KR20200045872A - System For Processing Semiconductor substrate and Method of Depositing Thin Film Using The Same - Google Patents

Abstract

The present invention relates to a substrate processing system and a thin film deposition method using the same which can improve thin film properties and productivity. The method deposits a thin film by using a substrate processing system including a process module having a chamber, a transfer module to maintain a vacuum with the process module, and a gas supply block to supply gases for depositing a first thin film in the chamber, gases for depositing a second thin film, and a seasoning gas, and comprises: a step of loading a substrate into the chamber of the process module; a step of supplying the gases for depositing the first thin film in the chamber to deposit the first thin film on an upper portion of the substrate; a step of discharging the substrate out of the process module; a step of supplying the seasoning gas into the chamber to season the inside of the chamber; a step of loading the substrate into the chamber; and a step of depositing the second thin film on an upper portion of the first thin film of the substrate.

Description

System for processing semiconductor substrate and method of depositing thin film using the same

The present invention relates to a substrate processing system and a thin film deposition method using the same, and more particularly, to a substrate processing system capable of depositing different types of thin films in one chamber and a thin film deposition method using the same.

In manufacturing a highly integrated semiconductor device, miniaturization of a pattern is essential. In order to integrate more devices in a small area, it is necessary to reduce the pitch between each pattern and patterns constituting the device. Recently, as the design rules of semiconductor devices are rapidly reduced, there are limitations in forming patterns having fine line widths and pitches due to exposure limitations of current photolithography processes.

Currently, in order to limit the fine pattern below the exposure limit, various etching methods have been proposed, and one of them is a method using a hard mask film.

The hard mask film is required to have an etched layer and corrosion resistance, and a silicon nitride film and an amorphous silicon film lamination film are generally used as the hard mask film. The silicon nitride film and the amorphous silicon film are generally formed in different chambers because the types and deposition temperatures of the deposition gases are different.

However, as the silicon nitride film and the amorphous silicon are individually formed, there is a problem in that throughput decreases.

The present invention provides a substrate processing system capable of improving film quality characteristics and productivity, and a thin film deposition method using the same.

A substrate processing system according to an embodiment of the present invention includes a process module including a chamber; A transfer module connected to the process module to maintain a vacuum with each other; A gas supply unit supplying gases required for deposition into the chamber of the process module; And a control unit controlling the gas supply of the gas supply unit, wherein the gas supply unit includes a first gas supply block supplying gases for depositing a first thin film on a substrate, and a second thin film on the first thin film. Between the second gas supply block for supplying gases for deposition, and the gas supply for depositing the first thin film and the gas supply for depositing the second thin film, the adhesive properties of the first thin film and the second thin film are determined. In order to improve, a seasoning gas supply unit for supplying a seasoning gas into the chamber is included.

In addition, the thin film deposition method according to an embodiment of the present invention includes a process module having a chamber, a transfer module maintaining a vacuum with the process module, and gases for depositing a first thin film in the chamber, a second thin film A method of depositing a thin film using a substrate processing system comprising a gas supply block for supplying gas and a seasoning gas for depositing, comprising: loading a substrate into a chamber of the process module; Depositing a first thin film on top of the substrate by supplying gases for depositing the first thin film inside the chamber; Taking the substrate out of the process module; Supplying the seasoning gas into the chamber to season the interior of the chamber; Loading the substrate into the chamber; And depositing a second thin film on the first thin film of the substrate.

According to the present invention, between the first thin film forming process and the second thin film forming process, and / or between the second thin film forming process and the first thin film forming process, the inside of the chamber is seasoned with the semiconductor substrate taken out of the chamber. do. Accordingly, a protective film is formed between the first thin film and the second thin film adsorbed on the inner wall of the chamber. Accordingly, the adhesion between the first thin film and the second thin film adsorbed on the inner wall of the chamber is improved, so that the problem of the first thin film or the second thin film falling during the substrate processing process can be reduced.

Further, by forming the heterogeneous first thin film and the second thin film on a semiconductor substrate in a substantially in-situ method, a natural oxide film between the first thin film and the second thin film is not generated. Accordingly, when a hard mask film is implemented with the first thin film and the second thin film, not only pattern defects can be prevented, but productivity is also improved.

