CN115418629B - Method for thin film deposition - Google Patents
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- CN115418629B CN115418629B CN202210988828.7A CN202210988828A CN115418629B CN 115418629 B CN115418629 B CN 115418629B CN 202210988828 A CN202210988828 A CN 202210988828A CN 115418629 B CN115418629 B CN 115418629B
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 239000010408 film Substances 0.000 claims abstract description 83
- 238000000151 deposition Methods 0.000 claims abstract description 56
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 230000008021 deposition Effects 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 102000044159 Ubiquitin Human genes 0.000 description 1
- 108090000848 Ubiquitin Proteins 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006446 extruder reaction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
Providing a reaction chamber with N stations, wherein each station is provided with a substrate, the N substrates can circularly move in the N stations, two adjacent stations are selected as a first station and a second station in the N stations, the first station and the second station are used for depositing a first film, and the other stations are respectively a third station to an N station and are respectively used for depositing a second film to an N-1 film; a first thin film deposition step of synchronously depositing the first thin film on two substrates at a first station and a second station; and depositing second to N-1 th thin films on the substrates on which the first to N-2 th thin films have been deposited, respectively, at third to N-th stations.
Description
Technical Field
The present application relates to the field of semiconductor technology, and in particular, to a method for depositing a thin film.
Background
Ion enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) techniques are widely used in the fabrication of integrated circuits. In order to improve the production efficiency, a reaction chamber with multiple task positions, such as a reaction chamber of a Vector extruder developed by Panlin group (LAM research), is developed, and is provided with four stations for placing four substrates (wafers), the four substrates are circularly moved in adjacent stations by rotating the four substrates, and different materials can be respectively deposited in the four stations to realize continuous deposition, so that the production efficiency is improved.
The above-described reactor chamber currently supports an nxm deposition mode, where N is the number of substrates transferred per rotation, and in the existing mode N is 2, the substrates can be rotated 90 degrees or 180 degrees each time toward adjacent stations; m is the number of times each substrate is deposited, each station can deposit the same material, or two stations are in a pair, two pairs deposit different materials, or all stations deposit different materials, so that M can be 4, 2 or 1, i.e. the existing Vector extruder reaction chamber can deposit one, two or four layers of materials.
Certain layers of materials with specific functions, such as metal-insulator-metal (Metal insulator metal layer, MIM layer) as capacitors, have special requirements for the process during the deposition process, and it is necessary to maintain a vacuum environment during the deposition of these three layers, so that the three layers of deposition process needs to be performed in the same reaction chamber, and the multi-task deposition process of the Vector extruder of the panting group can implement the three layers of deposition process.
In the prior art, as shown in fig. 1, a three-layer deposition process is implemented by using a Vector extremum machine of panting group, a first station 1, a second station 2 and a third station 3 of a reaction chamber C are respectively used for depositing a silicon dioxide film, a silicon oxynitride film and a silicon nitride film, and a fourth station 4 is only used for loading or unloading a substrate. FIG. 2 is a schematic diagram of a conventional three-layer deposition process using a Vector extruder. Two substrates S are loaded on the first station 1 and the fourth station 4 each time, then four substrates S are respectively and synchronously deposited with a silicon dioxide film, a silicon oxynitride film and a silicon nitride film on the substrates S in the first station 1, the second station 2 and the third station 3 respectively through twice synchronization, and the four substrates S are moved to the adjacent stations through rotating by 90 degrees after each film deposition, so that the process of depositing three layers of films on the substrates is realized.
Although the above-mentioned conventional process can be used to deposit three layers of thin films on the substrate, the fourth station 4 is only used to load or unload the substrate S, and is not used to deposit thin films, which results in idle stations, thereby reducing the utilization rate of the machine and possibly affecting the stability of the process.
Disclosure of Invention
The embodiment of the application provides a film deposition method, which is used for solving the problems that the utilization rate of a machine is reduced and the process stability is influenced due to station idling in the prior art.
In order to solve the technical problems, the application is realized as follows:
providing a reaction cavity with N stations, wherein each of the N stations is provided with a substrate, the N substrates can circularly move in the N stations, two adjacent stations are selected as a first station and a second station in the N stations, the first station and the second station are used for depositing a first film, and the other stations are respectively a third station to an N station and are respectively used for depositing a second film to an N-1 film; a first thin film deposition step of synchronously depositing the first thin film on two substrates at a first station and a second station; and a further film deposition step of depositing second to N-1 th films on the substrates on which the first to N-2 th films have been deposited, respectively, at the third to N-th stations.
