HK1132768A1 - Method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices - Google Patents
Method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devicesInfo
- Publication number
- HK1132768A1 HK1132768A1 HK09110639.7A HK09110639A HK1132768A1 HK 1132768 A1 HK1132768 A1 HK 1132768A1 HK 09110639 A HK09110639 A HK 09110639A HK 1132768 A1 HK1132768 A1 HK 1132768A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- fabrication
- filling
- compositions
- semiconductor devices
- copper plating
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77467506P | 2006-02-21 | 2006-02-21 | |
PCT/EP2007/051681 WO2007096390A1 (en) | 2006-02-21 | 2007-02-21 | Method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1132768A1 true HK1132768A1 (en) | 2010-03-05 |
Family
ID=38038534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK09110639.7A HK1132768A1 (en) | 2006-02-21 | 2009-11-13 | Method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices |
Country Status (10)
Country | Link |
---|---|
US (1) | US7579274B2 (xx) |
EP (1) | EP1987177A1 (xx) |
JP (1) | JP5346215B2 (xx) |
KR (1) | KR101360595B1 (xx) |
CN (1) | CN101512048B (xx) |
CA (1) | CA2643018C (xx) |
HK (1) | HK1132768A1 (xx) |
IL (1) | IL193308A (xx) |
TW (1) | TWI437638B (xx) |
WO (1) | WO2007096390A1 (xx) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100808796B1 (ko) * | 2006-10-09 | 2008-03-03 | 동부일렉트로닉스 주식회사 | 전해 도금 방법 |
FR2930785B1 (fr) * | 2008-05-05 | 2010-06-11 | Alchimer | Composition d'electrodeposition et procede de revetement d'un substrat semi-conducteur utilisant ladite composition |
JP5388191B2 (ja) * | 2009-05-26 | 2014-01-15 | Jx日鉱日石金属株式会社 | 貫通シリコンビアを有するめっき物及びその形成方法 |
FR2949121A1 (fr) * | 2009-08-12 | 2011-02-18 | Alchimer | Electrolyte et procede d''electrodeposition de cuivre sur une couche barriere, et substrat semi-conducteur obtenu par un tel procede. |
US20110162701A1 (en) * | 2010-01-03 | 2011-07-07 | Claudio Truzzi | Photovoltaic Cells |
US20110192462A1 (en) * | 2010-01-03 | 2011-08-11 | Alchimer, S.A. | Solar cells |
US20130168255A1 (en) * | 2010-06-11 | 2013-07-04 | Alchimer | Copper-electroplating composition and process for filling a cavity in a semiconductor substrate using this composition |
FR2961220B1 (fr) * | 2010-06-11 | 2012-08-17 | Alchimer | Composition d'electrodeposition de cuivre et procede de remplissage d'une cavite d'un substrat semi-conducteur utilisant cette composition |
EP2528089B1 (en) * | 2011-05-23 | 2014-03-05 | Alchimer | Method for forming a vertical electrical connection in a layered semiconductor structure |
CN103426814B (zh) * | 2012-05-24 | 2015-04-01 | 中芯国际集成电路制造(上海)有限公司 | 填充金属的方法 |
FR2995912B1 (fr) * | 2012-09-24 | 2014-10-10 | Alchimer | Electrolyte et procede d'electrodeposition de cuivre sur une couche barriere |
TWI478861B (zh) * | 2012-11-22 | 2015-04-01 | Univ Nat Chunghsing | Electrodeposition of copper nanoparticles |
US9349636B2 (en) | 2013-09-26 | 2016-05-24 | Intel Corporation | Interconnect wires including relatively low resistivity cores |
CN103579101A (zh) * | 2013-11-05 | 2014-02-12 | 复旦大学 | 采用脉冲电镀铜方式实现铜互连的方法 |
EP3080340B1 (en) | 2013-12-09 | 2018-04-18 | Aveni | Copper electrodeposition bath containing an electrochemically inert cation |
JP6585434B2 (ja) * | 2014-10-06 | 2019-10-02 | 株式会社荏原製作所 | めっき方法 |
US9758845B2 (en) * | 2014-12-09 | 2017-09-12 | Intel Corporation | Microelectronic substrates having copper alloy conductive route structures |
US10329683B2 (en) | 2016-11-03 | 2019-06-25 | Lam Research Corporation | Process for optimizing cobalt electrofill using sacrificial oxidants |
FR3061601B1 (fr) | 2016-12-29 | 2022-12-30 | Aveni | Solution d'electrodeposition de cuivre et procede pour des motifs de facteur de forme eleve |
