CN103972080A - ONO structure and manufacturing method for ONO capacitor - Google Patents
ONO structure and manufacturing method for ONO capacitor Download PDFInfo
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- CN103972080A CN103972080A CN201410217609.4A CN201410217609A CN103972080A CN 103972080 A CN103972080 A CN 103972080A CN 201410217609 A CN201410217609 A CN 201410217609A CN 103972080 A CN103972080 A CN 103972080A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
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Abstract
The invention discloses a manufacturing method for an ONO structure. The manufacturing method includes the steps that a first silicon oxide layer is grown on the surface of a wafer through a plasma enhanced atomic layer deposition process; a silicon nitride layer is grown on a first oxidation layer through the plasma enhanced atomic layer deposition process; a second silicon dioxide layer is grown on a nitridation layer through the plasma enhanced atomic layer deposition process. The steps are executed in plasma enhanced atomic layer deposition equipment in situ. The ONO structure with excellent performance can be manufactured in the same process menu and in the same equipment.
Description
Technical field
The present invention relates to ic manufacturing technology field, particularly the manufacture method of a kind of ONO structure and ONO electric capacity.
Background technology
Electric capacity is the basic device of one during integrated circuit is manufactured, because silica has compared with high puncture voltage, silicon nitride has higher dielectric constant, in addition silica has better adhesion for power-on and power-off pole plate, so ONO (silica-silicon-nitride and silicon oxide) structure is widely used as dielectric capacitor.
ONO structure is a kind of laminated construction, and for multi-layer compound film, in prior art, conventional method is the method formation of the silica employing thermal oxidation of top layer and bottom, and the silicon nitride in intermediate layer adopts the method for CVD deposition to form.But thus,, the three-layer thin-film of ONO structure need form in different film growth board (thermal oxidation equipment, CVD depositing device), has reduced make efficiency; And the THICKNESS CONTROL of each layer film is also the difficult point of manufacturing process.In addition, in prior art, also there is the method for one-stop formation three-layer thin-film in same board, as cvd silicon oxide-silicon-nitride and silicon oxide successively in PECVD, but deposit grown film quality, particularly step coverage and uniformity aspect unsatisfactory by PECVD.
Therefore, be necessary to propose a kind of making that can either realize ONO structure in same equipment, and the method for the ONO film quality superior performance forming.
Summary of the invention
Main purpose of the present invention is to overcome the defect of prior art, and a kind of method that can complete the ONO structure fabrication of superior performance in the same process menu of same equipment is provided.
The present invention adopts following technical scheme: a kind of manufacture method of ONO structure, comprises the following steps: step 1, with plasma enhanced atomic layer deposition technique in crystal column surface growth regulation one silica layer; Step 2, with plasma enhanced atomic layer deposition technique grown silicon nitride layer in described the first oxide layer; And step 3, with plasma enhanced atomic layer deposition technique growth regulation silicon dioxide layer on described nitration case, wherein, above-mentioned steps 1, step 2 and step 3 are carried out at plasma enhanced atomic layer deposition equipment situ.
The preferred a kind of technical scheme of the present invention, step 1 comprises: step 11, in the chamber of described plasma atomic layer deposition apparatus, pass into predecessor, this predecessor is adsorbed in the surface of described wafer; Step 12 passes into inert gas purge in described chamber; Step 13, to passing into oxygen in described chamber and ionization is oxidized to form the first thin layer of silicon oxide for oxygen gas plasma to this predecessor; Repeat above-mentioned steps 11～13 until described the first thin layer of silicon oxide reaches predetermined thickness and forms described the first silicon oxide layer.
The preferred a kind of technical scheme of the present invention, step 2 comprises: step 21, in the chamber of described plasma atomic layer deposition apparatus, pass into this predecessor, this predecessor is adsorbed in the surface of described the first silicon oxide layer; Step 22 passes into this inert gas purge in described chamber; Step 23, carries out nitrogenize to form thin layer of sin to this predecessor to passing into nitrogen ionization in described chamber for nitrogen gas plasma; Repeat above-mentioned steps 21～23 until described thin layer of sin reaches predetermined thickness and forms described silicon nitride layer.