Optionally, in some embodiments, n=4, the other thin film deposition steps further comprise a second thin film deposition step of depositing a second thin film on the substrate on which the first thin film has been deposited at a third station; and a third thin film deposition step of depositing a third thin film on the substrate on which the second thin film has been deposited at a fourth station.
Optionally, in some embodiments, a substrate loading and unloading step is further included to move the two substrates from the first station and the fourth station into or out of the reaction chamber.
Optionally, in some embodiments, the substrate loading and unloading step is followed by a first moving step of moving the four substrates in the same direction to adjacent stations.
Optionally, in some embodiments, a second moving step is included after the first moving step, the four substrates being moved in the same direction to adjacent stations.
Optionally, in some embodiments, the first thin film deposition step, the second thin film deposition step, and the third thin film deposition step are performed simultaneously between the first moving step and the second moving step.
Optionally, in some embodiments, the substrate loading and unloading step is preceded by an initial loading step of moving two substrates into the first and fourth stations of the reaction chamber in a state in which the substrates are not placed at the four stations of the reaction chamber.
Optionally, in some embodiments, the initial unloading step is followed by an initial stage first movement step of moving the two substrates in the same direction to the second station and the first station.
Optionally, in some embodiments, the first thin film deposition step is performed between an initial stage first movement step and an initial stage second movement step.
Optionally, in some embodiments, the first thin film deposition step is followed by an initial second movement step of moving the two substrates in the same direction to a third station and a second station.
Optionally, in some embodiments, a second thin film deposition step is performed between the initial second movement step and the substrate loading and unloading step.
The film deposition method of the application realizes the process of depositing the N-1 layer film on the substrate in a non-idle station mode by synchronously depositing the first film on the substrate at the first station and the second station, depositing the second film on the substrate on which the first film is deposited at the third station, depositing the third film on the substrate on which the second film is deposited at the fourth station, and depositing the N-1 layer film on the substrate on which the N-2 layer film is deposited at the N station.
In addition, after the substrate is loaded, the substrate is rotated and moved to the adjacent stations, then the first film deposition step, the second film deposition step and the third film deposition step are synchronously implemented, the substrate is rotated and moved to the adjacent stations again, and then the second film deposition step and the third film deposition step are synchronously implemented, so that the three-layer film deposition process can be realized only by implementing five film deposition steps, and compared with the conventional Vector extruder, the three-layer film deposition process can be realized only by implementing the first film, the second film and the third film deposition steps twice synchronously, and the three-layer film deposition process can be more saved, thereby saving the manufacturing time of the three-layer film deposition.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic diagram of a station configuration of a prior art four-station reaction chamber and a station for three material depositions;
FIG. 2 is a prior art method of achieving three-layer thin film deposition with the four-station reaction chamber of FIG. 1;
FIG. 3 is a schematic diagram of a station configuration of N station reaction chambers and stations for depositing N-1 materials according to one embodiment of the present application;
FIGS. 4 and 5 are schematic diagrams of a method for implementing N-1 thin film deposition without idle stations in N station reaction chambers according to an embodiment of the present application;
FIGS. 6, 7 and 8 are flow charts of methods for N-1 thin film deposition without idle stations in N-station process chambers according to one embodiment of the present application.
1, a first station; 2, a second station; 3, a third station; 4, a fourth station; the reaction cavity S is a substrate; s': a substrate on which a first thin film has been deposited; s', a substrate on which a second film is deposited; s' "is the substrate on which the third film has been deposited.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
Referring to fig. 3, fig. 4, and fig. 5, fig. 3 is a schematic diagram of a station configuration of N station reaction chambers and stations for depositing N-1 materials according to an embodiment of the present application, fig. 4 is a schematic diagram of a method for depositing N-1 thin films by using N station reaction chambers according to an embodiment of the present application in a non-idle station manner, and fig. 5 is a flowchart of a method for depositing N-1 thin films by using N station reaction chambers according to an embodiment of the present application in a non-idle station manner. As shown in the figure, the method for realizing N-1 thin film deposition by the N station reaction chambers of the embodiment in a non-idle station mode is illustrated by taking N=4 as an example, namelyA Vector extruder machine with four stations is an example, but n=5 or n=6 is also applicable. This example is intended to deposit silicon dioxide (SiO) 2 ) Three-layer films of silicon oxynitride (SiON) and silicon nitride (SiN).
