko) * 2006-12-26 2008-10-08 삼성전기주식회사 질화물 반도체 소자
JP2008235606A (ja) * 2007-03-20 2008-10-02 Sony Corp 半導体発光素子、半導体発光素子の製造方法、バックライト、表示装置、電子機器および発光装置
KR101330898B1 (ko) * 2007-04-05 2013-11-18 엘지전자 주식회사 반도체 레이저 다이오드
US7649195B2 (en) 2007-06-12 2010-01-19 Seoul Opto Device Co., Ltd. Light emitting diode having active region of multi quantum well structure
US7623560B2 (en) 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
GB2456756A (en) * 2008-01-16 2009-07-29 Sharp Kk AlInGaN Light-Emitting devices
US20090191427A1 (en) 2008-01-30 2009-07-30 Liang-Sheng Liao Phosphorescent oled having double hole-blocking layers
JP4720834B2 (ja) 2008-02-25 2011-07-13 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ
JP2009224370A (ja) 2008-03-13 2009-10-01 Rohm Co Ltd 窒化物半導体デバイス
TW200950162A (en) 2008-04-04 2009-12-01 Univ California Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
US7902545B2 (en) * 2008-05-14 2011-03-08 Baker Hughes Incorporated Semiconductor for use in harsh environments
US20100006873A1 (en) 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20110133158A1 (en) 2008-08-19 2011-06-09 Lattice Power (Jiangxi) Corporation Method for fabricating ingan-based multi-quantum well layers
US8098265B2 (en) 2008-10-10 2012-01-17 Ostendo Technologies, Inc. Hierarchical multicolor primaries temporal multiplexing system
CN101459216B (zh) * 2008-12-29 2011-03-30 上海蓝光科技有限公司 一种非对称多量子阱结构的蓝光led及其制作方法
JP4775455B2 (ja) 2009-02-17 2011-09-21 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
US9153790B2 (en) 2009-05-22 2015-10-06 Idemitsu Kosan Co., Ltd. Organic electroluminescent device
US8314429B1 (en) * 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US9484197B2 (en) 2009-10-23 2016-11-01 The Royal Institution For The Advancement Of Learning/Mcgill University Lateral growth semiconductor method and devices
CN102668138B (zh) 2009-12-21 2015-06-10 株式会社东芝 氮化物半导体发光元件及其制造方法
TWI508621B (zh) * 2010-02-03 2015-11-11 Innolux Corp 影像顯示系統
US20110188528A1 (en) 2010-02-04 2011-08-04 Ostendo Technologies, Inc. High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
US8451877B1 (en) * 2010-03-23 2013-05-28 Sandia Corporation High efficiency III-nitride light-emitting diodes
US20110237011A1 (en) 2010-03-29 2011-09-29 Nanjing University Method for Forming a GaN-Based Quantum-Well LED with Red Light
CN102142492B (zh) * 2011-01-14 2013-01-09 映瑞光电科技(上海)有限公司 多量子阱结构及其制造方法、发光二极管
JP5372045B2 (ja) 2011-02-25 2013-12-18 株式会社東芝 半導体発光素子
JP5737111B2 (ja) * 2011-03-30 2015-06-17 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
WO2012170994A2 (en) 2011-06-10 2012-12-13 The Regents Of The University Of California Low droop light emitting diode structure on gallium nitride semipolar substrates
US8927958B2 (en) * 2011-07-12 2015-01-06 Epistar Corporation Light-emitting element with multiple light-emitting stacked layers
US9070613B2 (en) 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
KR20130028291A (ko) * 2011-09-09 2013-03-19 엘지이노텍 주식회사 발광소자 및 발광 소자 패키지
US8772791B2 (en) 2011-09-29 2014-07-08 Epistar Corporation Light-emitting device
KR20130078345A (ko) 2011-12-30 2013-07-10 일진엘이디(주) 스트레인 완충층을 이용하여 발광효율이 우수한 질화물계 발광소자
JP6136284B2 (ja) * 2012-03-13 2017-05-31 株式会社リコー 半導体積層体及び面発光レーザ素子
US9124062B2 (en) 2012-03-22 2015-09-01 Palo Alto Research Center Incorporated Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector
TWI502767B (zh) * 2012-06-13 2015-10-01 Lextar Electronics Corp 半導體發光結構
WO2014039721A1 (en) 2012-09-07 2014-03-13 Nitto Denko Corporation Top-emitting white organic light-emitting diodes having improved efficiency and stability
KR101936305B1 (ko) 2012-09-24 2019-01-08 엘지이노텍 주식회사 발광소자
JP2014067893A (ja) * 2012-09-26 2014-04-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US8890114B2 (en) 2012-10-16 2014-11-18 Epistar Corporation Light-emitting device
WO2014073583A1 (en) * 2012-11-06 2014-05-15 Canon Kabushiki Kaisha Photonic device and optical coherence tomography apparatus including the photonic device as light source
TWI511325B (zh) 2012-11-19 2015-12-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
US8941111B2 (en) 2012-12-21 2015-01-27 Invensas Corporation Non-crystalline inorganic light emitting diode
US11502219B2 (en) 2013-03-14 2022-11-15 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
US10839734B2 (en) 2013-12-23 2020-11-17 Universal Display Corporation OLED color tuning by driving mode variation
JP2018516466A (ja) 2015-06-05 2018-06-21 オステンド・テクノロジーズ・インコーポレーテッド 多重活性層へのキャリア注入を選定した発光構造
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same

