GB2477187A - An image sensor. - Google Patents

An image sensor. Download PDF

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Publication number
GB2477187A
GB2477187A GB1022024A GB201022024A GB2477187A GB 2477187 A GB2477187 A GB 2477187A GB 1022024 A GB1022024 A GB 1022024A GB 201022024 A GB201022024 A GB 201022024A GB 2477187 A GB2477187 A GB 2477187A
Authority
GB
United Kingdom
Prior art keywords
transfer
image
signal charges
ccd
doped region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1022024A
Other languages
English (en)
Other versions
GB201022024D0 (en
Inventor
Takeharu Etoh
Konoe Etoh
Toshiaki Akino
Masatoshi Kureta
Masatoshi Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Atomic Energy Agency
Kindai University
Original Assignee
Japan Atomic Energy Agency
Kindai University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Atomic Energy Agency, Kindai University filed Critical Japan Atomic Energy Agency
Publication of GB201022024D0 publication Critical patent/GB201022024D0/en
Publication of GB2477187A publication Critical patent/GB2477187A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H01L27/14831—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H04N5/369—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
GB1022024A 2009-12-25 2010-12-23 An image sensor. Withdrawn GB2477187A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009294755 2009-12-25

Publications (2)

Publication Number Publication Date
GB201022024D0 GB201022024D0 (en) 2011-02-02
GB2477187A true GB2477187A (en) 2011-07-27

Family

ID=43599045

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1022024A Withdrawn GB2477187A (en) 2009-12-25 2010-12-23 An image sensor.

Country Status (4)

Country Link
US (1) US8576319B2 (enExample)
JP (1) JP5105453B2 (enExample)
CN (1) CN102143330A (enExample)
GB (1) GB2477187A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127772A1 (ja) * 2011-03-24 2012-09-27 パナソニック株式会社 固体撮像素子および当該素子を備える撮像装置
JP6188679B2 (ja) * 2012-02-29 2017-08-30 江藤　剛治 固体撮像装置
CN103594480A (zh) * 2013-12-02 2014-02-19 中国电子科技集团公司第四十四研究所 具备信号电荷选择功能的ccd像元结构
DE102014013099B4 (de) 2014-09-03 2019-11-14 Basler Aktiengesellschaft Verfahren und Vorrichtung zur vereinfachten Erfassung eines Tiefenbildes
US9979905B2 (en) 2015-11-17 2018-05-22 Microsoft Technology Licensing, Llc. Multimode photosensor
CN113038121B (zh) * 2021-03-09 2022-08-16 湘潭大学 中子辐照后电荷耦合器件暗信号的原位测量系统及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0315778A2 (en) * 1987-10-09 1989-05-17 Kabushiki Kaisha Toshiba Solid state image pickup apparatus
JPH08186242A (ja) * 1994-12-28 1996-07-16 Sony Corp 固体撮像素子および撮像装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028265A (ja) * 1983-07-27 1985-02-13 Canon Inc 電荷転送デバイス
JPS60163464A (ja) * 1984-02-02 1985-08-26 Fujitsu Ltd 電荷結合装置
JPS60202962A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 電荷結合装置
JPS6354879A (ja) * 1986-08-25 1988-03-09 Omron Tateisi Electronics Co 静止画撮像カメラ
JP2504845B2 (ja) * 1989-10-06 1996-06-05 シャープ株式会社 固体撮像装置
DE69320839T2 (de) * 1992-01-31 1999-03-04 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zur Ladungsübertragung, Ladungsübertragungsvorrichtung und Festkörperbildaufnahmevorrichtung zur Anwendung derselben
JPH09270504A (ja) * 1996-03-29 1997-10-14 Toshiba Microelectron Corp 固体撮像装置
JPH10243284A (ja) * 1997-02-25 1998-09-11 Toshiba Microelectron Corp 固体撮像装置並びにこれを用いた自動焦点調整装置及び撮像システム
JP3710656B2 (ja) * 1999-09-07 2005-10-26 東芝マイクロエレクトロニクス株式会社 固体撮像装置および距離測定装置
JP3704052B2 (ja) 2000-03-28 2005-10-05 リンク・リサーチ株式会社 高速撮像素子及び高速撮影装置
JP2002252338A (ja) * 2000-12-18 2002-09-06 Canon Inc 撮像装置及び撮像システム
US7190400B2 (en) * 2001-06-04 2007-03-13 Texas Instruments Incorporated Charge multiplier with logarithmic dynamic range compression implemented in charge domain
JP4390096B2 (ja) * 2001-07-06 2009-12-24 富士フイルム株式会社 内視鏡装置
US7432971B2 (en) * 2002-06-21 2008-10-07 Shimadzu Corporation In-situ storage image sensor and in-situ storage image pickup apparatus
JP4265295B2 (ja) * 2002-06-21 2009-05-20 株式会社島津製作所 撮像素子および撮像装置
JP2004103785A (ja) * 2002-09-09 2004-04-02 Fuji Film Microdevices Co Ltd 固体撮像素子
JP2006121650A (ja) * 2004-09-24 2006-05-11 Fuji Photo Film Co Ltd 固体撮像装置
JP4542962B2 (ja) * 2005-07-21 2010-09-15 富士フイルム株式会社 デジタルカメラ
JP4634953B2 (ja) * 2006-03-30 2011-02-16 富士フイルム株式会社 固体撮像装置および駆動方法
US7855742B2 (en) * 2006-03-30 2010-12-21 Fujifilm Corporation Solid state imaging device with horizontal transfer paths and a driving method therefor
JP2009065478A (ja) * 2007-09-06 2009-03-26 Fujifilm Corp 固体撮像素子の駆動方法及び撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0315778A2 (en) * 1987-10-09 1989-05-17 Kabushiki Kaisha Toshiba Solid state image pickup apparatus
JPH08186242A (ja) * 1994-12-28 1996-07-16 Sony Corp 固体撮像素子および撮像装置

Also Published As

Publication number Publication date
CN102143330A (zh) 2011-08-03
US20110157448A1 (en) 2011-06-30
US8576319B2 (en) 2013-11-05
JP5105453B2 (ja) 2012-12-26
JP2011151797A (ja) 2011-08-04
GB201022024D0 (en) 2011-02-02

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)