GB908370A - A method of zone-melting a rod of crystalline material - Google Patents

A method of zone-melting a rod of crystalline material

Info

Publication number
GB908370A
GB908370A GB1892560A GB1892560A GB908370A GB 908370 A GB908370 A GB 908370A GB 1892560 A GB1892560 A GB 1892560A GB 1892560 A GB1892560 A GB 1892560A GB 908370 A GB908370 A GB 908370A
Authority
GB
United Kingdom
Prior art keywords
rod
zone
melting
compression
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1892560A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB908370A publication Critical patent/GB908370A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

<PICT:0908370/III/1> A molten zone 3 is passed upwards through a crystalline rod 4 by means of a pancake induction heating coil 2 while the ends of the rod are compressed so as to form an enlarged rod 5 having a diameter greater than the internal diameter of the coil. The step of zone-melting with compression may be preceded by a step of zone-melting without compression in order to pre-purify the rod and optionally to form a mono-crystal. The step of zone-melting with compression may take place in a vacuum or an inert atmosphere. The upper holder for the rod may be fixed while the lower holder is advanced towards it with rotation. Alternatively the lower rod may be fixed or both rods may be moved towards one another. A three-fold increase in the cross-sectional area of the rod may be effected.
GB1892560A 1959-05-29 1960-05-27 A method of zone-melting a rod of crystalline material Expired GB908370A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63193A DE1148525B (en) 1959-05-29 1959-05-29 Method for enlarging the cross-section of the rod during crucible-free zone melting of a rod made of crystalline material, in particular semiconductor material

Publications (1)

Publication Number Publication Date
GB908370A true GB908370A (en) 1962-10-17

Family

ID=7496200

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1892560A Expired GB908370A (en) 1959-05-29 1960-05-27 A method of zone-melting a rod of crystalline material

Country Status (4)

Country Link
CH (1) CH378547A (en)
DE (1) DE1148525B (en)
GB (1) GB908370A (en)
NL (2) NL252060A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249406A (en) * 1963-01-08 1966-05-03 Dow Corning Necked float zone processing of silicon rod
US3351433A (en) * 1962-12-12 1967-11-07 Siemens Ag Method of producing monocrystalline semiconductor rods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1719021B1 (en) * 1963-07-13 1969-09-11 Siemens Ag Method for reducing the cross section of a vertically arranged rod of semiconductor material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351433A (en) * 1962-12-12 1967-11-07 Siemens Ag Method of producing monocrystalline semiconductor rods
US3249406A (en) * 1963-01-08 1966-05-03 Dow Corning Necked float zone processing of silicon rod

Also Published As

Publication number Publication date
NL252060A (en)
CH378547A (en) 1964-06-15
NL108958C (en)
DE1148525B (en) 1963-05-16

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