CN101748371A - Method for preparing insulating film attached to touch screen - Google Patents

Method for preparing insulating film attached to touch screen Download PDF

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Publication number
CN101748371A
CN101748371A CN200810244741A CN200810244741A CN101748371A CN 101748371 A CN101748371 A CN 101748371A CN 200810244741 A CN200810244741 A CN 200810244741A CN 200810244741 A CN200810244741 A CN 200810244741A CN 101748371 A CN101748371 A CN 101748371A
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China
Prior art keywords
torr
film
vacuum
nio
touch
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CN200810244741A
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Chinese (zh)
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CN101748371B (en
Inventor
陈奇
沈励
许沭华
石富银
迟晓晖
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Wuhu Token Sciences Co Ltd
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Wuhu Token Sciences Co Ltd
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Priority to CN2008102447419A priority Critical patent/CN101748371B/en
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Abstract

The invention discloses a method for preparing an insulating film attached to a touch screen. A magnetic control reactive sputtering method is used to generate chemical reaction on a touch screen substrate surface by Ni and O2 under a vacuum condition to deposit a layer of NiO film. The preparation method comprises the following steps: the degree of vacuum is 3 - 5x10-3Torr, substrate is heated to 70-80 DEG C, and the NiO film is deposited by magnetic control reactive sputtering. Compared with the prior art, the method is used to deposit the NiO film with nanometer thickness on the touch screen substrate surface. The NiO film has uniform film layer, compactness and good adhesion, so the insulating film has good insulation, anti-static and anti-shock performance. The film layer has good binding force and high permeation rate. The method is suitable for the industrial production of mobile phone LCD protection screens and insulating films of touch screens of home appliances.