The preferred a kind of technical scheme of the present invention, step 3 comprises: step 31, in the chamber of described plasma atomic layer deposition apparatus, pass into this predecessor, this predecessor is adsorbed in the surface of described silicon nitride layer; Step 32 passes into this inert gas purge in described chamber; Step 33, to passing into oxygen in described chamber and ionization is oxidized to form the second thin layer of silicon oxide for oxygen gas plasma to this predecessor; Repeat above-mentioned steps 31～33 until described the second thin layer of silicon oxide reaches predetermined thickness and forms described the second silicon oxide layer.
The preferred a kind of technical scheme of the present invention, the temperature of described plasma atom layer deposition process is 200 DEG C～400 DEG C.
The preferred a kind of technical scheme of the present invention, described predecessor is gaseous ammonia base silane.
The preferred a kind of technical scheme of the present invention, described inert gas is selected from nitrogen, argon gas or helium.。
The present invention also provides a kind of manufacture method of ONO electric capacity, comprises the following steps: substrate is provided, on described substrate, is formed with lower electrode plate; On described lower electrode plate, form middle dielectric layer, described middle dielectric layer is ONO structure; And form electric pole plate on described middle dielectric layer, wherein, described middle dielectric layer forms by the manufacture method of above-mentioned ONO structure.
The preferred a kind of technical scheme of the present invention, the material of described electric pole plate and lower electrode plate is polysilicon or metal.
Compared with prior art, the present invention is by the one-stop growth ONO structure on PEALD equipment, can obtain performance (good uniformity, puncture voltage is high) excellent silica and silicon nitride film, and can accurately control the thickness of two kinds of films, can significantly improve the quality of the product that needs accurate control capacitance performance.
Brief description of the drawings
Fig. 1 is the flow chart of the manufacture method of the ONO structure of one embodiment of the invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
Please refer to 1, its ONO structure that is depicted as the present invention's proposition forms the schematic flow sheet of technique.
ONO structure is in the growth of plasma enhanced atomic layer deposition (PEALD) equipment situ, and its manufacture method comprises the following steps:
Step 1: carry out the growth of the first silicon oxide layer.
In this step, with plasma enhanced atomic layer deposition (PEALD) technique, in crystal column surface growth regulation one silica layer, concrete technology step is as follows:
First, in the processing chamber of PEALD equipment, pass into predecessor.In the present embodiment, predecessor is a kind of gaseous ammonia base silane, as gaseous state 2Nte, and passes into chamber using Ar as carrier gas, and in this process, 2Nte can be adsorbed on crystal column surface.Use carrier gas can but be not limited to as Ar.
Then, in processing chamber, pass into inert gas, as Ar, purge.Pass into chamber with the Ar of large flow and purge, object is to remove the unnecessary 2Nte of crystal column surface, makes the thickness of the 2Nte of crystal column surface meet process requirements, as the thickness of only surplus next molecular layer.The amount of inert gas using in this step can be according to demand, disposes unnecessary predecessor.In the present embodiment, be all Ar as inert gas and the carrier gas of purge gas, in technique, need not introduce other gases, it is less that technique realizes difficulty.In addition, can be with identical as the Ar flow that purges use in flow set as the Ar of carrier gas.
Afterwards, pass into the plasma of oxygen ionization formation oxygen to processing chamber, this oxygen gas plasma is oxidized the remaining 2Nte of crystal column surface, finally obtains the first thin layer of silicon oxide.The thickness of the first thin layer of silicon oxide is about 1A left and right.
Then, repeat above-mentioned steps, on the crystal column surface that forms one deck the first thin layer of silicon oxide, carry out again the absorption of predecessor 2Nte, the purging of inert gas Ar, the step of plasma oxidation, forms the second layer the first thin layer of silicon oxide.Above-mentioned steps is carried out to repeatedly repetitive cycling, and the thickness of controlling the first thin layer of silicon oxide by cycle-index reaches predetermined thickness and forms the first silicon oxide layer.
Step 2, carries out the growth of silicon nitride layer.
In this step, equally with PEALD technique at the first silicon oxide layer superficial growth silicon nitride layer, processing step comprises the step of sweep-nitrogen plasma of 2Nte absorption-Ar air-blowing oxidation, specific as follows:
First, in the processing chamber of PEALD equipment, pass into gaseous state 2Nte predecessor using Ar as carrier gas.In this process, 2Nte can be adsorbed on the surface of the first silicon oxide layer.Use carrier gas can but be not limited to as Ar.
