CN108456865A - Membrane deposition method - Google Patents
Membrane deposition method Download PDFInfo
- Publication number
- CN108456865A CN108456865A CN201710086741.XA CN201710086741A CN108456865A CN 108456865 A CN108456865 A CN 108456865A CN 201710086741 A CN201710086741 A CN 201710086741A CN 108456865 A CN108456865 A CN 108456865A
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- CN
- China
- Prior art keywords
- film
- thickness
- deposition method
- deposition
- technological parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
Abstract
The present invention provides a kind of membrane deposition methods, including：S1 presets the technological parameter of deposition first thickness film, is deposited under the technological parameter；S2 rotates by a certain angle the substrate level；S3 presets the technological parameter of deposition second thickness film, is deposited under the technological parameter；Above-mentioned steps S1~S3 is executed at least once, until the film of deposition preset thickness.The membrane deposition method can obtain the preferable film of thickness evenness.
Description
Technical field
The invention belongs to technical field of thin film deposition, and in particular to a kind of membrane deposition method.
Background technology
Fig. 1 is the structural schematic diagram of existing magnetron sputtering chamber, as shown in Figure 1, being provided in the magnetron sputtering chamber 1
The chuck 9 of carrying substrates 10, and it is arranged above target 4 in chuck 9, in sputtering, DC power supply can be biased to target
4, so that it is become negative pressure relative to the cavity of ground connection so that argon gas discharging and generate plasma, positively charged argon ion is inhaled
The target 4 for leading to back bias voltage can make metallic atom effusion target material surface and be deposited on substrate when the energy of argon ion is sufficiently high
On 10；It is arranged above magnetron 5 in target 4, is immersed in deionized water 3 at 4 back of target comprising there is phase
The interior outer magnetic pole of reversed polarity can form certain Distribution of Magnetic Field on 4 surface of target, which can force in plasma
Electronics is moved according to certain track, is increased electronics and is wanted the chance of the collision of ionized gas, obtain it is highdensity it is equal from
Daughter area is greatly improved sputter deposition rate, and is rotated by certain speed under the drive of motor 6；Using with one
Substrate 10 is mechanically pressed on chuck 9 and carries out sputtering technology by the metal clasp (Clamp Ring) 8 for determining weight.
It is asked in practical applications there are following by hardware impacts such as magnetron shapes using magnetron sputtering chamber shown in FIG. 1
Topic：The uniformity of the thickness of the film of deposition in the circumferential is very poor.
Invention content
It, can be with present invention seek to address that the technical problems existing in the prior art, provide a kind of deposition method of film
Improve the thickness evenness of film.
To solve one of the technical problems existing in the prior art, the present invention provides a kind of membrane deposition methods, including
Following steps：
S1 presets the technological parameter of deposition first thickness film, is deposited under the technological parameter；
S2 rotates by a certain angle substrate level；
S3 presets the technological parameter of deposition second thickness film, is deposited under the technological parameter；
Above-mentioned steps S1~S3 is executed at least once, until the film of deposition preset thickness.
Preferably, the first thickness is equal to second thickness.
Preferably, in step s 2, the substrate level is rotated 180 °.
Preferably, the film includes thin magnetic film.
Preferably, the thin magnetic film is ferronickel film.
Preferably, in the step S1 and step S3, technological parameter includes：Ranging from 1W~2000W of sputtering power.
Preferably, in the step S1 and step S3, technological parameter includes：Sputtering technology gas is argon gas, throughput
Ranging from 0.1sccm~200sccm.
Preferably, the membrane deposition method is deposited using thin film deposition chamber, and the thin film deposition chamber includes
Bias magnetic field device, for forming horizontal magnetic field in the chuck surface for carrying the substrate, which is used in substrate
Deposit the magnetic-film layer with intra-face anisotropy.
The present invention has following advantageous effects：
Membrane deposition method provided by the invention can change substrate by above-mentioned steps S1~S3 by rotary substrate
Different process environments residing for each region in circumferential direction, to compensate the film thickness of the deposition of each region in substrate circumferential direction
Difference, so as to improve the uniformity of film.
Description of the drawings
Fig. 1 is the structural schematic diagram of magnetron sputtering chamber；
Fig. 2 is the flow chart of membrane deposition method provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of deposition chambers used by membrane deposition method provided in an embodiment of the present invention.
Fig. 4 is the filminess figure after step S1 is completed；
Fig. 5 is the filminess figure after membrane deposition method is completed.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, the present invention is carried below in conjunction with the accompanying drawings
The membrane deposition method of confession is described in detail.
Fig. 2 is the flow chart of membrane deposition method provided in an embodiment of the present invention；Referring to Fig. 2, the embodiment of the present invention carries
The membrane deposition method of confession includes the following steps：
S1 presets the technological parameter of deposition first thickness film, is deposited under the technological parameter.
