CN115418629A - Method for depositing thin film - Google Patents
Method for depositing thin film Download PDFInfo
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- CN115418629A CN115418629A CN202210988828.7A CN202210988828A CN115418629A CN 115418629 A CN115418629 A CN 115418629A CN 202210988828 A CN202210988828 A CN 202210988828A CN 115418629 A CN115418629 A CN 115418629A
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- 238000000151 deposition Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 55
- 239000010409 thin film Substances 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 230000008021 deposition Effects 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims description 67
- 238000000427 thin-film deposition Methods 0.000 claims description 32
- 238000007736 thin film deposition technique Methods 0.000 claims description 3
- 101100134058 Caenorhabditis elegans nth-1 gene Proteins 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000005137 deposition process Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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Abstract
An apparatus providing step of providing a reaction chamber having N stations, each station being provided with a substrate, the N substrates being capable of moving cyclically at the N stations, wherein two adjacent stations among the N stations are selected to be a first station and a second station, the first station and the second station are used for depositing a first film, and the other stations are respectively a third station to an Nth station and are used for depositing a second film to an N-1 th film; a first film deposition step of simultaneously depositing the first film on two substrates at a first station and a second station; and other film deposition step of depositing the second film to the N-1 film on the substrate deposited with the first film to the N-2 film at the third station to the N station respectively.
Description
Technical Field
The present disclosure relates to the field of semiconductor technology, and more particularly, to a method for depositing a thin film.
Background
Ion enhanced chemical vapor deposition (PECVD) techniques are widely used in the fabrication of integrated circuits. In order to improve the production efficiency, a multi-task-site reaction chamber is developed, such as a reactor insert developed by the famine research group (LAM research), which has four stations for placing four substrates (wafers), wherein the four substrates are circularly moved to adjacent stations by rotating the four substrates, and different materials can be respectively deposited at the four stations to realize continuous deposition, thereby improving the production efficiency.
The reactor chamber of Vector Extreme described above currently supports an nxm deposition mode, where N is the number of substrates transferred per rotation, and in the current mode, N is 2, and substrates can be rotated 90 degrees or 180 degrees at a time to move toward an adjacent station; m is the number of times each substrate is deposited, each station can deposit the same material, or two stations are a pair, two pairs deposit different materials, or all stations deposit different materials, such that M can be 4, 2, or 1, i.e., existing Vector Extreme reaction chambers can deposit one, two, or four layers of material.
Some material layers with specific functions, such as a Metal insulator Metal layer (MIM layer) used as a capacitor, have special requirements for the deposition process, and it is necessary to maintain a vacuum environment during the deposition process of these three layers, so that a triple deposition process needs to be performed in the same reaction chamber, and the multi-site deposition process of Vector exit machine of the geneva group can realize the triple deposition process.
The conventional method for realizing a three-layer deposition process by using a Vector Extreme machine of the fan group is shown in fig. 1, a first station 1, a second station 2 and a third station 3 of a reaction chamber C are respectively used for depositing a silicon dioxide film, a silicon oxynitride film and a silicon nitride film, and a fourth station 4 is only used for loading or unloading a substrate. FIG. 2 is a schematic diagram of a conventional Vector Extreme tool for implementing a three-layer deposition process. Two substrates S are loaded on the first station 1 and the fourth station 4 at a time, then the four substrates S respectively synchronously deposit a silicon dioxide film, a silicon oxynitride film and a silicon nitride film on the substrates S at the first station 1, the second station 2 and the third station 3 for two times, and after each film deposition, the four substrates S are moved to adjacent stations through rotating 90 degrees, so that the process of depositing three layers of films on the substrates is realized.
Although the above conventional processes can deposit three layers of thin films on the substrate, the fourth station 4 is only used for loading or unloading the substrate S, and is not used for depositing the thin film, which results in idle stations, thereby reducing the utilization rate of the machine and possibly affecting the stability of the process.
Disclosure of Invention
The embodiment of the application provides a method for depositing a film, which is used for solving the problems that in the prior art, because a station is idle, the utilization rate of a machine table is reduced, and the stability of the process is influenced.
