CN101864557A - Method for preparing transparent conductive film - Google Patents
Method for preparing transparent conductive film Download PDFInfo
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- CN101864557A CN101864557A CN200910266184A CN200910266184A CN101864557A CN 101864557 A CN101864557 A CN 101864557A CN 200910266184 A CN200910266184 A CN 200910266184A CN 200910266184 A CN200910266184 A CN 200910266184A CN 101864557 A CN101864557 A CN 101864557A
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Abstract
The invention discloses a method for preparing an AZO (Al-Doped ZnO) film by utilizing multi arc ion plating technology. The AZO material is taken as a target, and the dripless multi arc ion plating technology is adopted, and the AZO film with excellent optical and electric properties, binding force and the like is deposited on glass, plastics or other substrates. The invention provides a method for preparing the AZO film with simple structure, low cost and excellent performance.
Description
Technical field
The present invention relates to the preparation method of transparent conductive film, particularly relate to be tied cathode arc discharge of a kind of utilization and prepare the method for AZO (Al-Doped ZnO) film.
Background technology
In modern industry, (TCO) is of many uses for transparent conductive oxide film, especially as transparency electrode, is that various flat boards, liquid-crystal display and thin-film solar cells etc. are produced indispensable important raw and processed materials; Owing to have functions such as low radiation, heat reflection, anti-electrostatic, electromagnetic shielding, can be widely used in fields such as building, instrument; In addition, can also be used as heating panel, gas sensor, stealth material etc.
The TCO film that is applied to the flat-panel display device transparency electrode mainly is ITO (In
2O
3: Sn) film.But, 1, because In
2O
3Cost an arm and a leg, cause the ito thin film production cost very high; 2, the In material is poisonous, and is harmful in preparation and application process; 3, in the ITO film process, Sn penetrates into substrate interior easily, poisons substrate material, has a strong impact on the quality of products such as display device.Therefore, along with appearance, development, the maturation of electrically conducting transparent AZO of new generation (ZnO:Al) thin film technique, the application of AZO film is with develop rapidly.Compare with the ITO film, the material cost of AZO film has only about 1/100 of ITO, and performances such as the optical transmittance of AZO (Al-Doped ZnO) film, conduction near or surmount the performance of ito thin film.
Current, the most frequently used industrial production process of AZO (Al-Doped ZnO) film is a magnetron sputtering, and general using AZO material comprises d.c. sputtering, middle RF sputtering etc. as target.Magnetron sputtering deposition AZO film requires highly to equipment, starting material, processing parameter etc., otherwise can't obtain qualified AZO film.
Summary of the invention
The purpose of this invention is to provide a kind of vacuum coating film equipment and Technology and on glass or other substrate, deposit AZO (Al-Doped ZnO) film.The novel constraint cathode arc discharge that is specially industrialization on a large scale prepares the method for AZO film.Utilize this method to produce the AZO film to have that equipment is simple, process stabilizing, quality product is excellent, production efficiency is high, cost is low, can realize low temperature depositing, plurality of advantages such as can deposit on flexible substrate and thermo-labile substrate, is expected to become the main method of scale production AZO film of new generation.
Since Wang Dianru professor invention multi-arc ion coating technology, multi-arc ion coating is used widely, and the present technique basis is the multi-arc ion coating technology.
Employed equipment is on traditional multi-arc ion plating film Equipment Foundations, at AZO (Al-Doped ZnO) target characteristics, in order to eliminate macrobead deposition etc. and taked multiple measure.
Concrete measure is as follows, and 1, target.Utilize Cu as substrate, AZO (Al-Doped ZnO) target is welded on the Cu plate finishes; 2, baffle plate.At 10-20cm place, cathode arc source the place ahead, install netted baffle plate additional, as supplementary anode and macrobead evaporant filtering net; 3, other.
Under aforesaid device condition, the processing parameter of finishing AZO (Al-Doped ZnO) plated film is: highest attainable vacuum,＜7 * 10
-3Pa; Working gas, argon gas and oxygen, wherein Ar/O2=10: (1-5); Operating pressure, (1-10) * 10
-1Pa; Sedimentary environment temperature, 50-350 ℃; Substrate is to cathode arc source spacing, 20-60cm; Depositing time, 5-60min.
Further, we have invented the multi sphere coating film production line equipment that is specifically applied to AZO (Al-Doped ZnO), comprise tinuous production and single stove filming equipment.
Single furnace apparatus designed, that make is characterized as: single chamber, a plurality of arcs source, arc source according to spiral or staggered, can be installed 1 to dozens of arc source according to the plating chip area on the sidewall of chamber; Substrate is fixed on the substrate frame, at the chamber internal rotation.
Tinuous production designed, that make is characterized as: core group becomes the multi sphere coating chamber, and in the coating chamber, spiral is installed in a plurality of arcs source, being interspersed is installed in one-sided or bilateral, in order to finish single face or double-sided coating; Substrate can movement continuously on a travelling belt, turnover multi sphere coating chamber; Before and after the multi sphere coating chamber, be useful on the vacuum chamber of protection coating chamber vacuum, ion cleaning substrate, heating or cooling substrate.
