WO2021049306A1 - Film forming method, film forming device, and film forming system - Google Patents

Film forming method, film forming device, and film forming system Download PDF

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Publication number
WO2021049306A1
WO2021049306A1 PCT/JP2020/032287 JP2020032287W WO2021049306A1 WO 2021049306 A1 WO2021049306 A1 WO 2021049306A1 JP 2020032287 W JP2020032287 W JP 2020032287W WO 2021049306 A1 WO2021049306 A1 WO 2021049306A1
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Prior art keywords
film
film forming
etching
gas
pattern
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PCT/JP2020/032287
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French (fr)
Japanese (ja)
Inventor
正 光成
宗仁 加賀谷
康介 山本
佳紀 森貞
剛 守屋
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東京エレクトロン株式会社
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Publication of WO2021049306A1 publication Critical patent/WO2021049306A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the following disclosure relates to a film forming method, a film forming apparatus and a film forming system.
  • Patent Document 1 describes that a substrate having a first base film and a second base film is heated to a predetermined temperature to adsorb a chlorine-containing gas on the surface, and a nitride film is formed using a raw material gas and a nitride gas. Therefore, a technique for selectively forming a nitride film on one of a first base film and a second base film will be disclosed.
  • the present disclosure provides a technique for taking over the shape of a pattern and forming a film on the upper part of the pattern.
  • the film forming method includes a first film forming step, a second film forming step, a first etching step, and a second etching step.
  • the first film is formed on the substrate on which the pattern is formed so that a thick film is formed on the upper part of the pattern.
  • the second film forming step a second film is formed on the upper surface of the first film.
  • etching is performed in which the selection ratio of the first film is higher than that of the second film. The second etching step etches the second film.
  • the shape of the pattern can be inherited and a film can be formed on the upper part of the pattern.
  • FIG. 1 is a flowchart showing an example of the flow of the film forming method according to the embodiment.
  • FIG. 2 is a diagram showing an example of changes in the substrate due to each step of the film forming method according to the embodiment.
  • FIG. 3 is a diagram showing an example of the film forming apparatus according to the embodiment.
  • FIG. 4 is a diagram schematically showing an example of a film forming system according to an embodiment.
  • FIG. 1 is a flowchart showing an example of the flow of the film forming method according to the embodiment.
  • FIG. 2 is a diagram showing an example of changes in the substrate due to each step of the film forming method according to the embodiment.
  • the substrate is a silicon wafer (hereinafter, referred to as “wafer”) and a three-dimensional transistor such as a FinFET is formed on the wafer will be described as an example.
  • a wafer W on which the uneven pattern P is formed on the silicon substrate 10 is prepared (step S1; FIG. 2A).
  • "Fin" standing vertically from the silicon substrate 10 is formed as the pattern P.
  • a hard mask material is applied to a portion corresponding to the upper surface of the film, and an area without the hard mask is etched to form irregularities on the surface of the film. Finally, it is formed by removing the hard mask.
  • an insulating film such as amorphous silicon or SiO2 is used depending on the application.
  • the first film 11 is formed on the wafer W on which the pattern P is formed so as to form a thick film on the upper part of the pattern P (step S2; FIG. 2B).
  • a TiO 2 film is formed by plasma CVD (chemical vapor deposition).
  • the TiO 2 film is formed by generating plasma while supplying a raw material gas, a reaction gas, and a gas for plasma generation.
  • the raw material gas examples include TiCl 4 , tetra (isopropoxy) titanium (TTIP), titanium tetrabromide (TiBr 4 ), titanium tetraiodide (TiI 4 ), tetrakisethylmethylaminotitanium (TEMAT), and tetrakisdimethylamino.
  • Ti-containing gases such as titanium (TDMAT) and tetrakisdiethylaminotitanium (TDEAT).
  • an oxidizing gas such as oxygen (O 2 ) gas can be used.
  • a rare gas such as Ar gas or He gas can be used.
  • the first film 11 is thickly formed on the upper part of the pattern P. Therefore, the pattern P on which the first film 11 is formed has a wider width at the upper part than at the lower part.
  • a second film 12 is formed on the upper surface of the first film 11 (step S3; FIG. 2C).
  • the second film 12 is preferably formed only on the upper surface of the first film 11.
  • a carbon-based protective film is formed as the second film 12 only on the upper surface of the TiO 2 film as the first film 11.
  • the carbon-based protective film include a carbon film.
  • the carbon-based protective film is formed by generating plasma while supplying a raw material gas and a gas for plasma generation.
  • the raw material gas include carbon such as hydrocarbons such as CH 4, C 3 H 6 (CxHy), fluorocarbons such as CF 4 (CxFy), and fluorinated hydrocarbons such as CH 2 F 2 (CxHyFz). Gas can be mentioned.
  • a rare gas such as Ar gas or He gas can be used.
  • the first film 11 is etched using the second film 12 as a mask (step S4; FIG. 2D). For example, etching is performed in which the selectivity of the TiO 2 film is higher than that of the carbon film. For example, while supplying ClF 3 gas, plasma is generated and etching is performed. As a result, in the first film 11, the second film 12 functions as a protective film, the upper surface is protected, and the first film 11 is etched from the side surface side. By adjusting the etching time and the like and performing etching appropriately, the first film 11 can be left on the upper part of the pattern P.
  • etching method As an etching method at this time, it is considered that a chemical method capable of etching both the material of the initial pattern P and the carbon-based material with selectivity is appropriate.
  • plasma etching using a mixed gas of F-based gas and oxygen gas represented by CxFy is used, but the carbon protective film is also scraped at the same time, and both the pattern P material and the TiO 2 film are used. The problem was that it was difficult to obtain the etching selectivity.
  • the TiO 2 film is thermally isotropically etched with ClF 3 gas.
  • ClF 3 gas is used when the pattern P is a SiO 2 oxide film.
  • the temperature is preferably 300 ° C. or lower, more preferably 200 ° C. or lower.
  • the TiO 2 film is thermally isotropically etched using HF gas. At that time, by appropriately controlling the temperature, it is possible to prevent the C film and the pattern P from being thinned.
  • HF is used when the pattern P is Si or amorphous Si.
  • the temperature is preferably 300 ° C. or lower, more preferably 200 ° C. or lower.
  • TiO 2 is etched by wet etching with buffered hydrofluoric acid.
  • the selection ratio of carbon and oxide film is determined by the difference in surface water repellency between the carbon film and the oxide film.
  • the wet etching rate has the selection ratio of wet etching in the order of TiO 2 > SiO 2 > Si, it is possible to etch TiO 2 while leaving the pattern P and the carbon film.
  • the second film 12 is etched and removed (step S5; FIG. 2E). For example, etching is performed in which the selection ratio of the carbon film is higher than that of the TiO 2 film. For example, while supplying H 2 gas, plasma is generated and etching is performed.
  • the carbon-based film may be removed by oxygen gas (O 2 ) plasma or ozone (O 3). As a result, the second film 12 is removed, and the shape of the pattern P is taken over to form the first film 11 on the upper part of the pattern P.
  • step S2 Temperature: 130 ° C Pressure: 2 Torr TiCl 4 gas: 10 sccm O 2 gas: 1000 sccm Ar gas: 1000 sccm Film formation time: 60 seconds
  • step S3 Temperature: 320 ° C Pressure: 1.0 Torr C 3 H 6 gas: 200 sccm Ar gas: 600 sccm Film formation time: 120 seconds
  • step S4 Temperature: 130 ° C Pressure: 2 Torr ClF 3 gas: 10 sccm Etching time: 20 seconds
  • step S5 Temperature: 130 ° C Pressure: 2 Torr O 2 gas: 500 sccm Etching time: 60 seconds
  • steps S2 to S5 are repeated predetermined times as necessary (step S6).
  • a first film 11 having a desired thickness can be formed on the upper part of the pattern P.
  • the film forming method according to the present embodiment can take over the shape of the pattern P and form the first film 11 on the upper part of the pattern P.
  • FIG. 3 is a diagram showing an example of the film forming apparatus according to the embodiment.
  • the film forming apparatus 100 has a substantially cylindrical chamber (processing container) 101.
  • the inner wall surface of the chamber 101 is made of aluminum that has been anodized with OGF (Out Gas Free), for example.
  • OGF Out Gas Free
  • An opening is formed in the center of the bottom of the chamber 101.
  • a cylindrical protrusion 101b is connected to the lower part of the opening.
  • the support member 103 is supported by the protrusion 101b.
  • the main body of the susceptor 102 is made of aluminum, and an insulating ring (not shown) is formed on the outer periphery thereof.
  • the susceptor 102 is provided with a temperature control mechanism 104 for controlling the temperature of the mounted wafer W.
  • the temperature control mechanism 104 can be adjusted to the temperature of the wafer W by, for example, passing a temperature-controlled temperature control medium through a flow path formed in the susceptor 102.
  • the susceptor 102 is provided with three elevating pins (not shown) for transporting the wafer W so as to be recessed from the surface of the susceptor 102.
  • An electrostatic chuck for electrostatically adsorbing the wafer W may be provided on the upper surface of the susceptor 102.
  • a shower head 105 is provided above the susceptor 102.
  • the shower head 105 has a disk-shaped shower plate 106 provided directly below the top wall 101a of the chamber 101 and in which a large number of gas discharge holes 107 are formed.
  • a shower plate 106 for example, a shower plate 106 having a thermal spray coating made of yttria formed on the surface of a main body made of aluminum is used.
  • the shower plate 106 and the chamber 101 are insulated by a ring-shaped insulating member 106a.
  • a gas introduction port 108 is provided in the center of the top wall 101a of the chamber 101.
  • a gas diffusion space 109 is formed between the top wall 101a and the shower plate 106.
  • the gas pipe 110a of the gas supply mechanism 110 is connected to the gas introduction port 108. Then, the gas supplied from the gas supply mechanism 110, which will be described later, is introduced from the gas introduction port 108, diffused into the gas diffusion space 109, and discharged into the chamber 101 from the gas discharge hole 107 of the shower plate 106.
  • the gas supply mechanism 110 has a gas supply source of various gases used for film formation by the film forming method according to the embodiment, and a plurality of gas supply pipes for supplying each gas from the plurality of gas supply sources. ing.
  • the gas supply mechanism 110 is a TiCl 4 gas, O 2 gas, Ar gas, C 3 H. It has a gas supply source that supplies 6 gas, ClF 3 gas, and H 2 gas (none of them are shown).
  • the gas supply mechanism 110 is provided with an on-off valve and a flow rate controller such as a mass flow controller in each gas supply pipe (neither of them is shown), which enables gas switching and gas flow rate control. ing.
  • the gas from these gas supply pipes is supplied to the shower head 105 via the gas pipe 110a described above.
  • a first high frequency power supply 113 is connected to the shower plate 106 via a matching unit 114.
  • High-frequency power is applied to the shower plate 106 from the first high-frequency power source 113 to the shower plate 106.
  • the shower plate 106 functions as an upper electrode
  • the susceptor 102 functions as a lower electrode
  • the shower plate 106 and the susceptor 102 form a pair of parallel plate electrodes.
  • Capacitively coupled plasma is generated in the chamber 101 by applying high frequency power to the shower plate 106.
  • the frequency of the high frequency power output from the first high frequency power supply 113 is preferably set to 450 kHz to 13.56 MHz, and for example, 450 kHz is used.
  • a second high frequency power supply 115 is connected to the susceptor 102 via a matching unit 116.
