HK1202993A1 - Field-effect transistor stack voltage compensation - Google Patents

Field-effect transistor stack voltage compensation

Info

Publication number
HK1202993A1
HK1202993A1 HK15103342.2A HK15103342A HK1202993A1 HK 1202993 A1 HK1202993 A1 HK 1202993A1 HK 15103342 A HK15103342 A HK 15103342A HK 1202993 A1 HK1202993 A1 HK 1202993A1
Authority
HK
Hong Kong
Prior art keywords
field
effect transistor
voltage compensation
stack voltage
transistor stack
Prior art date
Application number
HK15103342.2A
Other languages
English (en)
Chinese (zh)
Inventor
‧朱
‧懷特菲爾德
‧羅伊
‧布林
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of HK1202993A1 publication Critical patent/HK1202993A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15182—Fan-in arrangement of the internal vias
    • H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)
HK15103342.2A 2013-08-07 2015-04-02 Field-effect transistor stack voltage compensation HK1202993A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361863043P 2013-08-07 2013-08-07
US14/451,321 US9721936B2 (en) 2013-08-07 2014-08-04 Field-effect transistor stack voltage compensation

Publications (1)

Publication Number Publication Date
HK1202993A1 true HK1202993A1 (en) 2015-10-09

Family

ID=52447922

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15103342.2A HK1202993A1 (en) 2013-08-07 2015-04-02 Field-effect transistor stack voltage compensation

Country Status (6)