Then, in processing chamber, pass into Ar inert gas, pass into chamber to purge with the Ar of large flow, object is to remove the first unnecessary 2Nte in silicon oxide layer surface, makes the thickness of its surperficial 2Nte meet process requirements, as the thickness of only surplus next molecular layer.The amount of inert gas using in this step can be according to demand, disposes unnecessary predecessor.In the present embodiment, be all Ar as inert gas and the carrier gas of purge gas, in technique, need not introduce other gases, it is less that technique realizes difficulty.In addition, can be with identical as the Ar flow that purges use in flow set as the Ar of carrier gas.
Afterwards, pass into the plasma of nitrogen ionization formation nitrogen to processing chamber, this nitrogen gas plasma is oxidized the 2Nte of the first molecular layers thick in silicon oxide layer surface, finally obtains thin layer of sin.The thickness of thin layer of sin is about 0.2A left and right.
Above-mentioned steps is carried out to repeatedly repetitive cycling, owing to repeating each time above-mentioned steps and can form the thin layer of sin of about 0.2A thickness, by the control of cycle-index just can make the thickness of thin layer of sin reach predetermined thickness form in the middle of silicon nitride layer.
Step 3: carry out the growth of the second silicon oxide layer.
In this step, still superficial growth the second silicon oxide layer at silicon nitride layer with PEALD technique, processing step comprises the step of sweep-oxygen plasma of 2Nte absorption-Ar air-blowing oxidation, specific as follows:
First in the processing chamber of PEALD equipment, pass into gaseous state 2Nte predecessor using Ar as carrier gas.In this process, 2Nte can be adsorbed on the surface of silicon nitride layer.Use carrier gas can but be not limited to as Ar.
Then, in processing chamber, pass into Ar inert gas purge, pass into chamber to purge with the Ar of large flow, object is to remove the unnecessary 2Nte in silicon nitride layer surface, makes its surperficial 2Nte thickness meet process requirements, as the thickness of only surplus next molecular layer.The inert gas using in this step can be according to requirements set, disposes unnecessary predecessor.In the present embodiment, be all Ar as inert gas and the carrier gas of purge gas, in technique, need not introduce other gases, it is less that technique realizes difficulty.In addition, can be with identical as the Ar flow that purges use in flow set as the Ar of carrier gas.
Afterwards, pass into the plasma of oxygen ionization formation oxygen to processing chamber, this oxygen gas plasma is oxidized the 2Nte of the molecular layers thick in silicon nitride layer surface, finally obtains the second thin layer of silicon oxide.The thickness of the second thin layer of silicon oxide is about 1A left and right.
Above-mentioned steps is carried out to repeatedly repetitive cycling, owing to repeating each time above-mentioned steps and can form the second thin layer of silicon oxide of about 1A thickness, just can make the thickness of the second thin layer of silicon oxide reach predetermined thickness by the control of cycle-index and form the second silicon oxide layer.
Owing to just can realizing by a process menu in the same process cavity of being formed on of above-mentioned three kinds of films, improve the growth efficiency of ONO structure.Because PEALD technique is to rely on plasma to drive reaction to carry out, lower to the requirement of temperature.In the present embodiment, the technological temperature of PEALD technique is 200 DEG C～400 DEG C.In addition, with the good quality of PEALD technique institute growing film, there is good uniformity and higher puncture voltage.It should be noted that and in the present embodiment, carry out adsorption using gaseous state 2Nte as predecessor, but predecessor can be also other amino silanes in other embodiments.And the inert gas that carries out predecessor purging is except Ar, can be also He or H
2.
The manufacture method of the ONO structure based on above-mentioned, the invention allows for the manufacture method of ONO electric capacity.Below with reference to specific embodiment, the manufacture method of ONO electric capacity is illustrated.
For example need to form intermediate medium dielectric thickness layer by layer and be required to meet the ONO capacitance structure of following requirement: middle dielectric layer is ONO structure, and wherein the thickness of the first silicon oxide layer is 30A, and middle silicon nitride layer thickness is 100A, and the second silicon oxide layer thickness is 30A.Making step is as follows:
First, provide substrate, on this substrate, form Cu lower electrode plate.
