HK1159703A1 - 利用氫化物氣相外延 生長平面非極性的 面和半極性的 氮化鎵 - Google Patents
利用氫化物氣相外延 生長平面非極性的 面和半極性的 氮化鎵Info
- Publication number
- HK1159703A1 HK1159703A1 HK11111943.2A HK11111943A HK1159703A1 HK 1159703 A1 HK1159703 A1 HK 1159703A1 HK 11111943 A HK11111943 A HK 11111943A HK 1159703 A1 HK1159703 A1 HK 1159703A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- hvpe
- polar
- semi
- growth
- plane
- Prior art date
Links
- 229910002601 GaN Inorganic materials 0.000 title 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8114508P | 2008-07-16 | 2008-07-16 | |
US12/503,656 US8673074B2 (en) | 2008-07-16 | 2009-07-15 | Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
PCT/US2009/050867 WO2010009325A2 (en) | 2008-07-16 | 2009-07-16 | Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe) |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1159703A1 true HK1159703A1 (zh) | 2012-08-03 |
Family
ID=41529507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11111943.2A HK1159703A1 (zh) | 2008-07-16 | 2011-11-04 | 利用氫化物氣相外延 生長平面非極性的 面和半極性的 氮化鎵 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8673074B2 (zh) |
EP (1) | EP2313543B1 (zh) |
JP (1) | JP5526129B2 (zh) |
KR (1) | KR101650752B1 (zh) |
CN (1) | CN102119243B (zh) |
HK (1) | HK1159703A1 (zh) |
WO (1) | WO2010009325A2 (zh) |
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CN101901758B (zh) * | 2010-06-24 | 2012-05-23 | 西安电子科技大学 | 基于m面SiC衬底的非极性m面GaN薄膜的MOCVD生长方法 |
KR101105868B1 (ko) | 2010-11-08 | 2012-01-16 | 한국광기술원 | 화학적 리프트 오프 방법을 이용한 ⅰⅰⅰ족 질화물 기판의 제조방법 |
CN102146585A (zh) * | 2011-01-04 | 2011-08-10 | 武汉华炬光电有限公司 | 非极性面GaN外延片及其制备方法 |
US8778783B2 (en) | 2011-05-20 | 2014-07-15 | Applied Materials, Inc. | Methods for improved growth of group III nitride buffer layers |
US8980002B2 (en) | 2011-05-20 | 2015-03-17 | Applied Materials, Inc. | Methods for improved growth of group III nitride semiconductor compounds |
US8853086B2 (en) | 2011-05-20 | 2014-10-07 | Applied Materials, Inc. | Methods for pretreatment of group III-nitride depositions |
US20130026480A1 (en) | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
US10435812B2 (en) | 2012-02-17 | 2019-10-08 | Yale University | Heterogeneous material integration through guided lateral growth |
US8728938B2 (en) | 2012-06-13 | 2014-05-20 | Ostendo Technologies, Inc. | Method for substrate pretreatment to achieve high-quality III-nitride epitaxy |
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CN106233429B (zh) * | 2014-04-16 | 2019-06-18 | 耶鲁大学 | 获得平坦的半极性氮化镓表面的方法 |
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US11287563B2 (en) | 2016-12-01 | 2022-03-29 | Ostendo Technologies, Inc. | Polarized light emission from micro-pixel displays and methods of fabrication thereof |
CN106816362B (zh) * | 2017-01-12 | 2019-12-31 | 西安电子科技大学 | 基于c面Al2O3图形衬底的AlN薄膜及其制备方法 |
CN106816363B (zh) * | 2017-01-12 | 2019-12-31 | 西安电子科技大学 | 基于m面Al2O3图形衬底的半极性AlN薄膜及其制备方法 |
CN106856162B (zh) * | 2017-01-12 | 2019-12-31 | 西安电子科技大学 | 基于r面Al2O3图形衬底的非极性a面AlN薄膜及其制备方法 |
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CN109285922A (zh) * | 2018-09-09 | 2019-01-29 | 复旦大学 | 一种双波段长波长发光铟镓氮量子阱外延片及其制备方法 |
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CN109881157B (zh) * | 2019-03-19 | 2020-12-22 | 南京航空航天大学 | 一种周期性调控二氧化钒薄膜相变性质的方法 |
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US8148244B2 (en) * | 2005-07-13 | 2012-04-03 | The Regents Of The University Of California | Lateral growth method for defect reduction of semipolar nitride films |
KR101347848B1 (ko) * | 2005-09-09 | 2014-01-06 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | 유기금속 화학기상증착법을 통한 반극성(Al,In,Ga,B)N의 성장강화방법 |
KR20080098039A (ko) * | 2006-01-20 | 2008-11-06 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 금속유기 화학 기상 증착을 통한 준극성 (Al,In,Ga,B)N의 성장을 향상시키기 위한 방법 |
JP5896442B2 (ja) * | 2006-01-20 | 2016-03-30 | 国立研究開発法人科学技術振興機構 | Iii族窒化物膜の成長方法 |
EP1984545A4 (en) * | 2006-02-17 | 2013-05-15 | Univ California | PROCESS FOR THE PRODUCTION OF N-TYPE SEMIPOLAR OPTOELECTRONIC DEVICES (AL, IN, GA, B) |
US7727333B1 (en) * | 2006-03-27 | 2010-06-01 | Technologies And Devices International, Inc. | HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby |
JP5332168B2 (ja) | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物結晶の製造方法 |
JP4462289B2 (ja) * | 2007-05-18 | 2010-05-12 | ソニー株式会社 | 半導体層の成長方法および半導体発光素子の製造方法 |
JP4935700B2 (ja) * | 2008-02-01 | 2012-05-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、ウエハ、iii族窒化物系化合物半導体素子 |
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2009
- 2009-07-15 US US12/503,656 patent/US8673074B2/en active Active
- 2009-07-16 JP JP2011518917A patent/JP5526129B2/ja not_active Expired - Fee Related
- 2009-07-16 KR KR1020117003510A patent/KR101650752B1/ko active IP Right Grant
- 2009-07-16 WO PCT/US2009/050867 patent/WO2010009325A2/en active Application Filing
- 2009-07-16 CN CN200980127776.7A patent/CN102119243B/zh active Active
- 2009-07-16 EP EP09790542.6A patent/EP2313543B1/en not_active Not-in-force
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Also Published As
Publication number | Publication date |
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KR20110043669A (ko) | 2011-04-27 |
US20100012948A1 (en) | 2010-01-21 |
WO2010009325A2 (en) | 2010-01-21 |
CN102119243A (zh) | 2011-07-06 |
KR101650752B1 (ko) | 2016-08-24 |
US8673074B2 (en) | 2014-03-18 |
JP5526129B2 (ja) | 2014-06-18 |
WO2010009325A3 (en) | 2010-03-11 |
EP2313543A2 (en) | 2011-04-27 |
JP2011528318A (ja) | 2011-11-17 |
EP2313543B1 (en) | 2013-05-29 |
CN102119243B (zh) | 2014-06-25 |
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