Country Link
US (3) US9721936B2 (xx)
JP (3) JP6482786B2 (xx)
KR (1) KR102258363B1 (xx)
CN (1) CN104426510B (xx)
HK (1) HK1202993A1 (xx)
TW (1) TWI652797B (xx)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721936B2 (en) * 2013-08-07 2017-08-01 Skyworks Solutions, Inc. Field-effect transistor stack voltage compensation
US11901243B2 (en) * 2013-11-12 2024-02-13 Skyworks Solutions, Inc. Methods related to radio-frequency switching devices having improved voltage handling capability
US9837324B2 (en) 2013-11-12 2017-12-05 Skyworks Solutions, Inc. Devices and methods related to radio-frequency switches having improved on-resistance performance
US9443696B2 (en) * 2014-05-25 2016-09-13 Kla-Tencor Corporation Electron beam imaging with dual Wien-filter monochromator
US9595942B2 (en) * 2015-03-30 2017-03-14 Tdk Corporation MOS capacitors with interleaved fingers and methods of forming the same
US9590120B2 (en) * 2015-03-30 2017-03-07 Tdk Corporation MOS capacitors structures for variable capacitor arrays and methods of forming the same
US10073482B2 (en) 2015-03-30 2018-09-11 Tdk Corporation Apparatus and methods for MOS capacitor structures for variable capacitor arrays
US9590593B2 (en) * 2015-03-30 2017-03-07 Tdk Corporation MOS capacitors with head-to-head fingers and methods of forming the same
US10042376B2 (en) 2015-03-30 2018-08-07 Tdk Corporation MOS capacitors for variable capacitor arrays and methods of forming the same
US9595621B2 (en) * 2015-03-30 2017-03-14 Tdk Corporation MOS capacitors flow type devices and methods of forming the same
US9780090B2 (en) * 2015-10-19 2017-10-03 Nxp Usa, Inc. Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication
KR102427185B1 (ko) 2015-12-09 2022-08-01 삼성전자 주식회사 스위치 운용 방법 및 이를 지원하는 전자 장치
US10847445B2 (en) * 2016-03-31 2020-11-24 Skyworks Solutions, Inc. Non-symmetric body contacts for field-effect transistors
US10361697B2 (en) * 2016-12-23 2019-07-23 Skyworks Solutions, Inc. Switch linearization by compensation of a field-effect transistor
CN108736866B (zh) * 2017-04-24 2021-12-28 深圳市中兴微电子技术有限公司 一种cmos soi射频开关电路
JP6757502B2 (ja) * 2017-06-07 2020-09-23 株式会社村田製作所 双方向スイッチ回路及びスイッチ装置
CN107395174A (zh) * 2017-08-31 2017-11-24 广东工业大学 一种射频开关的堆叠电路及射频开关
JP6824134B2 (ja) * 2017-09-29 2021-02-03 日本電信電話株式会社 可変帯域増幅器
US10637411B2 (en) 2017-10-06 2020-04-28 Qualcomm Incorporated Transistor layout for improved harmonic performance
US10672885B2 (en) * 2017-10-19 2020-06-02 Newport Fab, Llc Silicide block isolation for reducing off-capacitance of a radio frequency (RF) switch
US10700063B2 (en) * 2017-12-31 2020-06-30 Skyworks Solutions, Inc. Devices and methods for layout-dependent voltage handling improvement in switch stacks
US10325833B1 (en) 2018-02-20 2019-06-18 Newport Fab, Llc Bent polysilicon gate structure for small footprint radio frequency (RF) switch
US10586870B2 (en) 2018-02-20 2020-03-10 Newport Fab, Llc Wide contact structure for small footprint radio frequency (RF) switch
US10817644B2 (en) * 2018-10-19 2020-10-27 Globalfoundries Singapore Pte. Ltd. Circuit and method for design of RF integrated circuits for process control monitoring
US11804435B2 (en) 2020-01-03 2023-10-31 Skyworks Solutions, Inc. Semiconductor-on-insulator transistor layout for radio frequency power amplifiers
US11595008B2 (en) 2020-01-09 2023-02-28 Skyworks Solutions, Inc. Low noise amplifiers with low noise figure
US11316550B2 (en) 2020-01-15 2022-04-26 Skyworks Solutions, Inc. Biasing of cascode power amplifiers for multiple power supply domains
US12027461B2 (en) * 2020-05-13 2024-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including buried conductive fingers and method of making the same
CN111900970B (zh) * 2020-07-14 2024-04-23 上海华虹宏力半导体制造有限公司 一种天线调谐开关及提高其峰值电压的方法
US11817829B2 (en) 2021-01-29 2023-11-14 Skyworks Solutions, Inc. Multi-mode broadband low noise amplifier
KR20220153834A (ko) * 2021-05-12 2022-11-21 주식회사 디비하이텍 알에프 스위치 소자
CN116632000B (zh) * 2023-05-25 2024-01-23 合芯科技(苏州)有限公司 一种电荷均匀分布的场效应管版图结构及其设计方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962341A (en) * 1988-02-02 1990-10-09 Schoeff John A Low voltage non-saturating logic circuit technology
US6642578B1 (en) * 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
JP4024762B2 (ja) * 2004-01-16 2007-12-19 ユーディナデバイス株式会社 高周波スイッチ
JP2006332778A (ja) * 2005-05-23 2006-12-07 Matsushita Electric Ind Co Ltd 高周波スイッチ回路およびこれを用いた半導体装置
JP2007259112A (ja) * 2006-03-23 2007-10-04 Matsushita Electric Ind Co Ltd 高周波スイッチ回路および半導体装置
JP4811155B2 (ja) * 2006-06-30 2011-11-09 ソニー株式会社 半導体スイッチ回路並びに通信機器
US20080157222A1 (en) * 2006-12-27 2008-07-03 Mediatek Inc. Rf integrated circuit device
US7960772B2 (en) * 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
JP2009117445A (ja) * 2007-11-02 2009-05-28 Toshiba Corp 半導体装置
WO2011014206A1 (en) * 2009-07-28 2011-02-03 Skyworks Solutions, Inc. Process, voltage, and temperature sensor
US8432016B1 (en) * 2009-07-29 2013-04-30 Rf Micro Devices, Inc. Stacked body-contacted field effect transistor
JP5706103B2 (ja) * 2010-05-25 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
US8896034B1 (en) * 2010-08-11 2014-11-25 Sarda Technologies, Inc. Radio frequency and microwave devices and methods of use
WO2012098897A1 (ja) * 2011-01-20 2012-07-26 パナソニック株式会社 不揮発性ラッチ回路および不揮発性フリップフロップ回路
TWI430125B (zh) * 2011-01-31 2014-03-11 Univ Nat Chiao Tung 半導體元件之參數萃取方法
JP5763485B2 (ja) * 2011-09-16 2015-08-12 ルネサスエレクトロニクス株式会社 アンテナスイッチ及び通信装置
KR101962585B1 (ko) * 2011-11-09 2019-03-26 스카이워크스 솔루션즈, 인코포레이티드 전계 효과 트랜지스터 구조 및 관련된 무선-주파수 스위치
US20130134018A1 (en) * 2011-11-30 2013-05-30 General Electric Company Micro-electromechanical switch and a related method thereof
US8759939B2 (en) * 2012-01-31 2014-06-24 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
US8869085B2 (en) * 2012-10-11 2014-10-21 International Business Machines Corporation Multi-finger transistor layout for reducing cross-finger electric variations and for fully utilizing available breakdown voltages
US9721936B2 (en) * 2013-08-07 2017-08-01 Skyworks Solutions, Inc. Field-effect transistor stack voltage compensation

