JP6643346B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP6643346B2 JP6643346B2 JP2017542674A JP2017542674A JP6643346B2 JP 6643346 B2 JP6643346 B2 JP 6643346B2 JP 2017542674 A JP2017542674 A JP 2017542674A JP 2017542674 A JP2017542674 A JP 2017542674A JP 6643346 B2 JP6643346 B2 JP 6643346B2
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- 238000003384 imaging method Methods 0.000 title claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 101150071434 BAR1 gene Proteins 0.000 description 2
- 101100378536 Ovis aries ADRB1 gene Proteins 0.000 description 2
- 101100004179 Schizophyllum commune BAR2 gene Proteins 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000004397 blinking Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C3/00—Measuring distances in line of sight; Optical rangefinders
- G01C3/02—Details
- G01C3/06—Use of electric means to obtain final indication
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
L=c×(Δt/2) …(1)
が成り立つ。受信光は、時刻t11から時間Δtだけ経過した時刻t12に立ち上がり、時刻t13から時間Δtだけ経過した時刻t14に立ち下がる。したがって、第1及び第2のフォトダイオードPD1,PD2は、時刻t12から時刻t14までの間だけ光電変換により電荷を生成する。
Δt/Tp=S2/(S1+S2) …(2)
の関係が成立する。式(1)、(2)から、
L=(c×Tp)/2 × S2/(S1+S2) …(3)
が成り立つ。つまり、第1及び第2のメモリ部MEM1,MEM2に振り分けられた電荷の量S1,S2をもとに、対象物までの距離Lを求めることができる。
9 半導体基板
10 素子分離部
11 ポリシリコン層
12 メタル配線層
13 レンズ
14 遮光膜
20 撮像領域
100,200,300 画素
FD1,FD2 フローティングディフュージョン部
MEM1,MEM2 メモリ部
OFD オーバーフロードレイン
PD1,PD2 フォトダイオード
PW pウェル
RG1,RG2 (フォトダイオードからメモリ部への)読み出しゲート
RS リセットトランジスタ
SF ソースフォロワ(増幅トランジスタ)
SIG 信号線
TG1,TG2 (メモリ部からフローティングディフュージョン部への)転送ゲート
VDD,VDDC 電源
Claims (8)
- 半導体基板上に二次元配置された複数の画素を備えた固体撮像装置であって、
前記複数の画素の各々は、
各々光電変換により電荷を生成する2つのフォトダイオードと、
各々断面にて前記2つのフォトダイオードに挟まれた領域に互いに離して形成された第1及び第2のメモリ部と、
前記2つのフォトダイオードから前記第1のメモリ部へ電荷を読み出すための第1の読み出しゲートと、
前記2つのフォトダイオードから前記第2のメモリ部へ電荷を読み出すための第2の読み出しゲートとを有することを特徴とする固体撮像装置。 - 請求項1記載の固体撮像装置において、
前記複数の画素は、前記半導体基板上にて千鳥状に配置されたことを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記第1の読み出しゲートは、前記2つのフォトダイオードと前記第1のメモリ部とに跨がるように形成され、かつ、
前記第2の読み出しゲートは、前記2つのフォトダイオードと前記第2のメモリ部とに跨がるように形成されたことを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記複数の画素の各々は、
前記第1及び第2のメモリ部に隣接してそれぞれ形成された第1及び第2のフローティングディフュージョン部と、
前記第1のメモリ部から前記第1のフローティングディフュージョン部へ電荷を転送するための第1の転送ゲートと、
前記第2のメモリ部から前記第2のフローティングディフュージョン部へ電荷を転送するための第2の転送ゲートと、
前記第1及び第2のフローティングディフュージョン部に共通に接続された増幅トランジスタとを更に有することを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記2つのフォトダイオードは、前記第1及び第2のメモリ部の下部に延伸して配置されていることを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記2つのフォトダイオードは、前記第1及び第2のメモリ部の下部を通じて互いに接続されていることを特徴とする固体撮像装置。 - 請求項2記載の固体撮像装置において、
前記複数の画素の各々は、
前記第1及び第2のメモリ部に隣接してそれぞれ形成された第1及び第2のフローティングディフュージョン部と、
前記第1のメモリ部から前記第1のフローティングディフュージョン部へ電荷を転送するための第1の転送ゲートと、
前記第2のメモリ部から前記第2のフローティングディフュージョン部へ電荷を転送するための第2の転送ゲートとを更に有し、
千鳥状に配置された前記複数の画素のうち互いに隣接する2つの画素の各々の前記第1又は第2のフローティングディフュージョン部に共通に接続された増幅トランジスタを更に備えたことを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記複数の画素の各々は、
前記2つのフォトダイオードのうちの一方から前記第2のメモリ部への電荷の読み出しを妨げるようにポテンシャルバリアとして形成された第1のバリア部と、