  • High-frequency power for bias is applied to the susceptor 102 from the second high-frequency power source 115.
  • the ions in the plasma generated in the chamber 101 are drawn into the wafer W.
  • Exhaust ports 121 and 122 are provided at the bottom of the chamber 101.
  • An exhaust mechanism 120 is connected to the exhaust ports 121 and 122.
  • the exhaust mechanism 120 includes a first exhaust pipe 123, a second exhaust pipe 124, a first pressure control valve 125, a dry pump 126, a second pressure control valve 127, and a turbo pump 128.
  • the first exhaust pipe 123 is connected to the exhaust port 121.
  • the second exhaust pipe 124 is connected to the exhaust port 122.
  • the first exhaust pipe 123 is provided with a first pressure control valve 125 and a dry pump 126.
  • the second exhaust pipe 124 is provided with a second pressure control valve 127 and a turbo pump 128.
  • the air is exhausted only by the dry pump 126.
  • the dry pump 126 and the turbo pump 128 are used in combination during the plasma treatment in which the inside of the chamber 101 is set to a low pressure.
  • the pressure control in the chamber 101 is performed by controlling the opening degree of the first pressure control valve 125 and the second pressure control valve 127 based on the detection value of the pressure sensor (not shown) provided in the chamber 101. ..
  • an carry-in outlet 130 for carrying in and out the wafer W to and from a vacuum transfer chamber (not shown) to which the chamber 101 is connected, and a gate valve G for opening and closing the carry-in outlet 130 are provided on the side wall of the chamber 101.
  • the wafer W is conveyed by a transfer mechanism (not shown) provided in the vacuum transfer chamber.
  • the film forming apparatus 100 has a control unit 140.
  • the control unit 140 includes a main control unit, an input device (keyboard, mouse, etc.), an output device (printer, etc.), a display device (display, etc.), and a storage device (storage medium).
  • the main control unit has a CPU (computer) and controls each component of the film forming apparatus 100.
  • the main control unit controls a valve of the gas supply mechanism 110, a mass flow controller, a first high frequency power supply 113, a second high frequency power supply 115, an exhaust mechanism 120, a temperature control mechanism 104, a transport mechanism, a gate valve G, and the like. ..
  • the main control unit of the control unit 140 executes a predetermined operation on the film forming apparatus 100 based on, for example, a processing recipe stored in a storage medium built in the storage device or a storage medium set in the storage device. Let me.
  • the film forming apparatus 100 opens the gate valve G.
  • the transfer mechanism (not shown) moves the wafer W, which is a structure in which the structure shown in FIG. 2A is formed on the entire surface, from the vacuum transfer chamber (not shown) through the carry-in outlet 130 into the chamber 101. And place it on the susceptor 102. After the transfer mechanism is retracted from the chamber 101, the film forming apparatus 100 closes the gate valve G.
  • the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Then, the film forming apparatus 100 supplies power from the first high-frequency power source 113 while supplying TiCl 4 gas, O 2 gas, and Ar gas from the gas supply mechanism 110 into the chamber 101 via the shower head 105. Plasma is generated to form a TiO 2 film. At this time, while the first high frequency power supply 113 is on, the second high frequency power supply 115 may be turned on for ion attraction.
  • the film forming apparatus 100 After the TiO 2 film is formed, the film forming apparatus 100 exhausts the inside of the chamber 101 by the exhaust mechanism 120.
  • the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Then, the film forming apparatus 100 supplies power from the first high-frequency power source 113 while supplying TiCl 4 gas, O 2 gas, and Ar gas from the gas supply mechanism 110 into the chamber 101 via the shower head 105. Plasma is generated to form a carbon film on the upper surface of the TiO 2 film.
  • the film forming apparatus 100 After the carbon film is formed, the film forming apparatus 100 exhausts the inside of the chamber 101 by the exhaust mechanism 120.
  • the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Further, the film forming apparatus 100 etches the TiO 2 film using the carbon film as a mask while supplying ClF 3 gas from the gas supply mechanism 110 into the chamber 101 via the shower head 105.
  • the film forming apparatus 100 After the etching of the TiO 2 film is completed, the film forming apparatus 100 exhausts the inside of the chamber 101 by the exhaust mechanism 120.
  • the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Then, also, the film forming apparatus 100, while supplying into the chamber 101 and H 2 gas from the gas supply mechanism 110 through the showerhead 105, and the plasma generated by supplying electric power from the first RF power source 113 Carbon Etch the film.
  • the film forming apparatus 100 can take over the shape of the pattern P on the wafer W and form a film on the upper part of the pattern P.
  • FIG. 4 is a diagram schematically showing an example of a film forming system according to the embodiment.
  • the film forming system 300 includes a first film forming apparatus 100a, a second film forming apparatus 100b, a first etching apparatus 100c, and a second etching apparatus 100d.
  • the first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, and the second etching apparatus 100d are connected to the four walls of the vacuum transfer chamber 301 having a heptagonal planar shape, respectively, via a gate valve G. Is connected.
  • the inside of the vacuum transfer chamber 301 is exhausted by a vacuum pump and maintained at a predetermined degree of vacuum.
  • the first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, and the second etching apparatus 100d are configured in the same manner as the above-mentioned film forming apparatus 100.
  • the first film forming apparatus 100a is an apparatus for forming a first film 11, for example, a TiO 2 film on the wafer W.
  • the second film forming apparatus 100b is an apparatus for forming a second film 12, for example, a carbon film on the wafer W.
  • the first etching apparatus 100c is an apparatus for etching the TiO 2 film on the wafer W using the carbon film as a mask.
  • the second etching apparatus 100d is an apparatus for etching the carbon film on the wafer W.
  • Three load lock chambers 302 are connected to the other three walls of the vacuum transfer chamber 301 via a gate valve G1.
  • An air transport chamber 303 is provided on the opposite side of the vacuum transport chamber 301 with the load lock chamber 302 in between.
  • the three load lock chambers 302 are connected to the air transport chamber 303 via a gate valve G2.
  • the load lock chamber 302 controls the pressure between the atmospheric pressure and the vacuum when the wafer W is transported between the atmospheric transport chamber 303 and the vacuum transport chamber 301.
  • the wall portion of the air transport chamber 303 opposite to the load lock chamber 302 mounting wall portion has three carrier mounting ports 305 for mounting a carrier (FOUP, etc.) C for accommodating the wafer W. Further, an alignment chamber 304 for aligning the wafer W is provided on the side wall of the air transfer chamber 303. A downflow of clean air is formed in the air transport chamber 303.
  • a transfer mechanism 306 is provided in the vacuum transfer chamber 301.
  • the transfer mechanism 306 transfers the wafer W to the first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, the second etching apparatus 100d, and the load lock chamber 302.
  • the transport mechanism 306 has two transport arms 307a and 307b that can move independently.
  • a transport mechanism 308 is provided in the atmospheric transport chamber 303.
  • the transfer mechanism 308 transfers the wafer W to the carrier C, the load lock chamber 302, and the alignment chamber 304.
  • the film forming system 300 has an overall control unit 310.
  • the overall control unit 310 includes a main control unit, an input device (keyboard, mouse, etc.), an output device (printer, etc.), a display device (display, etc.), and a storage device (storage medium).
  • the main control unit has a CPU (computer) and controls each component of the first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, and the second etching apparatus 100d. Further, the main control unit includes an exhaust mechanism and a transport mechanism 306 of the vacuum transport chamber 301, an exhaust mechanism and a gas supply mechanism of the load lock chamber 302, a transport mechanism 308 of the transport mechanism 308 of the atmospheric transport chamber 303, and gate valves G and G1.
  • the main control unit of the overall control unit 310 performs a predetermined operation on the film forming system 300 based on, for example, a storage medium built in the storage device or a processing recipe stored in the storage medium set in the storage device. Let it run.
  • the overall control unit 310 may be a higher-level control unit of the control unit of each unit such as the control unit 140.
  • the film forming system 300 takes out the wafer W from the carrier C connected to the atmospheric transport chamber 303 by the transport mechanism 308.
  • the film forming system 300 opens the gate valve G2 of one of the load lock chambers 302, and carries the wafer W into the load lock chamber 302 by the transfer mechanism 308.
  • the film forming system 300 retracts the transport mechanism 308 from the load lock chamber 302, closes the gate valve G2, and evacuates the inside of the load lock chamber 302.
  • the gate valve G1 is opened when the load lock chamber 302 carrying the wafer W reaches a predetermined degree of vacuum, and the transfer arm 307a or 307b of the transfer mechanism 306 is used to move the wafer W from the load lock chamber 302. Take out the wafer W.
  • the film forming system 300 opens the gate valve G of the first film forming apparatus 100a and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the first film forming apparatus 100a.
  • the film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the first film forming apparatus 100a.
  • the first film forming apparatus 100a forms the first film 11 so as to form a thick film on the upper part of the pattern P with respect to the wafer W.
  • the film forming system 300 opens the gate valve G of the first film forming apparatus 100a, and the first film forming apparatus 100a is provided by either the conveying arm 307a or 307b of the conveying mechanism 306.
  • the wafer W is carried out from the inside.
  • the film forming system 300 opens the gate valve G of the second film forming apparatus 100b and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the second film forming apparatus 100b.
  • the film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the second film forming apparatus 100b.
  • the second film forming apparatus 100b forms a second film 12 on the upper surface of the first film 11 of the wafer W.
  • the film forming system 300 opens the gate valve G of the second film forming apparatus 100b, and the second film forming apparatus 100b is used by either the conveying arm 307a or 307b of the conveying mechanism 306.
  • the wafer W is carried out from the inside.
  • the film forming system 300 opens the gate valve G of the first etching apparatus 100c and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the first etching apparatus 100c.
  • the film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the first etching apparatus 100c.
  • the first etching apparatus 100c etches the first film 11 on the wafer W using the second film 12 as a mask.
  • the film forming system 300 opens the gate valve G of the first etching device 100c, and the transfer arm 307a or 307b of the transfer mechanism 306 is used to remove the gate valve G from the first etching device 100c.
  • the wafer W is carried out.
  • the film forming system 300 opens the gate valve G of the second etching apparatus 100d and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the second etching apparatus 100d.
  • the film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the second etching apparatus 100d.
  • the second etching apparatus 100d etches the second film 12 on the wafer W.
  • the film forming system 300 opens the gate valve G of the second etching device 100d, and the transfer arm 307a or 307b of the transfer mechanism 306 is used to remove the second etching device 100d from the inside of the second etching device 100d.
  • the wafer W is carried out.
  • the film forming system 300 opens the gate valve G1 of any of the load lock chambers 302, and carries the wafer W on the transfer arm into the load lock chamber 302.
  • the film forming system 300 returns the inside of the load lock chamber 302 carrying the wafer W to the atmosphere, opens the gate valve G2, and returns the wafer W in the load lock chamber 302 to the carrier C by the transport mechanism 308.
  • the film forming system 300 performs the above processing on a plurality of wafers W in parallel to form a film on a predetermined number of wafers W.
  • the first film 11 is formed on the wafer W on which the pattern P is formed so as to form a thick film on the upper part of the pattern.
  • the film forming method is to form a second film 12 on the upper surface of the first film 11.
  • etching is performed in which the selection ratio of the first film 11 is higher than that of the second film 12.
  • the second film 12 is etched.
  • a TiO 2 film is formed as the first film 11 on the upper part of the pattern P by plasma CVD.
