CN102352480A - Preparation method of transparent conductive film - Google Patents
Preparation method of transparent conductive film Download PDFInfo
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- CN102352480A CN102352480A CN2011103278551A CN201110327855A CN102352480A CN 102352480 A CN102352480 A CN 102352480A CN 2011103278551 A CN2011103278551 A CN 2011103278551A CN 201110327855 A CN201110327855 A CN 201110327855A CN 102352480 A CN102352480 A CN 102352480A
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- transparent conductive
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Abstract
The invention discloses a method for preparing an aluminum doped zinc oxide (AZO) film by utilizing the multi-arc ion plating technology. The AZO material is used as the target material and the anti-drip multi-arc ion plating technology is adopted to deposit an AZO film with excellent optical properties, electrical properties, binding force and the like on substrates such as glass and plastics. The invention provides the preparation method of the AZO film with a simple structure, low cost and excellent performances.
Description
Technical field
The present invention relates to the preparation method of transparent conductive film, particularly relate to be tied cathode arc discharge of a kind of utilization and prepare the method for AZO (Al-Doped ZnO) film.
Background technology
In the industry, (TCO) is of many uses for transparent conductive oxide film in modern times, especially as transparency electrode, is that various flat boards, liquid-crystal display and thin-film solar cells etc. are produced indispensable important raw and processed materials; Owing to have functions such as low radiation, heat reflection, anti-electrostatic, electromagnetic shielding, can be widely used in fields such as building, instrument; In addition, can also be used as heating panel, gas sensor, stealth material etc.
The TCO film that is applied to the flat-panel display device transparency electrode mainly is ITO (In
2O
3: Sn) film.But, 1, because In
2O
3Cost an arm and a leg, cause the ito thin film production cost very high; 2, the In material is poisonous, and is harmful in preparation and application process; 3, in the ITO film process, Sn penetrates into substrate interior easily, poisons substrate material, has a strong impact on the quality of products such as display device.Therefore, along with appearance, development, the maturation of electrically conducting transparent AZO of new generation (ZnO:Al) thin film technique, the application of AZO film is with develop rapidly.Compare with the ITO film, the material cost of AZO film has only about 1/100 of ITO, and performances such as the optical transmittance of AZO (Al-Doped ZnO) film, conduction near or surmount the performance of ito thin film.
Current, the most frequently used industrial production process of AZO (Al-Doped ZnO) film is a magnetron sputtering, and general using AZO material comprises d.c. sputtering, middle RF sputtering etc. as target.Magnetron sputtering deposition AZO film requires highly to equipment, starting material, processing parameter etc., otherwise can't obtain qualified AZO film.
Summary of the invention
The purpose of this invention is to provide a kind of vacuum coating film equipment and Technology and on glass or other substrate, deposit AZO (Al-Doped ZnO) film.The magnetic confinement cathode arc discharge that is specially industrialization on a large scale prepares the method for AZO film.Utilize this method to produce the AZO film to have that equipment is simple, process stabilizing, quality product is excellent, production efficiency is high, cost is low, can realize low temperature depositing, plurality of advantages such as can on flexible substrate and thermo-labile substrate, deposit, and is expected to become the main method of scale production AZO film of new generation.
Employed equipment is on traditional magnetic confinement multi-arc ion plating film Equipment Foundations, to AZO (Al-Doped ZnO) target characteristics, in order to eliminate macrobead deposition etc. and taked multiple measure.
Concrete measure is like target 1.Utilize Cu as substrate, AZO (Al-Doped ZnO) target is welded on the Cu plate accomplishes; 2, baffle plate.At 10-20cm place, cathode arc source the place ahead, install netted baffle plate additional, as supplementary anode and macrobead evaporant filtering net.
Under aforesaid device condition, the processing parameter of accomplishing AZO (Al-Doped ZnO) plated film is: highest attainable vacuum,＜7 * 10
-3Pa; Working gas, argon gas and oxygen, wherein Ar/O2=10: (1-5); Operating pressure, (1-10) * 10
-1Pa; Sedimentary environment temperature, 50-350 ℃; Substrate is to cathode arc source spacing, 20-60cm; Depositing time, 5-60min.
Under aforesaid device and processing condition, resulting AZO film characteristics is: 1, sheet resistance, 1-500 Ω/cm
2, can more change in the wide region through change thicknesses of layers, Al doping; 2, transmitance, the average transmittances of visible region surpasses 80%, can further change according to demand.
Further, we have invented the multi sphere coating film production line equipment that is specifically applied to AZO (Al-Doped ZnO), comprise tinuous production and single stove filming equipment.
The single furnace apparatus that designs, makes is characterized as: single chamber, a plurality of arcs source, arc source according to spiral or staggered, can be installed 1 to dozens of arc source according to the plating chip area on the sidewall of chamber; Substrate is fixed on the substrate frame, at the chamber internal rotation.
