HK1029439A1 - Dark current reducing guard ring - Google Patents

Dark current reducing guard ring

Info

Publication number
HK1029439A1
HK1029439A1 HK00108568A HK00108568A HK1029439A1 HK 1029439 A1 HK1029439 A1 HK 1029439A1 HK 00108568 A HK00108568 A HK 00108568A HK 00108568 A HK00108568 A HK 00108568A HK 1029439 A1 HK1029439 A1 HK 1029439A1
Authority
HK
Hong Kong
Prior art keywords
guard ring
dark current
current reducing
reducing guard
dark
Prior art date
Application number
HK00108568A
Other languages
English (en)
Inventor
Lawrence T Clark
Mark A Beiley
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1029439A1 publication Critical patent/HK1029439A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
HK00108568A 1997-09-30 2000-12-29 Dark current reducing guard ring HK1029439A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/941,800 US5859450A (en) 1997-09-30 1997-09-30 Dark current reducing guard ring
PCT/US1998/014024 WO1999017380A1 (en) 1997-09-30 1998-07-06 Dark current reducing guard ring

Publications (1)

Publication Number Publication Date
HK1029439A1 true HK1029439A1 (en) 2001-03-30

Family

ID=25477082

Family Applications (1)

Application Number Title Priority Date Filing Date
HK00108568A HK1029439A1 (en) 1997-09-30 2000-12-29 Dark current reducing guard ring

Country Status (10)

Country Link
US (1) US5859450A (xx)
EP (1) EP1034570B1 (xx)
JP (1) JP4309574B2 (xx)
KR (1) KR100371457B1 (xx)
AU (1) AU8291798A (xx)
DE (1) DE69833760T2 (xx)
HK (1) HK1029439A1 (xx)
RU (1) RU2178600C1 (xx)
TW (1) TW441119B (xx)
WO (1) WO1999017380A1 (xx)

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US6147366A (en) * 1999-02-08 2000-11-14 Intel Corporation On chip CMOS optical element
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6445014B1 (en) 1999-06-16 2002-09-03 Micron Technology Inc. Retrograde well structure for a CMOS imager
US6512401B2 (en) 1999-09-10 2003-01-28 Intel Corporation Output buffer for high and low voltage bus
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US6465862B1 (en) * 1999-10-05 2002-10-15 Brannon Harris Method and apparatus for implementing efficient CMOS photo sensors
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US6309905B1 (en) 2000-01-31 2001-10-30 Taiwan Semiconductor Manufacturing Company Stripe photodiode element with high quantum efficiency for an image sensor cell
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US6365926B1 (en) 2000-09-20 2002-04-02 Eastman Kodak Company CMOS active pixel with scavenging diode
KR20020096336A (ko) * 2001-06-19 2002-12-31 삼성전자 주식회사 씨모스형 촬상 장치
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
KR100454074B1 (ko) * 2001-12-26 2004-10-26 동부전자 주식회사 반도체 소자의 이미지 센서 제조 방법
US6534356B1 (en) 2002-04-09 2003-03-18 Taiwan Semiconductor Manufacturing Company Method of reducing dark current for an image sensor device via use of a polysilicon pad
AU2002354316A1 (en) * 2002-11-05 2004-06-07 Akademia Gorniczo-Hutnicza Monolithic active pixel dosimeter
US6818930B2 (en) * 2002-11-12 2004-11-16 Micron Technology, Inc. Gated isolation structure for imagers
KR100907884B1 (ko) * 2002-12-31 2009-07-15 동부일렉트로닉스 주식회사 반도체 포토 다이오드 및 이의 제조 방법
US6897082B2 (en) * 2003-06-16 2005-05-24 Micron Technology, Inc. Method of forming well for CMOS imager
KR100535924B1 (ko) * 2003-09-22 2005-12-09 동부아남반도체 주식회사 시모스 이미지 센서 및 그 제조방법
US7180049B2 (en) * 2004-11-08 2007-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard rings and method for forming the same
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
US7342268B2 (en) * 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
US7564083B2 (en) * 2005-02-25 2009-07-21 United Microelectronics Corp. Active pixel sensor
JP4751395B2 (ja) * 2005-08-31 2011-08-17 富士通セミコンダクター株式会社 フォトダイオード、固体撮像装置、およびその製造方法
US8259293B2 (en) * 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
US7598575B1 (en) * 2007-09-12 2009-10-06 National Semiconductor Corporation Semiconductor die with reduced RF attenuation
US8188578B2 (en) * 2008-05-29 2012-05-29 Mediatek Inc. Seal ring structure for integrated circuits
US8815634B2 (en) * 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
US9171726B2 (en) 2009-11-06 2015-10-27 Infineon Technologies Ag Low noise semiconductor devices
JP5631668B2 (ja) * 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
KR101804268B1 (ko) 2010-11-02 2018-01-11 삼성전자주식회사 후면수광 이미지 센서에서 노이즈 차단을 위한 깊은 가드링 구조 및 잡음방지영역을 갖는 이미지센서 및 그 제조방법
RU2497319C1 (ru) * 2012-02-28 2013-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов

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Also Published As

Publication number Publication date
DE69833760D1 (de) 2006-05-04
KR100371457B1 (ko) 2003-02-07
JP2001518719A (ja) 2001-10-16
EP1034570B1 (en) 2006-03-08
JP4309574B2 (ja) 2009-08-05
EP1034570A1 (en) 2000-09-13
KR20010030818A (ko) 2001-04-16
RU2178600C1 (ru) 2002-01-20
TW441119B (en) 2001-06-16
DE69833760T2 (de) 2006-09-07
EP1034570A4 (en) 2002-09-25
AU8291798A (en) 1999-04-23
US5859450A (en) 1999-01-12
WO1999017380A1 (en) 1999-04-08

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100706