  • a carbon-based protective film is formed as a second film 12 on the upper surface of the TiO 2 film.
  • etching is performed in which the selection ratio of the TiO 2 film is higher than that of the carbon-based protective film.
  • the film forming method according to the present embodiment C 3 H 6 gas, the upper surface of the first film 11 to generate plasma while supplying Ar gas, as a second layer 12, forming a carbon film To do.
  • the upper surface of the first film 11 can be protected by the carbon film, and the first film 11 can be etched from the side surface side with a high selective ratio.
  • the film forming method according to the embodiment can be generally applied when it is desired to take over the shape of the pattern and form a film on the upper part of the pattern.
  • the present invention is not limited to this.
  • the first film 11 may be a different type of film from the pattern P.
  • the etching of the first film 11 the etching in which the selection ratio of the first film 11 is higher than that of the second film 12 and the pattern P is performed.
  • the film forming system 300 a case where the first film 11 and the second film 12 are separately formed by the first film forming apparatus 100a and the second film forming apparatus 100b will be described as an example. However, there is nothing limited to this.
  • the film formation of the first film 11 and the film formation of the second film 12 may be carried out by the same film forming apparatus.
  • the film forming system 300 may have one film forming apparatus, and the film forming apparatus may be used to form the first film 11 and the second film 12.
  • the film forming system 300 a case where the etching of the first film 11 and the etching of the second film 12 are separately performed by the first etching apparatus 100c and the second etching apparatus 100d has been described as an example. There is nothing limited. The etching of the first film 11 and the etching of the second film 12 may be performed by the same etching apparatus.
  • the film forming system 300 may have one etching apparatus, and the etching apparatus may perform etching of the first film 11 and etching of the second film 12.
  • the substrate may be any substrate such as a compound semiconductor, a glass substrate, and a ceramics substrate.

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Abstract

Provided is a film forming method comprising a first film forming step, a second film forming step, a first etching step, and a second etching step. The first film forming step involves forming a first film on a substrate having a pattern formed thereon so that the first film is formed thickly on the upper part of the pattern. The second film forming step involves forming a second film on the upper surface of the first film. The first etching step involves etching with a higher selectivity for the first film than the second film. The second etching step involves etching the second film.

Description

成膜方法、成膜装置および成膜システムFilm formation method, film formation equipment and film formation system
　以下の開示は、成膜方法、成膜装置および成膜システムに関する。 The following disclosure relates to a film forming method, a film forming apparatus and a film forming system.
　特許文献１は、第１の下地膜と第２の下地膜を有する基板を所定温度に加熱して表面に塩素含有ガスを吸着させ、原料ガスおよび窒化ガスを用いて窒化膜を成膜することで、第１の下地膜および第２の下地膜の一方に選択的に窒化膜を形成する技術を開示する。 Patent Document 1 describes that a substrate having a first base film and a second base film is heated to a predetermined temperature to adsorb a chlorine-containing gas on the surface, and a nitride film is formed using a raw material gas and a nitride gas. Therefore, a technique for selectively forming a nitride film on one of a first base film and a second base film will be disclosed.
特開２０１７－１７４９１９号公報Japanese Unexamined Patent Publication No. 2017-174919
　本開示は、パターンの形状を引き継いでパターンの上部に成膜する技術を提供する。 The present disclosure provides a technique for taking over the shape of a pattern and forming a film on the upper part of the pattern.
　本開示の一態様による成膜方法は、第１成膜工程と、第２成膜工程と、第１エッチング工程と、第２エッチング工程とを有する。第１成膜工程は、パターンが形成された基板に前記パターンの上部で厚く成膜されるように第１の膜を成膜する。第２成膜工程は、第１の膜の上面に第２の膜を成膜する。第１エッチング工程は、第２の膜よりも第１の膜の選択比が高いエッチングを実施する。第２エッチング工程は、第２の膜をエッチングする。 The film forming method according to one aspect of the present disclosure includes a first film forming step, a second film forming step, a first etching step, and a second etching step. In the first film forming step, the first film is formed on the substrate on which the pattern is formed so that a thick film is formed on the upper part of the pattern. In the second film forming step, a second film is formed on the upper surface of the first film. In the first etching step, etching is performed in which the selection ratio of the first film is higher than that of the second film. The second etching step etches the second film.
　本開示によれば、パターンの形状を引き継いでパターンの上部に成膜できる。 According to the present disclosure, the shape of the pattern can be inherited and a film can be formed on the upper part of the pattern.
図１は、実施形態に係る成膜方法の流れの一例を示すフローチャートである。FIG. 1 is a flowchart showing an example of the flow of the film forming method according to the embodiment. 図２は、実施形態に係る成膜方法の各工程による基板の変化の一例を示す図である。FIG. 2 is a diagram showing an example of changes in the substrate due to each step of the film forming method according to the embodiment. 図３は、実施形態に係る成膜装置の一例を示す図である。FIG. 3 is a diagram showing an example of the film forming apparatus according to the embodiment. 図４は、実施形態に係る成膜システムの一例を概略的に示す図である。FIG. 4 is a diagram schematically showing an example of a film forming system according to an embodiment.
　以下、図面を参照して本願の開示する成膜方法、成膜装置および成膜システムの実施形態について詳細に説明する。なお、本実施形態により、開示する成膜方法、成膜装置および成膜システムが限定されるものではない。 Hereinafter, embodiments of the film forming method, the film forming apparatus, and the film forming system disclosed in the present application will be described in detail with reference to the drawings. It should be noted that the present embodiment does not limit the disclosed film forming method, film forming apparatus and film forming system.
　ところで、露光光源の短波長化、液浸露光、ダブルパターニングといった技術によって、半導体の加工寸法の微細化が進んでいる。一方、露光によるパターニングコスト増加、配線層へのコンタクトホール形成時のアライメントエラー等が先端プロセスで問題となっている。 By the way, the processing dimensions of semiconductors are becoming finer due to technologies such as shortening the wavelength of the exposure light source, immersion exposure, and double patterning. On the other hand, an increase in patterning cost due to exposure, an alignment error when forming a contact hole in the wiring layer, and the like have become problems in the advanced process.
　そこで、パターニングコストの低減やアライメントエラーの防止を目的として、下地に形成されたパターンの形状を引き継いでパターンの上部に成膜する技術が期待されている。 Therefore, for the purpose of reducing the patterning cost and preventing alignment errors, a technique of taking over the shape of the pattern formed on the base and forming a film on the upper part of the pattern is expected.
　＜成膜方法＞
　最初に、実施形態に係る成膜方法について図１および図２を参照して説明する。図１は、実施形態に係る成膜方法の流れの一例を示すフローチャートである。図２は、実施形態に係る成膜方法の各工程による基板の変化の一例を示す図である。 <Film formation method>
First, the film forming method according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a flowchart showing an example of the flow of the film forming method according to the embodiment. FIG. 2 is a diagram showing an example of changes in the substrate due to each step of the film forming method according to the embodiment.
　本実施形態では、基板をシリコンウエハ（以下、「ウエハ」と称する。）とし、ウエハにＦｉｎＦＥＴなどの３次元トランジスタを形成する場合を例に説明する。 In the present embodiment, a case where the substrate is a silicon wafer (hereinafter, referred to as “wafer”) and a three-dimensional transistor such as a FinFET is formed on the wafer will be described as an example.
　最初に、シリコン基体１０上に凹凸のパターンＰが形成されたウエハＷを準備する（ステップＳ１；図２（ａ））。ウエハＷは、パターンＰとして、シリコン基体１０から垂直に立った「Ｆｉｎ」が形成されている。パターンＰは、例えば、ウエハＷ上にパターンＰとなる膜を成膜した後、膜の上面にあたる部分にハードマスク素材を塗布し、ハードマスクのないエリアをエッチングして膜の表面に凹凸を作り、最後に、ハードマスクを除去することで形成する。パターンＰの材料としてはアモルファスシリコンやＳｉＯ２等の絶縁膜が用途に応じて使用される。 First, a wafer W on which the uneven pattern P is formed on the silicon substrate 10 is prepared (step S1; FIG. 2A). In the wafer W, "Fin" standing vertically from the silicon substrate 10 is formed as the pattern P. In the pattern P, for example, after forming a film to be the pattern P on the wafer W, a hard mask material is applied to a portion corresponding to the upper surface of the film, and an area without the hard mask is etched to form irregularities on the surface of the film. Finally, it is formed by removing the hard mask. As the material of the pattern P, an insulating film such as amorphous silicon or SiO2 is used depending on the application.
　次に、パターンＰが形成されたウエハＷに対してパターンＰの上部で厚く成膜されるように第１の膜１１を成膜する（ステップＳ２；図２（ｂ））。例えば、第１の膜１１として、ＴｉＯ２膜をプラズマＣＶＤ（chemical　vapor　deposition）により成膜する。ＴｉＯ２膜は、原料ガスと、反応ガスと、プラズマ生成用のガスと供給しつつプラズマを生成して成膜する。原料ガスとしては、例えば、ＴｉＣｌ４、テトラ（イソプロポキシ）チタン（ＴＴＩＰ）、四臭化チタン（ＴｉＢｒ４）、四ヨウ化チタン（ＴｉＩ４）、テトラキスエチルメチルアミノチタン（ＴＥＭＡＴ）、テトラキスジメチルアミノチタン（ＴＤＭＡＴ）、テトラキスジエチルアミノチタン（ＴＤＥＡＴ）等のＴｉ含有ガスが挙げられる。反応ガスとしては、酸素（Ｏ２）ガス等の酸化ガスを用いることができる。プラズマ生成用のガスとしては、Ａｒガス、Ｈｅガス等の希ガスを用いることができる。第１の膜１１は、パターンＰの上部で厚く成膜される。このため、第１の膜１１が成膜されたパターンＰは、下部よりも上部で幅が広くなる。 Next, the first film 11 is formed on the wafer W on which the pattern P is formed so as to form a thick film on the upper part of the pattern P (step S2; FIG. 2B). For example, as the first film 11, a TiO 2 film is formed by plasma CVD (chemical vapor deposition). The TiO 2 film is formed by generating plasma while supplying a raw material gas, a reaction gas, and a gas for plasma generation. Examples of the raw material gas include TiCl 4 , tetra (isopropoxy) titanium (TTIP), titanium tetrabromide (TiBr 4 ), titanium tetraiodide (TiI 4 ), tetrakisethylmethylaminotitanium (TEMAT), and tetrakisdimethylamino. Examples thereof include Ti-containing gases such as titanium (TDMAT) and tetrakisdiethylaminotitanium (TDEAT). As the reaction gas, an oxidizing gas such as oxygen (O 2 ) gas can be used. As the gas for plasma generation, a rare gas such as Ar gas or He gas can be used. The first film 11 is thickly formed on the upper part of the pattern P. Therefore, the pattern P on which the first film 11 is formed has a wider width at the upper part than at the lower part.