Also Published As

Publication number Publication date
US9721936B2 (en) 2017-08-01
TW201515191A (zh) 2015-04-16
CN104426510B (zh) 2019-10-22
KR20150017688A (ko) 2015-02-17
US10229902B2 (en) 2019-03-12
JP6559918B2 (ja) 2019-08-14
TWI652797B (zh) 2019-03-01
JP2019080080A (ja) 2019-05-23
US20150041917A1 (en) 2015-02-12
US20180047715A1 (en) 2018-02-15
JP6482786B2 (ja) 2019-03-13
US20190273076A1 (en) 2019-09-05
CN104426510A (zh) 2015-03-18
JP2015035603A (ja) 2015-02-19
JP2020017725A (ja) 2020-01-30
JP6963590B2 (ja) 2021-11-10
US10840233B2 (en) 2020-11-17
KR102258363B1 (ko) 2021-05-31

Similar Documents

Publication Publication Date Title
HK1202993A1 (en) Field-effect transistor stack voltage compensation
IL273299A (en) Electrode structure for a field effect transistor
GB201308190D0 (en) High performance voltage compensation
TWI560877B (en) Recessed field plate transistor structures
TWI562383B (en) Bipolar thin film transistor
GB2506558B (en) Tunnel field-effect transistor
GB2497175B (en) Field-effect transistor device
EP2992559A4 (en) Resurf iii-n high electron mobility transistor
EP2975649A4 (en) FIELD EFFECT TRANSISTOR
EP3087603A4 (en) High mobility transistors
GB2521703B (en) Voltage regulator
EP2860762A4 (en) JUNCTION FIELD EFFECT TRANSISTOR FOR HIGH VOLTAGE
HK1208558A1 (en) Amplifier voltage limiting using punch-through effect
EP3089216A4 (en) Split-gate power semiconductor field-effect transistor
EP3012706A4 (en) Voltage regulator
EP2822038A4 (en) BIPOLAR TRANSISTOR WITH INSULATED GATE
SG10201503305PA (en) Lateral high voltage transistor
GB2511541B (en) Field effect transistor device
EP2980875A4 (en) ORGANIC THIN-LAYER TRANSISTOR
PL3117465T3 (pl) Heterozłączowy tranzystor polowy
HK1221820A1 (zh) 晶體管
GB2536585B (en) Transistors with higher switching than nominal voltages
EP3062351A4 (en) Field-effect transistor
GB2521138B (en) Source/Drain Conductors for Transistor Devices
GB201315581D0 (en) Communucation between voltage domains