Then, on PEALD equipment, set up a process menu Recipe who meets the demands.This process menu Recipe is divided into three key steps.
First carry out the deposition of the first silicon oxide layer according to the flow process shown in Fig. 1, by the execution " predecessor absorption-inert gas purge-O that repeatedly circulates
2plasma oxidation " step form the first silicon oxide layer.Design parameter setting can be with reference to as follows:
The flow of gaseous ammonia base silane 2Nte is 1mg/min, and its carrier gas is Ar, and carrier gas flux is 5000sccm;
Be Ar as the inert gas of purge gas, flow is 5000sccm, and purge time is 1s;
Carry out the oxygen O of plasma treatment
2flow be 4000sccm, generating the radio-frequency power RF of plasma is 2500W, plasma treatment time 1.5s;
Due to each the first thin layer of silicon oxide of carrying out above-mentioned steps and obtaining 1A thickness, circulation total degree is made as left and right 30 times, will obtain the first silicon oxide layer of 30A.
Then carry out the deposition of silicon nitride layer, form silicon nitride layer by the step of the execution that repeatedly circulates " predecessor absorption-inert gas purge-N2 pecvd nitride ".Design parameter setting can be with reference to as follows:
Gaseous ammonia base silane 2Nte flow: 1mg/min, its carrier gas is Ar, carrier gas flux is 5000sccm;
Be Ar as the inert gas of purge gas, flow is 5000sccm, and purge time is 1s;
The flow that carries out the nitrogen N 2 of plasma treatment is 4000sccm, and the radio-frequency power RF that generates plasma is 2500W, plasma treatment time 1.5s;
Due to each the first thin layer of silicon oxide of carrying out above-mentioned steps and obtaining 0.2A thickness, circulation total degree is 500 left and right, will obtain the silicon nitride layer of 100A.
Finally carry out the deposition of the second silicon oxide layer, the sedimentary facies of its flow process and parameter setting and the first silicon oxide layer is same, and therefore not to repeat here.
After the deposition of three-layer thin-film completes, just form ono dielectric structure.Finally deposit again Cu electric pole plate, just obtained corresponding ONO capacitance structure.In the present embodiment, power-on and power-off pole plate is metal, but in other embodiments, the material of power-on and power-off pole plate can be also polysilicon.
In sum, the present invention is by carrying out the deposition of ONO structure with PEALD technique original position, realize the one-stop growth of ono dielectric structure on PEALD equipment, thereby can obtain performance (good uniformity, puncture voltage is high) excellent silica and silicon nitride film, and can accurately control the thickness of two kinds of films, there is significant advantage for the manufacture of the product of the accurate control capacitance performance of needs.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (9)
1. a manufacture method for ONO structure, is characterized in that, comprises the following steps:
Step 1, with plasma enhanced atomic layer deposition technique in crystal column surface growth regulation one silica layer;
Step 2, with plasma enhanced atomic layer deposition technique grown silicon nitride layer in described the first oxide layer; And
Step 3, with plasma enhanced atomic layer deposition technique growth regulation silicon dioxide layer on described nitration case,
Wherein, above-mentioned steps 1, step 2 and step 3 are carried out at plasma enhanced atomic layer deposition equipment situ.
2. the manufacture method of ONO structure according to claim 1, is characterized in that, step 1 comprises:
Step 11 passes into predecessor in the chamber of described plasma atomic layer deposition apparatus, and this predecessor is adsorbed in the surface of described wafer;
Step 12 passes into inert gas purge in described chamber;
Step 13, to passing into oxygen in described chamber and ionization is oxidized to form the first thin layer of silicon oxide for oxygen gas plasma to this predecessor;
Repeat above-mentioned steps 11～13 until described the first thin layer of silicon oxide reaches predetermined thickness and forms described the first silicon oxide layer.
3. the manufacture method of ONO structure according to claim 2, is characterized in that, step 2 comprises:
Step 21 passes into this predecessor in the chamber of described plasma atomic layer deposition apparatus, and this predecessor is adsorbed in the surface of described the first silicon oxide layer;
Step 22 passes into this inert gas purge in described chamber;
Step 23, carries out nitrogenize to form thin layer of sin to this predecessor to passing into nitrogen ionization in described chamber for nitrogen gas plasma;
Repeat above-mentioned steps 21～23 until described thin layer of sin reaches predetermined thickness and forms described silicon nitride layer.