1 is a plan view of a multi-film processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of a process module for depositing multiple thin films according to an embodiment of the present invention.
3 is a flow chart for explaining a thin film deposition method according to an embodiment of the present invention.
4 and 5 are cross-sectional views for each process for explaining a thin film deposition method according to an embodiment of the present invention.
6A and 6B are graphs showing temperature distribution for each deposition step according to an embodiment of the present invention.
7 is a view showing a substrate processing system for explaining a general heterogeneous thin film deposition process.
8 is a view showing a substrate processing system for explaining a process of depositing a heterogeneous thin film in one process module according to an embodiment of the present invention.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present invention to be complete, and the ordinary knowledge in the technical field to which the present invention pertains. It is provided to fully inform the holder of the scope of the invention, and the invention is only defined by the scope of the claims. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity of explanation. The same reference numerals refer to the same components throughout the specification.

1 is a plan view of a substrate processing system according to an embodiment of the present invention.

Referring to FIG. 1, the thin film processing apparatus 100 may include a load port 110, a substrate transfer module 120, a load lock chamber 130, a transfer module 140, and a plurality of process modules 150. have.

The load port 110 is a storage chamber 110a, 110b, 110c, also called a front open unified pod (FOUP), and a plurality of load ports 110 may be provided. The load port 130 may be connected to the substrate transfer module 120. The substrate transfer module 120 may take the substrate loaded into the storage chambers 110a, 110b, and 110c into the transfer module 140 or return the completed substrate to the storage chambers 110a, 110b, and 110c. have.

The load lock chamber 130 may be connected between the substrate transfer module 120 and the transfer module 140. The load lock chamber 130 may selectively maintain a vacuum state and an atmospheric pressure state. For example, when the load lock chamber 130 and the transfer module 140 are exchanged, the load lock chamber 130 may maintain the same vacuum atmosphere as the transfer module 140. In addition, when the load lock chamber 130 and the substrate transfer module 120 are exchanged, the load lock chamber 130 may maintain atmospheric pressure. Here, the alternating current between two members may mean the movement of the substrate between the two members. The load lock chamber 130 may include a carrier (not shown) that stores a substrate to be processed or processed.

The transfer module 140 transfers the substrate provided from the load lock chamber 130 to the process modules 150a, 150b, 150c, or loads the substrate on which the process is completed from the process modules 150a, 150b, 150c. It may include a transfer robot 145 for delivery to (130).

The process module 150 is arranged to be connected to the transfer module 140. The transfer module 140 may include a plurality of side surfaces. The load lock chamber 130 may be connected to one side of the transfer module 140, and the process modules 150a, 150b, and 150c may be connected to the other side surfaces, respectively. A gate (not shown) is positioned between the process module 150 and the transfer module 140 to be connected to each other. For example, when the planar structure of the transfer module 140 is a square shape, the substrate transfer module 120 and the load lock chamber 130 are connected to one side, and the process modules 150a, 150b, and 150c are provided on the other three sides. ) May be located respectively.

The process modules 150a, 150b, and 150c of this embodiment are configured to deposit heterogeneous thin films deposited at different deposition temperatures. The process modules 150a, 150b, and 150c of this embodiment may be, for example, plasma enhanced chemical vapor deposition (PECVD) devices.

2 is a cross-sectional view of a process module for depositing multiple thin films according to an embodiment of the present invention.

Referring to FIG. 2, each process module 150 includes a chamber 200, a controller 201, a shower head 230, a substrate support 240, a driver 250, a plasma power supply 260, a matching network 270 and a heater power supply unit 290.

The chamber 200 may include a main body 210 with an open top and a top lead 220 installed on an upper circumference of the main body 210. The interior space of the top lid 220 may be closed by the shower head 230. An insulating ring r is installed between the shower head 230 and the top lead 220 to electrically insulate the chamber 200 and the shower head 230.

A deposition process and a seasoning process of a plurality of thin films may be performed in the space inside the chamber 200. A gate G to which the substrate W is carried in and out may be provided at a designated position on the side of the main body 210.