In order to solve the technical problem, the present application is implemented as follows:
the method for depositing the thin film comprises the following steps of providing a reaction chamber with N stations, wherein each station of the N stations is provided with a substrate, and the N substrates can circularly move in the N stations, wherein two adjacent stations of the N stations are selected to be a first station and a second station, the first station and the second station are used for depositing the first thin film, and the other stations are respectively a third station to an Nth station and are respectively used for depositing the second thin film to an N-1 th thin film; a first film deposition step of simultaneously depositing the first film on two substrates at a first station and a second station; and other film deposition steps of depositing second to N-1 th films on the substrates on which the first to N-2 th films have been deposited at the third to N-th stations, respectively.
Optionally, in some embodiments, N =4, the other film deposition steps further include a second film deposition step of depositing a second film on the substrate on which the first film has been deposited at the third station; and a third film deposition step of depositing a third film on the substrate on which the second film has been deposited at the fourth station.
Optionally, in some embodiments, the method further comprises a substrate loading and unloading step of moving the two substrates out of the first station and the fourth station or into the reaction chamber.
Optionally, in some embodiments, the substrate loading and unloading step is followed by a first moving step of moving the four substrates in the same direction to adjacent stations.
Optionally, in some embodiments, the first moving step is followed by a second moving step of moving the four substrates in the same direction to adjacent stations.
Optionally, in some embodiments, the first film deposition step, the second film deposition step, and the third film deposition step are performed simultaneously between the first moving step and the second moving step.
Optionally, in some embodiments, before the substrate loading and unloading step, an initial loading step of moving two substrates into the first station and the fourth station of the reaction chamber in a state that no substrate is placed in the four stations of the reaction chamber is further included.
Optionally, in some embodiments, the method further comprises an initial stage first moving step of moving the two substrates to the second station and the first station in the same direction after the initial unloading step.
Optionally, in some embodiments, the first thin film deposition step is performed between the initial stage first moving step and the initial stage second moving step.
Optionally, in some embodiments, the method further comprises an initial-stage second moving step of moving the two substrates to the third station and the second station in the same direction after the initial-stage first moving step and after performing the first thin film deposition step.
Optionally, in some embodiments, a second film deposition step is performed between the initial second moving step and the substrate loading and unloading step.
According to the film deposition method, the first film is synchronously deposited on the substrate at the first station and the second station, the second film is deposited on the substrate on which the first film is deposited at the third station, the third film is deposited on the substrate on which the second film is deposited at the fourth station, and the N-1 film is deposited on the substrate on which the N-2 film is deposited at the Nth station, so that the process of depositing N-1 layers of films on the substrate in a non-idle-station mode is realized.
In addition, the method for realizing three-layer film deposition by using the four-station reaction chamber comprises the steps of firstly enabling the substrate to rotate and move to the adjacent station after the substrate is loaded, then synchronously implementing the first film deposition step, the second film deposition step and the third film deposition step, then enabling the substrate to rotate and move to the adjacent station again, and then synchronously implementing the second film deposition step and the third film deposition step.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a schematic diagram of a station configuration and three material deposition stations of a prior art four-station reaction chamber;
FIG. 2 is a prior art method of achieving three-layer thin film deposition with the four-station reaction chamber of FIG. 1;
FIG. 3 is a schematic illustration of a station configuration for an N-station reaction chamber and a station for depositing N-1 materials in accordance with an embodiment of the present application;
FIGS. 4 and 5 are schematic diagrams illustrating a method of depositing N-1 thin films in a non-idle station manner in an N-station reaction chamber according to an embodiment of the present application;
FIGS. 6, 7 and 8 are flow charts of a method for depositing N-1 thin films in a non-idle station manner in a N-station reaction chamber according to an embodiment of the present disclosure.
1, a first station; 2, a second station; 3, a third station; 4, a fourth station; c, a reaction chamber S is a substrate; s', a substrate deposited with a first film; s' is the substrate deposited with the second film; s' ″ a substrate on which a third film has been deposited.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, of the embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 3, 4 and 5, fig. 3 is a schematic diagram of a station configuration of N station reaction chambers and a station for depositing N-1 materials according to an embodiment of the present disclosure, fig. 4 is a schematic diagram of a method for depositing N-1 thin films by using N station reaction chambers without idle stations according to an embodiment of the present disclosure, and fig. 5 is a flowchart of a method for depositing N-1 thin films by using N station reaction chambers without idle stations according to an embodiment of the present disclosure. As shown in the figure, the method for depositing N-1 layers of thin films in the N-station reaction chamber without idle stations is illustrated by taking N =4 as an example, that is, a Vector Extreme machine with four stations is taken as an example, but the case of N =5 or N =6 is also applicable. This embodiment is intended to deposit silicon dioxide (SiO) on the substrate sequentially 2 ) Silicon oxynitride (SiON) and silicon nitride (SiN).