4. the manufacture method of ONO structure according to claim 3, is characterized in that, step 3 comprises:
Step 31 passes into this predecessor in the chamber of described plasma atomic layer deposition apparatus, and this predecessor is adsorbed in the surface of described silicon nitride layer;
Step 32 passes into this inert gas purge in described chamber;
Step 33, to passing into oxygen in described chamber and ionization is oxidized to form the second thin layer of silicon oxide for oxygen gas plasma to this predecessor;
Repeat above-mentioned steps 31～33 until described the second thin layer of silicon oxide reaches predetermined thickness and forms described the second silicon oxide layer.
5. the manufacture method of ONO structure according to claim 4, is characterized in that, the temperature of described plasma atom layer deposition process is 200 DEG C～400 DEG C.
6. according to the manufacture method of the ONO structure described in claim 1～5 any one, it is characterized in that, described predecessor is gaseous ammonia base silane.
7. according to the manufacture method of the ONO structure described in claim 1～5 any one, it is characterized in that, described inert gas is selected from nitrogen, argon gas or helium.
8. a manufacture method for ONO electric capacity, is characterized in that, comprises the following steps:
Substrate is provided, on described substrate, is formed with lower electrode plate;
On described lower electrode plate, form middle dielectric layer, described middle dielectric layer is ONO structure; And
On described middle dielectric layer, form electric pole plate,
Wherein, described middle dielectric layer forms by the manufacture method described in claim 1～7 any one.
9. the manufacture method of ONO electric capacity according to claim 8, is characterized in that, the material of described electric pole plate and lower electrode plate is polysilicon or metal.
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Cited By (7)
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| CN105097815A (en) * | 2014-05-23 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Capacitor structure and manufacturing method thereof, and semiconductor memory including capacitor structure |
| CN109576677A (en) * | 2018-12-28 | 2019-04-05 | 复旦大学 | A method of utilizing the SiON film of plasma enhanced atomic layer deposition controllable preparation different oxygen |
| CN110456451A (en) * | 2019-08-14 | 2019-11-15 | 中国科学院微电子研究所 | A kind of preparation method of region thick film silicon nitride |
| CN111593329A (en) * | 2019-02-20 | 2020-08-28 | Asm Ip私人控股有限公司 | Cyclical deposition method comprising a processing step and device therefor |
| CN112670167A (en) * | 2020-12-29 | 2021-04-16 | 光华临港工程应用技术研发(上海)有限公司 | Method for preparing superlattice structure of silicon oxide and silicon nitride |
| CN116133367A (en) * | 2021-08-12 | 2023-05-16 | 长鑫存储技术有限公司 | Semiconductor film forming method, semiconductor structure and memory |
| CN116133367B (en) * | 2021-08-12 | 2024-10-22 | 长鑫存储技术有限公司 | Semiconductor film forming method, semiconductor structure and memory |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105097815A (en) * | 2014-05-23 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Capacitor structure and manufacturing method thereof, and semiconductor memory including capacitor structure |
| CN109576677A (en) * | 2018-12-28 | 2019-04-05 | 复旦大学 | A method of utilizing the SiON film of plasma enhanced atomic layer deposition controllable preparation different oxygen |
| CN111593329A (en) * | 2019-02-20 | 2020-08-28 | Asm Ip私人控股有限公司 | Cyclical deposition method comprising a processing step and device therefor |
| CN110456451A (en) * | 2019-08-14 | 2019-11-15 | 中国科学院微电子研究所 | A kind of preparation method of region thick film silicon nitride |
| CN112670167A (en) * | 2020-12-29 | 2021-04-16 | 光华临港工程应用技术研发(上海)有限公司 | Method for preparing superlattice structure of silicon oxide and silicon nitride |
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| CN116133367A (en) * | 2021-08-12 | 2023-05-16 | 长鑫存储技术有限公司 | Semiconductor film forming method, semiconductor structure and memory |
| CN116133367B (en) * | 2021-08-12 | 2024-10-22 | 长鑫存储技术有限公司 | Semiconductor film forming method, semiconductor structure and memory |
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Application publication date: 20140806 |