　次に、第１の膜１１の上面に第２の膜１２を成膜する（ステップＳ３；図２（ｃ））。第２の膜１２は、第１の膜１１の上面のみに成膜することが好ましい。例えば、プラズマＣＶＤにより、第１の膜１１としてのＴｉＯ２膜の上面のみに、第２の膜１２として、カーボン系保護膜を成膜する。カーボン系保護膜としては、例えば、カーボン膜が挙げられる。カーボン系保護膜は、原料ガスと、プラズマ生成用のガスと供給しつつプラズマを生成して成膜する。原料ガスとしては、例えば、ＣＨ４、Ｃ３Ｈ６等の炭化水素（ＣｘＨｙ）、ＣＦ４等のフッ化炭素（ＣｘＦｙ）、ＣＨ２Ｆ２等のフッ素化炭化水素（ＣｘＨｙＦｚ）等のカーボン含有ガスが挙げられる。プラズマ生成用のガスとしては、Ａｒガス、Ｈｅガス等の希ガスを用いることができる。 Next, a second film 12 is formed on the upper surface of the first film 11 (step S3; FIG. 2C). The second film 12 is preferably formed only on the upper surface of the first film 11. For example, by plasma CVD, a carbon-based protective film is formed as the second film 12 only on the upper surface of the TiO 2 film as the first film 11. Examples of the carbon-based protective film include a carbon film. The carbon-based protective film is formed by generating plasma while supplying a raw material gas and a gas for plasma generation. Examples of the raw material gas include carbon such as hydrocarbons such as CH 4, C 3 H 6 (CxHy), fluorocarbons such as CF 4 (CxFy), and fluorinated hydrocarbons such as CH 2 F 2 (CxHyFz). Gas can be mentioned. As the gas for plasma generation, a rare gas such as Ar gas or He gas can be used.
　次に、第２の膜１２をマスクとして第１の膜１１をエッチングする（ステップＳ４；図２（ｄ））。例えば、カーボン膜よりもＴｉＯ２膜の選択比が高いエッチングを実施する。例えば、ＣｌＦ３ガスを供給しつつ、プラズマを生成してエッチングを実施する。これにより、第１の膜１１は、第２の膜１２が保護膜として機能し、上面が保護され、側面側からエッチングされる。エッチング時間などを調整して適切にエッチングを実施することで、パターンＰの上部に第１の膜１１を残すことができる。 Next, the first film 11 is etched using the second film 12 as a mask (step S4; FIG. 2D). For example, etching is performed in which the selectivity of the TiO 2 film is higher than that of the carbon film. For example, while supplying ClF 3 gas, plasma is generated and etching is performed. As a result, in the first film 11, the second film 12 functions as a protective film, the upper surface is protected, and the first film 11 is etched from the side surface side. By adjusting the etching time and the like and performing etching appropriately, the first film 11 can be left on the upper part of the pattern P.
　この際のエッチング手法としては、初期パターンＰの材料とカーボン系材料両方に選択性を持ってエッチングできる化学的手法が適当であると考えられる。従来手法の一例ではＣｘＦｙに代表されるＦ系ガスと酸素ガスの混合ガスによるプラズマエッチングが使用されるが、カーボン保護膜も同時に削れてしまうことや、パターンＰ材料・ＴｉＯ２膜の両方とのエッチング選択比を取ることが困難であることが課題であった。 As an etching method at this time, it is considered that a chemical method capable of etching both the material of the initial pattern P and the carbon-based material with selectivity is appropriate. In an example of the conventional method, plasma etching using a mixed gas of F-based gas and oxygen gas represented by CxFy is used, but the carbon protective film is also scraped at the same time, and both the pattern P material and the TiO 2 film are used. The problem was that it was difficult to obtain the etching selectivity.
　本研究の実施形態の一例では、ＣｌＦ３ガスを用いてＴｉＯ２膜を熱的に等方エッチングする。ＣｌＦ３ガスはパターンＰがＳｉＯ２酸化膜である場合に用いられる。その際に温度を適切に制御することでＣ膜とパターンＰの減膜を防ぐことができる。その温度として好ましくは３００℃以下、さらに好ましくは２００℃以下が選択される。 In one example of the embodiment of this study, the TiO 2 film is thermally isotropically etched with ClF 3 gas. ClF 3 gas is used when the pattern P is a SiO 2 oxide film. At that time, by appropriately controlling the temperature, it is possible to prevent the C film and the pattern P from being thinned. The temperature is preferably 300 ° C. or lower, more preferably 200 ° C. or lower.
　また本研究の実施形態の一例では、ＨＦガスを用いてＴｉＯ２膜を熱的に等方エッチングする。その際に温度を適切に制御することでＣ膜とパターンＰの減膜を防ぐことができる。ＨＦはパターンＰがＳｉあるいはアモルファスＳｉである場合に用いられる。その温度として好ましくは３００℃以下、さらに好ましくは２００℃以下が選択される。 Further, in an example of the embodiment of this study, the TiO 2 film is thermally isotropically etched using HF gas. At that time, by appropriately controlling the temperature, it is possible to prevent the C film and the pattern P from being thinned. HF is used when the pattern P is Si or amorphous Si. The temperature is preferably 300 ° C. or lower, more preferably 200 ° C. or lower.
　また本研究の実施形態の一例では、バッファードフッ化水素酸によるウェットエッチングを用いてＴｉＯ２をエッチングする。この場合、カーボン膜と酸化膜の表面撥水性の違いによりカーボンと酸化膜の選択比が生じる。またウェットエッチングレートはＴｉＯ２＞ＳｉＯ２＞Ｓｉの順にウェットエッチングの選択比を持つためパターンＰとカーボン膜を残したままＴｉＯ２のエッチングが可能である。 Further, in an example of the embodiment of this study, TiO 2 is etched by wet etching with buffered hydrofluoric acid. In this case, the selection ratio of carbon and oxide film is determined by the difference in surface water repellency between the carbon film and the oxide film. Further, since the wet etching rate has the selection ratio of wet etching in the order of TiO 2 > SiO 2 > Si, it is possible to etch TiO 2 while leaving the pattern P and the carbon film.
　次に、第２の膜１２をエッチングして除去する（ステップＳ５；図２（ｅ））。例えば、ＴｉＯ２膜よりもカーボン膜の選択比が高いエッチングを実施する。例えば、Ｈ２ガスを供給しつつ、プラズマを生成してエッチングを実施する。なお、カーボン系膜は、酸素ガス（Ｏ２）のプラズマやオゾン（Ｏ３）により除去してもよい。これにより、第２の膜１２が除去され、パターンＰの形状を引き継いでパターンＰの上部に第１の膜１１が形成される。 Next, the second film 12 is etched and removed (step S5; FIG. 2E). For example, etching is performed in which the selection ratio of the carbon film is higher than that of the TiO 2 film. For example, while supplying H 2 gas, plasma is generated and etching is performed. The carbon-based film may be removed by oxygen gas (O 2 ) plasma or ozone (O 3). As a result, the second film 12 is removed, and the shape of the pattern P is taken over to form the first film 11 on the upper part of the pattern P.
　ここで、実施形態に係る成膜方法のプロセス条件の一例をまとめて以下に記載する。 Here, an example of the process conditions of the film forming method according to the embodiment is summarized below.
・ＴｉＯ２膜の成膜（ステップＳ２）
温度：１３０℃
圧力：２Ｔｏｒｒ
ＴｉＣｌ４ガス：１０ｓｃｃｍ
Ｏ２ガス：１０００ｓｃｃｍ
Ａｒガス：１０００ｓｃｃｍ
成膜時間：６０秒 -Titanium 2 film film formation (step S2)
Temperature: 130 ° C
Pressure: 2 Torr
TiCl 4 gas: 10 sccm
O 2 gas: 1000 sccm
Ar gas: 1000 sccm
Film formation time: 60 seconds
・カーボン膜の成膜（ステップＳ３）
温度：３２０℃
圧力：１．０Ｔｏｒｒ
Ｃ３Ｈ６ガス：２００ｓｃｃｍ
Ａｒガス：６００ｓｃｃｍ
成膜時間：１２０秒 -Carbon film formation (step S3)
Temperature: 320 ° C
Pressure: 1.0 Torr
C 3 H 6 gas: 200 sccm
Ar gas: 600 sccm
Film formation time: 120 seconds
・ＴｉＯ２膜のエッチング（ステップＳ４）
温度：１３０℃
圧力：２Ｔｏｒｒ
ＣｌＦ３ガス：１０ｓｃｃｍ
エッチング時間：２０秒 -Etching of TiO 2 film (step S4)
Temperature: 130 ° C
Pressure: 2 Torr
ClF 3 gas: 10 sccm
Etching time: 20 seconds
・カーボン膜のエッチング（ステップＳ５）
温度：１３０℃
圧力：２Ｔｏｒｒ
Ｏ２ガス：５００ｓｃｃｍ
エッチング時間：６０秒 -Etching of carbon film (step S5)
Temperature: 130 ° C
Pressure: 2 Torr
O 2 gas: 500 sccm
Etching time: 60 seconds
　本実施形態に係る成膜方法では、ステップＳ２～Ｓ５の処理を必要に応じて所定回繰り返す（ステップＳ６）。これによりパターンＰの上部に所望の厚さの第１の膜１１を形成できる。 In the film forming method according to the present embodiment, the processes of steps S2 to S5 are repeated predetermined times as necessary (step S6). As a result, a first film 11 having a desired thickness can be formed on the upper part of the pattern P.
　以上のように、本実施形態に係る成膜方法は、パターンＰの形状を引き継いでパターンＰの上部に第１の膜１１を成膜できる。 As described above, the film forming method according to the present embodiment can take over the shape of the pattern P and form the first film 11 on the upper part of the pattern P.
　＜成膜方法装置＞
　次に、上記の成膜方法の実施に用いられる成膜装置の一例について説明する。図３は、実施形態に係る成膜装置の一例を示す図である。 <Film formation method equipment>
Next, an example of a film forming apparatus used for carrying out the above film forming method will be described. FIG. 3 is a diagram showing an example of the film forming apparatus according to the embodiment.
　成膜装置１００は、略円筒状のチャンバー（処理容器）１０１を有している。チャンバー１０１は、例えば内壁面がＯＧＦ（Ｏｕｔ　Ｇａｓ　Ｆｒｅｅ）陽極酸化処理が施されたアルミニウムで構成されている。 The film forming apparatus 100 has a substantially cylindrical chamber (processing container) 101. The inner wall surface of the chamber 101 is made of aluminum that has been anodized with OGF (Out Gas Free), for example.
　チャンバー１０１の内部には、図２（ａ）に示す構造が全面に形成された構造体であるウエハＷ（基板）を水平に支持するためのサセプタ１０２が、中央下部に設けられた円筒状の支持部材１０３により支持された状態で配置されている。チャンバー１０１の底部の中央には、開口部が形成されている。開口部の下部には、円筒状の突出部１０１ｂが接続されている。支持部材１０３は、突出部１０１ｂに支持されている。 Inside the chamber 101, a cylindrical susceptor 102 for horizontally supporting the wafer W (board), which is a structure in which the structure shown in FIG. 2A is formed on the entire surface, is provided in a cylindrical shape at the lower center. It is arranged in a state of being supported by the support member 103. An opening is formed in the center of the bottom of the chamber 101. A cylindrical protrusion 101b is connected to the lower part of the opening. The support member 103 is supported by the protrusion 101b.
　サセプタ１０２は、例えば、本体部がアルミニウムからなり、その外周に絶縁リング（図示せず）が形成されている。サセプタ１０２は、載置されたウエハＷの温調を行うための温調機構１０４が内部に設けられている。温調機構１０４は、例えば、サセプタ１０２に形成された流路に温度制御された温調媒体を通流させることにより、ウエハＷの温度に調整可能とされている。 The main body of the susceptor 102 is made of aluminum, and an insulating ring (not shown) is formed on the outer periphery thereof. The susceptor 102 is provided with a temperature control mechanism 104 for controlling the temperature of the mounted wafer W. The temperature control mechanism 104 can be adjusted to the temperature of the wafer W by, for example, passing a temperature-controlled temperature control medium through a flow path formed in the susceptor 102.