Description

A kind of preparation is attached to the method for touch-screen upper nonconductive Film
Technical field
The present invention relates to the method for a kind of preparation attached to the touch-screen upper nonconductive Film.
Background technology
Surface attachment one deck insulating protective film of LCD of mobile phone liquid crystal protection screen and household appliances touch-screen, purpose are insulation, anti-electrostatic, anti-electric shock; Prior art institute coatings is a tin oxide film, but this metal oxide film instability, even produces variable color or defective such as peel off, and causes insulating film to lose efficacy, the consequence that touch-screen can't use.
Summary of the invention
It is stable that technical problem to be solved by this invention provides a kind of preparation rete, the method for the touch-screen insulating film of strong adhesion.
For achieving the above object, the technical scheme taked of the present invention is: the preparation method of described insulating film comprises: at vacuum degree in vacuum chamber is 3～5 * 10 -3Torr, heated substrate to 70～80 ℃ make the Ni and the O that place in the vacuum chamber 2Generate NiO, and at substrate surface deposition NiO film.
Described reactive magnetron sputtering deposition NiO film is finished through five vaccum intervals, and interval one gives that to vacuumize vacuum tightness be 4～5 * 10 -2Torr, interval two heated substrate vacuum tightnesss are 2～3 * 10 -3Torr; Interval three sputter coating vacuum tightnesss are 3～5 * 10 -3Torr,, interval four transition vacuum tightnesss are 2～3 * 10 -3Torr,, interval five unloading vacuum tightnesss are 4～5 * 10 -2Torr.
Its concrete processing condition are:
1) the Ni target adopts the direct supply bombardment, and power setting is 3～5KW; Anode voltage 400-500V;
2) vacuum chamber feeds O 2Flow be 2～10sccm; Feed gas Ar simultaneously, the Ar flow is 20～100sccm,
3) the pulse-repetition Hz of power supply.
In reactive sputtering process, because the non-etched area of target is being piled up the insulation layer that generates because of gas-phase reaction, and, finally cause the arc-over of target surface at a large amount of positive charge that this surface of insulating layer accumulates, cause making the film of growing produce major defect from target surface ejection drop.In reactive sputtering process, the external margin of magnetron cathode and anode on every side all are capped insulation layer in addition, and the anodic effect fades away, and plasma impedance constantly increases, and causes the processing parameter drift, produces the discharge quenching phenomenon even.Adopt above-mentioned processing condition just to solve these technical barriers, found a kind of simple effectively industrialized preparing process.
The pulse-repetition of described power supply is 400Hz.
The present invention compared with prior art, described insulating film be adopt reactive magnetron sputtering method on the touch screen base material surface by Ni and O 2Issue biochemical reactive deposition layer of Ni O film at vacuum state.The present invention goes out high quality, good, not easy to change, the uniform NiO rete of thickness of bonding force by processing parameters such as working vacuum degree, oxygen flow, sputter gas and envrionment temperature reasonably are set in the touch screen base material surface preparation; This even film layer, densification, sticking power are good, not only have good insulation properties, anti-electrostatic, anti-electric shock performance, and prepared insulating film has unique metallic luster; The present invention compared with prior art this rete has good bonding force and very high transmitance, is fit to the suitability for industrialized production of LCD of mobile phone liquid crystal protection screen and household appliances touch-screen insulating film.
Embodiment
Description below by to specific embodiment is described in further detail the specific embodiment of the present invention.
A kind of preparation is attached to the method for touch-screen upper nonconductive Film, described insulating film be adopt reactive magnetron sputtering method at the PMMA/PC substrate surface by Ni and O 2Issue biochemical reactive deposition layer of Ni O film at vacuum state.
Embodiment 1
1) screening PC/PMMA base material is with the chip of washed with de-ionized water removal base material periphery, hot blast drying then;
2) on the substrate frame with the base material load facility, tear the protective membrane on surface off, and carry out electrostatic precipitation;
3) substrate frame is sent into vacuum chamber and vacuumize, give vacuumizing earlier, vacuum tightness is 5 * 10 -2Torr;
4) enter vacuum chamber No. 2, vacuumize and reach 3 * 10 -3Torr, simultaneously heated substrate to 80 ℃;
5) substrate frame is sent into the sputter coating chamber, carried out pulse reaction sputtering sedimentation NiO film, vacuum tightness is 5 * 10 -3Torr, the pulse-repetition of power supply is 400HZ;
DC power supply (KW) The pulse power Anode voltage (V) Vacuum tightness (Torr) ??Ar/H 2??(sccm) ??O 2(sccm)
??5 Be ??500 ??3×10 -3 ??100/0 ??10
6) substrate frame is sent into transition chamber, vacuum tightness is 3 * 10 -3Torr;
7) substrate frame is sent into relief chamber, vacuum tightness is 5 * 10 -2Torr is cooled to 20 ℃ with base material.
Online quality test, the thickness of the sedimentary NiO of PMMA/PC substrate surface is 50nm, uses the insulation resistance of megohmmeter measure product, insulation resistance 1～5M Ω, bonding force 5B.Qualified packing.
Embodiment 2
Step 1) and step 2) and embodiment 1 is together;
3) substrate frame is sent into vacuum chamber, give vacuumizing earlier, vacuum tightness is 4 * 10 -2Torr;
4) enter vacuum chamber No. 2, be evacuated down to 2 * 10 -3Torr, simultaneously heated substrate to 70 ℃;
5) substrate frame is sent into the sputter coating chamber, carried out pulse reaction sputtering sedimentation NiO film; Vacuum tightness reaches 4 * 10 -3Torr, the pulse-repetition of power supply is set at 400HZ;
DC power supply (KW) The pulse power Anode voltage (V) Vacuum tightness (Torr) ??Ar/H 2??(sccm) ??O 2??(sccm)
??4.5 Be ??480 ??4×10 -3 ??20/0 ??2
6) substrate frame is sent into transition chamber, vacuum tightness is 3 * 10 -3Torr;
7) substrate frame is sent into relief chamber, vacuum tightness is 4 * 10 -2Torr is cooled to 20 ℃ with base material.
Online quality test, the thickness of PMMA/PC substrate surface NiO is 15nm, uses the insulation resistance of megohmmeter measure product, insulation resistance 10～15M Ω, bonding force 5B.Qualified packing.
Embodiment 3
Step 1) and step 2) and embodiment 1 is together;
3) substrate frame is sent into vacuum chamber, give vacuumizing earlier, vacuum tightness is 4 * 10 -2Torr;
4) enter vacuum chamber No. 2, be evacuated down to 3 * 10 -3Torr, simultaneously heated substrate to 75 ℃;
5) substrate frame is sent into the sputter coating chamber, carried out pulse reaction sputtering sedimentation NiO film; Vacuum tightness reaches 3 * 10 -3Torr, the pulse-repetition of power supply is set at 400HZ;
DC power supply (KW) The pulse power Anode voltage (V) Vacuum tightness (Torr) ??Ar/H 2??(sccm) ??O 2??(sccm)
??4 Be ??450 ??4.5×10 -3 ??50/0 ??5
6) substrate frame is sent into transition chamber, vacuum tightness is 2 * 10 -3Torr;
7) substrate frame is sent into relief chamber, vacuum tightness is 5 * 10 -2Torr is cooled to 20 ℃ with base material.
Online quality test, the thickness of the sedimentary NiO of PMMA/PC substrate surface is 25nm, uses the insulation resistance of megohmmeter measure product, insulation resistance 50～65M Ω, bonding force 5B.Qualified packing.
Embodiment 4
Step 1) and step 2) and embodiment 1 is together;
3) substrate frame is sent into vacuum chamber, give vacuumizing earlier, vacuum tightness is 5 * 10 -2Torr
4) enter vacuum chamber No. 2, be evacuated down to 3 * 10 -3Torr, simultaneously heated substrate to 80 ℃;
5) substrate frame is sent into the sputter coating chamber, carried out pulse reaction sputtering sedimentation NiO film; Vacuum tightness reaches 3 * 10 -3Torr, the pulse-repetition of power supply is set at 400HZ;
DC power supply (KW) The pulse power Anode voltage (V) Vacuum tightness (Torr) ??Ar/H 2??(sccm) ??O 2(sccm)
??3 Be ??400 ??5×10 -3 ??80/0 ??8
6) substrate frame is sent into transition chamber, vacuum tightness is 3 * 10 -3Torr;
7) substrate frame is sent into relief chamber, vacuum tightness is 5 * 10 -2Torr is cooled to 20 ℃ with base material.
Online quality test, the thickness of the sedimentary NiO of PMMA/PC substrate surface is 30nm, uses the insulation resistance of megohmmeter measure product, insulation resistance 1～5M Ω, bonding force 5B.Qualified packing.
Embodiment 5
Step 1) and step 2) and embodiment 1 is together;
3) substrate frame is sent into vacuum chamber, give vacuumizing earlier, vacuum tightness is 4 * 10 -2Torr;
4) enter vacuum chamber No. 2, be evacuated down to 2 * 10 -3Torr, simultaneously heated substrate to 70 ℃;
5) substrate frame is sent into the sputter coating chamber, carried out pulse reaction sputtering sedimentation NiO film; Vacuum tightness reaches 4 * 10 -3Torr, the pulse-repetition of power supply is set at 400HZ;
DC power supply (KW) The pulse power Anode voltage (V) Vacuum tightness (Torr) ??Ar/H 2??(sccm) ??O 2??(sccm)
??10 Be ??450 ??3.5×10 -3 ??90/0 ??9
6) substrate frame is sent into transition chamber, vacuum tightness is 3 * 10 -3Torr;
7) substrate frame is sent into relief chamber, vacuum tightness is 5 * 10 -2Torr is cooled to 20 ℃ with base material.
Online quality test, the thickness of the sedimentary NiO of PMMA/PC substrate surface is 40nm, uses the insulation resistance of megohmmeter measure product, insulation resistance 50～65M Ω, bonding force 5B.Qualified packing.
The present invention can use without prejudice to the specific form of spirit of the present invention or principal character and summarize.Above-mentioned embodiment only is can not limit the present invention to explanation of the present invention, and therefore, implication suitable with claims of the present invention and any change in the scope all should be thought to be included in the scope of claims.

