HK1128821A1 - Method of forming low capacitance esd device and structure therefor - Google Patents

Method of forming low capacitance esd device and structure therefor

Info

Publication number
HK1128821A1
HK1128821A1 HK09106792.8A HK09106792A HK1128821A1 HK 1128821 A1 HK1128821 A1 HK 1128821A1 HK 09106792 A HK09106792 A HK 09106792A HK 1128821 A1 HK1128821 A1 HK 1128821A1
Authority
HK
Hong Kong
Prior art keywords
low capacitance
esd device
forming low
structure therefor
capacitance esd
Prior art date
Application number
HK09106792.8A
Other languages
English (en)
Inventor
Thomas Keena
Ki Chang
Francine Y Robb
Mingjiao Liu
Ali Salih
John Michael Parsey Jr
George Chang
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of HK1128821A1 publication Critical patent/HK1128821A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/929—PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/966—Selective oxidation of ion-amorphousized layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK09106792.8A 2007-09-21 2009-07-24 Method of forming low capacitance esd device and structure therefor HK1128821A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/859,570 US7538395B2 (en) 2007-09-21 2007-09-21 Method of forming low capacitance ESD device and structure therefor

Publications (1)

Publication Number Publication Date
HK1128821A1 true HK1128821A1 (en) 2009-11-06

Family

ID=40470732

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09106792.8A HK1128821A1 (en) 2007-09-21 2009-07-24 Method of forming low capacitance esd device and structure therefor

Country Status (5)