First, step S1 is a device providing step. In step S1, a reaction chamber C is provided having four stations 1, 2, 3, 4, each of which is capable of providing a substrate S, the four substrates S being capable of being cyclically moved in the four stations 1, 2, 3, 4. The reaction chamber C of this embodiment may be a four-station reaction chamber of Vector extruder developed by the ubiquitin group (LAM research), and the four stations 1, 2, 3, 4 may be sequentially arranged in a clockwise direction or sequentially arranged in a counterclockwise direction. Wherein two of the four stations are selected for depositing a first film, in this embodiment a silicon dioxide film, as the first station 1 and the second station 2. The other two stations of the four stations are a third station 3 and a fourth station 4 for depositing a second film and a third film, respectively. In this embodiment, the second film is a silicon oxynitride film, and the third film is a silicon nitride film. Then, the process proceeds to step S2.
Step S2 is an initial loading step. In step S2, two substrates S are moved into the first station 1 and the fourth station 4 of the reaction chamber C in a state where the substrates are not placed at the four stations of the reaction chamber C. Then, the process proceeds to step S3.
Step S3 is the first moving step in the initial stage. In step S3, two substrates S are moved in the same direction from the first station 1 to the second station 2 and from the fourth station 4 to the first station 1, respectively. Then, the process proceeds to step S4.
Step S4 is a first thin film deposition step, and in step S4, the first thin film is deposited on the two substrates at the first station 1 and the second station 2 simultaneously. Then, the process proceeds to step S5.
Step S5 is a second moving step in the initial stage. In step S5, the two substrates S on which the first thin film has been deposited are moved in the same direction from the second station 2 to the third station 3, and from the first station 1 to the second station 2, respectively. Then, the process proceeds to step S6.
Step S6 is a substrate loading and unloading step. Since the two substrates loaded in the initial loading step S2 have been moved to the second station 2 and the third station 3, respectively, the two substrates S are moved into the first station 1 and the fourth station 4 of the reaction chamber C from the outside in step S6. Then, the process proceeds to step S7.
Step S7 is a second thin film deposition step. In step S7, the substrate S on which the first thin film has been deposited is deposited with a second thin film on the first thin film at the third station 3. Then, the process proceeds to step S8.
Step S8 is a first moving step. In step S8, four substrates are moved in the same direction toward adjacent stations. After step S8 is performed, the first station 1 and the second station 2 are substrates S on which no thin film has been deposited, the third station 3 is a substrate S' on which a first thin film has been deposited, and the fourth station 4 is a substrate S on which a first thin film and a second thin film have been deposited. Then, the process proceeds to step S9.
Step S9 is to synchronously perform the first thin film deposition step, the second thin film deposition step, and the third thin film deposition step. In step S9, a first thin film is deposited on the substrate S at the first station 1 and the second station 2 to form a substrate S ', a second thin film is deposited on the substrate S ' at the third station 3 to form a substrate S ", and a third thin film is deposited on the substrate S" at the fourth station 4 to form a substrate S ' ". Then, the process proceeds to step S10.
Step S10 is a second moving step. In step S10, four substrates are moved in the same direction toward adjacent stations. After the step S10 is performed, the first station 1 is a substrate S '"on which the first, second and third films have been deposited, the second and third stations 2 and 3 are a substrate S' on which the first film has been deposited, and the fourth station 4 is a substrate S" on which the first and second films have been deposited. Then, the process proceeds to step S11.
Step S11 is to simultaneously perform the second thin film deposition step and the third thin film deposition step. In step S11, a second thin film is deposited on the substrate S 'at the third station 3 to form a substrate S ", and a third thin film is deposited on the substrate S" at the fourth station 4 to form a substrate S' ". Then, the process proceeds to step S12.
Step S12 is a substrate loading and unloading step. In step S12, two substrates S' "on which the first, second and third films have been deposited are removed from the reaction chamber from the first station 1 and the fourth station 4. Then, it is determined whether or not continuous deposition is performed. If the continuous deposition is performed, step S12' is advanced to move two substrates S, on which thin films are not deposited, from the outside into the first station 1 and the fourth station 4 of the reaction chamber C. At this time, the substrate state at each station in the reaction chamber C is the state after the step S7 is performed and before the step S8 is performed. And repeating the steps S8 to S12, namely, continuously depositing the first film, the second film and the third film on the substrate in a mode of no idle station.
When the reaction chamber C is to be stopped, the substrate is not moved from the outside but the process proceeds from step S12 to step S13.
In step S13, the substrate s″ is moved from the third station 3 to the fourth station 4, then the substrate S' is moved from the second station 2 to the third station 3, and then step S14 is entered.
In step S14, the second thin film deposition step and the third thin film deposition step are performed simultaneously. The second thin film is deposited on the substrate S 'at the third station 3 to become the substrate S ", and the third thin film is deposited on the substrate S" at the fourth station 4 to become the substrate S' ". Then, the process advances to step S15.
In step S15, the substrate S' "is moved from the fourth station 4 to the first station 1, and then the substrate S" is moved from the third station 3 to the fourth station 4. Then, the process advances to step S16.