In order to vacuum the inside of the chamber 200, a pump 213 may be connected to an exhaust port 212 located under the chamber 200.

The shower head 230 may be installed inside the top lid 215 to face the substrate support 240. The shower head 230 may receive various process gases supplied from the outside through the gas supply line L and inject them into the chamber 200. In this embodiment, the shower head 230 may act as a first electrode for generating plasma.

In the gas supply line L of the shower head 230 of this embodiment, the first process source supply unit 240a, the second process source supply unit 240b, the first reaction source supply unit 245a, and the second reaction source supply unit ( 245b), the first inert gas supply unit 250a, the second inert gas supply unit 250b, and the seasoning gas supply unit 255 may be connected. The gas supply line L includes a first process source supply part 240a, a second process source supply part 240b, a first reaction source supply part 245a, a second reaction source supply part 245b, and a first inert gas supply part ( 250a), the second inert gas supply unit 250b and the seasoning gas supply unit 255 so as to be connected to each branch. In addition, for control of gas supply, the first process source supply unit 240a, the second process source supply unit 240b, the first reaction source supply unit 245a, the second reaction source supply unit 245b, and the first inert gas Supply control valves V1 to V6 may be installed between the supply part 250a, the second inert gas supply part 250b, and the seasoning gas supply part 255 and the branch part of the gas supply line L.

For example, when a first thin film is deposited, a first process source, a first reaction source and a first inert gas can be selectively provided. Further, when the second thin film is deposited, a second process source, a second reaction source and a second inert gas may be provided. Between the first thin film forming process and the second thin film forming process, a seasoning gas may be provided for seasoning treatment inside the chamber 200.

First process source supply unit 240a, second process source supply unit 240b, first reaction source supply unit 245a, second reaction source supply unit 245b, first inert gas supply unit 250a, and second inert gas supply unit 250b and the seasoning gas supply unit 255 and the gas supply line L are not limited to the structure of this embodiment, and can be modified in various forms.

The substrate support part 240 may include a substrate seating part (susceptor 242) and a support shaft 244. The substrate seating portion 242 may have a flat plate shape so that at least one substrate W is seated on an upper surface. The support shaft 244 is vertically coupled to the rear surface of the substrate seating portion 242 and is connected to an external driving unit 250 through a through hole at the bottom of the chamber 200, thereby lifting and / or rotating the substrate seating portion 242. I can do it. In this embodiment, the substrate seating portion 242 may act as a second electrode for generating plasma.

In addition, a heater 246 is provided inside the substrate seating portion 242 to control the temperature of the substrate 100 seated on the top, and further, the temperature inside the chamber 200. The heater power supply unit 290 may be connected to the heater 246 to provide power.

The controller 201 is configured to control the overall operation of the process module 150. In one embodiment, the controller 201 controls the operation of each component 200 to 290, V1 to V6 of the process module 150, and controls for the first thin film deposition process, the second thin film deposition process, and the seasoning process You can set the parameters. Although not shown, the controller 201 may include a central processing unit, a memory, an input / output interface, and the like.

The plasma power supply unit 260 may include a first power supply unit 261 and a second power supply unit 263. The first power supply unit 261 may provide a high frequency (HF) radio frequency (RF) power source having a center frequency band of 10 MHz to 40 MHz, for example, 13.56 MHz as a plasma power source. The second power supply unit 263 may provide a low frequency (LF) RF power having a center frequency band of 300 kHz to 500 kHz, for example, 370 KHz as a plasma power source. The controller 201 may control a power source supplied from the first power supply unit 261 and / or the second power supply unit 263 according to control parameters.

The matching network 270 may include a first matching unit 271 connected to the first power supply unit 261 and a second matching unit 273 connected to the second power supply unit 263. The first and second matching units 271 and 273 of the matching network 270 mutually match the output impedances of the first and second power supply units 261 and 263 and the load impedance in the chamber 200 to provide RF power. It can be configured to eliminate reflection loss as it is reflected from the chamber 200.

In this embodiment, the case of using dual plasma power is illustrated, but the case of using a single plasma power may also correspond to this.

3 is a flow chart for explaining a thin film deposition method according to an embodiment of the present invention. 4 and 5 are cross-sectional views for each process for explaining a thin film deposition method according to an embodiment of the present invention. 6A and 6B are graphs showing temperature distribution for each deposition step according to an embodiment of the present invention.

1 to 6B, at least one semiconductor substrate W is loaded into a chamber 200 maintaining a first temperature in order to deposit a first thin film. For example, when the first thin film is a silicon nitride film for forming a hard mask film, the first temperature may be 400 to 500 ° C, preferably 480 ° C. The loaded semiconductor substrate W is mounted on the substrate support 240 inside the chamber 200.

By selectively driving the valves V1 to V3, the first process source supply unit 240a, the first reaction source supply unit 245a, and the first inert gas supply unit 250a are selectively supplied with gas of the shower head 230 It is connected to the line L. Accordingly, the first process source, the first reaction source and the first inert gas are selectively supplied onto the semiconductor substrate w through the shower head 230.

A plasma atmosphere may be formed inside the chamber 200 by the first inert gas, and the first thin film 310 may be formed on the first semiconductor substrate w by chemical reaction of the first process source and the first reaction source. : See FIG. 5) may be formed (S1: see FIG. 3). For example, when the first thin film 310 is used as a hard mask, the first thin film 310 may be a silicon nitride film.

When the silicon nitride film is formed as the first thin film 310, the first process source may include a silicon-containing source, for example, SiH4 gas. The first reaction source may include a nitrogen-containing source, such as NH3 gas. The first inert gas may include, for example, N2 gas or N2 / He gas.

In the process of forming the first thin film 310 on the semiconductor substrate W, as shown in FIG. 6, the first thin film material may be coated on the inner wall of the chamber 220.

The semiconductor substrate W on which the first thin film 310 is deposited is carried out to the transfer module 140 through the transfer robot 145 for cleaning and seasoning inside the chamber 200 (see S2: FIG. 3). . At this time, since the semiconductor substrate W is moved from the process module 150 that maintains mutual vacuum to the transfer module 140, since it is not exposed to oxygen (O2), a natural oxide film is generated on the surface of the first thin film 310. Does not work.

In the state in which the substrate W is carried out, the first seasoning process is performed inside the chamber 200 in order to proceed with a subsequent process, for example, a second thin film deposition process (S3, see FIG. 3). As is known, the seasoning process is a pre-treatment process to facilitate the subsequent process. In this embodiment, during the first seasoning process, seasoning gas may be supplied into the chamber 200. The silicon-containing gas and / or oxygen-containing gas may be used as the seasoning gas of this embodiment. Accordingly, as illustrated in FIG. 7, during the first seasoning process, a protective layer 315 may be coated on the inner wall of the chamber 200. The protective film 315 has excellent properties of adhesion to a first thin film material of a pre-coated silicon nitride film component.

Meanwhile, the first seasoning process may be performed at the same temperature as the first temperature, as shown in FIG. 6A. In addition, when the subsequent second thin film deposition process is performed in a second temperature band different from the first temperature, as shown in FIG. 6B, the chamber temperature from the first temperature to the second temperature during the first seasoning period Can be varied. For example, subsequently, when forming a second thin film of amorphous silicon, the temperature inside the chamber 200 may be varied from 350 to 450 ° C during the first seasoning section S3.

In some cases, a chamber cleaning step may be added between the substrate carrying out step S2 and the first seasoning process step S3.

The semiconductor substrate W waiting in the transfer module 140 is loaded into the chamber 200 in which the first seasoning process is completed (S4: see FIG. 3).

Next, by selectively driving the valves V4 to V6, the second process source supply unit 240b, the second reaction source supply unit 245b, and the second inert gas supply unit 250b are selectively connected to the shower head 230. Connected. Accordingly, a second process source, a second reaction source and a second inert gas are selectively supplied onto the substrate W through the shower head 230.

At this time, the second inert gas may form the inside of the chamber 200 in a plasma atmosphere when depositing the second thin film. Thereafter, a second thin film 320 is formed on the first thin film 310 of the first semiconductor substrate W by chemical reaction of the second process source and the second reaction source (S5: see FIG. 3).

In order to form the second thin film 320 including amorphous silicon, a silicon-containing source, for example, SiH4 gas, may be used as the second process source. As the second reaction source, a source capable of decomposing the silicon-containing source may be used, and in some cases, supply of the second reaction source may be omitted. He or Ar source may be used as the second inert gas.

Depending on the type of thin film to be stacked, the first process source supply unit 240a and the second process source supply unit 240b may be integrated into one process source supply unit. Likewise, when the first inert gas supply unit 250a and the second inert gas supply unit 250b are also of the same type, they may be integrated into one.

Accordingly, a stacked layer of heterogeneous first thin film 310 and second thin film 320 is formed on the semiconductor substrate W.

At this time, during the deposition process of the second thin film 320, the second thin film material may be coated on the inner wall of the chamber 200. In practice, the second thin film material is coated on the protective layer 315 coated on the inner wall of the chamber 200. The protective film 315, which is an oxide film component, has excellent adhesion properties to the first thin film material as well as the second thin film material, which is an amorphous silicon component. Therefore, due to poor adhesion of the first thin film material and the second thin film material to the inner wall of the chamber 200, it is possible to prevent the thin film materials from falling into the chamber, for example, toward the substrate seating portion 242.

Conventionally, the reason why a hard mask film made of a different material film, for example, a silicon nitride film and an amorphous silicon film, could not be deposited in a single chamber is because the adhesion between the silicon nitride film and the amorphous silicon film was poor. That is, when the silicon nitride film and the amorphous silicon film are continuously deposited, since the adhesive force between the silicon nitride film and the amorphous silicon film is poor, the amorphous silicon film coated on the inner wall of the chamber during the deposition process is not adhered to the silicon nitride film and is directed toward the semiconductor substrate w. It is because it fell and acted as a defect.

In order to solve this problem, a method in which silicon nitride film deposition and amorphous silicon film deposition are performed in individual equipment has been proposed, but in the process of moving between chambers, a natural oxide film is generated, thereby deteriorating the performance of the hard mask. , There was a problem that the throughput (throughput) is lowered.

However, as in the embodiment of the present invention, when a seasoning process is performed using a seasoning gas between the first thin film deposition process and the second deposition process, the first thin film material and the second thin film material on the inner wall of the chamber 200 A protective film serving as an adhesive can be formed between (eg, an amorphous silicon film). Accordingly, adhesion between the first thin film material (eg, silicon nitride film) and the second thin film material (eg, amorphous silicon film) coated on the inner wall of the chamber is improved, so that the second thin film material and / or the first thin film material It can solve the problem of falling inside.

On the other hand, since the semiconductor substrate W is subjected to a seasoning process in the state of being carried out to the transfer module 140 that maintains a vacuum, a protective film between the first thin film 310 and the second thin film 320 of the semiconductor substrate W Of course, a natural oxide film is not formed.

Next, the semiconductor substrate w on which the second thin film 320 is formed is carried out back to the transfer module 140 (S6: see FIG. 3).

Then, when the first thin film 310 needs to be deposited on the second thin film 320 again, the chamber 200 undergoes a second seasoning process under substantially the same conditions as the first seasoning process (S7: FIG. 3).

For example, when the first thin film 310 and the second thin film 320 are deposited at the same temperature, as shown in FIG. 6A, the second seasoning process (S7) also includes a second thin film deposition step (S7) and It may be performed in the same temperature band as the first thin film deposition step (S1).

On the other hand, when the first thin film 310 and the second thin film 320 are deposited at different temperatures, as shown in FIG. 6B, during the second seasoning process (S7), the chamber from the second temperature to the first temperature The temperature can be varied.

In addition, a cleaning process may be further performed between the carrying out step S6 of the substrate W and the second seasoning step S7.

Thereafter, as shown in FIG. 3, it is fed back to the first thin film deposition step (S1), and a subsequent process may be performed.

Since the heterogeneous thin film deposition process proceeds between the transfer module 140 and the process module 150 of the substrate processing system that maintains mutual vacuum, the heterogeneous thin film deposition process of the present embodiment is substantially in-situ. Can be done in a way. Accordingly, a natural oxide film is not generated between the different thin films.

Between the first thin film deposition process and the second thin film deposition process, the interior of the chamber 200 is seasoned while the semiconductor substrate W is carried out. By the seasoning process, a protective film 315 serving as an adhesive may be formed between the first thin film material 310a and the second thin film material 320a adsorbed on the inner wall of the chamber 200. Accordingly, the adhesion between the first thin film material 310 and the second thin film material 320 adsorbed on the inner wall of the chamber 200 may be improved, so that the first thin film material 310 or the second of the inner wall of the chamber 200 may be improved. The problem that the thin film material 320 separates and falls into the chamber can be reduced.

7 is a view showing a substrate processing system for explaining a general heterogeneous thin film deposition process, and FIG. 8 is a substrate processing system for explaining a process for depositing a heterogeneous thin film in one process module according to an embodiment of the present invention. It is the figure shown.

First, as shown in FIG. 7, the general substrate processing system 10 includes a first process module 400 for depositing a first thin film and a plurality of process modules 410a and 410b for depositing a second thin film. It can contain. For example, when it is necessary to deposit a heterogeneous thin film of a silicon nitride film and an amorphous silicon film, the substrate processing system 10 takes into account the deposition time, and includes one first process module 400 and two second process modules ( 410a, 410b) may be provided on the side of the transfer module 140.

Hereinafter, when the first process module 400 and the second process modules 410a and 410b are separately provided, a method of depositing a heterogeneous thin film will be described.

First, as shown in (a) of FIG. 7, when wafers 1 and 2 are loaded into the first process module 400, wafers 3 and 4 are waiting in the load lock chamber 130. . Thereafter, in the first process module 400, a first thin film is formed on wafers 1 and 2.

Next, as shown in (b) of FIG. 7, the first wafer and the second wafer on which the first thin film is formed are loaded into one of the second process modules 410a and 410b. In the second process modules 410a and 410b, a second thin film is formed on the first thin film of the first and second wafers. While the second thin film is formed on the first and second wafers, the third and fourth wafers waiting in the load lock chamber 130 are loaded into the first process module 400, and the third and A first thin film is formed on the fourth wafer. At this time, wafers 5 and 6 are waiting in the load lock chamber 130.

Next, as shown in FIG. 7C, the first and second wafers on which the second thin film is deposited are unloaded to the outside through the load lock chamber 130. Thereafter, wafers 3 and 4 on which the first thin film is deposited are loaded on the other of the second process modules 410a and 410b. In the second process modules 410a and 410b, a second thin film is formed on the first thin film of wafers 3 and 4. Meanwhile, wafers 5 and 6, which were in the air, are loaded into the first process module 400 so that the first thin film processing process may be performed. At this time, the 7th wafer and the 8th wafer may wait in the load lock chamber 130.

As such, when one thin film is deposited in one process module, even if the process modules 400, 410a, and 410b of the semiconductor system 10 can accommodate up to six wafers, a substantial heterogeneous thin film deposition process Runs on up to 4 wafers. Therefore, since a part of the second process module is substantially idle, there is a disadvantage in that equipment efficiency is low.

On the other hand, as shown in Figure 8, the substrate processing system 100 according to an embodiment of the present invention includes a plurality of process modules (150a, 150b, 150c) capable of simultaneously processing the first thin film and the second thin film can do. In order to be able to compare under the same conditions as the substrate processing system 10 of FIG. 10, the substrate processing system 100 of this embodiment includes three process modules 150a, 150b, and 150c capable of simultaneously processing two wafers. . The three process modules 150a, 150b, and 150c may be respectively located at the side of one transfer module 140, for example.

Since the process modules 150a, 150b, and 150c of the present invention can form both the first thin film and the second thin film, it is possible to load all of the wafers in each of the process modules 150a, 150b, 150c. Accordingly, six wafers are accommodated in the process modules 150a, 150b, and 150c of the substrate processing system 100 of the present embodiment, and two wafers can wait in the load lock chamber 130. Thereafter, the first thin film and the second thin film are simultaneously formed on six wafers in three process modules 150a, 150b, and 150c.