Description of drawings
Fig. 1, target characteristic pattern. Among the figure, 1:AZO (Al-Doped ZnO) target; 2, AZO and Cu substrate connector; 3, Cu substrate
AZO (Al-Doped ZnO) target 1 is cylinder, and diameter is identical with traditional multi-arc source target diameter, thickness 10-30mm; Utilize welding, be threaded or bolt interconnection technique 2; Link together with Cu substrate 3; Cu substrate bottom is processed with screw thread etc., is threaded connection together with multi-arc source.
Fig. 2, baffle plate characteristic pattern. Among the figure, 1: multi-arc source; 2: baffle plate; 3: the evaporation bulky grain; 4: the evaporation small-particle.
From the particle that multi-arc source 1 is evaporated, bulky grain 3, small-particle 4 etc. are arranged, during by baffle plate 2, bulky grain 3 is blocked and can't passes, and only has small-particle to pass and is deposited on the substrate.
Fig. 3, AZO (Al-Doped ZnO) Film Optics transmitance figure. Among the figure, transverse axis is wavelength, and the longitudinal axis is transmitance.
As we know from the figure, AZO (Al-Doped ZnO) film surpasses 88% in the transmitance of visible region.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
Embodiment 1:
The special-purpose experimental machine of company, the multiple arc target of AZO (Al-Doped ZnO) material preparation is as shown in Figure 1; Glass substrate uses through alcohol ultrasonic cleaning, oven dry back; Between substrate and cathode arc source, baffle plate such as Fig. 2 are installed; Substrate is 35cm to the spacing of cathode arc source; Coating process is: depositing temperature, 180 ℃; Highest attainable vacuum,＜7 * 10
-3Pa; Working gas, argon gas and oxygen, wherein Ar/O
2=10: 1; Operating pressure, 6 * 10
-1Pa; Depositing time, 15min.Optics, electric property analysis revealed, gained AZO film surpasses 88% (Fig. 3) in the transmitance of visible region, and square resistance is less than 30 Ω/.
Claims (6)
1. an AZO (Al-Doped ZnO) method for manufacturing thin film is characterized in that adopting the AZO material as target and disappear the multi-arc ion coating technology of dripping, the AZO film that obtains superior performance under proper technical conditions
2. the multi-arc ion coating technology that disappears and drip as claimed in claim 1 is characterized by, and is added with baffle plate in multi sphere ion source the place ahead
3. according to claim 1, the target that adopts of multi sphere source is for seeing through welding with AZO (Al-Doped ZnO) target, inlaying or alternate manner is connected on the Cu substrate and forms
4. as described in requiring as right 1, the processing condition of being taked are: highest attainable vacuum,＜7 * 10
-3Pa; Working gas, argon gas and oxygen, wherein Ar/O2=10: (1-10); Operating pressure, (1-10) * 10
-1Pa; Sedimentary environment temperature, 50-450 ℃; Substrate is to cathode arc source spacing, 20-200cm; Depositing time, 5-60min.
5. according to claim 1, be not only AZO (Al-Doped ZnO) film, be target, utilize the multi-arc ion coating technology, on any substrate, prepare transparent conductive film, all within the scope of the present invention with other transparent conductive material
6. according to claim 1, any multi-arc ion coating film device that is exclusively used in TCO (transparent conductive oxide) membrane prepare, regardless of different kinds of, comprise continuous, semicontinuous and the single chamber filming equipment, all within the scope of the invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910266184A CN101864557A (en) | 2009-12-31 | 2009-12-31 | Method for preparing transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910266184A CN101864557A (en) | 2009-12-31 | 2009-12-31 | Method for preparing transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101864557A true CN101864557A (en) | 2010-10-20 |
Family
ID=42956475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910266184A Pending CN101864557A (en) | 2009-12-31 | 2009-12-31 | Method for preparing transparent conductive film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031524A (en) * | 2012-12-14 | 2013-04-10 | 中国船舶重工集团公司第七二五研究所 | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition |
| CN103203912A (en) * | 2012-01-12 | 2013-07-17 | 上海北玻玻璃技术工业有限公司 | Novel AZO coated glass and preparation technology thereof |
-
2009
- 2009-12-31 CN CN200910266184A patent/CN101864557A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103203912A (en) * | 2012-01-12 | 2013-07-17 | 上海北玻玻璃技术工业有限公司 | Novel AZO coated glass and preparation technology thereof |
| CN103203912B (en) * | 2012-01-12 | 2016-08-24 | 上海北玻玻璃技术工业有限公司 | A kind of new A ZO coated glass and preparation technology thereof |
| CN103031524A (en) * | 2012-12-14 | 2013-04-10 | 中国船舶重工集团公司第七二五研究所 | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition |
| CN103031524B (en) * | 2012-12-14 | 2014-11-05 | 中国船舶重工集团公司第七二五研究所 | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition |
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Open date: 20101020 |