KR102056980B1 (ko) | 2017-03-31 | 2019-12-17 | 제이엑스금속주식회사 | 황산구리, 황산구리 용액, 도금액, 황산구리의 제조 방법, 반도체 회로 기판의 제조 방법 및 전자기기의 제조 방법 |
CN110724983B (zh) * | 2019-10-12 | 2022-02-08 | 天津大学 | 一种利用脉冲电沉积法制备纳米铜包覆碳化钨核壳结构粉体的方法 |
US11972973B1 (en) | 2023-10-04 | 2024-04-30 | Chun-Ming Lin | Semiconductor structure and method of manufacturing a semiconductor structure |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5151168A (en) * | 1990-09-24 | 1992-09-29 | Micron Technology, Inc. | Process for metallizing integrated circuits with electrolytically-deposited copper |
TW593731B (en) * | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
US6309969B1 (en) * | 1998-11-03 | 2001-10-30 | The John Hopkins University | Copper metallization structure and method of construction |
JP3271756B2 (ja) * | 1999-03-01 | 2002-04-08 | 日本電気株式会社 | 半導体装置の製造方法 |
US7135404B2 (en) * | 2002-01-10 | 2006-11-14 | Semitool, Inc. | Method for applying metal features onto barrier layers using electrochemical deposition |
US20050006245A1 (en) * | 2003-07-08 | 2005-01-13 | Applied Materials, Inc. | Multiple-step electrodeposition process for direct copper plating on barrier metals |
US20050145499A1 (en) * | 2000-06-05 | 2005-07-07 | Applied Materials, Inc. | Plating of a thin metal seed layer |
JP2002004081A (ja) * | 2000-06-16 | 2002-01-09 | Learonal Japan Inc | シリコンウエハーへの電気めっき方法 |
US20020092673A1 (en) * | 2001-01-17 | 2002-07-18 | International Business Machines Corporation | Tungsten encapsulated copper interconnections using electroplating |
US6464779B1 (en) * | 2001-01-19 | 2002-10-15 | Novellus Systems, Inc. | Copper atomic layer chemical vapor desposition |
KR20020092444A (ko) * | 2001-02-23 | 2002-12-11 | 가부시키 가이샤 에바라 세이사꾸쇼 | 구리-도금 용액, 도금 방법 및 도금 장치 |
JP4207394B2 (ja) | 2001-03-28 | 2009-01-14 | 株式会社村田製作所 | セラミック電子部品の銅電極形成方法 |
JP2002329682A (ja) * | 2001-04-27 | 2002-11-15 | Anelva Corp | Cu薄膜作製方法 |
US6723219B2 (en) * | 2001-08-27 | 2004-04-20 | Micron Technology, Inc. | Method of direct electroplating on a low conductivity material, and electroplated metal deposited therewith |
US6664633B1 (en) * | 2001-09-10 | 2003-12-16 | Lsi Logic Corporation | Alkaline copper plating |
US6812143B2 (en) * | 2002-04-26 | 2004-11-02 | International Business Machines Corporation | Process of forming copper structures |
JP4224434B2 (ja) * | 2004-06-30 | 2009-02-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7438794B2 (en) * | 2004-09-30 | 2008-10-21 | Intel Corporation | Method of copper electroplating to improve gapfill |
-
2007
- 2007-02-20 US US11/708,293 patent/US7579274B2/en active Active
- 2007-02-21 EP EP07712279A patent/EP1987177A1/en not_active Withdrawn
- 2007-02-21 CA CA2643018A patent/CA2643018C/en not_active Expired - Fee Related
- 2007-02-21 KR KR1020087019862A patent/KR101360595B1/ko active IP Right Grant
- 2007-02-21 CN CN2007800054940A patent/CN101512048B/zh active Active
- 2007-02-21 JP JP2008555788A patent/JP5346215B2/ja active Active
- 2007-02-21 WO PCT/EP2007/051681 patent/WO2007096390A1/en active Application Filing
- 2007-02-26 TW TW096106492A patent/TWI437638B/zh active
-
2008
- 2008-08-07 IL IL193308A patent/IL193308A/en active IP Right Grant
-
2009
- 2009-11-13 HK HK09110639.7A patent/HK1132768A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200741870A (en) | 2007-11-01 |
TWI437638B (zh) | 2014-05-11 |
KR101360595B1 (ko) | 2014-02-11 |
JP5346215B2 (ja) | 2013-11-20 |
CA2643018A1 (en) | 2007-08-30 |
CA2643018C (en) | 2014-04-22 |
IL193308A0 (en) | 2009-05-04 |
JP2009527912A (ja) | 2009-07-30 |
IL193308A (en) | 2013-06-27 |
CN101512048A (zh) | 2009-08-19 |
US20070272560A1 (en) | 2007-11-29 |
EP1987177A1 (en) | 2008-11-05 |
CN101512048B (zh) | 2011-12-28 |
US7579274B2 (en) | 2009-08-25 |
KR20080100813A (ko) | 2008-11-19 |
WO2007096390A1 (en) | 2007-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20160221 |