HK1119487A1 - Multilayer reflecting mirror, multilayer reflecting mirror manufacturing method, optical system, exposure apparatus and device manufacturing method - Google Patents

Multilayer reflecting mirror, multilayer reflecting mirror manufacturing method, optical system, exposure apparatus and device manufacturing method

Info

Publication number
HK1119487A1
HK1119487A1 HK08110891.1A HK08110891A HK1119487A1 HK 1119487 A1 HK1119487 A1 HK 1119487A1 HK 08110891 A HK08110891 A HK 08110891A HK 1119487 A1 HK1119487 A1 HK 1119487A1
Authority
HK
Hong Kong
Prior art keywords
reflecting mirror
multilayer reflecting
manufacturing
optical system
exposure apparatus
Prior art date
Application number
HK08110891.1A
Other languages
English (en)
Inventor
Masayuki Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1119487A1 publication Critical patent/HK1119487A1/xx

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Nanotechnology (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Atmospheric Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
HK08110891.1A 2005-10-11 2008-09-30 Multilayer reflecting mirror, multilayer reflecting mirror manufacturing method, optical system, exposure apparatus and device manufacturing method HK1119487A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005295856 2005-10-11
PCT/JP2006/319876 WO2007043414A1 (ja) 2005-10-11 2006-10-04 多層膜反射鏡、多層膜反射鏡の製造方法、光学系、露光装置及びデバイスの製造方法

Publications (1)

Publication Number Publication Date
HK1119487A1 true HK1119487A1 (en) 2009-03-06

Family

ID=37942658

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08110891.1A HK1119487A1 (en) 2005-10-11 2008-09-30 Multilayer reflecting mirror, multilayer reflecting mirror manufacturing method, optical system, exposure apparatus and device manufacturing method

Country Status (7)

Country Link
EP (1) EP1947682B1 (xx)
JP (1) JP5061903B2 (xx)
KR (1) KR101310525B1 (xx)
CN (1) CN100559551C (xx)
HK (1) HK1119487A1 (xx)
TW (1) TWI410676B (xx)
WO (1) WO2007043414A1 (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101593712B1 (ko) 2008-02-15 2016-02-12 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투영 노광 장치에 사용하기 위한 패싯 미러
DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102009029471A1 (de) * 2009-09-15 2011-03-31 Carl Zeiss Smt Gmbh Spiegel zur Verwendung in einer Mikrolithographie-Projektionsbelichtungsanlage
US8526104B2 (en) * 2010-04-30 2013-09-03 Corning Incorporated Plasma ion assisted deposition of Mo/Si multilayer EUV coatings
DE102011005543A1 (de) 2011-03-15 2012-09-20 Carl Zeiss Smt Gmbh Verfahren zur Korrektur der Oberflächenform eines Spiegels
JP6093753B2 (ja) 2011-03-23 2017-03-08 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー機構、ｅｕｖミラー機構を備えた光学系、及びｅｕｖミラー機構を備えた光学系を操作する方法
US9249501B2 (en) 2011-05-18 2016-02-02 Carl Zeiss Smt Gmbh Surface correction on coated mirrors
CN102681055B (zh) * 2012-05-30 2014-09-17 同济大学 一种硅铝合金/锆极紫外多层膜反射镜及其制备方法
DE102012223669A1 (de) 2012-12-19 2013-11-21 Carl Zeiss Smt Gmbh Wellenfrontkorrektur von beschichteten Spiegeln
DE102013212462A1 (de) 2013-06-27 2015-01-15 Carl Zeiss Smt Gmbh Oberflächenkorrektur von Spiegeln mit Entkopplungsbeschichtung
DE102013222330A1 (de) * 2013-11-04 2015-05-07 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US9581890B2 (en) * 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
CN105002466B (zh) * 2015-06-23 2017-10-31 中国科学院国家天文台南京天文光学技术研究所 碳化硅非球面反射镜加工与改性一体化的制备方法
DE102015213249A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Spiegels, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102015224238A1 (de) 2015-12-03 2016-12-15 Carl Zeiss Smt Gmbh Optisches Element, Projektionssystem und EUV-Lithographiesystem damit und Verfahren zur Korrektur einer Oberflächenform
US10217729B2 (en) 2016-09-30 2019-02-26 Intel Corporation Apparatus for micro pick and bond
DE102016224113A1 (de) 2016-12-05 2018-06-07 Carl Zeiss Smt Gmbh Intensitätsanpassungsfilter für die euv - mikrolithographie und verfahren zur herstellung desselben sowie beleuchtungssystem mit einem entsprechenden filter
US20180166294A1 (en) * 2016-12-13 2018-06-14 Intel Corporation Apparatus and methods to achieve uniform package thickness
TWI764614B (zh) * 2021-03-10 2022-05-11 台灣積體電路製造股份有限公司 微影系統及其方法
CN116463588B (zh) * 2023-04-23 2023-11-03 有研国晶辉新材料有限公司 一种红外滤光薄膜的制备方法、红外陷波光学元件