Also Published As

Publication number Publication date
US20220123170A1 (en) 2022-04-21
KR20220058643A (ko) 2022-05-09
KR102390624B1 (ko) 2022-04-26
US20220262980A1 (en) 2022-08-18
CN107851968A (zh) 2018-03-27
JP2023078361A (ja) 2023-06-06
US9985174B2 (en) 2018-05-29
US11329191B1 (en) 2022-05-10
JP2018516466A (ja) 2018-06-21
US20160359300A1 (en) 2016-12-08
JP2021122059A (ja) 2021-08-26
US20160359084A1 (en) 2016-12-08
CN114640024A (zh) 2022-06-17
US11335829B2 (en) 2022-05-17
TW201724553A (zh) 2017-07-01
EP3329563A1 (en) 2018-06-06
US10418516B2 (en) 2019-09-17
US11063179B2 (en) 2021-07-13
US20210343900A1 (en) 2021-11-04
US20180323340A1 (en) 2018-11-08
US20160359299A1 (en) 2016-12-08
US20220123169A1 (en) 2022-04-21
CN107851968B (zh) 2022-04-01
WO2016197062A1 (en) 2016-12-08
KR20180015163A (ko) 2018-02-12
US20160359086A1 (en) 2016-12-08

Similar Documents

Publication Publication Date Title
HK1252938A1 (zh) 具有到多個有源層中的選擇性載流子注入的發光結構
EP3454372A4 (en) LIGHT-EMITTING DIODE
EP3439061A4 (en) LIGHT-EMITTING ITEM
KR102304715B9 (ko) 유기 발광 소자
EP2955763A4 (en) Nitride semiconductor light-emitting element
PL3113228T3 (pl) Urządzenie wyświetlające z organicznymi diodami elektroluminescencyjnymi
KR102500272B9 (ko) 화합물 및 이를 포함하는 유기 발광 소자
EP2946421A4 (en) ORGANIC LIGHT-EMITTING ELEMENT
ZA201607173B (en) Organic light emitting diode with surface modification layer
KR102430017B9 (ko) 헤테로고리 화합물 및 이를 이용한 유기 발광 소자
EP2955764A4 (en) LIGHT-EMITTING MODULE
PL2989373T3 (pl) Struktura optyczna, jednostka oświetleniowa i sposób wytwarzania
JP2014209603A5 (ja) 発光素子及び化合物
EP3006433A4 (en) COMPOUND, ORGANIC ELECTROLUMINESCENT ELEMENT COMPRISING THE COMPOUND AND DISPLAY DEVICE COMPRISING THE ORGANIC ELECTROLUMINESCENCE ELEMENT
EP3351576A4 (en) Polymer compound and light-emitting element with use thereof
FR3025858B1 (fr) Module lumineux avec diodes led et oled
EP2819182A4 (en) LIGHT-EMITTING SEMICONDUCTOR ELEMENT
PL3005439T3 (pl) Struktura organicznej diody elektroluminescencyjnej
EP3306684A4 (en) LIGHT-EMITTING MODULE
DE112014001884A5 (de) Lichtemittierendes Halbleiterbauelement
FR3003402B1 (fr) Dispositif monolithique emetteur de lumiere.
GB201600081D0 (en) Organic light emitting diode anode connection structure and manufacturing method thereof
EP2996169A4 (en) Organic light emitting diode
EP3389104A4 (en) LIGHT-EMITTING ITEM
EP3361521A4 (en) LIGHT-EMITTING ITEM