Claims (4)

1. method for preparing attached to the touch-screen upper nonconductive Film, it is characterized in that: at vacuum degree in vacuum chamber is 3～5x10 -3Under the Torr condition, heated substrate to 70～80 ℃ adopt the reactive magnetron sputtering method to make Ni and the O that places in the vacuum chamber 2Generate NiO, and be deposited as the NiO rete at substrate surface.
2. a kind of preparation according to claim 1 is characterized in that attached to the method for touch-screen upper nonconductive Film: described reactive magnetron sputtering deposition NiO film, through five vaccum intervals, interval one is given and vacuumized vacuum tightness is 4～5x10 -2Torr, interval two heated substrate vacuum tightnesss are 2～3x10 -3Torr; Interval three sputter coating vacuum tightnesss are 3～5x10 -3Torr,, interval four transition vacuum tightnesss are 2～3x10 -3Torr,, interval five unloading vacuum tightnesss are 4～5x10 -2Torr.
3. a kind of preparation according to claim 1 and 2 is characterized in that attached to the method for touch-screen upper nonconductive Film: described reactive magnetron sputtering deposition NiO film, and its concrete processing condition are:
1) the Ni target adopts the direct supply bombardment, and power setting is 3～5KW; Anode voltage 400-500V;
2) vacuum chamber feeds O 2Flow be 2～10sccm; Feed gas Ar simultaneously, the Ar flow is 20～100sccm,
3) the pulse-repetition 300～500Hz of power supply.
4. a kind of preparation according to claim 3 is attached to the method for touch-screen upper nonconductive Film, and it is characterized in that: the pulse-repetition of described power supply is 400Hz.
CN2008102447419A 2008-12-16 2008-12-16 Method for preparing insulating film attached to touch screen Expired - Fee Related CN101748371B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008102447419A CN101748371B (en) 2008-12-16 2008-12-16 Method for preparing insulating film attached to touch screen

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Application Number Priority Date Filing Date Title
CN2008102447419A CN101748371B (en) 2008-12-16 2008-12-16 Method for preparing insulating film attached to touch screen

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CN101748371A true CN101748371A (en) 2010-06-23
CN101748371B CN101748371B (en) 2011-11-09

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105225845A (en) * 2015-10-20 2016-01-06 国家纳米科学中心 A kind of electrode material for super capacitor and preparation method thereof
CN105970165A (en) * 2016-05-17 2016-09-28 杭州朗旭新材料科技有限公司 Black insulating film element and manufacturing method thereof
CN104078238B (en) * 2014-07-08 2017-01-04 天津大学 A kind of preparation method of high tuning voltage-controlled transparent Indium nickel thin film capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078238B (en) * 2014-07-08 2017-01-04 天津大学 A kind of preparation method of high tuning voltage-controlled transparent Indium nickel thin film capacitor
CN105225845A (en) * 2015-10-20 2016-01-06 国家纳米科学中心 A kind of electrode material for super capacitor and preparation method thereof
CN105225845B (en) * 2015-10-20 2018-01-23 国家纳米科学中心 A kind of electrode material for super capacitor and preparation method thereof
CN105970165A (en) * 2016-05-17 2016-09-28 杭州朗旭新材料科技有限公司 Black insulating film element and manufacturing method thereof

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