Wherein, the technological parameter for presetting deposition first thickness film refers to pre-setting to make substrate 10 in the ideal case
Each position thickness is the technological parameter of first thickness.
S2 rotates by a certain angle substrate level.
S3 presets the technological parameter of deposition second thickness film, is deposited under the technological parameter.
Wherein, the technological parameter for presetting deposition second thickness film refers to pre-setting to make substrate 10 in the ideal case
Each position thickness is the technological parameter of second thickness.
Above-mentioned steps S1~S3 is executed at least once, until the film of deposition preset thickness.
It is appreciated that membrane deposition method provided in an embodiment of the present invention can pass through rotation by above-mentioned steps S1~S3
Substrate changes the different process environments residing for each region in substrate circumferential direction, to compensate each region in substrate circumferential direction
The film thickness of deposition is poor, so as to improve the thickness evenness of film.
Preferably, membrane deposition method is deposited using thin film deposition chamber as shown in Figure 3, and thin film deposition chamber includes
Bias magnetic field device 7, for forming horizontal magnetic field on 9 surface of chuck of carrying substrates 10, which is used in substrate 10
Upper magnetic-film layer of the deposition with intra-face anisotropy.
It is appreciated that the magnetic-film layer of intra-face anisotropy can be obtained using the thin film deposition chamber, also, the present invention
The membrane deposition method that embodiment provides is deposited using the thin film deposition chamber, can be improved using the thin film deposition chamber
The film of deposition, therefore, can the problem of the side of substrate to other side thickness gradually increases (the first film 20 in such as Fig. 4)
To obtain the magnetic-film layer of the good intra-face anisotropy of thickness evenness.
Preferably, first thickness is equal to second thickness, in this way, the film deposited by step S3 can compensate step as much as possible
The thickness difference of film each region that rapid S1 is formed, in other words, it is last heavy to be compensated as much as possible by the film of this deposition
The thickness difference of long-pending film each region, to improve uniformity as much as possible.
Furthermore it is preferred that in step s 2, substrate 10 is rotated horizontally 180 °, this can be used in membrane deposition method
In the case that above-mentioned thin film deposition chamber is deposited, since the film using thin film deposition chamber deposition is in the side of substrate
Gradually increase (the first film 20 in such as Fig. 4) therefore to other side thickness, rotates 180 ° by substrate level, can make base
The most thick region of the film thickness of piece is moved in the most slow environmental area of deposition rate, the most thin region of the deposition thickness of substrate
It is moved in the most fast environment of deposition rate, thus film each region thickness difference that compensation process S1 as much as possible is formed.
Specifically, film can be but be not limited to thin magnetic film；Thin magnetic film can be but be not limited to ferronickel film.
In the case where film is ferronickel film, in step S1 and step S3, technological parameter includes：The model of sputtering power
It is trapped among 1W~2000W；Preferably, in step S1 and step S3, technological parameter includes：The range of sputtering power 500W~
1500W.In addition, in step S1 and step S3, technological parameter includes：Sputtering technology gas is argon gas, and the range of throughput exists
0.1sccm~200sccm；Preferably, in step S1 and step S3, technological parameter includes：Sputtering technology gas is argon gas, gas
The range of flow is in 1sccm~20sccm.
Membrane deposition method provided in an embodiment of the present invention is described in detail with reference to Fig. 4 and Fig. 5 citings, specifically,
It is deposited using thin film deposition chamber shown in Fig. 3,500nm ferronickel films, and is deposited by the way of magnetron sputtering
One thickness is identical with second thickness, is 250nm, and in step S2, substrate level rotates 180 °.
Concrete technology flow process is as follows：
The first step：Substrate is sent on the chuck 9 of chamber by manipulator, and chuck 9 rises and jacks up snap ring 8, in distance
Stop at (60mm) at a certain distance from target 4.
Second step：It is passed through the process gas Ar of 10sccm into processing chamber and conveys 20sccm's to the back side of substrate 10
Blowing Ar is carried on the back, the Ar stable gas pressures in 5s rear chamber are loading at this point, loading the DC power supply that power is 500W to target 4
Plasma can be generated in the case of power.
Third walks：It is continually fed into the process gas Ar of 10sccm and conveys back of the body blowing Ar to the back side of substrate 10, by DC
The power of power supply rises to 900W by 500W, and continues 200s, the sputtering of the first layer film of 250nm thickness is completed, in Fig. 4
The first film 20.
4th step：DC power supply is closed, conveying process gas and back of the body blowing are stopped.
5th step：Manipulator takes out the substrate for having sputtered 250nm films from processing chamber, and send to aligner (one
A mechanism that substrate can be rotated to special angle), substrate level is rotated 180 ° with aligner.