First, step S1 is a device providing step. In step S1, a reaction chamber C is provided having four stations 1, 2, 3, 4, each of which is capable of holding one substrate S, the four substrates S being capable of being cyclically moved in the four stations 1, 2, 3, 4. The reaction chamber C of this embodiment may be a four-station reaction chamber of Vector Extreme developed by the group of the smart forest (LAM research), and the four stations 1, 2, 3, and 4 may be arranged in sequence in a clockwise direction or in sequence in a counterclockwise direction. Two of the four stations selected as the first station 1 and the second station 2 are used for depositing a first thin film, which is a silicon dioxide thin film in this embodiment. The other two of the four stations are a third station 3 and a fourth station 4, respectively, for depositing a second film and a third film, respectively. In this embodiment, the second film is a silicon oxynitride film, and the third film is a silicon nitride film. The process then proceeds to step S2.
Step S2 is an initial loading step. In step S2, two substrates S are moved into the first station 1 and the fourth station 4 of the reaction chamber C in a state where no substrate is placed in the four stations of the reaction chamber C. The process then proceeds to step S3.
Step S3 is the first moving step of the initial stage. In step S3, two substrates S are moved in the same direction from the first station 1 to the second station 2, and from the fourth station 4 to the first station 1, respectively. The process then proceeds to step S4.
Step S4 is a first thin film deposition step, and in step S4, two substrates are simultaneously deposited with a first thin film at the first station 1 and at the second station 2. The process then proceeds to step S5.
Step S5 is a second initial moving step. In step S5, the two substrates S on which the first thin film has been deposited are moved in the same direction from the second station 2 to the third station 3, and from the first station 1 to the second station 2, respectively. The process then proceeds to step S6.
Step S6 is a substrate mounting/dismounting step. Since the two substrates S loaded in the initial loading step S2 have been moved to the second station 2 and the third station 3, respectively, the two substrates S are moved from the outside into the first station 1 and the fourth station 4 of the reaction chamber C in step S6. The process then proceeds to step S7.
Step S7 is a second thin film deposition step. In step S7, the substrate S on which the first thin film has been deposited is deposited with a second thin film on the first thin film at the third station 3. The process then proceeds to step S8.
Step S8 is a first moving step. In step S8, the four substrates are moved in the same direction to adjacent stations. After step S8, the first station 1 and the second station 2 are substrates S on which thin films have not been deposited, the third station 3 is a substrate S on which a first thin film has been deposited, and the fourth station 4 is a substrate S ″ on which a first thin film and a second thin film have been deposited. The process then proceeds to step S9.
Step S9 is to simultaneously perform the first thin film deposition step, the second thin film deposition step, and the third thin film deposition step. In step S9, a first thin film is deposited on the substrate S of the first station 1 and the second station 2 to form a substrate S ', a second thin film is deposited on the substrate S ' of the third station 3 to form a substrate S ", and a third thin film is deposited on the substrate S ″ of the fourth station 4 to form a substrate S '". The process then proceeds to step S10.
Step S10 is a second moving step. In step S10, four substrates are moved in the same direction to adjacent stations. After step S10 is performed, the substrate S' "on which the first, second, and third thin films have been deposited is at the first station 1, the substrate S" on which the first thin film has been deposited is at the second station 2 and third station 3, and the substrate S "on which the first and second thin films have been deposited is at the fourth station 4. The process then proceeds to step S11.
Step S11 is to perform the second thin film deposition step and the third thin film deposition step simultaneously. In step S11, a second thin film is deposited on the substrate S 'of the third station 3 to become the substrate S ", and a third thin film is deposited on the substrate S ″ of the fourth station 4 to become the substrate S'". The process then proceeds to step S12.
Step S12 is a substrate mounting/dismounting step. In step S12, the two substrates S' ″ on which the first, second, and third thin films have been deposited are removed from the first and fourth stations 1 and 4 out of the reaction chamber. It is then determined whether or not continuous deposition is to be performed. If the continuous deposition is performed, the process proceeds to step S12' to move the two substrates S on which the thin films are not deposited from the outside into the first and fourth stations 1 and 4 of the reaction chamber C. At this time, the substrate state of each station in the reaction chamber C is after step S7 is performed and before step S8 is performed. And repeating the steps S8 to S12, namely continuously depositing the first film, the second film and the third film on the substrate in a mode without idle stations.
