GB8623976D0 - Chemical vapour deposition reactor - Google Patents

Chemical vapour deposition reactor

Info

Publication number
GB8623976D0
GB8623976D0 GB868623976A GB8623976A GB8623976D0 GB 8623976 D0 GB8623976 D0 GB 8623976D0 GB 868623976 A GB868623976 A GB 868623976A GB 8623976 A GB8623976 A GB 8623976A GB 8623976 D0 GB8623976 D0 GB 8623976D0
Authority
GB
United Kingdom
Prior art keywords
vapour deposition
chemical vapour
deposition reactor
reactor
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB868623976A
Other versions
GB2181458A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epsilon LP
Original Assignee
Epsilon LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epsilon LP filed Critical Epsilon LP
Publication of GB8623976D0 publication Critical patent/GB8623976D0/en
Publication of GB2181458A publication Critical patent/GB2181458A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
GB08623976A 1985-10-07 1986-10-06 Apparatus and method for an axially symmetric chemical vapor deposition reactor Withdrawn GB2181458A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78473785A 1985-10-07 1985-10-07

Publications (2)

Publication Number Publication Date
GB8623976D0 true GB8623976D0 (en) 1986-11-12
GB2181458A GB2181458A (en) 1987-04-23

Family

ID=25133376

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08623976A Withdrawn GB2181458A (en) 1985-10-07 1986-10-06 Apparatus and method for an axially symmetric chemical vapor deposition reactor

Country Status (4)

Country Link
JP (1) JPS6289871A (en)
DE (1) DE3634129A1 (en)
GB (1) GB2181458A (en)
NL (1) NL8602356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959645A (en) * 2021-08-03 2022-08-30 江苏汉印机电科技股份有限公司 High-speed large-area CVD equipment based on SiC power device

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GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US4993355A (en) * 1987-03-31 1991-02-19 Epsilon Technology, Inc. Susceptor with temperature sensing device
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4821674A (en) * 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
DE3741708A1 (en) * 1987-12-09 1989-06-22 Asea Brown Boveri Device for depositing material from the gas phase
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
CH687258A5 (en) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gas inlet arrangement.
US5975912A (en) 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
WO1995033866A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation Method and apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US6053982A (en) * 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US5884412A (en) * 1996-07-24 1999-03-23 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
WO1999023691A2 (en) 1997-11-03 1999-05-14 Asm America, Inc. Improved low mass wafer support system
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
CN1155990C (en) * 1998-11-16 2004-06-30 Fsi国际股份有限公司 Equipment for UV wafer heating and photochemical processing
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US6149365A (en) * 1999-09-21 2000-11-21 Applied Komatsu Technology, Inc. Support frame for substrates
FR2815395B1 (en) * 2000-10-13 2004-06-18 Joint Industrial Processors For Electronics DEVICE FOR QUICK AND UNIFORM HEATING OF A SUBSTRATE BY INFRARED RADIATION
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US6776849B2 (en) 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6861321B2 (en) 2002-04-05 2005-03-01 Asm America, Inc. Method of loading a wafer onto a wafer holder to reduce thermal shock
JP4257576B2 (en) * 2003-03-25 2009-04-22 ローム株式会社 Deposition equipment
CN100401474C (en) * 2004-09-22 2008-07-09 旺宏电子股份有限公司 High density electro thick fluid chemical gaseous phase sedimentation process and method of improving film thickness unifomity
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
GB2478269A (en) * 2009-12-18 2011-09-07 Surrey Nanosystems Ltd Nanomaterials growth system and method
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
CN111446185A (en) 2019-01-17 2020-07-24 Asm Ip 控股有限公司 Ventilation base
TW202110587A (en) 2019-05-22 2021-03-16 荷蘭商Ａｓｍ Ｉｐ 控股公司 Workpiece susceptor body and method for purging workpiece susceptor
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing

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GB770955A (en) * 1954-04-09 1957-03-27 Ohio Commw Eng Co Improvements in the surface coating and impregnation of metal surfaces
GB1056430A (en) * 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
DE1289833B (en) * 1964-12-29 1969-02-27 Siemens Ag Method for epitaxially depositing a semiconductor layer
GB1291357A (en) * 1970-11-03 1972-10-04 Applied Materials Tech Improvements in or relating to radiation heated reactors
US3894164A (en) * 1973-03-15 1975-07-08 Rca Corp Chemical vapor deposition of luminescent films
US3874900A (en) * 1973-08-13 1975-04-01 Materials Technology Corp Article coated with titanium carbide and titanium nitride
JPS59207631A (en) * 1983-05-11 1984-11-24 Semiconductor Res Found Dry process employing photochemistry

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114959645A (en) * 2021-08-03 2022-08-30 江苏汉印机电科技股份有限公司 High-speed large-area CVD equipment based on SiC power device
CN114959645B (en) * 2021-08-03 2023-09-22 江苏汉印机电科技股份有限公司 High-speed large-area CVD equipment based on SiC power device

Also Published As

Publication number Publication date
GB2181458A (en) 1987-04-23
DE3634129A1 (en) 1987-05-07
NL8602356A (en) 1987-05-04
JPS6289871A (en) 1987-04-24

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)