HK106597A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
HK106597A
HK106597A HK106597A HK106597A HK106597A HK 106597 A HK106597 A HK 106597A HK 106597 A HK106597 A HK 106597A HK 106597 A HK106597 A HK 106597A HK 106597 A HK106597 A HK 106597A
Authority
HK
Hong Kong
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Application number
HK106597A
Other languages
English (en)
Inventor
Takashi Nakazawa
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63064960A external-priority patent/JPH01238170A/ja
Priority claimed from JP63069988A external-priority patent/JPH01243033A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of HK106597A publication Critical patent/HK106597A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
HK106597A 1988-03-18 1997-06-26 Thin film transistor HK106597A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63064960A JPH01238170A (ja) 1988-03-18 1988-03-18 薄膜トランジスタ
JP63069988A JPH01243033A (ja) 1988-03-24 1988-03-24 薄膜トランジスタ

Publications (1)

Publication Number Publication Date
HK106597A true HK106597A (en) 1997-08-22

Family

ID=26406108

Family Applications (1)

Application Number Title Priority Date Filing Date
HK106597A HK106597A (en) 1988-03-18 1997-06-26 Thin film transistor

Country Status (5)

Country Link
US (1) US5097297A (xx)
EP (1) EP0333151B1 (xx)
KR (1) KR970008455B1 (xx)
DE (1) DE68909973T2 (xx)
HK (1) HK106597A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110838512A (zh) * 2018-08-16 2020-02-25 立锜科技股份有限公司 高压元件及其制造方法

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
US6190933B1 (en) * 1993-06-30 2001-02-20 The United States Of America As Represented By The Secretary Of The Navy Ultra-high resolution liquid crystal display on silicon-on-sapphire
JP3897826B2 (ja) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
US5926701A (en) * 1994-12-21 1999-07-20 Sony Electronics, Inc. Thin film transistor fabrication technique
JP3402909B2 (ja) * 1996-03-12 2003-05-06 アルプス電気株式会社 薄膜トランジスタ装置及び液晶表示装置
US5808317A (en) * 1996-07-24 1998-09-15 International Business Machines Corporation Split-gate, horizontally redundant, and self-aligned thin film transistors
JPH1048610A (ja) * 1996-07-31 1998-02-20 Furontetsuku:Kk 液晶表示素子
JP2001051293A (ja) * 1999-07-29 2001-02-23 Internatl Business Mach Corp <Ibm> 薄膜トランジスタ、液晶表示パネル、薄膜トランジスタの製造方法
KR100606963B1 (ko) * 2000-12-27 2006-08-01 엘지.필립스 엘시디 주식회사 액정 디스플레이 패널 및 그의 제조방법
GB0112563D0 (en) * 2001-05-23 2001-07-18 Koninl Philips Electronics Nv Active plate
US6933527B2 (en) * 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
EP1326273B1 (en) * 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
KR100979926B1 (ko) * 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US6847050B2 (en) * 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
KR100905470B1 (ko) * 2002-11-20 2009-07-02 삼성전자주식회사 박막 트랜지스터 어레이 기판
US7397455B2 (en) * 2003-06-06 2008-07-08 Samsung Electronics Co., Ltd. Liquid crystal display backplane layouts and addressing for non-standard subpixel arrangements
US7187353B2 (en) * 2003-06-06 2007-03-06 Clairvoyante, Inc Dot inversion on novel display panel layouts with extra drivers
US20040246280A1 (en) * 2003-06-06 2004-12-09 Credelle Thomas Lloyd Image degradation correction in novel liquid crystal displays
US7791679B2 (en) 2003-06-06 2010-09-07 Samsung Electronics Co., Ltd. Alternative thin film transistors for liquid crystal displays
US8035599B2 (en) 2003-06-06 2011-10-11 Samsung Electronics Co., Ltd. Display panel having crossover connections effecting dot inversion
US7218301B2 (en) * 2003-06-06 2007-05-15 Clairvoyante, Inc System and method of performing dot inversion with standard drivers and backplane on novel display panel layouts
US7209105B2 (en) * 2003-06-06 2007-04-24 Clairvoyante, Inc System and method for compensating for visual effects upon panels having fixed pattern noise with reduced quantization error
KR101080356B1 (ko) * 2003-10-13 2011-11-04 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 표시 장치
KR101019045B1 (ko) * 2003-11-25 2011-03-04 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
CN101241288B (zh) * 2004-01-28 2010-09-08 夏普株式会社 有源矩阵基板及显示装置
JP4108078B2 (ja) * 2004-01-28 2008-06-25 シャープ株式会社 アクティブマトリクス基板及び表示装置
SG115733A1 (en) * 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
US7590299B2 (en) * 2004-06-10 2009-09-15 Samsung Electronics Co., Ltd. Increasing gamma accuracy in quantized systems
GB0426563D0 (en) 2004-12-03 2005-01-05 Plastic Logic Ltd Alignment tolerant patterning on flexible substrates
TWI283073B (en) * 2005-12-14 2007-06-21 Au Optronics Corp LCD device and fabricating method thereof
JP2008042043A (ja) * 2006-08-09 2008-02-21 Hitachi Ltd 表示装置
KR20080030799A (ko) * 2006-10-02 2008-04-07 삼성전자주식회사 박막 트랜지스터 기판
TWI322508B (en) * 2006-12-12 2010-03-21 Au Optronics Corp Thin film transistor structure
CN100451796C (zh) * 2006-12-26 2009-01-14 友达光电股份有限公司 薄膜晶体管结构
JP4851545B2 (ja) * 2007-02-09 2012-01-11 シャープ株式会社 アクティブマトリクス基板、液晶パネル、液晶表示ユニット、液晶表示装置、テレビジョン受像機、アクティブマトリクス基板の製造方法、液晶パネルの製造方法
US8363175B2 (en) * 2007-06-28 2013-01-29 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device, television receiver, and method of manufacturing liquid crystal panel
US7897929B2 (en) 2007-12-06 2011-03-01 General Electric Company Reduced cost pixel design for flat panel x-ray imager
KR101406889B1 (ko) * 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
KR101367129B1 (ko) * 2008-07-08 2014-02-25 삼성전자주식회사 씬 필름 트랜지스터 및 그 제조 방법
US7932519B1 (en) 2009-12-28 2011-04-26 Century Display(Shenzhen)Co.,Ltd. Pixel structure
US8362573B2 (en) 2010-05-26 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and manufacturing methods thereof
US9312260B2 (en) 2010-05-26 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and manufacturing methods thereof
US8473888B2 (en) 2011-03-14 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods of designing integrated circuits
CN105140243A (zh) 2015-09-24 2015-12-09 重庆京东方光电科技有限公司 阵列基板及其制作方法、显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
US4770498A (en) * 1982-07-12 1988-09-13 Hosiden Electronics Co., Ltd. Dot-matrix liquid crystal display
US4597001A (en) * 1984-10-05 1986-06-24 General Electric Company Thin film field-effect transistors with tolerance to electrode misalignment
JPS61108171A (ja) * 1984-11-01 1986-05-26 Toshiba Corp 薄膜電界効果トランジスタ
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
FR2586859B1 (fr) * 1985-08-27 1987-11-20 Thomson Csf Procede de fabrication d'un transistor de commande pour ecran plat de visualisation et element de commande realise selon ce procede
JPS62150887A (ja) * 1985-12-25 1987-07-04 Nec Corp 薄膜電界効果型トランジスタ
FR2599559B1 (fr) * 1986-05-30 1989-05-05 Gen Electric Transistor a effet de champ a couches minces tolerant des defauts d'alignement d'electrodes
JPS63151083A (ja) * 1986-12-16 1988-06-23 Hitachi Ltd 薄膜半導体装置
JPS63265223A (ja) * 1987-04-23 1988-11-01 Alps Electric Co Ltd 薄膜トランジスタアレイおよびその製法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110838512A (zh) * 2018-08-16 2020-02-25 立锜科技股份有限公司 高压元件及其制造方法
CN110838512B (zh) * 2018-08-16 2023-02-28 立锜科技股份有限公司 高压元件及其制造方法