6th step：The substrate for having rotated 180 ° is sent to the chuck 9 of chamber, chuck 9 rises and jacks up snap ring 8,
Stop at (60mm) at a certain distance from target 4.
7th step：It is identical as second step, the process gas Ar of 10sccm and the back side to substrate are passed through into processing chamber
The back of the body blowing Ar of 20sccm, the Ar stable gas pressures in 5s rear chamber are conveyed, at this point, it is 500W's to load power to target 4
DC power supply can generate plasma in the case where loading power.
8th step：It is continually fed into the process gas Ar and back of the body blowing Ar of 10sccm, by the power of DC power supply by 500W
900W is risen to, and continues 200s, the sputtering of the second layer film of 250nm thickness is completed, such as the second film 30 in Fig. 5.
9th step：DC power supply is closed, conveying process gas and back of the body blowing are stopped.
So far the technique of sputtering 500nm films is completed, such as the superposition of the first film 20 and the second film 30 in Fig. 5.
Finally formed film is as shown in figure 5, the uniformity of the thickness of the film of deposition is fine.
It should be noted that, although membrane deposition method provided in an embodiment of the present invention is deposited using film shown in Fig. 3
Chamber is deposited, and the thickness that can well solve deposition film shown in Fig. 4 is gradually dropped from the side of substrate to the other side
Low problem；But the present invention is not limited thereto, and in practical applications, membrane deposition method provided by the invention not office
It is limited to apply in the thin film deposition chamber, can be applied in that solve uneven film thickness in other thin film deposition chambers even
The problem of, especially, preferably solve the problems, such as that uneven film thickness shown in Fig. 4 is even.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the original for not departing from the present invention
In the case of reason and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of membrane deposition method, which is characterized in that include the following steps：
S1 presets the technological parameter of deposition first thickness film, is deposited under the technological parameter；
S2 rotates by a certain angle substrate level；
S3 presets the technological parameter of deposition second thickness film, is deposited under the technological parameter；
Above-mentioned steps S1~S3 is executed at least once, until the film of deposition preset thickness.
2. membrane deposition method according to claim 1, which is characterized in that the first thickness is equal to second thickness.
3. membrane deposition method according to claim 1 or 2, which is characterized in that in step s 2, by the substrate level
180 ° of rotation.
4. membrane deposition method according to claim 1, which is characterized in that the film includes thin magnetic film.
5. membrane deposition method according to claim 4, which is characterized in that the thin magnetic film is ferronickel film.
6. membrane deposition method according to claim 5, which is characterized in that in the step S1 and step S3, technique
Parameter includes：Ranging from 1W~2000W of sputtering power.
7. membrane deposition method according to claim 5, which is characterized in that in the step S1 and step S3, technique
Parameter includes：Sputtering technology gas is argon gas, ranging from 0.1sccm~200sccm of throughput.
8. membrane deposition method according to claim 1, which is characterized in that the membrane deposition method is deposited using film
Chamber is deposited, and the thin film deposition chamber includes bias magnetic field device, in the chuck surface shape for carrying the substrate
The magnetic-film layer for being used to have intra-face anisotropy in deposition on substrate at horizontal magnetic field, the horizontal magnetic field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710086741.XA CN108456865A (en) | 2017-02-17 | 2017-02-17 | Membrane deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710086741.XA CN108456865A (en) | 2017-02-17 | 2017-02-17 | Membrane deposition method |
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|---|---|
| CN108456865A true CN108456865A (en) | 2018-08-28 |
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| CN201710086741.XA Pending CN108456865A (en) | 2017-02-17 | 2017-02-17 | Membrane deposition method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179388A (en) * | 2018-01-29 | 2018-06-19 | 京东方科技集团股份有限公司 | Method, the preparation method of touch base plate of sputtered layer are formed on substrate layer |
| CN111979531A (en) * | 2020-08-20 | 2020-11-24 | 江西展宇新能科技有限公司 | Method for prolonging service life of graphite boat |
| CN112899616A (en) * | 2019-12-03 | 2021-06-04 | 上海新微技术研发中心有限公司 | Thin film deposition method |
| TWI818433B (en) * | 2022-02-11 | 2023-10-11 | 翔名科技股份有限公司 | Film structure and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179388A (en) * | 2018-01-29 | 2018-06-19 | 京东方科技集团股份有限公司 | Method, the preparation method of touch base plate of sputtered layer are formed on substrate layer |
| CN112899616A (en) * | 2019-12-03 | 2021-06-04 | 上海新微技术研发中心有限公司 | Thin film deposition method |
| CN111979531A (en) * | 2020-08-20 | 2020-11-24 | 江西展宇新能科技有限公司 | Method for prolonging service life of graphite boat |
| TWI818433B (en) * | 2022-02-11 | 2023-10-11 | 翔名科技股份有限公司 | Film structure and manufacturing method thereof |
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Application publication date: 20180828 |
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