When the reaction chamber C is to be stopped, the substrate is not moved in from the outside, but the process proceeds from step S12 to step S13.
In step S13, the substrate S ″ is moved from the third station 3 to the fourth station 4, and then the substrate S' is moved from the second station 2 to the third station 3, and then it proceeds to step S14.
In step S14, the second thin film deposition step and the third thin film deposition step are performed simultaneously. The second thin film is deposited on the substrate S 'at the third station 3 to become the substrate S ", and the third thin film is deposited on the substrate S" at the fourth station 4 to become the substrate S' ". The process then proceeds to step S15.
In step S15, the substrate S' "is moved from the fourth station 4 to the first station 1, and then the substrate S" is moved from the third station 3 to the fourth station 4. The process then proceeds to step S16.
In step S16, a third thin film deposition step is performed to deposit a third thin film on the substrate S ″ of the fourth station 4 to become a substrate S' ". The process then proceeds to step S17.
In step S17, the substrate S' ″ on which the first, second, and third thin films have been deposited at the first and fourth stations 1 and 4 is removed from the reaction chamber C, and then the reaction chamber C is shut down.
The thin film deposition method of the application synchronously deposits the first thin film on the substrate at the first station and the second station, deposits the second thin film on the substrate on which the first thin film is deposited at the third station, deposits the third thin film on the substrate on which the second thin film is deposited at the fourth station, and deposits the N-1 thin film on the substrate on which the N-2 thin film is deposited at the Nth station, thereby realizing the process of depositing N-1 layers of thin films on the substrate in a non-idle station mode.
In addition, according to the method for realizing three-layer film deposition by using the four-station reaction chamber, after the substrate is loaded, the substrate is rotated and moved to the adjacent station, then the first film deposition step, the second film deposition step and the third film deposition step are synchronously implemented, the substrate is rotated and moved to the adjacent station again, and then the second film deposition step and the third film deposition step are synchronously implemented.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a component of' 8230; \8230;" does not exclude the presence of another like element in a process, method, article, or apparatus that comprises the element.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
1. A method of thin film deposition comprising the steps of:
providing a reaction chamber (C) with N stations, wherein each station of the N stations is provided with a substrate, the N substrates can circularly move in the N stations, wherein two adjacent stations of the N stations are selected to be a first station (1) and a second station (2), the first station (1) and the second station (2) are used for depositing a first film, and the other stations are respectively a third station (3) to an Nth station and are respectively used for depositing a second film to an Nth-1 film;
a first film deposition step (S4, S9) of depositing simultaneously said first film on both said substrates (S) at said first station (1) and at said second station (2); and
and other film deposition steps of depositing second to N-1 thin films on the substrates on which the first to N-2 thin films have been deposited at the third to N-th stations (3) to (N) respectively.
2. The method of thin film deposition according to claim 1, wherein N =4, the other thin film deposition step further comprises:
a second thin film deposition step (S9, S14) of depositing the second thin film on the substrate (S') on which the first thin film has been deposited at the third station (3); and
a third film deposition step (S9, S14) of depositing said third film on said substrate (S') on which said second film has been deposited, at said fourth station (4).
3. The method of thin film deposition according to claim 2, further comprising a substrate loading and unloading step (S6) of moving two of the substrates (S, S' ") out of the first station (1) and the fourth station (4) or into the reaction chamber (C).
4. The thin film deposition method according to claim 3, further comprising a first moving step (S8) of moving four substrates (S) in the same direction to adjacent ones of said stations after said substrate loading and unloading step (S6).
5. The method of thin film deposition according to claim 4, further comprising a second moving step (S10) of moving four of said substrates (S) in the same direction to adjacent said stations after said first moving step (S8).
6. The method of thin film deposition according to claim 5, wherein the first thin film deposition step, the second thin film deposition step and the third thin film deposition step are simultaneously performed between the first moving step (S8) and the second moving step (S10).
7. The method of thin film deposition according to claim 6, wherein the second thin film deposition step and the third thin film deposition step are simultaneously performed after the second moving step (S10).
8. The thin film deposition method according to claim 3, further comprising an initial loading step (S2) of moving two substrates (S) into the first station (1) and the fourth station (4) of the reaction chamber (C) in a state where no substrate is placed in four of the stations of the reaction chamber (C) before the substrate unloading step.