The tinuous production that designs, makes is characterized as: core group becomes the multi sphere coating chamber, and in the coating chamber, spiral is installed in a plurality of arcs source, being interspersed is installed in one-sided or bilateral, in order to accomplish single face or double-sided coating; Substrate can movement continuously on a travelling belt, turnover multi sphere coating chamber; Before and after the multi sphere coating chamber, be useful on the vacuum chamber of protection coating chamber vacuum, ion cleaning substrate, heating or cooling substrate.
Description of drawings
Fig. 1, target characteristic pattern.Among the figure, 1:AZO (Al-Doped ZnO) target; 2, AZO and Cu substrate linker; 3, Cu substrate
AZO (Al-Doped ZnO) target 1 is a right cylinder, and diameter is identical with traditional multi sphere source target diameter, thickness 10-30mm; Utilize welding, be threaded or bolt interconnection technique 2; Link together with Cu substrate 3; Cu substrate bottom is processed with screw thread etc., with the multi sphere source through being threaded togather.
Fig. 2, baffle plate characteristic pattern.Among the figure, 1: the multi sphere source; 2: baffle plate; 3: the evaporation macrobead; 4: the evaporation small-particle.
From the particle that multi sphere source 1 is evaporated, macrobead 3, small-particle 4 etc. are arranged, during through baffle plate 2, macrobead 3 is blocked and can't passes, and has only small-particle to pass and is deposited on the substrate.
Fig. 3, AZO (Al-Doped ZnO) Film Optics transmitance figure.Among the figure, transverse axis is a wavelength, and the longitudinal axis is a transmitance.
Can know that from figure AZO (Al-Doped ZnO) film surpasses 88% in the transmitance of visible region.
Embodiment
Below in conjunction with specific embodiment the present invention is described further.
Embodiment 1:
The special-purpose experimental machine of company, the multiple arc target of AZO (Al-Doped ZnO) material preparation is as shown in Figure 1; Glass substrate uses through alcohol ultrasonic cleaning, oven dry back; Between substrate and cathode arc source, baffle plate such as Fig. 2 are installed; Substrate is 35cm to the spacing of cathode arc source; Coating process is: depositing temperature, 180 ℃; Highest attainable vacuum,＜7 * 10
-3Pa; Working gas, argon gas and oxygen, wherein Ar/O
2=10: 1; Operating pressure, 6 * 10
-1Pa; Depositing time, 15min.Optics, electric property analysis revealed, gained AZO film surpasses 88% (Fig. 3) in the transmitance of visible region, and square resistance is less than 30 Ω/.The surface topography analysis revealed: the particle in the gained AZO film is less than 1 micron (Fig. 4).
Claims (6)
1. an AZO (Al-Doped ZnO) method for manufacturing thin film is characterized in that adopting the AZO material as target and disappear the multi-arc ion coating technology of dripping, the AZO film that under proper technical conditions, obtains superior performance.
2. the multi-arc ion coating technology that disappears and drip as claimed in claim 1 is characterized by, and is added with baffle plate in multi sphere ion source the place ahead.
3. according to claim 1, the target that adopts of multi sphere source is for seeing through welding with AZO (Al-Doped ZnO) target, inlaying or alternate manner is connected on the Cu substrate and forms.
4. as described in requiring like right 1, the processing condition of being taked are: highest attainable vacuum,＜7 * 10
-3Pa; Working gas, argon gas and oxygen, wherein Ar/O2=10: (1-10); Operating pressure, (1-10) * 10
-1Pa; Sedimentary environment temperature, 50-450 ℃; Substrate is to cathode arc source spacing, 20-200cm; Depositing time, 5-60min.
5. according to claim 1, be not only AZO (Al-Doped ZnO) film, be target, utilize the multi-arc ion coating technology, on any substrate, prepare transparent conductive film, all within the scope of the present invention with other transparent conductive material.
6. according to claim 1, any multi-arc ion coating film device that is exclusively used in TCO (transparent conductive oxide) membrane prepare, regardless of different kinds of, comprise continuous, semicontinuous and the single chamber filming equipment, all within the scope of the invention.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103278551A CN102352480A (en) | 2011-10-25 | 2011-10-25 | Preparation method of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103278551A CN102352480A (en) | 2011-10-25 | 2011-10-25 | Preparation method of transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102352480A true CN102352480A (en) | 2012-02-15 |
Family
ID=45576115
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|---|---|---|---|
| CN2011103278551A Pending CN102352480A (en) | 2011-10-25 | 2011-10-25 | Preparation method of transparent conductive film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031524A (en) * | 2012-12-14 | 2013-04-10 | 中国船舶重工集团公司第七二五研究所 | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition |
-
2011
- 2011-10-25 CN CN2011103278551A patent/CN102352480A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031524A (en) * | 2012-12-14 | 2013-04-10 | 中国船舶重工集团公司第七二五研究所 | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition |
| CN103031524B (en) * | 2012-12-14 | 2014-11-05 | 中国船舶重工集团公司第七二五研究所 | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition |
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Application publication date: 20120215 |