GB2539102B - Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film - Google Patents

Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film Download PDF

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Publication number
GB2539102B
GB2539102B GB1609565.5A GB201609565A GB2539102B GB 2539102 B GB2539102 B GB 2539102B GB 201609565 A GB201609565 A GB 201609565A GB 2539102 B GB2539102 B GB 2539102B
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United Kingdom
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layer
ferromagnetic layer
magnet
mtj
ferromagnetic
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Expired - Fee Related
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GB1609565.5A
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English (en)
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GB201609565D0 (en
GB2539102A (en
Inventor
A Katine Jordan
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Western Digital Technologies Inc
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Western Digital Technologies Inc
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Publication of GB2539102A publication Critical patent/GB2539102A/en
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
GB1609565.5A 2015-06-02 2016-06-01 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film Expired - Fee Related GB2539102B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/728,788 US9620562B2 (en) 2015-06-02 2015-06-02 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

Publications (3)

Publication Number Publication Date
GB201609565D0 GB201609565D0 (en) 2016-07-13
GB2539102A GB2539102A (en) 2016-12-07
GB2539102B true GB2539102B (en) 2019-09-11

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Family Applications (1)

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GB1609565.5A Expired - Fee Related GB2539102B (en) 2015-06-02 2016-06-01 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

Country Status (8)

Country Link
US (1) US9620562B2 (OSRAM)
JP (1) JP2016225633A (OSRAM)
KR (1) KR101869149B1 (OSRAM)
CN (1) CN106374035B (OSRAM)
DE (1) DE102016006651A1 (OSRAM)
FR (1) FR3037185B1 (OSRAM)
GB (1) GB2539102B (OSRAM)
TW (1) TWI602331B (OSRAM)

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US9978931B2 (en) 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US20170033281A1 (en) * 2015-07-29 2017-02-02 Inston Inc. Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components
US10102893B2 (en) 2016-06-28 2018-10-16 Inston Inc. Systems for implementing word line pulse techniques in magnetoelectric junctions
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
WO2019006037A1 (en) 2017-06-27 2019-01-03 Inston, Inc. REDUCTION OF WRITE ERROR RATE IN MAGNETOELECTRIC RAM
JP2019057601A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 磁気記憶装置
US10593866B2 (en) * 2018-06-27 2020-03-17 Globalfoundries Singapore Pte. Ltd. Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
JP7005452B2 (ja) * 2018-07-30 2022-01-21 株式会社東芝 磁気記憶装置
US10636962B2 (en) 2018-08-21 2020-04-28 Qualcomm Incorporated Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
US11195991B2 (en) 2018-09-27 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory assisted devices and methods of making
EP3671874B1 (en) 2018-12-21 2022-06-22 IMEC vzw Zero-field switching for sot technology
CN110061127B (zh) * 2019-05-20 2023-08-08 中国科学院微电子研究所 磁隧道结的形成方法及磁阻式随机存储器
CN112310274A (zh) * 2019-07-31 2021-02-02 中电海康集团有限公司 自旋轨道矩磁性存储单元及其制备方法
US11069390B2 (en) * 2019-09-06 2021-07-20 Wisconsin Alumni Research Foundation Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
CN114730832B (zh) * 2020-08-27 2026-01-30 桑迪士克科技股份有限公司 多铁辅助电压控制磁各向异性存储器设备及其制造方法
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US12093812B2 (en) 2020-10-02 2024-09-17 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
US11729996B2 (en) 2021-07-30 2023-08-15 International Business Machines Corporation High retention eMRAM using VCMA-assisted writing
JP2023074096A (ja) * 2021-11-17 2023-05-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
US12471497B2 (en) 2022-01-25 2025-11-11 International Business Machines Corporation Magnetic tunnel junction device with magnetoelectric assist
US20230298646A1 (en) * 2022-03-21 2023-09-21 International Business Machines Corporation Deterministic voltage-controlled magnetic anisotropy (vcma) mram with spin-transfer torque (stt) mram assistance
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器

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US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US20060202244A1 (en) * 2005-03-09 2006-09-14 Kochan Ju Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
US20080247072A1 (en) * 2007-03-29 2008-10-09 Commissariat A L'energie Atomique Magnetic tunnel junction magnetic memory
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US20130114334A1 (en) * 2011-11-03 2013-05-09 Ge Yi Magnetoresistive random access memory cell with independently operating read and write components
WO2014022304A1 (en) * 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
US20140071732A1 (en) * 2012-09-11 2014-03-13 The Regents Of The University Of California Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads

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US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US20060202244A1 (en) * 2005-03-09 2006-09-14 Kochan Ju Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
US20080247072A1 (en) * 2007-03-29 2008-10-09 Commissariat A L'energie Atomique Magnetic tunnel junction magnetic memory
US20120280339A1 (en) * 2011-02-16 2012-11-08 Avalanche Technology, Inc. PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER
US20130114334A1 (en) * 2011-11-03 2013-05-09 Ge Yi Magnetoresistive random access memory cell with independently operating read and write components
WO2014022304A1 (en) * 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
US20140071732A1 (en) * 2012-09-11 2014-03-13 The Regents Of The University Of California Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads

Also Published As

Publication number Publication date
KR20160142255A (ko) 2016-12-12
US20160358973A1 (en) 2016-12-08
TWI602331B (zh) 2017-10-11
GB201609565D0 (en) 2016-07-13
CN106374035A (zh) 2017-02-01
FR3037185A1 (OSRAM) 2016-12-09
CN106374035B (zh) 2019-11-26
DE102016006651A1 (de) 2016-12-08
GB2539102A (en) 2016-12-07
KR101869149B1 (ko) 2018-06-19
US9620562B2 (en) 2017-04-11
TW201705568A (zh) 2017-02-01
JP2016225633A (ja) 2016-12-28
FR3037185B1 (fr) 2019-10-25

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732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20190627 AND 20190703

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20210601