JP2016225633A - 外部強磁性バイアス膜を用いる電圧制御磁気異方性スイッチング装置 - Google Patents

外部強磁性バイアス膜を用いる電圧制御磁気異方性スイッチング装置 Download PDF

Info

Publication number
JP2016225633A
JP2016225633A JP2016111167A JP2016111167A JP2016225633A JP 2016225633 A JP2016225633 A JP 2016225633A JP 2016111167 A JP2016111167 A JP 2016111167A JP 2016111167 A JP2016111167 A JP 2016111167A JP 2016225633 A JP2016225633 A JP 2016225633A
Authority
JP
Japan
Prior art keywords
layer
ferromagnetic layer
magnet
substrate
ferromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016111167A
Other languages
English (en)
Japanese (ja)
Inventor
エイ ケティーン ジョーダン
Jordan A Katine
エイ ケティーン ジョーダン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HGST Netherlands BV
Original Assignee
HGST Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HGST Netherlands BV filed Critical HGST Netherlands BV
Publication of JP2016225633A publication Critical patent/JP2016225633A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2016111167A 2015-06-02 2016-06-02 外部強磁性バイアス膜を用いる電圧制御磁気異方性スイッチング装置 Pending JP2016225633A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/728,788 2015-06-02
US14/728,788 US9620562B2 (en) 2015-06-02 2015-06-02 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

Publications (1)

Publication Number Publication Date
JP2016225633A true JP2016225633A (ja) 2016-12-28

Family

ID=56410819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016111167A Pending JP2016225633A (ja) 2015-06-02 2016-06-02 外部強磁性バイアス膜を用いる電圧制御磁気異方性スイッチング装置

Country Status (8)

Country Link
US (1) US9620562B2 (OSRAM)
JP (1) JP2016225633A (OSRAM)
KR (1) KR101869149B1 (OSRAM)
CN (1) CN106374035B (OSRAM)
DE (1) DE102016006651A1 (OSRAM)
FR (1) FR3037185B1 (OSRAM)
GB (1) GB2539102B (OSRAM)
TW (1) TWI602331B (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子
JP2020021782A (ja) * 2018-07-30 2020-02-06 株式会社東芝 磁気記憶装置
WO2023090132A1 (ja) * 2021-11-17 2023-05-25 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103317B2 (en) 2015-01-05 2018-10-16 Inston, Inc. Systems and methods for implementing efficient magnetoelectric junctions
US10217798B2 (en) 2015-01-13 2019-02-26 Inston, Inc. Systems and methods for implementing select devices constructed from 2D materials
US9978931B2 (en) 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US20170033281A1 (en) * 2015-07-29 2017-02-02 Inston Inc. Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components
US10102893B2 (en) 2016-06-28 2018-10-16 Inston Inc. Systems for implementing word line pulse techniques in magnetoelectric junctions
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
WO2019006037A1 (en) 2017-06-27 2019-01-03 Inston, Inc. REDUCTION OF WRITE ERROR RATE IN MAGNETOELECTRIC RAM
JP2019057601A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 磁気記憶装置
US10593866B2 (en) * 2018-06-27 2020-03-17 Globalfoundries Singapore Pte. Ltd. Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
US10636962B2 (en) 2018-08-21 2020-04-28 Qualcomm Incorporated Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
US11195991B2 (en) 2018-09-27 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory assisted devices and methods of making
EP3671874B1 (en) 2018-12-21 2022-06-22 IMEC vzw Zero-field switching for sot technology
CN110061127B (zh) * 2019-05-20 2023-08-08 中国科学院微电子研究所 磁隧道结的形成方法及磁阻式随机存储器
CN112310274A (zh) * 2019-07-31 2021-02-02 中电海康集团有限公司 自旋轨道矩磁性存储单元及其制备方法
US11069390B2 (en) * 2019-09-06 2021-07-20 Wisconsin Alumni Research Foundation Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
CN114730832B (zh) * 2020-08-27 2026-01-30 桑迪士克科技股份有限公司 多铁辅助电压控制磁各向异性存储器设备及其制造方法
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US12093812B2 (en) 2020-10-02 2024-09-17 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
US11729996B2 (en) 2021-07-30 2023-08-15 International Business Machines Corporation High retention eMRAM using VCMA-assisted writing
US12471497B2 (en) 2022-01-25 2025-11-11 International Business Machines Corporation Magnetic tunnel junction device with magnetoelectric assist
US20230298646A1 (en) * 2022-03-21 2023-09-21 International Business Machines Corporation Deterministic voltage-controlled magnetic anisotropy (vcma) mram with spin-transfer torque (stt) mram assistance

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179524A (ja) * 2004-12-20 2006-07-06 Toshiba Corp 磁気記録素子、磁気記録装置、および情報の記録方法
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
JP2008135432A (ja) * 2006-11-27 2008-06-12 Tdk Corp トンネル磁気抵抗効果素子及びその製造方法
JP2008171882A (ja) * 2007-01-09 2008-07-24 Sony Corp 記憶素子及びメモリ
JP2008198900A (ja) * 2007-02-15 2008-08-28 Toshiba Corp 磁気記憶素子及び磁気記憶装置
JP2009245500A (ja) * 2008-03-31 2009-10-22 Tdk Corp 磁気記憶装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729410A (en) 1996-11-27 1998-03-17 International Business Machines Corporation Magnetic tunnel junction device with longitudinal biasing
US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US6114719A (en) 1998-05-29 2000-09-05 International Business Machines Corporation Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
US8755222B2 (en) * 2003-08-19 2014-06-17 New York University Bipolar spin-transfer switching
US7285836B2 (en) * 2005-03-09 2007-10-23 Maglabs, Inc. Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
US7777261B2 (en) 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
FR2914482B1 (fr) * 2007-03-29 2009-05-29 Commissariat Energie Atomique Memoire magnetique a jonction tunnel magnetique
EP2015307B8 (en) * 2007-07-13 2013-05-15 Hitachi Ltd. Magnetoresistive device
US8039913B2 (en) * 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US9728240B2 (en) 2009-04-08 2017-08-08 Avalanche Technology, Inc. Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)
US9196332B2 (en) * 2011-02-16 2015-11-24 Avalanche Technology, Inc. Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
WO2012159078A2 (en) * 2011-05-19 2012-11-22 The Regents Of The University Of California Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram)
US9293694B2 (en) * 2011-11-03 2016-03-22 Ge Yi Magnetoresistive random access memory cell with independently operating read and write components
WO2014022304A1 (en) 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
KR101649978B1 (ko) 2012-08-06 2016-08-22 코넬 유니버시티 자기 나노구조체들의 스핀 홀 토크 효과들에 기초한 전기적 게이트 3-단자 회로들 및 디바이스들
US8988923B2 (en) 2012-09-11 2015-03-24 The Regents Of The University Of California Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads
US9036407B2 (en) 2012-12-07 2015-05-19 The Regents Of The University Of California Voltage-controlled magnetic memory element with canted magnetization

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179524A (ja) * 2004-12-20 2006-07-06 Toshiba Corp 磁気記録素子、磁気記録装置、および情報の記録方法
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
JP2008135432A (ja) * 2006-11-27 2008-06-12 Tdk Corp トンネル磁気抵抗効果素子及びその製造方法
JP2008171882A (ja) * 2007-01-09 2008-07-24 Sony Corp 記憶素子及びメモリ
JP2008198900A (ja) * 2007-02-15 2008-08-28 Toshiba Corp 磁気記憶素子及び磁気記憶装置
JP2009245500A (ja) * 2008-03-31 2009-10-22 Tdk Corp 磁気記憶装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子
JPWO2018198713A1 (ja) * 2017-04-28 2019-11-07 国立研究開発法人産業技術総合研究所 磁気素子
US10998490B2 (en) 2017-04-28 2021-05-04 National Institute Of Advanced Industrial Science And Technology Magnetic element
JP2020021782A (ja) * 2018-07-30 2020-02-06 株式会社東芝 磁気記憶装置
JP7005452B2 (ja) 2018-07-30 2022-01-21 株式会社東芝 磁気記憶装置
WO2023090132A1 (ja) * 2021-11-17 2023-05-25 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器

Also Published As

Publication number Publication date
KR20160142255A (ko) 2016-12-12
US20160358973A1 (en) 2016-12-08
TWI602331B (zh) 2017-10-11
GB201609565D0 (en) 2016-07-13
CN106374035A (zh) 2017-02-01
FR3037185A1 (OSRAM) 2016-12-09
GB2539102B (en) 2019-09-11
CN106374035B (zh) 2019-11-26
DE102016006651A1 (de) 2016-12-08
GB2539102A (en) 2016-12-07
KR101869149B1 (ko) 2018-06-19
US9620562B2 (en) 2017-04-11
TW201705568A (zh) 2017-02-01
FR3037185B1 (fr) 2019-10-25

Similar Documents

Publication Publication Date Title
KR101869149B1 (ko) 외부 강자성 바이어싱 필름을 사용하는 전압 제어 자기 이방성 전환 디바이스
KR102353406B1 (ko) 스핀 궤도 토크를 이용하여 강화된 감쇠 프로그램 및 경사진 자화 용이축을 갖는 자기 접합부를 포함하는 자기 소자
KR102099192B1 (ko) 스핀 홀 mtj 디바이스들을 갖는 교차점 어레이 mram
RU2595588C2 (ru) Магнитный записывающий элемент
US8514615B2 (en) Structures and methods for a field-reset spin-torque MRAM
US7965543B2 (en) Method for reducing current density in a magnetoelectronic device
US8228715B2 (en) Structures and methods for a field-reset spin-torque MRAM
US20220149269A1 (en) Spintronics element and magnetic memory device
US11521776B2 (en) Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
JP2017112359A (ja) 積層体内セレクタを有する上部固定ｓｏｔ−ｍｒａｍアーキテクチャ
US10783943B2 (en) MRAM having novel self-referenced read method
EP2656346B1 (en) Memory array having local source lines
US10461242B2 (en) Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications
US20200051724A1 (en) Low stray field magnetic memory
US10902987B2 (en) Spin-orbit torque type magnetization rotation element, spin-orbit torque magnetoresistance effect element, and method of manufacturing spin-orbit torque type magnetization rotation element
CN110383462A (zh) 磁存储器和磁存储器记录方法
EP1653475A1 (en) Multi-bit magnetic random access memory device and method for writing the same
US20130033927A1 (en) Magentic resistance memory apparatus having multi levels and method of driving the same
US9852782B2 (en) Tilted synthetic antiferromagnet polarizer/reference layer for STT-MRAM bits
KR20250103180A (ko) 자기 메모리 소자 및 이를 포함하는 전자 장치
KR20240143574A (ko) 외부 자기장 없이 자화 반전이 가능한 자기터널접합 소자 및 자기터널접합 소자를 포함하는 메모리 장치

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170418

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170718

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170810

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170825

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180219

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180703