GB908370A - A method of zone-melting a rod of crystalline material - Google Patents
A method of zone-melting a rod of crystalline materialInfo
- Publication number
- GB908370A GB908370A GB1892560A GB1892560A GB908370A GB 908370 A GB908370 A GB 908370A GB 1892560 A GB1892560 A GB 1892560A GB 1892560 A GB1892560 A GB 1892560A GB 908370 A GB908370 A GB 908370A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- zone
- melting
- compression
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
<PICT:0908370/III/1> A molten zone 3 is passed upwards through a crystalline rod 4 by means of a pancake induction heating coil 2 while the ends of the rod are compressed so as to form an enlarged rod 5 having a diameter greater than the internal diameter of the coil. The step of zone-melting with compression may be preceded by a step of zone-melting without compression in order to pre-purify the rod and optionally to form a mono-crystal. The step of zone-melting with compression may take place in a vacuum or an inert atmosphere. The upper holder for the rod may be fixed while the lower holder is advanced towards it with rotation. Alternatively the lower rod may be fixed or both rods may be moved towards one another. A three-fold increase in the cross-sectional area of the rod may be effected.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES63193A DE1148525B (en) | 1959-05-29 | 1959-05-29 | Method for enlarging the cross-section of the rod during crucible-free zone melting of a rod made of crystalline material, in particular semiconductor material |
Publications (1)
Publication Number | Publication Date |
---|---|
GB908370A true GB908370A (en) | 1962-10-17 |
Family
ID=7496200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1892560A Expired GB908370A (en) | 1959-05-29 | 1960-05-27 | A method of zone-melting a rod of crystalline material |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH378547A (en) |
DE (1) | DE1148525B (en) |
GB (1) | GB908370A (en) |
NL (2) | NL252060A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3249406A (en) * | 1963-01-08 | 1966-05-03 | Dow Corning | Necked float zone processing of silicon rod |
US3351433A (en) * | 1962-12-12 | 1967-11-07 | Siemens Ag | Method of producing monocrystalline semiconductor rods |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1719021B1 (en) * | 1963-07-13 | 1969-09-11 | Siemens Ag | Method for reducing the cross section of a vertically arranged rod of semiconductor material |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT194444B (en) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Method and device for treating an elongated semiconductor crystal arrangement |
-
0
- NL NL108958D patent/NL108958C/xx active
- NL NL252060D patent/NL252060A/xx unknown
-
1959
- 1959-05-29 DE DES63193A patent/DE1148525B/en active Pending
-
1960
- 1960-05-10 CH CH534860A patent/CH378547A/en unknown
- 1960-05-27 GB GB1892560A patent/GB908370A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3351433A (en) * | 1962-12-12 | 1967-11-07 | Siemens Ag | Method of producing monocrystalline semiconductor rods |
US3249406A (en) * | 1963-01-08 | 1966-05-03 | Dow Corning | Necked float zone processing of silicon rod |
Also Published As
Publication number | Publication date |
---|---|
NL252060A (en) | |
CH378547A (en) | 1964-06-15 |
NL108958C (en) | |
DE1148525B (en) | 1963-05-16 |
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