GB1311458A - Production of homogeneous rods of semiconductor material - Google Patents

Production of homogeneous rods of semiconductor material

Info

Publication number
GB1311458A
GB1311458A GB5291571A GB5291571A GB1311458A GB 1311458 A GB1311458 A GB 1311458A GB 5291571 A GB5291571 A GB 5291571A GB 5291571 A GB5291571 A GB 5291571A GB 1311458 A GB1311458 A GB 1311458A
Authority
GB
United Kingdom
Prior art keywords
tube
semiconductor material
zone
melting
cylindrical core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5291571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1311458A publication Critical patent/GB1311458A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone

Abstract

1311458 Zone-melting SIEMENS AG 15 Nov 1971 [2 Dec 1970] 52915/71 Heading B1S A rod of semiconductor material is made by zone melting e.g. electric induction, by supporting in a substantially vertical position, a tube made from a semiconductor material and closed at one end, which tube contains a filling of crystalline pieces of semiconductor material and/or a doping material, passing a molten zone formed in the tube and contents from one end to the other end of the tube and rotating the parts of the tube and contents lying on opposite sides of the molten zone relative to one another. As shown, in a vacuumtight housing 1, between supports 2 and 3 is clamped a tube 8. Support 2 is connetced to a shaft 19 which is driven by an assembly 16. The suport 2 can be rotated and also displaced axially by 16. In a similar manner support 3 via shaft 18 and drive assembly 17 can be similarly rotated and moved axially. The molten zone 10, is formed by a highfrequency coil 12, which is movable along the tube by adjustable supply line 14. Below zone 10 lies a part 13 of the original tube filled with pieces of semiconductor material. In another embodiment using a tube which contains a cylindrical core of a doping material besides particulate semiconductor material, separate clamping means is provided for the tube and cylindrical core.
GB5291571A 1970-12-02 1971-11-15 Production of homogeneous rods of semiconductor material Expired GB1311458A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702059360 DE2059360A1 (en) 1970-12-02 1970-12-02 Process for the production of homogeneous bars from semiconductor material

Publications (1)

Publication Number Publication Date
GB1311458A true GB1311458A (en) 1973-03-28

Family

ID=5789794

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5291571A Expired GB1311458A (en) 1970-12-02 1971-11-15 Production of homogeneous rods of semiconductor material

Country Status (8)

Country Link
US (1) US3781209A (en)
BE (1) BE776149A (en)
DE (1) DE2059360A1 (en)
DK (1) DK136846C (en)
FR (1) FR2117202A5 (en)
GB (1) GB1311458A (en)
IT (1) IT941389B (en)
NL (1) NL7113983A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996011A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3961906A (en) * 1973-11-22 1976-06-08 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
DE2358300C3 (en) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for holding a semiconductor crystal rod vertically during crucible-free zone melting
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29825E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
US3988197A (en) * 1973-11-22 1976-10-26 Siemens Aktiengesellschaft Crucible-free zone melting of semiconductor crystal rods including oscillation dampening
US3996096A (en) * 1973-11-22 1976-12-07 Siemens Aktiengesellschaft Method for crucible-free zone melting of semiconductor crystal rods
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
JP2922078B2 (en) * 1993-03-17 1999-07-19 株式会社トクヤマ Silicon rod manufacturing method

Also Published As

Publication number Publication date
BE776149A (en) 1972-06-02
IT941389B (en) 1973-03-01
DK136846C (en) 1978-05-22
FR2117202A5 (en) 1972-07-21
DE2059360A1 (en) 1972-06-08
DK136846B (en) 1977-12-05
US3781209A (en) 1973-12-25
NL7113983A (en) 1972-06-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee