CN100401474C - High density electro thick fluid chemical gaseous phase sedimentation process and method of improving film thickness unifomity - Google Patents
High density electro thick fluid chemical gaseous phase sedimentation process and method of improving film thickness unifomity Download PDFInfo
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- CN100401474C CN100401474C CNB2004100824811A CN200410082481A CN100401474C CN 100401474 C CN100401474 C CN 100401474C CN B2004100824811 A CNB2004100824811 A CN B2004100824811A CN 200410082481 A CN200410082481 A CN 200410082481A CN 100401474 C CN100401474 C CN 100401474C
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Abstract
The present invention relates to a process for preparing high density electric pulp chemical vapor deposition. A wafer is carried out with a first deposition step, then the wafer is rotated by an angle, and subsequently, a second deposition step is carried out to complete the deposition of thin films. Especially, the deposited thin films which are prepared by the process have uniform film thickness.
Description
Technical field
The invention relates to a kind of semiconductor approach, and particularly relevant for a kind of high density plasma chemical vapor deposition method and improve the method for film thickness uniformity.
Background technology
In semiconductor approach, chemical gaseous phase depositing process (Chemical Vapor Deposition, CVD) be a kind of film forming technology that is commonly used to, it can be divided into aumospheric pressure cvd method (Atmospheric CVD, AP-CVD), low-pressure chemical vapor deposition method (Low PressureCVD, LP-CVD), plasma chemical vapor deposition process (Plasma Enhanced CVD, PE-CVD) with the high density plasma chemical vapor deposition method (High Density Plasma CVD, HDP-CVD) etc.Wherein, utilize film that the high density plasma chemical vapor deposition method deposited in density, intercept the film that chemical gaseous phase depositing process deposited that all is better than utilizing other aspect the characteristic of moisture content and planarization.And, along with progressing greatly of semiconductor approach technology, component size is more and more little, therefore the high density plasma chemical vapor deposition method has become one of important method technology in time micron (Sub-Micro) semiconductor approach in modern age owing to possess the ability of better filling gap (Gap Fill) than other chemical gaseous phase depositing process.
The high density plasma chemical vapor deposition method is to carry out on the deposition machine in reative cell, in the process of thin film deposition, the reaction gas that reacts required is known from experience by the output of reacting gas delivery outlet, and diffuses to the wafer surface reaction, to form film in wafer surface.For instance, the Novellus deposition machine is to have 8 reacting gas delivery outlets, and these reacting gas delivery outlets are configured in around the wafer in equally spaced mode, in the process of thin film deposition, the reaction gas cognition of reacting required diffuses to the wafer surface reaction gradually by these 8 reacting gas delivery outlets, and forms film in wafer surface.
Yet, utilize the formed film of above-mentioned Novellus deposition machine, at contiguous reacting gas outlet aperture, promptly the Waffer edge place has the not good problem of film thickness uniformity, and makes film form as shown in Figure 1 wavy in the Waffer edge place.Forming above-mentioned wavy reason is owing to the reacting gas from these reacting gas delivery outlets outputs, can't diffuse to wafer surface equably, and promptly the wafer zones of different has flow reacting gas not of uniform size.Therefore, can generate the thin film (locating) of thickness at the outlet bearing of trend of reacting gas delivery outlet shown in Fig. 1 label 100, other zones beyond bearing of trend then can form thicker thickness (locating) shown in Fig. 1 label 102.And, above-mentioned wavy problem is at the Waffer edge place especially severe of contiguous reacting gas outlet aperture, and it is wavy that the film surface that is formed at the Waffer edge place is produced, and can make that so the film thickness uniformity at this place is not good, thereby influence the characteristic of film itself.
Summary of the invention
Supervise in this, purpose of the present invention is providing a kind of high density plasma chemical vapor deposition method exactly, to solve the problem of formed film in the membrane thickness unevenness of Waffer edge place generation.
Another purpose of the present invention provides another kind of high density plasma chemical vapor deposition method, to solve the problem of formed film in the membrane thickness unevenness of Waffer edge place generation.
A further object of the present invention provides a kind of method of improving the film thickness uniformity of film, to solve the problem of formed film in the membrane thickness unevenness of Waffer edge place generation.
The present invention proposes a kind of high density plasma chemical vapor deposition method, it is characterized in that, comprising:
On a wafer, carry out one first deposition step;
This wafer is rotated an angle; And
Carry out one second deposition step, finishing a depositing of thin film, and this film that is deposited has uniform thickness;
A deposition machine that wherein is used to deposit this film has n reacting gas delivery outlet, these reacting gas delivery outlets uniformly-spaced be configured in this wafer around, and this first deposition step and this second deposition step are to experience a time interval altogether, and when this time interval of experience 1/m, this angle that this wafer rotated is 360/, and (m * n) degree, and this m and this n are positive integer.
Wherein when this time interval of 1/2, this wafer is rotated this angle.
Wherein this deposition machine has 8 reacting gas delivery outlets, and this angle is 22.5 degree.
Wherein this first deposition step and this second deposition step are primary depositing circulation, and this deposition process also comprises and repeats this once above deposition cycle to form this film.
Wherein when this time interval of 1/2, this wafer is rotated this angle.
Wherein this deposition machine has 8 reacting gas delivery outlets, and this angle is 22.5 degree.
A kind of method of improving the film thickness uniformity of film of the present invention, be applicable to a chemical gaseous phase depositing process, it is characterized in that, this method is to be in the process of deposition one film on the wafer, this wafer is rotated an angle, and make this film that finally is deposited on this wafer have uniform thickness, a deposition machine that wherein is used to deposit this film has n reacting gas delivery outlet, these reacting gas delivery outlets uniformly-spaced be configured in this wafer around, and the process that deposits this film is to experience a time interval altogether, and when this time interval of experience 1/m, this angle that this wafer rotated is 360/, and (m * n) degree, and this m and this n are positive integer.
Wherein when this time interval of 1/2, this wafer is rotated this angle.
Wherein this deposition machine has 8 reacting gas delivery outlets, and this angle is 22.5 degree.
Wherein this chemical gaseous phase depositing process comprises a high density plasma chemical vapor deposition method.
Because the present invention is in the process of carrying out membrane deposition method, be that wafer is rotated an angle, therefore can on the thin film of script thickness, form the thicker rete of another layer thickness, and on the thicker film of script thickness, form the thin rete of another layer thickness, so can be so that the final film that deposits has uniform thickness.
Description of drawings
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 be on known a kind of wafer its film thickness distribution of film on look schematic diagram.
Fig. 2 is the flow chart according to a kind of high density plasma chemical vapor deposition method of a preferred embodiment of the present invention.
Execution mode
The method of the film thickness uniformity of improving film proposed by the invention, be to be applicable to chemical gaseous phase depositing process, the method is to be this wafer is rotated an angle, and the film that skill finally is deposited on the wafer to have uniform thickness in the process of deposit film on the wafer.Wherein, the angle that wafer rotated for example is to be decided by the number that is disposed at the reacting gas delivery outlet around the wafer, and the time point of the time point of the rotation wafer time that for example to be the whole deposition process of 1/m required, wherein m is a positive integer.For instance, if deposition one film need experience a time interval (t) altogether, then when deposition process proceeds to the time interval of half (t/2), (n is the number of reacting gas delivery outlet to need earlier wafer to be rotated the 360/2n degree, and be positive integer) after, proceed follow-up deposition again.Thus, its inhomogeneous its thinner thickness place of film that is deposited that makes of diffusion of the gas of being exported because of the reacting gas delivery outlet at the beginning when wafer deposits once more through the back of rotation moderately, can form the thicker rete of another layer thickness in this place.On the thicker film of script thickness, then can form the thin rete of another layer thickness, therefore can be so that the final film that deposits has uniform thickness.
Below be application with the method for the above-mentioned film thickness uniformity of improving film of high density plasma chemical vapor deposition method explanation, right non-category in order to the application that limits the method.
High density plasma chemical vapor deposition method of the present invention is to carry out on the deposition machine in the high density plasma chemical vapor deposition reative cell, wherein deposition machine for example is the Novellus deposition machine with 8 reacting gas delivery outlets, and these reacting gas delivery outlets are to be disposed at around the wafer in equally spaced mode.Below be that flow chart with the high density plasma chemical vapor deposition method of Fig. 2 illustrates the present invention.
Please refer to Fig. 2, high density plasma chemical vapor deposition method of the present invention is prior to carrying out first deposition step on the wafer, to form the material layer (step 200) of part on wafer.Wherein, the material of material layer comprises dielectric material, and it for example is a silica.
Then, wafer is rotated an angle (step 202).Wherein, the angle that wafer rotated for example is to be decided by the number that is disposed at the reacting gas delivery outlet around the wafer, and the time point of the time point of the rotation wafer time that for example to be the whole deposition process of 1/m required, wherein m is a positive integer.For instance, if finishing whole material layer depositions need experience a time interval t altogether, when deposition process proceeds to the time interval (t/m) of 1/m, be after earlier wafer rotation 360/ (mXn) being spent, to proceed follow-up deposition more then.Wherein n is the number of reacting gas delivery outlet, and n is positive integer, and m also is a positive integer.With the present embodiment is example, and the Novellus deposition machine has 8 reacting gas delivery outlets, when deposition process proceeds to the time interval (t/2) of half, is with wafer rotation 22.5 degree then.
Then, carry out second deposition step,, and finish the deposition (step 204) of material layer with deposited material layer once more on established material layer.Particularly, formerly in the step 200, its inhomogeneous its thinner thickness place of material layer that is deposited that makes of diffusion of the gas of being exported because of the reacting gas delivery outlet, when wafer deposits (step 204) afterwards and once more through moderately rotating (step 202), can form the thicker material layer of another layer thickness in this place.Similarly, inhomogeneous its thickness thicker part of material layer that is deposited that makes of its diffusion of the gas of being exported because of the reacting gas delivery outlet, when wafer deposits (step 204) afterwards and once more through moderately rotating (step 202), can form the material layer that another layer thickness approaches in this place.So can solve the problem of known membrane thickness unevenness.
In addition, in a preferred embodiment, if step 200, step 204 are considered as the primary depositing circulation, and this material layer also can form by carrying out once above deposition cycle.In other words, in the deposition process of material layer, can carry out repeatedly the step (step 202) of wafer rotation, and make the film that is finally deposited have uniform thickness equally.
Because the present invention is in the process of carrying out membrane deposition method, be that wafer is rotated an angle, therefore can on the thin film of script thickness, form the thicker rete of another layer thickness, and on the thicker film of script thickness, form the thin rete of another layer thickness, so can be so that the final film that deposits has uniform thickness.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; anyly be familiar with this operator; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking accompanying being as the criterion that claim defines.
Claims (10)
1. a high density plasma chemical vapor deposition method is characterized in that, comprising:
On a wafer, carry out one first deposition step;
This wafer is rotated an angle; And
Carry out one second deposition step, finishing a depositing of thin film, and this film that is deposited has uniform thickness;
A deposition machine that wherein is used to deposit this film has n reacting gas delivery outlet, these reacting gas delivery outlets uniformly-spaced be configured in this wafer around, and this first deposition step and this second deposition step are to experience a time interval altogether, and when this time interval of experience 1/m, this angle that this wafer rotated is 360/, and (m * n) degree, and this m and this n are positive integer.
2. high density plasma chemical vapor deposition method as claimed in claim 1 is characterized in that, wherein when this time interval of 1/2, this wafer is rotated this angle.
3. high density plasma chemical vapor deposition method as claimed in claim 2 is characterized in that, wherein this deposition machine has 8 reacting gas delivery outlets, and this angle is 22.5 degree.
4. high density plasma chemical vapor deposition method as claimed in claim 1, it is characterized in that, wherein this first deposition step and this second deposition step are primary depositing circulation, and this deposition process also comprises and repeats this once above deposition cycle to form this film.
