FR2599559B1 - Transistor a effet de champ a couches minces tolerant des defauts d'alignement d'electrodes - Google Patents
Transistor a effet de champ a couches minces tolerant des defauts d'alignement d'electrodesInfo
- Publication number
- FR2599559B1 FR2599559B1 FR8607776A FR8607776A FR2599559B1 FR 2599559 B1 FR2599559 B1 FR 2599559B1 FR 8607776 A FR8607776 A FR 8607776A FR 8607776 A FR8607776 A FR 8607776A FR 2599559 B1 FR2599559 B1 FR 2599559B1
- Authority
- FR
- France
- Prior art keywords
- tolerating
- thin film
- field effect
- effect transistor
- film field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8607776A FR2599559B1 (fr) | 1986-05-30 | 1986-05-30 | Transistor a effet de champ a couches minces tolerant des defauts d'alignement d'electrodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8607776A FR2599559B1 (fr) | 1986-05-30 | 1986-05-30 | Transistor a effet de champ a couches minces tolerant des defauts d'alignement d'electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2599559A1 FR2599559A1 (fr) | 1987-12-04 |
FR2599559B1 true FR2599559B1 (fr) | 1989-05-05 |
Family
ID=9335816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8607776A Expired FR2599559B1 (fr) | 1986-05-30 | 1986-05-30 | Transistor a effet de champ a couches minces tolerant des defauts d'alignement d'electrodes |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2599559B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0333151B1 (fr) * | 1988-03-18 | 1993-10-20 | Seiko Epson Corporation | Transistor en couche mince |
CN1297948C (zh) | 2002-04-26 | 2007-01-31 | 三洋电机株式会社 | 显示装置 |
KR101423671B1 (ko) | 2008-02-04 | 2014-07-25 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 장치 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2169746B (en) * | 1984-11-13 | 1988-09-14 | Sharp Kk | Thin film transistor |
-
1986
- 1986-05-30 FR FR8607776A patent/FR2599559B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2599559A1 (fr) | 1987-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |