HK1075139A1 - Non-volatile multi-threshold cmos latch with leakage control - Google Patents

Non-volatile multi-threshold cmos latch with leakage control

Info

Publication number
HK1075139A1
HK1075139A1 HK05107367.5A HK05107367A HK1075139A1 HK 1075139 A1 HK1075139 A1 HK 1075139A1 HK 05107367 A HK05107367 A HK 05107367A HK 1075139 A1 HK1075139 A1 HK 1075139A1
Authority
HK
Hong Kong
Prior art keywords
latch
circuits
voltage threshold
signal path
master
Prior art date
Application number
HK05107367.5A
Other languages
English (en)
Inventor
Mehdi Hamidi Sani
Gregory A Uvieghara
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of HK1075139A1 publication Critical patent/HK1075139A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356121—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit with synchronous operation

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
  • Non-Volatile Memory (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Amplifiers (AREA)
HK05107367.5A 2002-05-24 2005-08-23 Non-volatile multi-threshold cmos latch with leakage control HK1075139A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/155,378 US6794914B2 (en) 2002-05-24 2002-05-24 Non-volatile multi-threshold CMOS latch with leakage control
PCT/US2003/016055 WO2003100830A2 (en) 2002-05-24 2003-05-23 Non-volatile multi-threshold cmos latch with leakage control

Publications (1)

Publication Number Publication Date
HK1075139A1 true HK1075139A1 (en) 2005-12-02

Family

ID=29549050

Family Applications (1)

Application Number Title Priority Date Filing Date
HK05107367.5A HK1075139A1 (en) 2002-05-24 2005-08-23 Non-volatile multi-threshold cmos latch with leakage control

Country Status (10)

Country Link
US (1) US6794914B2 (de)
EP (1) EP1510006B1 (de)
JP (1) JP2005527166A (de)
AT (1) ATE412268T1 (de)
AU (1) AU2003273139A1 (de)
CA (1) CA2487363A1 (de)
DE (1) DE60324275D1 (de)
HK (1) HK1075139A1 (de)
RU (1) RU2321944C2 (de)
WO (1) WO2003100830A2 (de)

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Also Published As

Publication number Publication date
AU2003273139A1 (en) 2003-12-12
RU2321944C2 (ru) 2008-04-10
US6794914B2 (en) 2004-09-21
US20030218231A1 (en) 2003-11-27
ATE412268T1 (de) 2008-11-15
WO2003100830A2 (en) 2003-12-04
EP1510006A2 (de) 2005-03-02
WO2003100830A3 (en) 2004-10-07
JP2005527166A (ja) 2005-09-08
EP1510006B1 (de) 2008-10-22
CA2487363A1 (en) 2003-12-04
DE60324275D1 (de) 2008-12-04
AU2003273139A8 (en) 2003-12-12
RU2004137817A (ru) 2005-06-10

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20120523