In step S16, a third thin film deposition step is performed, and a third thin film is deposited on the substrate S "at the fourth station 4 to form a substrate S'". Then, the process proceeds to step S17.
In step S17, the substrates S' "of the first station 1 and the fourth station 4 on which the first thin film, the second thin film, and the third thin film have been deposited are removed from the reaction chamber C, and then the reaction chamber C is stopped.
The film deposition method of the application realizes the process of depositing the N-1 layer film on the substrate in a non-idle station mode by synchronously depositing the first film on the substrate at the first station and the second station, depositing the second film on the substrate on which the first film is deposited at the third station, depositing the third film on the substrate on which the second film is deposited at the fourth station, and depositing the N-1 layer film on the substrate on which the N-2 layer film is deposited at the N station.
In addition, after the substrate is loaded, the substrate is rotated and moved to the adjacent stations, then the first thin film deposition step, the second thin film deposition step and the third thin film deposition step are synchronously implemented, the substrate is rotated and moved to the adjacent stations again, and then the second thin film deposition step and the third thin film deposition step are synchronously implemented, so that the three-layer thin film deposition process can be implemented only by implementing five thin film deposition steps, and compared with the conventional Vector extruder, the three-layer thin film deposition process can be implemented only by implementing the first thin film, the second thin film and the third thin film deposition steps twice synchronously, and the three-layer thin film deposition process can be implemented more effectively.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those of ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are also within the protection of the present application.
Claims (5)
1. A method of thin film deposition comprising the steps of:
providing a reaction chamber (C) with four stations, wherein each of the four stations is provided with a substrate arrangement, the four substrates can circularly move in the four stations, the four stations comprise a first station (1), a second station (2), a third station (3) and a fourth station (4), the first station (1) and the second station (2) are used for depositing a first film, and the third station (3) and the fourth station (4) are used for depositing a second film and a third film respectively;
an initial loading step (S2) of moving two substrates (S) into the first station (1) and the fourth station (4) of the reaction chamber (C) in a state in which the substrates (S) are not placed at the four stations of the reaction chamber (C); a first moving step (S3) of moving the two substrates (S) from the first station (1) to the second station (2) and from the fourth station (4) to the first station (1) in the same direction, respectively;
a first thin film deposition step (S4) of simultaneously depositing the first thin film on the two substrates (S) at the first station (1) and the second station (2);
a second moving step (S5) of moving the two substrates (S') on which the first thin film has been deposited in the same direction to the second station (2) and the third station (3), respectively;
substrate loading/unloading step (S6): -moving the other two substrates (S) from the outside into the first station (1) and the fourth station (4) of the reaction chamber (C);
a second thin film deposition step (S7): -depositing said second film on said substrate (S') on which said first film is deposited at said third station (3);
a first moving step (S8) of moving the substrate (S) on which the second thin film is deposited, the substrate (S') on which the first thin film is deposited, and the other two substrates (S) in the same direction toward the fourth station (4), the third station (3), the second station (2), and the first station (1), respectively; and
and a third thin film deposition step: a third film is deposited on the substrate (S') on which the second film is deposited.
2. The method of thin film deposition of claim 1, further comprising:
-depositing said first film on said two other substrates (S);
depositing the second film on the substrate (S') on which the first film is deposited;
a second moving step (S10): -moving the substrate (S '") on which the third film is deposited, the substrate (S") on which the second film is deposited and the two substrates (S') on which the first film is deposited, respectively, towards a first station (1), a fourth station (4), a second station (2) and a third station (3);
depositing a third film on the substrate (S ") of the second film; and
a second film is deposited on the substrate (S) at the third station.
3. The method of thin film deposition according to claim 2, further comprising a substrate loading and unloading step (S12) of moving two of the substrates (S' ") on which the first thin film, the second thin film, and the third thin film have been deposited out of the reaction chamber (C) from the first station (1) and the fourth station (4).
4. The method of thin film deposition according to claim 2, wherein the first thin film deposition step, the second thin film deposition step, and the third thin film deposition step are performed simultaneously between the first moving step (S8) and the second moving step (S10).
5. The method of thin film deposition according to claim 2, wherein the second thin film deposition step and the third thin film deposition step are performed simultaneously after the second moving step (S10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210988828.7A CN115418629B (en) | 2022-08-17 | 2022-08-17 | Method for thin film deposition |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210988828.7A CN115418629B (en) | 2022-08-17 | 2022-08-17 | Method for thin film deposition |
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| CN115418629A CN115418629A (en) | 2022-12-02 |
| CN115418629B true CN115418629B (en) | 2024-01-12 |
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