　サセプタ１０２は、ウエハＷを搬送するための３本の昇降ピン（図示せず）が、サセプタ１０２の表面に対して突没可能に設けられている。サセプタ１０２の上面に、ウエハＷを静電吸着するための静電チャックが設けられていてもよい。 The susceptor 102 is provided with three elevating pins (not shown) for transporting the wafer W so as to be recessed from the surface of the susceptor 102. An electrostatic chuck for electrostatically adsorbing the wafer W may be provided on the upper surface of the susceptor 102.
　チャンバー１０１は、シャワーヘッド１０５がサセプタ１０２の上部に設けられている。シャワーヘッド１０５は、チャンバー１０１の天壁１０１ａの直下に設けられた、円盤状をなし、多数のガス吐出孔１０７が形成されたシャワープレート１０６を有している。シャワープレート１０６としては、例えば、アルミニウムからなる本体の表面にイットリアからなる溶射皮膜が形成されたものが用いられる。シャワープレート１０６とチャンバー１０１とは、リング状の絶縁部材１０６ａにより絶縁されている。 In the chamber 101, a shower head 105 is provided above the susceptor 102. The shower head 105 has a disk-shaped shower plate 106 provided directly below the top wall 101a of the chamber 101 and in which a large number of gas discharge holes 107 are formed. As the shower plate 106, for example, a shower plate 106 having a thermal spray coating made of yttria formed on the surface of a main body made of aluminum is used. The shower plate 106 and the chamber 101 are insulated by a ring-shaped insulating member 106a.
　チャンバー１０１の天壁１０１ａの中央には、ガス導入口１０８が設けられている。天壁１０１ａとシャワープレート１０６との間は、ガス拡散空間１０９となっている。 A gas introduction port 108 is provided in the center of the top wall 101a of the chamber 101. A gas diffusion space 109 is formed between the top wall 101a and the shower plate 106.
　ガス導入口１０８には、ガス供給機構１１０のガス配管１１０ａが接続されている。そして、後述するガス供給機構１１０から供給されたガスが、ガス導入口１０８から導入され、ガス拡散空間１０９内に拡散されてシャワープレート１０６のガス吐出孔１０７からチャンバー１０１内に吐出される。 The gas pipe 110a of the gas supply mechanism 110 is connected to the gas introduction port 108. Then, the gas supplied from the gas supply mechanism 110, which will be described later, is introduced from the gas introduction port 108, diffused into the gas diffusion space 109, and discharged into the chamber 101 from the gas discharge hole 107 of the shower plate 106.
　ガス供給機構１１０は、実施形態に係る成膜方法による成膜に用いる各種のガスのガス供給源と、これら複数のガス供給源から各ガスを供給するための複数のガス供給配管とを有している。例えば、第１の膜１１としてＴｉＯ２膜を成膜し、第２の膜１２としてカーボン膜を成膜する場合、ガス供給機構１１０は、ＴｉＣｌ４ガス、Ｏ２ガス、Ａｒガス、Ｃ３Ｈ６ガス、ＣｌＦ３ガス、Ｈ２ガスを供給するガス供給源を有している（いずれも図示せず）。ガス供給機構１１０は、各ガス供給配管に、開閉バルブと、マスフローコントローラ等の流量制御器とが設けられ（いずれも図示せず）、これらによりガスの切り替え、およびガスの流量制御が可能とされている。これらのガス供給配管からのガスは、上述のガス配管１１０ａを経てシャワーヘッド１０５に供給される。 The gas supply mechanism 110 has a gas supply source of various gases used for film formation by the film forming method according to the embodiment, and a plurality of gas supply pipes for supplying each gas from the plurality of gas supply sources. ing. For example, when a TiO 2 film is formed as the first film 11 and a carbon film is formed as the second film 12, the gas supply mechanism 110 is a TiCl 4 gas, O 2 gas, Ar gas, C 3 H. It has a gas supply source that supplies 6 gas, ClF 3 gas, and H 2 gas (none of them are shown). The gas supply mechanism 110 is provided with an on-off valve and a flow rate controller such as a mass flow controller in each gas supply pipe (neither of them is shown), which enables gas switching and gas flow rate control. ing. The gas from these gas supply pipes is supplied to the shower head 105 via the gas pipe 110a described above.
　シャワープレート１０６には、整合器１１４を介して第１の高周波電源１１３が接続されている。シャワープレート１０６には、第１の高周波電源１１３からシャワープレート１０６に高周波電力が印加される。シャワープレート１０６が上部電極として機能し、サセプタ１０２が下部電極として機能して、シャワープレート１０６とサセプタ１０２が一対の平行平板電極を構成する。シャワープレート１０６に高周波電力が印加されることにより、チャンバー１０１内には、容量結合プラズマが生成される。第１の高周波電源１１３から出力される高周波電力の周波数は、４５０ｋＨｚ～１３．５６ＭＨｚに設定されることが好ましく、例えば４５０ｋＨｚが用いられる。 A first high frequency power supply 113 is connected to the shower plate 106 via a matching unit 114. High-frequency power is applied to the shower plate 106 from the first high-frequency power source 113 to the shower plate 106. The shower plate 106 functions as an upper electrode, the susceptor 102 functions as a lower electrode, and the shower plate 106 and the susceptor 102 form a pair of parallel plate electrodes. Capacitively coupled plasma is generated in the chamber 101 by applying high frequency power to the shower plate 106. The frequency of the high frequency power output from the first high frequency power supply 113 is preferably set to 450 kHz to 13.56 MHz, and for example, 450 kHz is used.
　一方、サセプタ１０２には、整合器１１６を介して第２の高周波電源１１５が接続されている。サセプタ１０２には、第２の高周波電源１１５からサセプタ１０２にバイアス用の高周波電力が印加される。サセプタ１０２にバイアス用の高周波を印加することにより、チャンバー１０１内に生成されたプラズマ中のイオンがウエハＷに引き込まれる。 On the other hand, a second high frequency power supply 115 is connected to the susceptor 102 via a matching unit 116. High-frequency power for bias is applied to the susceptor 102 from the second high-frequency power source 115. By applying a high frequency for bias to the susceptor 102, the ions in the plasma generated in the chamber 101 are drawn into the wafer W.
　チャンバー１０１の底部には、排気口１２１、１２２が設けられている。排気口１２１、１２２には、排気機構１２０が接続されている。排気機構１２０は、第１排気配管１２３と、第２排気配管１２４と、第１圧力制御バルブ１２５と、ドライポンプ１２６と、第２圧力制御バルブ１２７と、ターボポンプ１２８とを有している。第１排気配管１２３は、排気口１２１に接続されている。第２排気配管１２４は、排気口１２２に接続されている。第１排気配管１２３には、第１圧力制御バルブ１２５およびドライポンプ１２６が設けられている。第２排気配管１２４には、第２圧力制御バルブ１２７およびターボポンプ１２８が設けられている。チャンバー１０１内が高圧に設定される成膜処理の際にはドライポンプ１２６のみで排気される。チャンバー１０１内が低圧に設定されるプラズマ処理の際にはドライポンプ１２６とターボポンプ１２８とが併用される。チャンバー１０１内の圧力制御は、チャンバー１０１に設けられた圧力センサー（図示せず）の検出値に基づいて第１圧力制御バルブ１２５および第２圧力制御バルブ１２７の開度を制御することによりなされる。 Exhaust ports 121 and 122 are provided at the bottom of the chamber 101. An exhaust mechanism 120 is connected to the exhaust ports 121 and 122. The exhaust mechanism 120 includes a first exhaust pipe 123, a second exhaust pipe 124, a first pressure control valve 125, a dry pump 126, a second pressure control valve 127, and a turbo pump 128. The first exhaust pipe 123 is connected to the exhaust port 121. The second exhaust pipe 124 is connected to the exhaust port 122. The first exhaust pipe 123 is provided with a first pressure control valve 125 and a dry pump 126. The second exhaust pipe 124 is provided with a second pressure control valve 127 and a turbo pump 128. During the film forming process in which the inside of the chamber 101 is set to a high pressure, the air is exhausted only by the dry pump 126. The dry pump 126 and the turbo pump 128 are used in combination during the plasma treatment in which the inside of the chamber 101 is set to a low pressure. The pressure control in the chamber 101 is performed by controlling the opening degree of the first pressure control valve 125 and the second pressure control valve 127 based on the detection value of the pressure sensor (not shown) provided in the chamber 101. ..
　チャンバー１０１の側壁には、チャンバー１０１が接続される図示しない真空搬送室との間でウエハＷの搬入出を行うための搬入出口１３０と、この搬入出口１３０を開閉するゲートバルブＧとが設けられている。ウエハＷの搬送は、真空搬送室に設けられた搬送機構（図示せず）により行われる。 On the side wall of the chamber 101, an carry-in outlet 130 for carrying in and out the wafer W to and from a vacuum transfer chamber (not shown) to which the chamber 101 is connected, and a gate valve G for opening and closing the carry-in outlet 130 are provided. ing. The wafer W is conveyed by a transfer mechanism (not shown) provided in the vacuum transfer chamber.
　成膜装置１００は、制御部１４０を有している。制御部１４０は、主制御部と、入力装置（キーボード、マウス等）と、出力装置（プリンタ等）と、表示装置（ディスプレイ等）と、記憶装置（記憶媒体）とを有している。主制御部は、ＣＰＵ（コンピュータ）を有し、成膜装置１００の各構成部を制御する。例えば、主制御部は、ガス供給機構１１０のバルブやマスフローコントローラ、第１の高周波電源１１３、第２の高周波電源１１５、排気機構１２０、温調機構１０４、搬送機構、ゲートバルブＧ等を制御する。制御部１４０の主制御部は、例えば、記憶装置に内蔵された記憶媒体、または記憶装置にセットされた記憶媒体に記憶された処理レシピに基づいて、成膜装置１００に、所定の動作を実行させる。 The film forming apparatus 100 has a control unit 140. The control unit 140 includes a main control unit, an input device (keyboard, mouse, etc.), an output device (printer, etc.), a display device (display, etc.), and a storage device (storage medium). The main control unit has a CPU (computer) and controls each component of the film forming apparatus 100. For example, the main control unit controls a valve of the gas supply mechanism 110, a mass flow controller, a first high frequency power supply 113, a second high frequency power supply 115, an exhaust mechanism 120, a temperature control mechanism 104, a transport mechanism, a gate valve G, and the like. .. The main control unit of the control unit 140 executes a predetermined operation on the film forming apparatus 100 based on, for example, a processing recipe stored in a storage medium built in the storage device or a storage medium set in the storage device. Let me.
　次に、以上のように構成される成膜装置１００の処理動作について説明する。以下の処理動作は制御部１４０における記憶媒体に記憶された処理レシピに基づいて実行される。 Next, the processing operation of the film forming apparatus 100 configured as described above will be described. The following processing operations are executed based on the processing recipe stored in the storage medium in the control unit 140.
　成膜装置１００は、ゲートバルブＧを開ける。搬送機構（図示せず）は、真空搬送室（図示せず）から搬入出口１３０を介して、図２（ａ）のに示す構造が全面に形成された構造体であるウエハＷをチャンバー１０１内に搬入し、サセプタ１０２上に載置する。搬送機構がチャンバー１０１から退避した後、成膜装置１００は、ゲートバルブＧを閉じる。 The film forming apparatus 100 opens the gate valve G. The transfer mechanism (not shown) moves the wafer W, which is a structure in which the structure shown in FIG. 2A is formed on the entire surface, from the vacuum transfer chamber (not shown) through the carry-in outlet 130 into the chamber 101. And place it on the susceptor 102. After the transfer mechanism is retracted from the chamber 101, the film forming apparatus 100 closes the gate valve G.
　成膜装置１００は、排気機構１２０により、チャンバー１０１内の圧力を調整する。また、成膜装置１００は、サセプタ１０２の温調機構１０４によりウエハＷの温度を調整する。そして、成膜装置１００は、ガス供給機構１１０からＴｉＣｌ４ガス、Ｏ２ガス、Ａｒガスをシャワーヘッド１０５を介してチャンバー１０１内に供給しつつ、第１の高周波電源１１３から電力を供給してプラズマ生成してＴｉＯ２膜を成膜する。このとき、第１の高周波電源１１３をオンにしている間、イオン引き込みのために第２の高周波電源１１５をオンにしてもよい。 The film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Then, the film forming apparatus 100 supplies power from the first high-frequency power source 113 while supplying TiCl 4 gas, O 2 gas, and Ar gas from the gas supply mechanism 110 into the chamber 101 via the shower head 105. Plasma is generated to form a TiO 2 film. At this time, while the first high frequency power supply 113 is on, the second high frequency power supply 115 may be turned on for ion attraction.
　ＴｉＯ２膜の成膜後、成膜装置１００は、排気機構１２０によりチャンバー１０１内を排気する。 After the TiO 2 film is formed, the film forming apparatus 100 exhausts the inside of the chamber 101 by the exhaust mechanism 120.
　排気終了後、成膜装置１００は、排気機構１２０により、チャンバー１０１内の圧力を調整する。また、成膜装置１００は、サセプタ１０２の温調機構１０４によりウエハＷの温度を調整する。そして、成膜装置１００は、ガス供給機構１１０からＴｉＣｌ４ガス、Ｏ２ガス、Ａｒガスをシャワーヘッド１０５を介してチャンバー１０１内に供給しつつ、第１の高周波電源１１３から電力を供給してプラズマ生成してＴｉＯ２膜の上面にカーボン膜を成膜する。 After the exhaust is completed, the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Then, the film forming apparatus 100 supplies power from the first high-frequency power source 113 while supplying TiCl 4 gas, O 2 gas, and Ar gas from the gas supply mechanism 110 into the chamber 101 via the shower head 105. Plasma is generated to form a carbon film on the upper surface of the TiO 2 film.
　カーボン膜の成膜後、成膜装置１００は、排気機構１２０によりチャンバー１０１内を排気する。 After the carbon film is formed, the film forming apparatus 100 exhausts the inside of the chamber 101 by the exhaust mechanism 120.
　排気終了後、成膜装置１００は、排気機構１２０により、チャンバー１０１内の圧力を調整する。また、成膜装置１００は、サセプタ１０２の温調機構１０４によりウエハＷの温度を調整する。そして、また、成膜装置１００は、ガス供給機構１１０からＣｌＦ３ガスをシャワーヘッド１０５を介してチャンバー１０１内に供給しつつ、カーボン膜をマスクとしてＴｉＯ２膜をエッチングする。 After the exhaust is completed, the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Further, the film forming apparatus 100 etches the TiO 2 film using the carbon film as a mask while supplying ClF 3 gas from the gas supply mechanism 110 into the chamber 101 via the shower head 105.
　ＴｉＯ２膜のエッチング終了後、成膜装置１００は、排気機構１２０によりチャンバー１０１内を排気する。 After the etching of the TiO 2 film is completed, the film forming apparatus 100 exhausts the inside of the chamber 101 by the exhaust mechanism 120.
　排気終了後、成膜装置１００は、排気機構１２０により、チャンバー１０１内の圧力を調整する。また、成膜装置１００は、サセプタ１０２の温調機構１０４によりウエハＷの温度を調整する。そして、また、成膜装置１００は、ガス供給機構１１０からＨ２ガスをシャワーヘッド１０５を介してチャンバー１０１内に供給しつつ、第１の高周波電源１１３から電力を供給してプラズマ生成してカーボン膜をエッチングする。 After the exhaust is completed, the film forming apparatus 100 adjusts the pressure in the chamber 101 by the exhaust mechanism 120. Further, the film forming apparatus 100 adjusts the temperature of the wafer W by the temperature control mechanism 104 of the susceptor 102. Then, also, the film forming apparatus 100, while supplying into the chamber 101 and H 2 gas from the gas supply mechanism 110 through the showerhead 105, and the plasma generated by supplying electric power from the first RF power source 113 Carbon Etch the film.
　これにより、実施形態に係る成膜装置１００は、ウエハＷに対して、パターンＰの形状を引き継いでパターンＰの上部に成膜できる。 As a result, the film forming apparatus 100 according to the embodiment can take over the shape of the pattern P on the wafer W and form a film on the upper part of the pattern P.
　＜成膜システム＞
　次に、上記成膜装置１００を備えた成膜システムについて説明する。 <Film formation system>
Next, a film forming system including the film forming apparatus 100 will be described.
　図４は、実施形態に係る成膜システムの一例を概略的に示す図である。成膜システム３００は、第１成膜装置１００ａと、第２成膜装置１００ｂと、第１エッチング装置１００ｃと、第２エッチング装置１００ｄとを有する。第１成膜装置１００ａ、第２成膜装置１００ｂ、第１エッチング装置１００ｃおよび第２エッチング装置１００ｄは、平面形状が七角形をなす真空搬送室３０１の４つの壁部にそれぞれゲートバルブＧを介して接続されている。真空搬送室３０１内は、真空ポンプにより排気されて所定の真空度に保持される。 FIG. 4 is a diagram schematically showing an example of a film forming system according to the embodiment. The film forming system 300 includes a first film forming apparatus 100a, a second film forming apparatus 100b, a first etching apparatus 100c, and a second etching apparatus 100d. The first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, and the second etching apparatus 100d are connected to the four walls of the vacuum transfer chamber 301 having a heptagonal planar shape, respectively, via a gate valve G. Is connected. The inside of the vacuum transfer chamber 301 is exhausted by a vacuum pump and maintained at a predetermined degree of vacuum.
　第１成膜装置１００ａ、第２成膜装置１００ｂ、第１エッチング装置１００ｃおよび第２エッチング装置１００ｄは、上述した成膜装置１００と同様に構成されている。第１成膜装置１００ａは、ウエハＷに第１の膜１１、例えば、ＴｉＯ２膜を成膜する装置である。第２成膜装置１００ｂは、ウエハＷに第２の膜１２、例えば、カーボン膜を成膜する装置である。第１エッチング装置１００ｃは、ウエハＷに対してカーボン膜をマスクとしてＴｉＯ２膜のエッチングを実施する装置である。第２エッチング装置１００ｄは、ウエハＷに対してカーボン膜のエッチングを実施する装置である。 The first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, and the second etching apparatus 100d are configured in the same manner as the above-mentioned film forming apparatus 100. The first film forming apparatus 100a is an apparatus for forming a first film 11, for example, a TiO 2 film on the wafer W. The second film forming apparatus 100b is an apparatus for forming a second film 12, for example, a carbon film on the wafer W. The first etching apparatus 100c is an apparatus for etching the TiO 2 film on the wafer W using the carbon film as a mask. The second etching apparatus 100d is an apparatus for etching the carbon film on the wafer W.
　真空搬送室３０１の他の３つの壁部には３つのロードロック室３０２がゲートバルブＧ１を介して接続されている。ロードロック室３０２を挟んで真空搬送室３０１の反対側には大気搬送室３０３が設けられている。３つのロードロック室３０２は、ゲートバルブＧ２を介して大気搬送室３０３に接続されている。ロードロック室３０２は、大気搬送室３０３と真空搬送室３０１との間でウエハＷを搬送する際に、大気圧と真空との間で圧力制御するものである。 Three load lock chambers 302 are connected to the other three walls of the vacuum transfer chamber 301 via a gate valve G1. An air transport chamber 303 is provided on the opposite side of the vacuum transport chamber 301 with the load lock chamber 302 in between. The three load lock chambers 302 are connected to the air transport chamber 303 via a gate valve G2. The load lock chamber 302 controls the pressure between the atmospheric pressure and the vacuum when the wafer W is transported between the atmospheric transport chamber 303 and the vacuum transport chamber 301.
　大気搬送室３０３のロードロック室３０２取り付け壁部とは反対側の壁部にはウエハＷを収容するキャリア（ＦＯＵＰ等）Ｃを取り付ける３つのキャリア取り付けポート３０５を有している。また、大気搬送室３０３の側壁には、ウエハＷのアライメントを行うアライメントチャンバ３０４が設けられている。大気搬送室３０３内には清浄空気のダウンフローが形成されるようになっている。 The wall portion of the air transport chamber 303 opposite to the load lock chamber 302 mounting wall portion has three carrier mounting ports 305 for mounting a carrier (FOUP, etc.) C for accommodating the wafer W. Further, an alignment chamber 304 for aligning the wafer W is provided on the side wall of the air transfer chamber 303. A downflow of clean air is formed in the air transport chamber 303.
　真空搬送室３０１内には、搬送機構３０６が設けられている。搬送機構３０６は、第１成膜装置１００ａ、第２成膜装置１００ｂ、第１エッチング装置１００ｃ、第２エッチング装置１００ｄ、ロードロック室３０２に対してウエハＷを搬送する。搬送機構３０６は、独立に移動可能な２つの搬送アーム３０７ａ、３０７ｂを有している。 A transfer mechanism 306 is provided in the vacuum transfer chamber 301. The transfer mechanism 306 transfers the wafer W to the first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, the second etching apparatus 100d, and the load lock chamber 302. The transport mechanism 306 has two transport arms 307a and 307b that can move independently.
　大気搬送室３０３内には、搬送機構３０８が設けられている。搬送機構３０８は、キャリアＣ、ロードロック室３０２、アライメントチャンバ３０４に対してウエハＷを搬送するようになっている。 A transport mechanism 308 is provided in the atmospheric transport chamber 303. The transfer mechanism 308 transfers the wafer W to the carrier C, the load lock chamber 302, and the alignment chamber 304.
　成膜システム３００は、全体制御部３１０を有している。全体制御部３１０は、主制御部と、入力装置（キーボード、マウス等）、出力装置（プリンタ等）、表示装置（ディスプレイ等）、記憶装置（記憶媒体）を有する。主制御部は、ＣＰＵ（コンピュータ）を有し、第１成膜装置１００ａと、第２成膜装置１００ｂと、第１エッチング装置１００ｃと、第２エッチング装置１００ｄの各構成部を制御する。また、主制御部は、真空搬送室３０１の排気機構や搬送機構３０６、ロードロック室３０２の排気機構やガス供給機構、大気搬送室３０３の搬送機構３０８の搬送機構３０８、ゲートバルブＧ、Ｇ１、Ｇ２の駆動系等を制御する。全体制御部３１０の主制御部は、例えば、記憶装置に内蔵された記憶媒体、または記憶装置にセットされた記憶媒体に記憶された処理レシピに基づいて、成膜システム３００に、所定の動作を実行させる。なお、全体制御部３１０は、上記制御部１４０のような各ユニットの制御部の上位の制御部であってもよい。 The film forming system 300 has an overall control unit 310. The overall control unit 310 includes a main control unit, an input device (keyboard, mouse, etc.), an output device (printer, etc.), a display device (display, etc.), and a storage device (storage medium). The main control unit has a CPU (computer) and controls each component of the first film forming apparatus 100a, the second film forming apparatus 100b, the first etching apparatus 100c, and the second etching apparatus 100d. Further, the main control unit includes an exhaust mechanism and a transport mechanism 306 of the vacuum transport chamber 301, an exhaust mechanism and a gas supply mechanism of the load lock chamber 302, a transport mechanism 308 of the transport mechanism 308 of the atmospheric transport chamber 303, and gate valves G and G1. It controls the drive system of G2 and the like. The main control unit of the overall control unit 310 performs a predetermined operation on the film forming system 300 based on, for example, a storage medium built in the storage device or a processing recipe stored in the storage medium set in the storage device. Let it run. The overall control unit 310 may be a higher-level control unit of the control unit of each unit such as the control unit 140.
　次に、以上のように構成される成膜システム３００の動作について説明する。以下の処理動作は全体制御部３１０における記憶媒体に記憶された処理レシピに基づいて実行される。 Next, the operation of the film forming system 300 configured as described above will be described. The following processing operations are executed based on the processing recipe stored in the storage medium in the overall control unit 310.
　まず、成膜システム３００は、搬送機構３０８により大気搬送室３０３に接続されたキャリアＣからウエハＷを取り出す。成膜システム３００は、いずれかのロードロック室３０２のゲートバルブＧ２を開け、搬送機構３０８によりウエハＷをロードロック室３０２内に搬入する。成膜システム３００は、搬送機構３０８をロードロック室３０２から退避させ、ゲートバルブＧ２を閉じ、ロードロック室３０２内を真空排気する。 First, the film forming system 300 takes out the wafer W from the carrier C connected to the atmospheric transport chamber 303 by the transport mechanism 308. The film forming system 300 opens the gate valve G2 of one of the load lock chambers 302, and carries the wafer W into the load lock chamber 302 by the transfer mechanism 308. The film forming system 300 retracts the transport mechanism 308 from the load lock chamber 302, closes the gate valve G2, and evacuates the inside of the load lock chamber 302.
　成膜システム３００は、ウエハＷを搬入したロードロック室３０２が所定の真空度になった時点でゲートバルブＧ１を開けて、搬送機構３０６の搬送アーム３０７ａ、３０７ｂのいずれかによりロードロック室３０２からウエハＷを取り出す。 In the film forming system 300, the gate valve G1 is opened when the load lock chamber 302 carrying the wafer W reaches a predetermined degree of vacuum, and the transfer arm 307a or 307b of the transfer mechanism 306 is used to move the wafer W from the load lock chamber 302. Take out the wafer W.
　成膜システム３００は、第１成膜装置１００ａのゲートバルブＧを開けて、搬送機構３０６のいずれかの搬送アームが保持するウエハＷを第１成膜装置１００ａに搬入する。成膜システム３００は、空の搬送アームを真空搬送室３０１に戻し、第１成膜装置１００ａのゲートバルブＧを閉じる。第１成膜装置１００ａは、ウエハＷに対してパターンＰの上部で厚く成膜されるように第１の膜１１を成膜する。 The film forming system 300 opens the gate valve G of the first film forming apparatus 100a and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the first film forming apparatus 100a. The film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the first film forming apparatus 100a. The first film forming apparatus 100a forms the first film 11 so as to form a thick film on the upper part of the pattern P with respect to the wafer W.
　第１の膜１１の成膜終了後、成膜システム３００は、第１成膜装置１００ａのゲートバルブＧを開け、搬送機構３０６の搬送アーム３０７ａ、３０７ｂのいずれかにより、第１成膜装置１００ａの中からウエハＷを搬出する。成膜システム３００は、第２成膜装置１００ｂのゲートバルブＧを開けて、搬送機構３０６のいずれかの搬送アームが保持するウエハＷを第２成膜装置１００ｂに搬入する。成膜システム３００は、空の搬送アームを真空搬送室３０１に戻し、第２成膜装置１００ｂのゲートバルブＧを閉じる。第２成膜装置１００ｂは、ウエハＷの第１の膜１１の上面に第２の膜１２を成膜する。 After the film formation of the first film 11 is completed, the film forming system 300 opens the gate valve G of the first film forming apparatus 100a, and the first film forming apparatus 100a is provided by either the conveying arm 307a or 307b of the conveying mechanism 306. The wafer W is carried out from the inside. The film forming system 300 opens the gate valve G of the second film forming apparatus 100b and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the second film forming apparatus 100b. The film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the second film forming apparatus 100b. The second film forming apparatus 100b forms a second film 12 on the upper surface of the first film 11 of the wafer W.
　第２の膜１２の成膜終了後、成膜システム３００は、第２成膜装置１００ｂのゲートバルブＧを開け、搬送機構３０６の搬送アーム３０７ａ、３０７ｂのいずれかにより、第２成膜装置１００ｂの中からウエハＷを搬出する。成膜システム３００は、第１エッチング装置１００ｃのゲートバルブＧを開けて、搬送機構３０６のいずれかの搬送アームが保持するウエハＷを第１エッチング装置１００ｃに搬入する。成膜システム３００は、空の搬送アームを真空搬送室３０１に戻し、第１エッチング装置１００ｃのゲートバルブＧを閉じる。第１エッチング装置１００ｃは、ウエハＷに対して第２の膜１２をマスクとして第１の膜１１のエッチングを実施する。 After the film formation of the second film 12 is completed, the film forming system 300 opens the gate valve G of the second film forming apparatus 100b, and the second film forming apparatus 100b is used by either the conveying arm 307a or 307b of the conveying mechanism 306. The wafer W is carried out from the inside. The film forming system 300 opens the gate valve G of the first etching apparatus 100c and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the first etching apparatus 100c. The film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the first etching apparatus 100c. The first etching apparatus 100c etches the first film 11 on the wafer W using the second film 12 as a mask.
　第１の膜１１のエッチング終了後、成膜システム３００は、第１エッチング装置１００ｃのゲートバルブＧを開け、搬送機構３０６の搬送アーム３０７ａ、３０７ｂのいずれかにより、第１エッチング装置１００ｃの中からウエハＷを搬出する。成膜システム３００は、第２エッチング装置１００ｄのゲートバルブＧを開けて、搬送機構３０６のいずれかの搬送アームが保持するウエハＷを第２エッチング装置１００ｄに搬入する。成膜システム３００は、空の搬送アームを真空搬送室３０１に戻し、第２エッチング装置１００ｄのゲートバルブＧを閉じる。第２エッチング装置１００ｄは、ウエハＷに対して第２の膜１２のエッチングを実施する。 After the etching of the first film 11 is completed, the film forming system 300 opens the gate valve G of the first etching device 100c, and the transfer arm 307a or 307b of the transfer mechanism 306 is used to remove the gate valve G from the first etching device 100c. The wafer W is carried out. The film forming system 300 opens the gate valve G of the second etching apparatus 100d and carries the wafer W held by any of the conveying arms of the conveying mechanism 306 into the second etching apparatus 100d. The film forming system 300 returns the empty transfer arm to the vacuum transfer chamber 301, and closes the gate valve G of the second etching apparatus 100d. The second etching apparatus 100d etches the second film 12 on the wafer W.
　第２の膜１２のエッチング終了後、成膜システム３００は、第２エッチング装置１００ｄのゲートバルブＧを開け、搬送機構３０６の搬送アーム３０７ａ、３０７ｂのいずれかにより、第２エッチング装置１００ｄの中からウエハＷを搬出する。成膜システム３００は、いずれかのロードロック室３０２のゲートバルブＧ１を開け、搬送アーム上のウエハＷをロードロック室３０２内に搬入する。成膜システム３００は、ウエハＷを搬入したロードロック室３０２内を大気に戻し、ゲートバルブＧ２を開けて、搬送機構３０８にてロードロック室３０２内のウエハＷをキャリアＣに戻す。 After the etching of the second film 12 is completed, the film forming system 300 opens the gate valve G of the second etching device 100d, and the transfer arm 307a or 307b of the transfer mechanism 306 is used to remove the second etching device 100d from the inside of the second etching device 100d. The wafer W is carried out. The film forming system 300 opens the gate valve G1 of any of the load lock chambers 302, and carries the wafer W on the transfer arm into the load lock chamber 302. The film forming system 300 returns the inside of the load lock chamber 302 carrying the wafer W to the atmosphere, opens the gate valve G2, and returns the wafer W in the load lock chamber 302 to the carrier C by the transport mechanism 308.
　成膜システム３００は、以上のような処理を、複数のウエハＷについて同時並行的に行って、所定枚数のウエハＷに成膜を実施する。 The film forming system 300 performs the above processing on a plurality of wafers W in parallel to form a film on a predetermined number of wafers W.
　以上のように、本実施形態に係る成膜方法は、パターンＰが形成されたウエハＷにパターンの上部で厚く成膜されるように第１の膜１１を成膜する。成膜方法は、第１の膜１１の上面に第２の膜１２を成膜する。成膜方法は、第２の膜１２よりも第１の膜１１の選択比が高いエッチングを実施する。第２の膜１２をエッチングする。これにより、本実施形態に係る成膜方法は、パターンＰの形状を引き継いでパターンＰの上部に第１の膜を成膜できる。 As described above, in the film forming method according to the present embodiment, the first film 11 is formed on the wafer W on which the pattern P is formed so as to form a thick film on the upper part of the pattern. The film forming method is to form a second film 12 on the upper surface of the first film 11. In the film forming method, etching is performed in which the selection ratio of the first film 11 is higher than that of the second film 12. The second film 12 is etched. As a result, the film forming method according to the present embodiment can take over the shape of the pattern P and form a first film on the upper part of the pattern P.
　また、本実施形態に係る成膜方法は、プラズマＣＶＤにより、パターンＰの上部に、第１の膜１１として、ＴｉＯ２膜を成膜する。成膜方法は、ＴｉＯ２膜の上面に、第２の膜１２として、カーボン系保護膜を成膜する。成膜方法は、カーボン系保護膜よりもＴｉＯ２膜の選択比が高いエッチングを実施する。これにより、本実施形態に係る成膜方法は、パターンＰの形状を引き継いでパターンＰの上部にＴｉＯ２膜を成膜できる。 Further, in the film forming method according to the present embodiment, a TiO 2 film is formed as the first film 11 on the upper part of the pattern P by plasma CVD. As a film forming method, a carbon-based protective film is formed as a second film 12 on the upper surface of the TiO 2 film. As a film forming method, etching is performed in which the selection ratio of the TiO 2 film is higher than that of the carbon-based protective film. As a result, the film forming method according to the present embodiment can take over the shape of the pattern P and form a TiO 2 film on the upper part of the pattern P.