5. high density plasma chemical vapor deposition method as claimed in claim 4 is characterized in that, wherein when this time interval of 1/2, this wafer is rotated this angle.
6. high density plasma chemical vapor deposition method as claimed in claim 5 is characterized in that, wherein this deposition machine has 8 reacting gas delivery outlets, and this angle is 22.5 degree.
7. method of improving the film thickness uniformity of film, be applicable to a chemical gaseous phase depositing process, it is characterized in that, this method is to be in the process of deposition one film on the wafer, this wafer is rotated an angle, and make this film that finally is deposited on this wafer have uniform thickness, a deposition machine that wherein is used to deposit this film has n reacting gas delivery outlet, these reacting gas delivery outlets uniformly-spaced be configured in this wafer around, and the process that deposits this film is to experience a time interval altogether, and when this time interval of experience 1/m, this angle that this wafer rotated is 360/, and (m * n) degree, and this m and this n are positive integer.
8. the method for improving the film thickness uniformity of film as claimed in claim 7 is characterized in that, wherein when this time interval of 1/2, this wafer is rotated this angle.
9. the method for improving the film thickness uniformity of film as claimed in claim 8 is characterized in that, wherein this deposition machine has 8 reacting gas delivery outlets, and this angle is 22.5 degree.
10. the method for improving the film thickness uniformity of film as claimed in claim 7 is characterized in that, wherein this chemical gaseous phase depositing process comprises a high density plasma chemical vapor deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100824811A CN100401474C (en) | 2004-09-22 | 2004-09-22 | High density electro thick fluid chemical gaseous phase sedimentation process and method of improving film thickness unifomity |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100824811A CN100401474C (en) | 2004-09-22 | 2004-09-22 | High density electro thick fluid chemical gaseous phase sedimentation process and method of improving film thickness unifomity |
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| CN1753152A CN1753152A (en) | 2006-03-29 |
| CN100401474C true CN100401474C (en) | 2008-07-09 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270579A (en) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing shielding wafer |
| KR102346064B1 (en) * | 2014-03-12 | 2021-12-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Wafer rotation in a semiconductor chamber |
| CN108456865A (en) * | 2017-02-17 | 2018-08-28 | 北京北方华创微电子装备有限公司 | Membrane deposition method |
| CN108179388A (en) * | 2018-01-29 | 2018-06-19 | 京东方科技集团股份有限公司 | Method, the preparation method of touch base plate of sputtered layer are formed on substrate layer |
| CN108425102A (en) * | 2018-03-14 | 2018-08-21 | 上海华力集成电路制造有限公司 | The deposition method of interlayer film |
| CN112899616A (en) * | 2019-12-03 | 2021-06-04 | 上海新微技术研发中心有限公司 | Thin film deposition method |
| CN113186507B (en) * | 2021-07-05 | 2022-07-19 | 上海陛通半导体能源科技股份有限公司 | Method for improving film uniformity by optimizing distribution of multi-angle step-by-step deposition time |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2181458A (en) * | 1985-10-07 | 1987-04-23 | Epsilon Ltd Partnership | Apparatus and method for an axially symmetric chemical vapor deposition reactor |
| US4798156A (en) * | 1986-07-17 | 1989-01-17 | Geco A.S. | Arrangement for deployment of seismic cables |
| TW476133B (en) * | 2001-01-04 | 2002-02-11 | United Microelectronics Corp | Method for depositing undoped silicate glass |
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- 2004-09-22 CN CNB2004100824811A patent/CN100401474C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2181458A (en) * | 1985-10-07 | 1987-04-23 | Epsilon Ltd Partnership | Apparatus and method for an axially symmetric chemical vapor deposition reactor |
| US4798156A (en) * | 1986-07-17 | 1989-01-17 | Geco A.S. | Arrangement for deployment of seismic cables |
| TW476133B (en) * | 2001-01-04 | 2002-02-11 | United Microelectronics Corp | Method for depositing undoped silicate glass |
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