Country Link
US (2) US7538395B2 (zh)
KR (1) KR101490128B1 (zh)
CN (1) CN101393912B (zh)
HK (1) HK1128821A1 (zh)
TW (1) TWI491019B (zh)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172165A (ja) * 2007-01-15 2008-07-24 Toshiba Corp 半導体装置
DE102007024355B4 (de) 2007-05-24 2011-04-21 Infineon Technologies Ag Verfahren zum Herstellen einer Schutzstruktur
CN101667727B (zh) * 2008-09-05 2012-11-21 群康科技(深圳)有限公司 接口静电保护电路
US7812367B2 (en) * 2008-10-15 2010-10-12 Semiconductor Components Industries, Llc Two terminal low capacitance multi-channel ESD device
US8089095B2 (en) * 2008-10-15 2012-01-03 Semiconductor Components Industries, Llc Two terminal multi-channel ESD device and method therefor
US9142592B2 (en) 2009-04-09 2015-09-22 Infineon Technologies Ag Integrated circuit including ESD device
JP5613400B2 (ja) * 2009-11-18 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN101847663B (zh) * 2010-04-30 2012-08-15 上海新进半导体制造有限公司 一种瞬间电压抑制器及形成瞬间电压抑制器的方法
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
US8169000B2 (en) 2010-07-15 2012-05-01 Amazing Microelectronic Corp. Lateral transient voltage suppressor with ultra low capacitance
CN102376702B (zh) * 2010-08-20 2014-09-17 半导体元件工业有限责任公司 两端子多通道esd器件及其方法
US8431959B2 (en) 2010-10-19 2013-04-30 Semiconductor Components Industries, Llc Method of forming an ESD protection device and structure therefor
US8431999B2 (en) * 2011-03-25 2013-04-30 Amazing Microelectronic Corp. Low capacitance transient voltage suppressor
KR101323143B1 (ko) * 2011-10-27 2013-10-30 (주)아트로닉스 정전기 보호용 반도체 소자의 제조방법과 그 방법에 의하여 제조되는 정전기 보호용 반도체 소자
SG11201500489YA (en) 2012-07-25 2015-02-27 Kolltan Pharmaceuticals Inc Anti-kit antibodies and uses thereof
CN103681653A (zh) * 2012-09-10 2014-03-26 株式会社东芝 半导体器件
US8723264B2 (en) 2012-10-17 2014-05-13 Semicondutor Components Industries, Llc Electrostatic discharge devices and method of making the same
EP2725615B1 (en) 2012-10-29 2019-01-23 IMEC vzw Semiconductor device comprising a diode and a bipolar transistor and method for producing such a device
US9337178B2 (en) 2012-12-09 2016-05-10 Semiconductor Components Industries, Llc Method of forming an ESD device and structure therefor
JP2014175324A (ja) * 2013-03-06 2014-09-22 Panasonic Corp 低容量半導体装置
US8975146B2 (en) 2013-05-01 2015-03-10 International Business Machines Corporation Trench isolation structures and methods for bipolar junction transistors
JP2015012184A (ja) * 2013-06-28 2015-01-19 株式会社東芝 半導体素子
CN104299965A (zh) * 2013-07-15 2015-01-21 联华电子股份有限公司 静电防护装置
CN103474428B (zh) * 2013-09-16 2016-03-02 杭州士兰集成电路有限公司 集成式双向超低电容tvs器件及其制造方法
US9224703B2 (en) 2013-09-24 2015-12-29 Semiconductor Components Industries, Llc Electronic device including a diode and a process of forming the same
KR101414005B1 (ko) * 2013-10-31 2014-07-04 주식회사 케이이씨 과도 전압 억제 소자 및 그 제조 방법
CN104733544A (zh) * 2013-12-23 2015-06-24 上海华虹宏力半导体制造有限公司 Tvs器件及工艺方法
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
FR3033938B1 (fr) * 2015-03-19 2018-04-27 Stmicroelectronics (Rousset) Sas Diode zener a tension de claquage ajustable
CN104851919B (zh) * 2015-04-10 2017-12-19 矽力杰半导体技术(杭州)有限公司 双向穿通半导体器件及其制造方法
US9991250B2 (en) 2015-07-06 2018-06-05 Semiconductor Components Industries, Llc Electrostatic discharge devices and method of making the same
US10217733B2 (en) 2015-09-15 2019-02-26 Semiconductor Components Industries, Llc Fast SCR structure for ESD protection
US20170373142A1 (en) * 2016-06-23 2017-12-28 Littelfuse, Inc. Semiconductor device having side-diffused trench plug
US10930637B2 (en) 2018-09-06 2021-02-23 Amazing Microelectronic Corp. Transient voltage suppressor
FR3089679A1 (fr) 2018-12-11 2020-06-12 Stmicroelectronics (Tours) Sas Dispositif de commutation et procédé de fabrication d'un tel dispositif
US20230215864A1 (en) * 2022-01-03 2023-07-06 Amazing Microelectronic Corp. Bidirectional electrostatic discharge (esd) protection device
US11948933B2 (en) 2022-02-09 2024-04-02 Semiconductor Components Industries, Llc Semiconductor devices and methods of manufacturing semiconductor devices
WO2024186635A2 (en) 2023-03-03 2024-09-12 Celldex Therapeutics, Inc. Anti-stem cell factor (scf) and anti-thymic stromal lymphopoietin (tslp) antibodies and bispecific constructs

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880511A (en) 1995-06-30 1999-03-09 Semtech Corporation Low-voltage punch-through transient suppressor employing a dual-base structure
JPH09121138A (ja) 1995-08-24 1997-05-06 Fujitsu Ltd フィルタ装置及びこれを用いた無線装置
US5706163A (en) 1995-11-28 1998-01-06 California Micro Devices Corporation ESD-protected thin film capacitor structures
US5990511A (en) 1997-10-16 1999-11-23 International Business Machines Corporation Memory cell with transfer device node in selective polysilicon
US6140674A (en) 1998-07-27 2000-10-31 Advanced Micro Devices, Inc. Buried trench capacitor
US6365932B1 (en) * 1999-08-20 2002-04-02 Denso Corporation Power MOS transistor
US6515345B2 (en) * 2001-02-21 2003-02-04 Semiconductor Components Industries Llc Transient voltage suppressor with diode overlaying another diode for conserving space
US6489660B1 (en) 2001-05-22 2002-12-03 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices
US6600204B2 (en) 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
US6953980B2 (en) 2002-06-11 2005-10-11 Semiconductor Components Industries, Llc Semiconductor filter circuit and method
US6822295B2 (en) 2002-07-30 2004-11-23 Honeywell International Inc. Overvoltage protection device using pin diodes
US6642550B1 (en) * 2002-08-26 2003-11-04 California Micro Devices Silicon sub-mount capable of single wire bonding and of providing ESD protection for light emitting diode devices
US6984860B2 (en) 2002-11-27 2006-01-10 Semiconductor Components Industries, L.L.C. Semiconductor device with high frequency parallel plate trench capacitor structure
US7009831B2 (en) * 2004-02-27 2006-03-07 Microsemi Corporation PIN or NIP low capacitance transient voltage suppressors and steering diodes
KR100633681B1 (ko) * 2004-07-27 2006-10-12 서울반도체 주식회사 제너다이오드들을 갖는 발광다이오드 패키지
US7880223B2 (en) 2005-02-11 2011-02-01 Alpha & Omega Semiconductor, Ltd. Latch-up free vertical TVS diode array structure using trench isolation
US7262681B2 (en) 2005-02-11 2007-08-28 Semiconductor Components Industries, L.L.C. Integrated semiconductor inductor and method therefor

