HK1219174A1 - 標記形成方法、標記檢測方法及器件製造方法 - Google Patents

標記形成方法、標記檢測方法及器件製造方法

Info

Publication number
HK1219174A1
HK1219174A1 HK16107167.4A HK16107167A HK1219174A1 HK 1219174 A1 HK1219174 A1 HK 1219174A1 HK 16107167 A HK16107167 A HK 16107167A HK 1219174 A1 HK1219174 A1 HK 1219174A1
Authority
HK
Hong Kong
Prior art keywords
mark
device manufacturing
mark detecting
mark forming
forming method
Prior art date
Application number
HK16107167.4A
Other languages
English (en)
Inventor
Yuji Shiba
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1219174A1 publication Critical patent/HK1219174A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
HK16107167.4A 2013-03-27 2016-06-21 標記形成方法、標記檢測方法及器件製造方法 HK1219174A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013067696 2013-03-27
PCT/JP2014/058393 WO2014157262A1 (ja) 2013-03-27 2014-03-25 マーク形成方法、マーク検出方法、及びデバイス製造方法

Publications (1)

Publication Number Publication Date
HK1219174A1 true HK1219174A1 (zh) 2017-03-24

Family

ID=51624228

Family Applications (2)

Application Number Title Priority Date Filing Date
HK16107167.4A HK1219174A1 (zh) 2013-03-27 2016-06-21 標記形成方法、標記檢測方法及器件製造方法
HK16108419.8A HK1220544A1 (zh) 2013-03-27 2016-07-17 標記形成方法、標記檢測方法及器件製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK16108419.8A HK1220544A1 (zh) 2013-03-27 2016-07-17 標記形成方法、標記檢測方法及器件製造方法

Country Status (8)

Country Link
US (2) US9972574B2 (zh)
EP (1) EP2980832A4 (zh)
JP (2) JP6269982B2 (zh)
KR (2) KR20190018560A (zh)
CN (1) CN105378892B (zh)
HK (2) HK1219174A1 (zh)
TW (1) TWI672788B (zh)
WO (1) WO2014157262A1 (zh)

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WO2017163438A1 (ja) * 2016-03-24 2017-09-28 東京エレクトロン株式会社 半導体装置の製造方法
WO2018181552A1 (ja) * 2017-03-31 2018-10-04 国立研究開発法人産業技術総合研究所 ウェハ上のアライメントマークを用いる半導体パッケージの製造方法
US10103166B1 (en) 2017-04-10 2018-10-16 Macronix International Co., Ltd. Semiconductor device and critical dimension defining method thereof
US10705435B2 (en) * 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
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JP2020041859A (ja) * 2018-09-07 2020-03-19 キオクシア株式会社 位置計測方法、位置計測装置および半導体装置の製造方法
KR102629290B1 (ko) 2018-12-13 2024-01-29 삼성디스플레이 주식회사 표시 장치 제조 방법
TW202027189A (zh) * 2019-01-07 2020-07-16 力晶積成電子製造股份有限公司 晶粒的標記方法、晶圓及晶粒
TWI699580B (zh) * 2019-03-07 2020-07-21 友達光電股份有限公司 陣列基板
CN113130340B (zh) * 2020-02-27 2024-02-20 台湾积体电路制造股份有限公司 叠对误差测量方法及叠对误差测量结构
CN111314391B (zh) * 2020-03-31 2022-03-08 四川九强通信科技有限公司 基于区块链的卫星网络安全路由方法
TWI736317B (zh) * 2020-06-12 2021-08-11 華邦電子股份有限公司 用於黃光製程的辨識方法與半導體元件

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Also Published As

Publication number Publication date
TWI672788B (zh) 2019-09-21
TW201508893A (zh) 2015-03-01
EP2980832A4 (en) 2017-03-01
US10354959B2 (en) 2019-07-16
EP2980832A1 (en) 2016-02-03
JP6269982B2 (ja) 2018-01-31
KR101951989B1 (ko) 2019-02-25
HK1220544A1 (zh) 2017-05-05
WO2014157262A1 (ja) 2014-10-02
CN105378892B (zh) 2018-05-08
US20180182713A1 (en) 2018-06-28
JP2018078321A (ja) 2018-05-17
KR20150136503A (ko) 2015-12-07
JP6687910B2 (ja) 2020-04-28
JPWO2014157262A1 (ja) 2017-02-16
US20160079179A1 (en) 2016-03-17
KR20190018560A (ko) 2019-02-22
US9972574B2 (en) 2018-05-15
CN105378892A (zh) 2016-03-02

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