That is, in the case of the general substrate processing system 10, even if the process modules 400, 410a, and 410b accommodate up to 6 wafers, within the time of depositing the first thin film and the second thin film, on a maximum of 4 wafers Only the first thin film and the second thin film could be deposited.

On the other hand, in the substrate processing system 100 of the present embodiment, when the process modules 150a, 150b, and 150c accommodate up to six wafers, within the time of depositing the first thin film and the second thin film, six sheets A first thin film and a second thin film may be deposited on both of the upper portions of the wafer. Therefore, the substrate processing system of the present invention can improve the throughput by 30% or more compared to the prior art.

The present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications can be made by those skilled in the art within the scope of the technical spirit of the present invention. Do.

100: thin film processing apparatus 130: load lock chamber
140: transfer module 150, 150a, 150b, 150c: process module
310: first thin film 320: second thin film

Claims (14)

A process module comprising a chamber;
A transfer module connected to the process module to maintain a vacuum with each other;
A gas supply unit supplying gases required for deposition into the chamber of the process module; And
It includes a control unit for controlling the gas supply of the gas supply unit,
The gas supply unit,
A first gas supply block for supplying gases for depositing a first thin film on a substrate,
A second gas supply block for supplying gases for depositing a second thin film on top of the first thin film, and
Between the gas supply for the first thin film deposition and the gas supply for the second thin film deposition, in order to improve the adhesive properties of the first thin film and the second thin film, seasoning to supply a seasoning gas into the chamber A substrate processing system comprising a gas supply. According to claim 1,
The first gas supply block includes a first process source supply, a first reaction source supply, and a first inert gas supply,
The second gas supply block includes a second process source supply, a second reaction source supply, and a second inert gas supply. According to claim 1,
The control unit controls the seasoning gas supply of the seasoning gas supply unit,
The control unit is a substrate processing system for controlling to supply the seasoning gas into the chamber in a state where the substrate is carried out of the chamber. The method of claim 3,
When the seasoning gas is supplied from the seasoning gas supply unit, the substrate is waiting in the transfer module, the substrate processing system. According to claim 1,
The control unit
And controlling the supply of seasoning gas to the process chamber through the seasoning gas supply unit in the absence of temperature change inside the chamber. According to claim 1,
The control unit
And controlling the supply of seasoning gas to the process chamber through the seasoning gas supply unit while the temperature inside the chamber is varied. According to claim 1,
The first thin film is a silicon nitride film,
The second thin film is an amorphous silicon film,
The seasoning gas is a substrate processing system comprising silicon gas and oxygen gas. A process module having a chamber, a transfer module for maintaining the vacuum with the process module, and a gas supply block for supplying gases for depositing a first thin film in the chamber, gases for depositing a second thin film, and seasoning gas A method of depositing a thin film using a substrate processing system comprising:
Loading a substrate into the chamber of the process module;
Depositing a first thin film on top of the substrate by supplying gases for depositing the first thin film inside the chamber;
Taking the substrate out of the process module;
Supplying the seasoning gas into the chamber to season the interior of the chamber;
Loading the substrate into the chamber; And
And depositing a second thin film on top of the first thin film of the substrate. The method of claim 8,
After the step of depositing the second thin film, further comprising the step of depositing the first thin film,
Between the step of depositing the second thin film and the step of depositing the first thin film,
Taking the substrate out of the process module;
Supplying a seasoning gas into the chamber to season the interior of the chamber; And
And loading the substrate into the chamber. The method of claim 8 or 9,
The first thin film deposition step, the seasoning step, and the second thin film deposition step are all performed in the same temperature band thin film deposition method. The method of claim 8 or 9,
When the deposition temperature of the first thin film and the deposition temperature of the second thin film are different, the seasoning step is performed during a variable temperature range in the chamber. The method of claim 8,
The first thin film is a silicon nitride film,
The second thin film is an amorphous silicon film thin film deposition method. The method of claim 8,
The seasoning gas is a thin film deposition method comprising a silicon gas and oxygen gas. The method of claim 8,
When the seasoning process, the substrate is thin film deposition method characterized in that the standby in the transfer module.

Images