Also Published As

Publication number Publication date
US5097297A (en) 1992-03-17
KR970008455B1 (en) 1997-05-24
EP0333151A2 (en) 1989-09-20
DE68909973D1 (de) 1993-11-25
EP0333151B1 (en) 1993-10-20
DE68909973T2 (de) 1994-03-24
EP0333151A3 (en) 1990-05-23

Similar Documents

Publication Publication Date Title
KR970008455B1 (en) Thin film transistor
EP0383743A3 (en) Thin film transistor
EP0484987A3 (en) Thin film transistor
GB2171842B (en) Thin film transistor
GB8421403D0 (en) Thin film transistor
GB2185622B (en) Thin film transistor array
EP0334324A3 (en) Film cassette
EP0334325A3 (en) Film cassette
EP0341748A3 (en) Film cassette
GB2217910B (en) Organic thin film device
GB2153589B (en) Thin film transistor
GB8411967D0 (en) Thin film transistors
EP0301571A3 (en) Thin film transistor array
GB2169746B (en) Thin film transistor
GB8603522D0 (en) Manufacturing thin film transistor
EP0450985A3 (en) Diamond thin film transistor
EP0408129A3 (en) A thin film field effect transistor
HK153096A (en) Lightsafe masking film
EP0298745A3 (en) Thin film electroluminescent device
GB8704714D0 (en) Thin film transistors
GB8912221D0 (en) Plastic film
EP0271018A3 (en) Thin film solid state device
EP0334052A3 (en) Thin film transistor
EP0461592A3 (en) Thin film device
GB2203888B (en) Unit for dry-processing thin film

Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20080315