GB988115A - Method of fabricating semiconductor devices - Google Patents
Method of fabricating semiconductor devicesInfo
- Publication number
- GB988115A GB988115A GB2529963A GB2529963A GB988115A GB 988115 A GB988115 A GB 988115A GB 2529963 A GB2529963 A GB 2529963A GB 2529963 A GB2529963 A GB 2529963A GB 988115 A GB988115 A GB 988115A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- photoresist
- layer
- portions
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- -1 2-propenylidene Chemical group 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 150000001298 alcohols Chemical class 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000001588 bifunctional effect Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 150000002334 glycols Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920000728 polyester Polymers 0.000 abstract 1
- 102000004169 proteins and genes Human genes 0.000 abstract 1
- 108090000623 proteins and genes Proteins 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21369562A | 1962-07-31 | 1962-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB988115A true GB988115A (en) | 1965-04-07 |
Family
ID=22796141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2529963A Expired GB988115A (en) | 1962-07-31 | 1963-06-25 | Method of fabricating semiconductor devices |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE635672A (enrdf_load_stackoverflow) |
DE (1) | DE1246127B (enrdf_load_stackoverflow) |
GB (1) | GB988115A (enrdf_load_stackoverflow) |
NL (1) | NL295980A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0050415A1 (en) * | 1980-09-15 | 1982-04-28 | Photon Power Inc. | Process for forming a pattern of transparent conductive material |
EP0072933A1 (en) * | 1981-08-24 | 1983-03-02 | International Business Machines Corporation | Method for photolithographic pattern generation in a photoresist layer |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3386864A (en) * | 1963-12-09 | 1968-06-04 | Ibm | Semiconductor-metal-semiconductor structure |
DE2929739C2 (de) * | 1979-07-23 | 1984-10-31 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum Entfernen eines Teiles einer Metallschicht von einer Halbleiterscheibe |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL107347C (enrdf_load_stackoverflow) * | 1956-02-28 | |||
BE570279A (enrdf_load_stackoverflow) * | 1957-08-12 | 1900-01-01 | ||
FR77789E (fr) * | 1957-08-12 | 1962-04-20 | Int Standard Electric Corp | Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
-
0
- NL NL295980D patent/NL295980A/xx unknown
- BE BE635672D patent/BE635672A/xx unknown
-
1963
- 1963-06-25 GB GB2529963A patent/GB988115A/en not_active Expired
- 1963-07-15 DE DE1963R0035674 patent/DE1246127B/de active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0050415A1 (en) * | 1980-09-15 | 1982-04-28 | Photon Power Inc. | Process for forming a pattern of transparent conductive material |
EP0072933A1 (en) * | 1981-08-24 | 1983-03-02 | International Business Machines Corporation | Method for photolithographic pattern generation in a photoresist layer |
Also Published As
Publication number | Publication date |
---|---|
NL295980A (enrdf_load_stackoverflow) | |
BE635672A (enrdf_load_stackoverflow) | |
DE1246127B (de) | 1967-08-03 |
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