9. The method of thin film deposition according to claim 8, further comprising an initial stage first moving step (S3) of moving two of said substrates (S) in the same direction to said second station (2) and said first station (1) after said initial unloading step (S2).
10. The method of thin film deposition according to claim 9, wherein the first thin film deposition step is performed after the initial-stage first moving step.
11. The method of thin film deposition according to claim 10, further comprising an initial-stage second moving step (S5) of moving two of said substrates (S') in the same direction to said third station (3) and said second station (2) after said initial-stage first moving step (S3) and after performing said first thin film deposition step.
12. The method of claim 11, wherein the second thin film deposition step is performed between the initial stage second moving step and the substrate loading and unloading step.
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| CN202210988828.7A CN115418629B (en) | 2022-08-17 | 2022-08-17 | Method for thin film deposition |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060089946A (en) * | 2005-02-03 | 2006-08-10 | 삼성전자주식회사 | Chemical vapor deposition equipment having an additional cooling station and wafer processing method using the same |
| WO2010019007A2 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
| KR20110078812A (en) * | 2009-12-31 | 2011-07-07 | 엘아이지에이디피 주식회사 | Apparatus for chemical vapor deposition and method using the same |
| CN102677017A (en) * | 2011-03-18 | 2012-09-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Loading and unloading mechanism, chemical vapor deposition (CVD) equipment and control method of CVD equipment |
| CN104425331A (en) * | 2013-09-09 | 2015-03-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Rotary plate positioning device, loading transmission system and plasma processing equipment |
| US20150332912A1 (en) * | 2014-05-15 | 2015-11-19 | Lam Research Corporation | Single ald cycle thickness control in multi-station substrate deposition systems |
| JP2017199904A (en) * | 2016-04-29 | 2017-11-02 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Variable cycle and time rf activation method for thickness matching in multi-station deposition system |
| JP2019021654A (en) * | 2017-07-11 | 2019-02-07 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Method for manufacturing semiconductor device, and substrate processing device and program |
| US20190157149A1 (en) * | 2017-11-20 | 2019-05-23 | Tokyo Electron Limited | Method of selective film deposition for forming fully self-aligned vias |
| CN212476950U (en) * | 2020-04-13 | 2021-02-05 | 艾华(无锡)半导体科技有限公司 | Multi-station wafer bearing disc |
| CN114883234A (en) * | 2022-05-05 | 2022-08-09 | 希科半导体科技(苏州)有限公司 | Transfer device and method for automatically transferring multiple wafers and vapor deposition system |
-
2022
- 2022-08-17 CN CN202210988828.7A patent/CN115418629B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060089946A (en) * | 2005-02-03 | 2006-08-10 | 삼성전자주식회사 | Chemical vapor deposition equipment having an additional cooling station and wafer processing method using the same |
| WO2010019007A2 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
| KR20110078812A (en) * | 2009-12-31 | 2011-07-07 | 엘아이지에이디피 주식회사 | Apparatus for chemical vapor deposition and method using the same |
| CN102677017A (en) * | 2011-03-18 | 2012-09-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Loading and unloading mechanism, chemical vapor deposition (CVD) equipment and control method of CVD equipment |
| CN104425331A (en) * | 2013-09-09 | 2015-03-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Rotary plate positioning device, loading transmission system and plasma processing equipment |
| US20150332912A1 (en) * | 2014-05-15 | 2015-11-19 | Lam Research Corporation | Single ald cycle thickness control in multi-station substrate deposition systems |
| CN105088197A (en) * | 2014-05-15 | 2015-11-25 | 朗姆研究公司 | Single ALD cycle thickness control in multi-station substrate deposition systems |
| JP2017199904A (en) * | 2016-04-29 | 2017-11-02 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Variable cycle and time rf activation method for thickness matching in multi-station deposition system |
| JP2019021654A (en) * | 2017-07-11 | 2019-02-07 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Method for manufacturing semiconductor device, and substrate processing device and program |
| US20190157149A1 (en) * | 2017-11-20 | 2019-05-23 | Tokyo Electron Limited | Method of selective film deposition for forming fully self-aligned vias |
| CN212476950U (en) * | 2020-04-13 | 2021-02-05 | 艾华(无锡)半导体科技有限公司 | Multi-station wafer bearing disc |
| CN114883234A (en) * | 2022-05-05 | 2022-08-09 | 希科半导体科技(苏州)有限公司 | Transfer device and method for automatically transferring multiple wafers and vapor deposition system |
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