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441155A (en) 1987-08-05 1989-02-13 Mitsubishi Electric Corp Supporting device for electron lens
TW561279B (en) * 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
CA2374737C (en) 1999-07-09 2008-02-12 Boehringer Ingelheim Pharmaceuticals, Inc. Novel process for synthesis of heteroaryl-substituted urea compounds
TW519574B (en) * 2000-10-20 2003-02-01 Nikon Corp Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same
JP2002131487A (ja) * 2000-10-20 2002-05-09 Nikon Corp 多層膜反射鏡およびｅｕｖ露光装置
US6664554B2 (en) * 2001-01-03 2003-12-16 Euv Llc Self-cleaning optic for extreme ultraviolet lithography
JP4320970B2 (ja) * 2001-04-11 2009-08-26 株式会社ニコン 多層膜反射鏡の製造方法
TW561280B (en) * 2001-04-27 2003-11-11 Nikon Corp Multi-layer film reflection mirror and exposure equipment
JP2003014893A (ja) 2001-04-27 2003-01-15 Nikon Corp 多層膜反射鏡及び露光装置
JP4460284B2 (ja) * 2001-07-03 2010-05-12 イーユーヴィー リミテッド ライアビリティー コーポレイション 光学要素及びその形成方法
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
JP2003066195A (ja) * 2001-08-27 2003-03-05 Nikon Corp 多層膜除去加工装置、多層膜反射鏡、その製造方法、軟ｘ線光学系及び露光装置
EP1291680A2 (en) * 2001-08-27 2003-03-12 Nikon Corporation Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations
JP4415523B2 (ja) 2001-09-13 2010-02-17 株式会社ニコン 多層膜反射鏡、その製造方法、ｘ線露光装置、半導体デバイスの製造方法及びｘ線光学系
US7662263B2 (en) * 2002-09-27 2010-02-16 Euv Llc. Figure correction of multilayer coated optics
JP2005012006A (ja) * 2003-06-19 2005-01-13 Canon Inc 表面形状補正方法
JP2005156201A (ja) * 2003-11-21 2005-06-16 Canon Inc Ｘ線全反射ミラーおよびｘ線露光装置
US20050109278A1 (en) * 2003-11-26 2005-05-26 Ted Liang Method to locally protect extreme ultraviolet multilayer blanks used for lithography
JP2005295856A (ja) 2004-04-08 2005-10-27 Bio Media Co Ltd 油脂封入微小粉体の製造方法および油脂封入微小粉体
JP4482400B2 (ja) * 2004-08-17 2010-06-16 エスアイアイ・ナノテクノロジー株式会社 Ｅｕｖｌマスクの多層膜中の振幅欠陥修正方法

Also Published As

Publication number Publication date
CN100559551C (zh) 2009-11-11
TWI410676B (zh) 2013-10-01
CN101278376A (zh) 2008-10-01
EP1947682B1 (en) 2012-01-18
JP5061903B2 (ja) 2012-10-31
EP1947682A1 (en) 2008-07-23
KR101310525B1 (ko) 2013-09-23
TW200714930A (en) 2007-04-16
KR20080056763A (ko) 2008-06-23
JPWO2007043414A1 (ja) 2009-04-16
EP1947682A4 (en) 2009-06-24
WO2007043414A1 (ja) 2007-04-19

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20221004