HK1053010B - 磁傳感器 - Google Patents

磁傳感器

Info

Publication number
HK1053010B
HK1053010B HK03105088.9A HK03105088A HK1053010B HK 1053010 B HK1053010 B HK 1053010B HK 03105088 A HK03105088 A HK 03105088A HK 1053010 B HK1053010 B HK 1053010B
Authority
HK
Hong Kong
Prior art keywords
magnetic sensor
magnetic
sensor
Prior art date
Application number
HK03105088.9A
Other languages
English (en)
Other versions
HK1053010A1 (en
Inventor
鈴木利尚
佐藤秀樹
金子誠
Original Assignee
雅馬哈株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 雅馬哈株式會社 filed Critical 雅馬哈株式會社
Publication of HK1053010A1 publication Critical patent/HK1053010A1/xx
Publication of HK1053010B publication Critical patent/HK1053010B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
HK03105088.9A 2001-10-29 2003-07-15 磁傳感器 HK1053010B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001330681 2001-10-29
JP2002163310A JP3835354B2 (ja) 2001-10-29 2002-06-04 磁気センサ

Publications (2)

Publication Number Publication Date
HK1053010A1 HK1053010A1 (en) 2003-10-03
HK1053010B true HK1053010B (zh) 2006-03-03

Family

ID=26624161

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03105088.9A HK1053010B (zh) 2001-10-29 2003-07-15 磁傳感器

Country Status (9)

Country Link
US (1) US6707298B2 (zh)
EP (1) EP1306687B1 (zh)
JP (1) JP3835354B2 (zh)
KR (1) KR100642114B1 (zh)
CN (2) CN2600826Y (zh)
DE (1) DE60213539T2 (zh)
ES (1) ES2267926T3 (zh)
HK (1) HK1053010B (zh)
TW (1) TWI274173B (zh)

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Also Published As

Publication number Publication date
CN1229881C (zh) 2005-11-30
DE60213539D1 (de) 2006-09-14
EP1306687A2 (en) 2003-05-02
DE60213539T2 (de) 2007-08-09
EP1306687B1 (en) 2006-08-02
HK1053010A1 (en) 2003-10-03
JP2003202365A (ja) 2003-07-18
CN1417872A (zh) 2003-05-14
KR100642114B1 (ko) 2006-11-10
EP1306687A3 (en) 2004-01-21
CN2600826Y (zh) 2004-01-21
US6707298B2 (en) 2004-03-16
ES2267926T3 (es) 2007-03-16
KR20030036002A (ko) 2003-05-09
TWI274173B (en) 2007-02-21
US20030094944A1 (en) 2003-05-22
JP3835354B2 (ja) 2006-10-18
TW200300496A (en) 2003-06-01

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Effective date: 20121029