前記2つのフォトダイオードのうちの他方から前記第1のメモリ部への電荷の読み出しを妨げるようにポテンシャルバリアとして形成された第2のバリア部とを更に有することを特徴とする固体撮像装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015190803 | 2015-09-29 | ||
JP2015190803 | 2015-09-29 | ||
PCT/JP2016/001812 WO2017056346A1 (ja) | 2015-09-29 | 2016-03-29 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017056346A1 JPWO2017056346A1 (ja) | 2018-07-12 |
JP6643346B2 true JP6643346B2 (ja) | 2020-02-12 |
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Family Applications (1)
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JP2017542674A Active JP6643346B2 (ja) | 2015-09-29 | 2016-03-29 | 固体撮像装置 |
Country Status (4)
Country | Link |
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US (1) | US11011557B2 (ja) |
EP (1) | EP3343620A4 (ja) |
JP (1) | JP6643346B2 (ja) |
WO (1) | WO2017056346A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102016208347B4 (de) * | 2016-05-13 | 2017-12-21 | Infineon Technologies Ag | Optische Sensorvorrichtung und Verfahren zum Betreiben eines Laufzeitsensors |
KR102615195B1 (ko) * | 2018-07-19 | 2023-12-18 | 삼성전자주식회사 | ToF 기반의 3D 이미지 센서 및 그 이미지 센서를 구비한 전자 장치 |
EP3973272A1 (en) * | 2019-06-28 | 2022-03-30 | Quantum-Si Incorporated | Optical and electrical secondary path rejection |
JP7433863B2 (ja) * | 2019-11-27 | 2024-02-20 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5110535B2 (ja) * | 2006-03-31 | 2012-12-26 | 国立大学法人静岡大学 | 半導体測距素子及び固体撮像装置 |
JP5395323B2 (ja) | 2006-09-29 | 2014-01-22 | ブレインビジョン株式会社 | 固体撮像素子 |
JP4710017B2 (ja) * | 2006-10-20 | 2011-06-29 | 国立大学法人静岡大学 | Cmosイメージセンサ |
EP2180513A1 (en) * | 2008-10-27 | 2010-04-28 | Stmicroelectronics SA | Near infrared/color image sensor |
JP5558999B2 (ja) * | 2009-11-24 | 2014-07-23 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
US9076706B2 (en) * | 2011-01-07 | 2015-07-07 | Samsung Electronics Co., Ltd. | Image sensor based on depth pixel structure |
JP5635937B2 (ja) * | 2011-03-31 | 2014-12-03 | 本田技研工業株式会社 | 固体撮像装置 |
JP2013084851A (ja) * | 2011-10-12 | 2013-05-09 | Mitsubishi Electric Corp | 光電変換回路 |
JP2013172210A (ja) * | 2012-02-17 | 2013-09-02 | Canon Inc | 撮像装置 |
JP6151892B2 (ja) * | 2012-08-02 | 2017-06-21 | キヤノン株式会社 | 固体撮像素子および撮像装置 |
KR102007277B1 (ko) * | 2013-03-11 | 2019-08-05 | 삼성전자주식회사 | 3차원 이미지 센서의 거리 픽셀 및 이를 포함하는 3차원 이미지 센서 |
TWI623232B (zh) * | 2013-07-05 | 2018-05-01 | Sony Corp | 固體攝像裝置及其驅動方法以及包含固體攝像裝置之電子機器 |
-
2016
- 2016-03-29 WO PCT/JP2016/001812 patent/WO2017056346A1/ja active Application Filing
- 2016-03-29 EP EP16850533.7A patent/EP3343620A4/en not_active Withdrawn
- 2016-03-29 JP JP2017542674A patent/JP6643346B2/ja active Active
-
2018
- 2018-03-29 US US15/940,658 patent/US11011557B2/en active Active
Also Published As
Publication number | Publication date |
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EP3343620A1 (en) | 2018-07-04 |
WO2017056346A1 (ja) | 2017-04-06 |
US20180226439A1 (en) | 2018-08-09 |
EP3343620A4 (en) | 2018-08-08 |
JPWO2017056346A1 (ja) | 2018-07-12 |
US11011557B2 (en) | 2021-05-18 |
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