Also Published As

Publication number Publication date
TWI491019B (zh) 2015-07-01
CN101393912A (zh) 2009-03-25
US8039359B2 (en) 2011-10-18
KR20090031290A (ko) 2009-03-25
CN101393912B (zh) 2012-06-27
US20090162988A1 (en) 2009-06-25
KR101490128B1 (ko) 2015-02-05
TW200933874A (en) 2009-08-01
US20090079022A1 (en) 2009-03-26
US7538395B2 (en) 2009-05-26

Similar Documents

Publication Publication Date Title
HK1128821A1 (en) Method of forming low capacitance esd device and structure therefor
IL198834A0 (en) Supercapacitor desalination device and method of making
EP2312558A4 (en) DISPLAY DEVICE AND METHOD FOR THE PRODUCTION THEREOF
EP2398005A4 (en) DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
GB2459862B (en) Capacitive transducer circuit and method
HK1167277A1 (zh) 用於確保用戶隱私的計算機實現方法及裝置
EP2352211A4 (en) DEVICE FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND METHOD OF MANUFACTURING THE SAME
HK1128529A1 (en) Method of forming an esd detector and structure therefor
EP2110824A4 (en) CONDENSATE UNIT AND MANUFACTURING METHOD THEREFOR
GB0821660D0 (en) Manufacturing device and method
EP2453536A4 (en) DEVICE FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGE AND METHOD OF MANUFACTURING THE SAME
EP2121511A4 (en) DEVICES AND METHOD FOR MICROPACKING
EP2384103A4 (en) METHOD FOR PRODUCING AN ELECTRONIC DEVICE AND ELECTRONIC DEVICE
EP2171132A4 (en) NANOTUBE EQUIPMENT AND METHOD FOR THE PRODUCTION THEREOF
HK1123638A1 (en) Method of forming an over-voltage protection circuit and structure therefor
EP2326480A4 (en) ELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME
EP2447959A4 (en) ELECTROSTATIC DISCHARGE PROTECTION DEVICE (EDS) AND METHOD OF MANUFACTURING THE SAME
GB0915800D0 (en) Electrphoretic display device and method of fabricating the same
HK1140586A1 (en) Method of forming an integrated semiconductor device and structure therefor
IL210385A (en) Ophthalmic instruments and a method for their manufacture
EP2123373A4 (en) DOSE MANUFACTURER AND CAN MANUFACTURING METHOD
EP2219173A4 (en) DISPLAY DEVICE AND METHOD FOR THE PRODUCTION THEREOF
EP2397209A4 (en) FILTRATION DEVICE AND METHOD FOR THE PRODUCTION THEREOF
EP2207195A4 (en) DEVICE AND METHOD FOR MANUFACTURING THE DEVICE
EP2421037A4 (en) ELECTRONIC DEVICE MOUNTING STRUCTURE AND ELECTRONIC DEVICE MOUNTING METHOD

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210821