　また、本実施形態に係る成膜方法は、Ｃ３Ｈ６ガス、Ａｒガスを供給しつつプラズマを生成して第１の膜１１の上面に、第２の膜１２として、カーボン膜を成膜する。これにより、本実施形態に係る成膜方法は、カーボン膜により第１の膜１１の上面を保護でき、第１の膜１１を側面側から高い選択比でエッチングさせることができる。 Further, the film forming method according to the present embodiment, C 3 H 6 gas, the upper surface of the first film 11 to generate plasma while supplying Ar gas, as a second layer 12, forming a carbon film To do. Thereby, in the film forming method according to the present embodiment, the upper surface of the first film 11 can be protected by the carbon film, and the first film 11 can be etched from the side surface side with a high selective ratio.
　以上、実施形態について説明してきたが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は、多様な形態で具現され得る。また、上記の実施形態は、請求の範囲およびその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 Although the embodiments have been described above, the embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. Moreover, the above-described embodiment may be omitted, replaced, or changed in various forms without departing from the scope of claims and the gist thereof.
　例えば、上記実施形態では、３次元トランジスタを形成する場合を例に説明したが、これに限定されるものはない。実施形態に係る成膜方法は、パターンの形状を引き継いでパターンの上部に成膜したい場合に全般に適用できる。 For example, in the above embodiment, the case of forming a three-dimensional transistor has been described as an example, but the present invention is not limited to this. The film forming method according to the embodiment can be generally applied when it is desired to take over the shape of the pattern and form a film on the upper part of the pattern.
　また、上記実施形態では、第１の膜１１として、パターンＰと同種の膜を成膜する場合を例に説明したが、これに限定されるものはない。第１の膜１１は、パターンＰと異なる種類の膜であってもよい。この場合、第１の膜１１のエッチングとしては、第２の膜１２およびパターンＰよりも第１の膜１１の選択比が高いエッチングを実施する。 Further, in the above embodiment, the case where a film of the same type as the pattern P is formed as the first film 11 has been described as an example, but the present invention is not limited to this. The first film 11 may be a different type of film from the pattern P. In this case, as the etching of the first film 11, the etching in which the selection ratio of the first film 11 is higher than that of the second film 12 and the pattern P is performed.
　さらに、上記の成膜システム３００では、第１の膜１１の成膜と第２の膜１２の成膜を第１成膜装置１００ａと第２成膜装置１００ｂで別に実施する場合を例に説明したが、これに限定されるものはない。第１の膜１１の成膜と第２の膜１２の成膜は、同じ成膜装置で実施してもよい。例えば、成膜システム３００は、１台の成膜装置を有し、当該成膜装置で第１の膜１１の成膜と第２の膜１２の成膜を実施してもよい。また、成膜システム３００では、第１の膜１１のエッチングと第２の膜１２のエッチングを第１エッチング装置１００ｃと第２エッチング装置１００ｄでそれぞれ別に実施する場合を例に説明したが、これに限定されるものはない。第１の膜１１のエッチングと第２の膜１２のエッチングは、同じエッチング装置で実施してもよい。例えば、成膜システム３００は、１台のエッチング装置を有し、当該エッチング装置で第１の膜１１のエッチングと第２の膜１２のエッチングを実施してもよい。 Further, in the above-mentioned film forming system 300, a case where the first film 11 and the second film 12 are separately formed by the first film forming apparatus 100a and the second film forming apparatus 100b will be described as an example. However, there is nothing limited to this. The film formation of the first film 11 and the film formation of the second film 12 may be carried out by the same film forming apparatus. For example, the film forming system 300 may have one film forming apparatus, and the film forming apparatus may be used to form the first film 11 and the second film 12. Further, in the film forming system 300, a case where the etching of the first film 11 and the etching of the second film 12 are separately performed by the first etching apparatus 100c and the second etching apparatus 100d has been described as an example. There is nothing limited. The etching of the first film 11 and the etching of the second film 12 may be performed by the same etching apparatus. For example, the film forming system 300 may have one etching apparatus, and the etching apparatus may perform etching of the first film 11 and etching of the second film 12.
　さらに、上記実施形態では基板としてシリコンウエハを用いた場合について示したが、これに限定されるものはない。基板は、化合物半導体、ガラス基板、セラミックス基板等、どのような基板であってもよい。 Further, in the above embodiment, the case where a silicon wafer is used as a substrate is shown, but the present invention is not limited to this. The substrate may be any substrate such as a compound semiconductor, a glass substrate, and a ceramics substrate.
　１０　シリコン基体
　１１　第１の膜
　１２　第２の膜
　１００　成膜装置
　１００ａ　第１成膜装置
　１００ｂ　第２成膜装置
　１００ｃ　第１エッチング装置
　１００ｄ　第２エッチング装置
　１０１　チャンバー
　１０２　サセプタ
　１０６　シャワープレート
　１１０　ガス供給機構
　１１３　第１の高周波電源
　１１５　第２の高周波電源
　１２０　排気機構
　１４０　制御部
　３００　成膜システム
　Ｐ　パターン
　Ｗ　ウエハ 10 Silicon substrate 11 1st film 12 2nd film 100 film forming apparatus 100a 1st film forming apparatus 100b 2nd film forming apparatus 100c 1st etching apparatus 100d 2nd etching apparatus 101 chamber 102 susceptor 106 shower plate 110 gas supply mechanism 113 First high-frequency power supply 115 Second high-frequency power supply 120 Exhaust mechanism 140 Control unit 300 Film formation system P pattern W wafer

Claims (7)

  1. 　パターンが形成された基板に前記パターンの上部で厚く成膜されるように第１の膜を成膜する第１成膜工程と、
    　前記第１の膜の上面に第２の膜を成膜する第２成膜工程と、
    　前記第２の膜よりも前記第１の膜の選択比が高いエッチングを実施する第１エッチング工程と、
    　前記第２の膜をエッチングする第２エッチング工程と、
    　を有する成膜方法。     A first film forming step of forming a first film on a substrate on which a pattern is formed so that a thick film is formed on the upper part of the pattern, and
    A second film forming step of forming a second film on the upper surface of the first film, and
    A first etching step of performing etching in which the selectivity of the first film is higher than that of the second film, and
    A second etching step of etching the second film and
    A film forming method having.
  2. 　前記第１成膜工程は、前記パターンの上部に、前記第１の膜として、金属酸化膜を成膜し、
    　前記第２成膜工程は、前記金属酸化膜の上面に、前記第２の膜として、カーボン系保護膜を成膜し、
    　前記第１エッチング工程は、前記カーボン系保護膜よりも前記金属酸化膜の選択比が高いエッチングを実施する
    　請求項１に記載の成膜方法。     In the first film forming step, a metal oxide film is formed on the upper part of the pattern as the first film.
    In the second film forming step, a carbon-based protective film is formed on the upper surface of the metal oxide film as the second film.
    The film forming method according to claim 1, wherein the first etching step performs etching in which the selective ratio of the metal oxide film is higher than that of the carbon-based protective film.
  3. 　前記第１成膜工程は、プラズマＣＶＤ（chemical　vapor　deposition）により、前記パターンの上部に、前記第１の膜として、ＴｉＯ２膜を成膜し、
    　前記第２成膜工程は、前記ＴｉＯ２膜の上面に、前記第２の膜として、カーボン膜を成膜し、
    　前記第１エッチング工程は、前記カーボン膜よりも前記ＴｉＯ２膜の選択比が高いエッチングを実施する
    　請求項１または２に記載の成膜方法。     In the first film forming step, a TiO 2 film is formed as the first film on the upper part of the pattern by plasma CVD (chemical vapor deposition).
    In the second film forming step, a carbon film is formed on the upper surface of the TiO 2 film as the second film.
    The film forming method according to claim 1 or 2, wherein the first etching step performs etching in which the selection ratio of the TiO 2 film is higher than that of the carbon film.
  4. 　前記第１エッチング工程は、プラズマを用いない熱的なエッチングあるいは水溶液を用いたウェットエッチングであることを特徴とする
    　請求項１～３の何れか１つに記載の成膜方法。     The film forming method according to any one of claims 1 to 3, wherein the first etching step is thermal etching using no plasma or wet etching using an aqueous solution.
  5. 　前記第２成膜工程は、Ｃ３Ｈ６ガス、Ａｒガスを供給しつつプラズマを生成して前記第１の膜の上面に、前記第２の膜として、カーボン膜を成膜する
    　請求項３に記載の成膜方法。     The second film-forming step, C 3 H 6 gas, the upper surface of said generating plasma while supplying Ar gas first film, as the second layer, claim to deposit the carbon film 3 The film forming method described in 1.
  6. 　パターンが形成された基板を収容する処理容器と、
    　前記処理容器内に所定の処理ガスを供給するガス供給機構と、
    　前記処理容器内を排気する排気機構と、
    　前記処理容器内にプラズマを生成するプラズマ生成機構と、
    　前記ガス供給機構、前記排気機構、および前記プラズマ生成機構を制御する制御部とを有し、
    　前記制御部は、請求項１～５のいずれか１つに記載の成膜方法が行われるように前記ガス供給機構、前記排気機構、および前記プラズマ生成機構を制御する
    　成膜装置。     A processing container for accommodating the patterned substrate and
    A gas supply mechanism that supplies a predetermined processing gas into the processing container,
    An exhaust mechanism that exhausts the inside of the processing container and
    A plasma generation mechanism that generates plasma in the processing container,
    It has a gas supply mechanism, an exhaust mechanism, and a control unit that controls the plasma generation mechanism.
    The control unit is a film forming apparatus that controls the gas supply mechanism, the exhaust mechanism, and the plasma generation mechanism so that the film forming method according to any one of claims 1 to 5 is performed.
  7. 　パターンが形成された基板に前記パターンの上部で厚く成膜されるように第１の膜を成膜し、前記第１の膜の上面に第２の膜を成膜する成膜装置と、
    　前記第２の膜よりも前記第１の膜の選択比が高いエッチングを実施し、前記第２の膜をエッチングするエッチング装置と、
    　を有する成膜システム。     A film forming apparatus for forming a first film on a substrate on which a pattern is formed so as to form a thick film on the upper part of the pattern, and forming a second film on the upper surface of the first film.
    An etching apparatus that performs etching with a higher selectivity of the first film than the second film and etches the second film.
    Film formation system with.
PCT/JP2020/032287 2019-09-10 2020-08-27 Film forming method, film forming device, and film forming system WO2021049306A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224313A (en) * 1985-03-29 1986-10-06 Hitachi Ltd Vapor-phase thin film growth method
JPH02166737A (en) * 1988-12-21 1990-06-27 Matsushita Electric Ind Co Ltd Method of forming interlayer insulating film
JPH04221826A (en) * 1990-12-21 1992-08-12 Sharp Corp Manufacture of semiconductor device
JP2008171906A (en) * 2007-01-10 2008-07-24 Sony Corp Method of manufacturing semiconductor deice and method of manufacturing transistor
JP2009158762A (en) * 2007-12-27 2009-07-16 Fujitsu Microelectronics Ltd Manufacturing method of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61224313A (en) * 1985-03-29 1986-10-06 Hitachi Ltd Vapor-phase thin film growth method
JPH02166737A (en) * 1988-12-21 1990-06-27 Matsushita Electric Ind Co Ltd Method of forming interlayer insulating film
JPH04221826A (en) * 1990-12-21 1992-08-12 Sharp Corp Manufacture of semiconductor device
JP2008171906A (en) * 2007-01-10 2008-07-24 Sony Corp Method of manufacturing semiconductor deice and method of manufacturing transistor
JP2009158762A (en) * 2007-12-27 2009-07-16 Fujitsu Microelectronics Ltd Manufacturing method of semiconductor device

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